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In focus of this report are the mechanisms of formation, propagation, and interaction of growth defects in heteroepitaxial diamond films along with their impact on the optical emission properties of N- and Si-vacancy (NV and SiV) color centers. Here, we analyze and discuss the properties of incoherent grain boundaries (IGBs) and extended defects in a nitrogen- and boron-doped heterodiamond nucleated and grown on Ir(001) via bias-enhanced nucleation and chemical vapor deposition techniques. We show that the low-angle IGBs alter the structural and optical emission properties of NV and SiV complexes by subduing NV emission and supporting the formation of interstitial Si-vacancy complexes dominating in the faulted IGB regions. We also demonstrate that the IGB-confined threading dislocations are responsible for the vertical transport and incorporation of Si impurities in thick layers, leading to an enhanced SiV emission from the IGBs. [ABSTRACT FROM AUTHOR]

ZrS2 is transition metal dichalcogenides (TMDCs) which is believed one of the most talented applicants to fabricate photovoltaics. Therefore, we present here for the first-time numerical simulation of novel inorganic ZrS2/CuO heterojunction solar cells employing SCAPS-1D. The influence of the thickness, carrier concentration, and bandgap for both the window and absorber layers on the solar cell fundamental parameters was explored intensely. Our results reveal that the solar cell devices performance is mainly affected by many parameters such as the depletion width (Wd), built-in voltage (Vbi), collection length of charge carrier, the minority carrier lifetime, photogenerated current, and recombination rate. The η of 23.8% was achieved as the highest value for our simulated devices with the Voc value of 0.96 V, the Jsc value of 34.2 mA/cm2, and the FF value of 72.2%. Such efficiency was obtained when the CuO band gap, thickness, and carrier concentration were 1.35 eV, 5.5 µm, and above 1018 cm−3, respectively, and for the ZrS2 were 1.4 eV, 1 µm, and less than 1020 cm−3, respectively. Our simulated results indicate that the inorganic ZrS2/CuO heterojunction solar cells are promising to fabricate low-cost, large-scale, and high-efficiency photovoltaic devices. [ABSTRACT FROM AUTHOR]

Perovskite–silicon tandem solar cells have shown a rapid progress within the past 5 years in terms of their research cell efficiency and are currently being investigated as candidates for the next generation of industrial PV devices. This raises the question of which silicon bottom cell will be most suitable for tandem application. Currently, the silicon heterojunction (SHJ) technology dominates in tandem research achieving world records. However, it is an open issue of how to transfer these research results to industrial mass production, which is driven by cost reduction and resource efficiency and includes challenges like upscaling and long‐term stability. Therefore, it is highly relevant for the PV industry to get reliable and predictive estimates on the efficiency and cost potential, as well as technologically feasible solutions. In this work, we elaborate on silicon bottom cell concepts based on the PERC, TOPCon, and SHJ technology combined with two different interconnection concepts. For each tandem device, the efficiency potential is investigated by means of an experimentally validated simulation model. Second, we evaluate the bottom cell concepts in terms of all‐in cell costs per piece. Bringing the efficiency potential and cost evaluation together allows us to assess the different tandem cell concepts in terms of all‐in module cost per watt peak. Our results show that perovskite–silicon tandem devices are promising candidates to significantly reduce the levelized cost of electricity and, in particular, that the "race" for the best silicon bottom cell is still open to all the investigated bottom cell technologies. [ABSTRACT FROM AUTHOR]

Transparent conductive oxides (TCOs), such as aluminium-doped zinc oxide (ZnO:Al), play an iniportant role in thin-filin photovoltaics. As a material for front contacts, ZnO:Al is standard in industrial-scale production, especially in the field of Cu(In,Ga)Se2 solar cells. Over the last few years, there has been a strong push to use ZnO:A1 films on glass as substrates for amorphous or amorphous/microcrystalline silicon solar cells, and these films have now been introduced as an alternative to the typically used fluorine-doped tin oxide (SnO2:F) films in production. Sputtering coaters for large area deposition of ZnO:Al are widely available, and ZnO:Al films are produced in these coaters by sputtering of ceramic targets. This technology offers high process stability and is therefore favoured over reactive sputtering of metallic targets. With respect to cost and quality, however, the reactive process is an interesting alternative. In this paper we will give an overview of the process of reactive sputtering of ZnO:Al and discuss the most important insights. [ABSTRACT FROM AUTHOR]

Evaporated charge extraction layers from organic molecular materials are vital in perovskite-based solar cells. For opto-electronic device optimization their complex refractive indices must be known for the visible and near infrared wavelength regime; however, accurate determination from thin organic films below 50 nm can be challenging. By combining spectrophotometry, variable angle spectroscopic ellipsometry, and X-ray reflectivity with an algorithm that simultaneously fits all available spectra, the complex refractive index of evaporated Spiro-TTB and C 60 layers is determined with high accuracy. Based on that, an optical losses analysis for perovskite silicon solar cells shows that 15 nm of Spiro-TTB in the front of a n-i-p device reduces current by only 0.1 mA/cm 2 , compared to a substantial loss of 0.5 mA/cm 2 due to 15 nm of C 60 in a p-i-n device. Optical device simulation predicts high optical generation current densities of 19.7 and 20.1 mA/cm 2 for the fully-textured, module-integrated p-i-n and n-i-p devices, respectively.