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One of the most widely used active materials for phase-change memories (PCM), the ternary stoichiometric compound Ge$_2$Sb$_2$Te$_5$ (GST), has a low crystallization temperature of around 150$^\circ$C. One solution to achieve higher operating temperatures is to enrich GST with additional germanium (GGST). This alloy crystallizes into a polycrystalline mixture of two phases, GST and almost pure germanium. In a previous work [R. Bayle et al., J. Appl. Phys. 128, 185101 (2020)], this crystallization process was studied using a multi-phase field model (MPFM) with a simplified thermal field calculated by a separate solver. Here, we combine the MPFM and a phase-aware electro-thermal solver to achieve a consistent multi-physics model for device operations in PCM. Simulations of memory operations are performed to demonstrate its ability to reproduce experimental observations and the most important calibration curves that are used to assess the performance of a PCM cell., Comment: 20 pages, 27 figures, submitted to Journal of Applied Physics

A self-consistent model for the simulation of Ge-rich Ge$_2$Sb$_2$Te$_5$ phase change memories is presented. Combining the multi-phase field model and a phase-aware electro-thermal solver, it reproduces the multi-physics behavior of the material. Simulations of memory operations are performed to demonstrate its ability to reproduce experimental observations., Comment: 4 pages, 9 figures, accepted for the SISPAD 2023 conference proceedings

We investigate the existence of linear-in-momentum spin-orbit interactions in the valence band of Ge/GeSi heterostructures using an atomistic tight-binding method. We show that symmetry breaking at the Ge/GeSi interfaces gives rise to a linear Dresselhaus-type interaction for heavy-holes. This interaction results from the heavy-hole/light-hole mixings induced by the interfaces and can be captured by a suitable correction to the minimal Luttinger-Kohn, four bands $\vec{k}\cdot\vec{p}$ Hamiltonian. It is dependent on the steepness of the Ge/GeSi interfaces, and is suppressed if interdiffusion is strong enough. Besides the Dresselhaus interaction, the Ge/GeSi interfaces also make a contribution to the in-plane gyromagnetic $g$-factors of the holes. The tight-binding calculations also highlight the existence of a small linear Rashba interaction resulting from the couplings between the heavy-hole/light-hole manifold and the conduction band enabled by the low structural symmetry of Ge/GeSi heterostructures. These interactions can be leveraged to drive the hole spin. The linear Dresselhaus interaction may, in particular, dominate the physics of the devices for out-of-plane magnetic fields. When the magnetic field lies in-plane, it is, however, usually far less efficient than the $g$-tensor modulation mechanisms arising from the motion of the dot in non-separable, inhomogeneous electric fields and strains., Comment: 19 pages, 16 figs

Thermal conductivity is a fundamental material property that plays an essential role in technology, but its accurate evaluation presents a challenge for theory. In this work, we demonstrate the application of $E(3)$-equivariant neutral network interatomic potentials within Green-Kubo formalism to determine the lattice thermal conductivity in amorphous and crystalline materials. We apply this method to study the thermal conductivity of germanium telluride (GeTe) as a prototypical phase change material. A single deep learning interatomic potential is able to describe the phase transitions between the amorphous, rhombohedral and cubic phases, with critical temperatures in good agreement with experiments. Furthermore, this approach accurately captures the pronounced anharmonicity that is present in GeTe, enabling precise calculations of the thermal conductivity. In contrast, the Boltzmann transport equation including only three-phonon processes tends to overestimate the thermal conductivity by approximately a factor of 2 in the crystalline phases.

In X-ray photoelectron spectroscopy (XPS), the injected hole interacts with the electronic polarization cloud induced by the hole itself, ultimately resulting in a lower binding energy. Such polarization effect can shift the core-level energy by more than 1 eV, as shown here by embedded many-body perturbation theory for the paradigmatic case of noble gas clusters made of Ar, Kr, or Xe. The polarization energy is almost identical for the different core-orbitals of a given atom, but it strongly depends on the position of the ionized atom in the cluster. An analytical formula is derived from classical continuum electrostatics, providing an effective and accurate description of polarization effects, which permits to achieve an excellent agreement with available experiments on noble gas clusters at a modest computational cost. Electronic polarization provides a crucial contribution to core levels absolute energies and chemical shifts., Comment: 6 pages, 3 figures

X-ray photoemission spectroscopy (XPS) provides direct information on the atomic composition and stoichiometry by measuring core electron binding energies. Moreover, according to the shift of the binding energy, so-called chemical shift, the precise chemical type of bonds can be inferred, which brings additional information on the local structure. In this work, we present a theoretical study of the chemical shift firstly by comparing different theories, from Hartree-Fock (HF) and density-functional theory (DFT) to many-body perturbation theory (MBPT) approaches like the GW approximation and its static version (COHSEX). The accuracy of each theory is assessed by benchmarking against the experiment on the chemical shift of the carbon 1s electron in a set of molecules. More importantly, by decomposing the chemical shift into different contributions according to terms in the total Hamiltonian, the physical origin of the chemical shift is identified as classical electrostatics., Comment: 8 pages, 5 figures 1 table

