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Silicon, renowned for its remarkable energy density, has emerged as a focal point in the pursuit of high-energy storage solutions for the next generation. Nevertheless, silicon electrodes are known to undergo significant volume expansion during the insertion of lithium ions, leading to structural deformation and the development of internal stresses, and causing a rapid decline in battery capacity and overall lifespan. To gain deeper insights into the intricacies of charge rate effects, this study employs a combination of in situ measurements and computational modeling to elucidate the cyclic performance of composite silicon electrodes. The findings derived from the established model and curvature measurement system unveil the substantial alterations in stress and deformation as a consequence of varying charge rates. Notably, the active layer experiences compressive forces that diminish as the charge rate decreases. At a charge rate of 0.2, the active layer endures a maximum stress of 89.145 MPa, providing a comprehensive explanation for the observed deterioration in cycling performance at higher charge rates. This study not only establishes a fundamental basis for subsequent stress analyses of silicon electrodes but also lays a solid foundation for further exploration of the impact of charge rates on composite silicon electrodes. [ABSTRACT FROM AUTHOR]

The laser power mediated changes in the Raman line shape have been considered in terms of interference between discrete phonon states ρ and the electronic continuum states ϰ contributed by Urbach tail states. The laser-induced effects are treated in terms of the increase in the surface temperature and thereby the scaling of electronic disorder, i.e., Urbach energy, which can further contribute to the electron–phonon interactions. Therefore, the visualization of this effect is attempted analytically as a perturbation term in the Hamiltonian, which clearly accounts for the observed changes with laser power. This has been investigated based on the experimental results of laser power dependent Raman spectra of bulk EuFeO3 and silicon nanowires, which are found to provide convincing interpretations. [ABSTRACT FROM AUTHOR]

Metal–Organic Polymers (MOPs) have attracted growing attention for lithium-ion battery (LIB) applications due to their merits in orderly ionic transportation and robust structure stability in electrochemical reactions. However, they suffer from poor electronic conductivity. In this work, we apply first-principles density functional theory to explore the potential of three one-dimensional (1D) electrically conductive C6H2S4TM (TM = Fe, Co, and Ni) MOPs with the π–d conjugated coordination as anode materials for Li+ ions storage. Our theoretical results reveal that these 1D MOPs possess a superior theoretical capacity of over 748 mA h g−1. In particular, the 1D C6H2S4Ni MOP shows an exceptional theoretical specific capacity of 1110 mA h g−1 based on the three-electron transferring reaction, which significantly outperforms the traditional graphite-based anode material in LIBs. Moreover, the resonant charge transfer between Ni metal and ligand within the 1D C6H2S4Ni MOP reduces the diffusion energy barrier of the Li atoms when they migrate on the surface of the MOP. The ultrahigh theoretical specific capacity of the C6H2S4Ni MOP predicts that it can be a promising anode material for LIBs. [ABSTRACT FROM AUTHOR]

An analytical device physics model is presented for determining the energy conversion efficiency of semiconductor nanowire array-based radial (core–shell) p-i-n junction betavoltaic cells for two- and three-dimensional radioisotope source geometries. Optimum short-circuit current density J sc , open-circuit voltage V oc , fill factor F F , and energy conversion efficiency η are determined for various nanowire properties, including dopant concentration, nanowire length, core diameter, and shell thickness, for Si, GaAs, and GaP material systems. A maximum efficiency of 8.05 % was obtained for GaP nanowires with diameter 200 nm (p-core diameter, i-shell, and n-shell thicknesses of 24, 29.4, and 58.6 nm, respectively), length 10 μ m , acceptor and donor concentrations of 10 19 and 5 × 10 18 cm − 3 , respectively, and a 3D source geometry. [ABSTRACT FROM AUTHOR]

Hyperdoped silicon is a promising material for near-infrared light detection, but to date, the device efficiency has been limited. To optimize photodetectors based on this material that operate at room temperature, we present a detailed study on the electrical nature of gold-hyperdoped silicon formed via ion implantation and pulsed-laser melting (PLM). After PLM processing, oxygen-rich and gold-rich surface layers were identified and a wet etch process was developed to remove them. Resistivity and Hall effect measurements were performed at various stages of device processing. The underlying gold-hyperdoped silicon was found to be semi-insulating, regardless of whether the surface gold was removed by etching or not. We propose a Fermi level pinning model to describe the band bending of the transformed surface layer and propose a promising device architecture for efficient Au-hyperdoped Si photodetectors. [ABSTRACT FROM AUTHOR]