X-ray photoelectron spectroscopy (XPS) measures electron removal energies, providing direct access to core and valence electron binding energies, hence probing the electronic structure. In this work, we benchmark for the first time the ab initio many-body GW approximation on the complete electron binding energies of noble gas atoms (He-Rn), which spans 100~keV. Our results demonstrate that GW achieves an accuracy within 1.2% in XPS binding energies, by systematically restoring the underestimation from density-functional theory (DFT, error of 14%) or the overestimation from Hartree-Fock (HF, error of 4.7%). Such results also imply the correlations of $d$ electrons are very well described by GW., Comment: 7 pages, 3 figures, 5 tables

In the last decade, several works have focused on exploring the material and electrical properties of $\text{GeTe/Sb}_{2}\text{Te}_{3}$ superlattices (SLs) in particular because of some first device implementations demonstrating interesting performances such as fast switching speed, low energy consumption, and non-volatility. However, the switching mechanism in such SL-based devices remains under debate. In this work, we investigate the prototype $\text{GeTe/Sb}_{2}\text{Te}_{3}$ SLs, to analyze fundamentally their electronic and thermal properties by ab initio methods. We find that the resistive contrast is small among the different phases of $\text{GeTe/Sb}_{2}\text{Te}_{3}$ because of a small electronic gap (about 0.1 eV) and a consequent semi-metallic-like behavior. At the same time the out-of-plane lattice thermal conductivity is rather small, while varying up to four times among the different phases, from 0.11 to 0.45 W/m$^{-1}$K$^{-1}$, intimately related to the number of Van der Waals (VdW) gaps in a unit block. Such findings confirm the importance of the thermal improvement achievable in $\text{GeTe/Sb}_{2}\text{Te}_{3}$ super-lattices devices, highlighting the impact of the material stacking and the role of VdW gaps on the thermal engineering of the Phase-Change Memory cell., Comment: 5 pages, 3 figures

The conductance of bulk metal--insulator--metal junctions is evaluated by the Landauer formula using an \textit{ab initio} electronic structure calculated using a plane-waves basis set within density-functional theory (DFT) and beyond, i.e.\ including exact non-local exchange using hybrid functional (HSE) or many-body $G_0W_0$ and COHSEX quasiparticle (QP) schemes. We consider an Ag/MgO/Ag heterostructure model and we focus on the evolution of the zero-bias conductance as a function of the MgO film thickness. Our study shows that the correction of the electronic structure beyond semi-local density functionals goes in the right direction to improve the agreement with experiments, significantly reducing the zero-bias conductance. This effect becomes more evident at larger MgO thickness, that is in increasing tunneling regime. We also observe that the reduction of the conductance seems more related to the correction of wavefunctions rather than energies, and thus not directly related to the correction of the band-gap of bulk MgO. $G_0W_0$ and HSE both provide a correct band-gap in agreement with experiments, but only HSE gives a significant reduction of the conductance. COHSEX, while overestimating the band-gap, gives a reduction of the conductance very close to HSE., Comment: 11 pages, 12 figures

We present first-principles many-body perturbation theory calculations of the quasiparticle electronic structure and of the optical response of HfO$_2$ polymorphs. We use the $GW$ approximation including core electrons by the projector augmented wave (PAW) method and performing a quasiparticle self-consistency also on wavefunctions (QS$GW$). In addition, we solve the Bethe-Salpeter equation on top of $GW$ to calculate optical properties including excitonic effects. For monoclinic HfO$_2$ we find a fundamental band gap of $E_g = 6.33$ eV (with the direct band gap at $E_g^d = 6.41$ eV), and an exciton binding energy of 0.57 eV, which situates the optical gap at $E^o_g = 5.85$ eV. The latter is in the range of spectroscopic ellipsometry (SE) experimental estimates (5.5-6 eV), whereas our electronic band gap is well beyond experimental photoemission (PE) estimates ($< 6$ eV) and previous $GW$ works. Our calculated density of states and optical absorption spectra compare well to raw PE and SE spectra. This suggests that our predictions of both optical and electronic gaps are close to, or at least lower bounds of, the real values., Comment: 7 pages, 8 figures, 4 tables

We experimentally study the coupling of Group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts which are linear in strain, in contrast to the quadratic dependence predicted by the valley repopulation model (VRM), and therefore orders of magnitude greater than that predicted by the VRM for small strains $|\varepsilon| < 10^{-5}$. Through both tight-binding and first principles calculations we find that these shifts arise from a linear tuning of the donor hyperfine interaction term by the hydrostatic component of strain and achieve semi-quantitative agreement with the experimental values. Our results provide a framework for making quantitative predictions of donor spins in silicon nanostructures, such as those being used to develop silicon-based quantum processors and memories. The strong spin-strain coupling we measure (up to 150~GHz per strain, for Bi-donors in Si), offers a method for donor spin tuning --- shifting Bi donor electron spins by over a linewidth with a hydrostatic strain of order $10^{-6}$ --- as well as opportunities for coupling to mechanical resonators.