Roughly, 50% of primary energy worldwide is rejected as waste heat over a wide range of temperatures. Waste heat above 573 K has the highest Carnot potential (> --> 50 %) to be converted to electricity due to higher Carnot efficiency. Thermoelectric (TE) materials have gained significant attention as potential candidates for efficient thermal energy conversion devices. Silicon nanowires (SiNWs) are promising materials for TE devices due to their unique electrical and thermal properties. In this study, we report the successful fabrication of high-quality double-sided SiNW arrays using advanced techniques. We engineered the double-sided structure to increase the surface area and the number of TE junctions, enhancing TE energy conversion efficiency. We also employed non-agglomeration wire tip engineering to ensure uniformity of the SiNWs and designed effective Ohmic contacts to improve overall TE efficiency. Additionally, we post-doped the double-sided SiNW arrays to achieve high electrical conductivity. Our results showed a significant improvement in the TE performance of the SiNW array devices, with a maximum figure-of-merit (ZT) value of 0.24 at 700 K, fabricated from the single SiNW with ZT of 0.71 at 700 K in our previous work [Yang et al., Nat. Commun. 12(1), 3926(2021)]. [ABSTRACT FROM AUTHOR]

Copper (Cu) interconnections have been widely used in advanced electronic packaging due to their outstanding thermal and electric properties. Preparing a smooth and uniform Cu seed thin layer is one of the critical processes to obtain high-reliability Cu interconnections. The barrier layer between Cu and silicon (Si) devices is necessary to prevent the inter-diffusion between Cu and Si. However, little work has been done on the surface roughness analysis of the Cu seed layer deposited on the diffusion barrier layer. In this paper, the influences of deposition thickness, incident energy, barrier layer temperature, and surface morphology on the surface roughness of the Cu seed layer deposited on α-titanium (α-Ti) barrier layer were studied in detail by the molecular dynamics (MD). The simulation results indicated that appropriate parameters have a beneficial effect on reducing the surface roughness, and the surface morphology of the Cu seed layer strongly connects with that of the barrier layer. These results provided a foundation for optimizing the quality of the Cu seed layer. [ABSTRACT FROM AUTHOR]

Based on the transport and polarization relaxation theories, the effects of hydrogen, fluorine, and chlorine atom passivation on the conductivity and dielectric properties of silicon carbide nanowires (SiCNWs) were numerically simulated. The results show that passivation can decrease the dark conductivity of SiCNWs and increase its ultraviolet photoconductivity. Among them, the photoconductivity of univalent (H) passivated SiCNWs is better than that of seven-valent (Cl, F) passivated SiCNWs. In terms of dielectric properties, the passivated SiCNWs exhibit a strong dielectric response in both deep ultraviolet and microwave regions. Hydrogen passivation SiCNWs produce the strongest dielectric response in deep ultraviolet, while fluorine passivation SiCNWs produce the strongest dielectric relaxation in the microwave band, which indicates that atomic passivation SiCNWs have a wide range of applications in ultraviolet optoelectronic devices and microwave absorption and shielding. [ABSTRACT FROM AUTHOR]

It is a formidable challenge to find the minority carrier recombination lifetime in low-dimensional devices as low-dimensionality increases the surface recombination rate and often reduces the recombination lifetime to a scale of picoseconds. In this work, we demonstrated a simple but powerful method to quantitatively probe the minority carrier recombination lifetime in silicon nanowires or microwires by fitting the experimental photoresponses with our recently established analytical photoresponse principle of photoconductors. The nanowires were passivated with small molecules and Al2O3 to suppress surface recombination, which will increase the minority recombination lifetimes. As expected, the minority carrier recombination lifetime found by this approach increases by orders of magnitude. These wires were also made into PIN diodes, the leakage of which was reduced at least 1 order of magnitude after surface passivation by Al2O3. The minority recombination lifetime found from the leakage current of these devices is largely consistent with what we found from our analytical photoresponse principle. As a further step, we performed scanning photocurrent microscopy to find the minority diffusion length from which we found that the minority recombination lifetime is close to what we found from the analytical photoresponses. In short, this work validated that our analytical response principle is a reliable method to find the minority recombination lifetime in low-dimensional semiconductors. [ABSTRACT FROM AUTHOR]

Fabrication of modern solid-state devices demands precise control of shape and dimensions, which requires an accurate knowledge of the role that surfaces play in such devices. To contribute to the understanding of surface effects on silicon nanowires, we present an atomistic study of the electronic properties of silicon nanostructures exhibiting surface facets over the (100) , (110) , (111) , and (112) crystallographic planes. We calculate the electronic structure of slabs in such a way that the effect of individual facets may be observed. Subsequently, we determine the electronic structure of nanowires grown along the [ 100 ] , [ 110 ] , [ 111 ] , and [ 112 ] directions, with surfaces defined by a combination of the mentioned facets. Our nanowires comprise diameters ranging from 1 to 6.7 nm and structures with more than 1000 atoms. We discuss the band structure, the relation between direct and indirect bandgaps, and the density of states. We base our calculations on semiempirical pseudopotentials where we implement complex potentials to describe passivants. We find that there is a transition from direct to indirect gap for the [ 111 ] direction at approximately 2 nm and that the difference between the direct and indirect gap may reach more than 300 meV depending on the diameter. We show that the occurrence of a direct bandgap is favored by the presence of the (100) facet and that it is related to a higher surface density of states. Conversely, we find that the (111) facet is the most inert surface type with a lower surface density of states. [ABSTRACT FROM AUTHOR]

InAs nanowires (NWs) were grown on SiOx pinholes formed on Si(111) substrates by molecular beam epitaxy. Influences of electron-beam (EB) irradiation on the SiOx layer on the pinhole formation and the subsequent InAs NW growth were studied. As the EB irradiation dose increased, the pinhole density in the SiOx layer decreased. From atomic force microscopy, transmission electron microscopy, and x-ray photoelectron spectroscopy results, it was found that the pinhole etching of the SiOx layer by Ga droplets was suppressed by carbon adsorption due to the EB irradiation. By forming high-density pinholes on the SiOx layer without the EB irradiation, high-density InAs NWs with 1–2 × 1010 cm−2 were grown successfully, and the uniformity in the NW diameter improved. The standard deviation of the NW diameter was 1.8 nm (8.8%) for high-density NWs. In addition, the NW diameter decreased with decreasing EB dose, and the NW diameter was controlled by adjusting the diameter of Ga droplets forming the pinholes. As the NW diameter decreased, photoluminescence spectra of the NWs shifted to higher energies than the bandgap energy of the wurtzite InAs bulk. From these results, we successfully fabricated high-density and high-uniformity InAs NWs with quantum size effects on EB-unirradiated SiOx/Si(111). [ABSTRACT FROM AUTHOR]

Epitaxial BaTiO3 integrated on Si or Si-on-insulator using off-axis radio frequency sputtering is a promising material platform for building electro-optic modulators based on the Pockels effect. Barium titanate thin films with c-axis orientation have been epitaxially integrated on silicon-on-insulator wafers. They exhibit excellent structural quality with Pockels coefficient (r33) > 130 pm/V and propagation loss <2 dB/cm. Our results show that off-axis sputtered BaTiO3 films yield electro-optic modulation similar to that of high-quality films grown by molecular beam epitaxy and that the material is suitable for implementation of low-power Mach–Zehnder interferometer electro-optic modulators integrated on silicon in a Z-cut configuration. [ABSTRACT FROM AUTHOR]

Semiconductor industry is experiencing unprecedented growth, still driven by Moore's law, which is continually delivering devices with improved performance at lower costs. The continuation of this development places the industry in a divergent trade-off between economic attractiveness, technological feasibility, and the need for further performance improvement. Since the mainstream semiconductor technologies are silicon-based, new disruptive innovations are needed to gain additional performance margins. The use of nanowires is the preferred approach for preserving electrostatic control in the MOS transistor channel, and the application of mechanical stress is a booster of carrier mobility. It is in this context that this paper presents the design, fabrication, theoretical modeling, and characterization of a measurement platform to characterize the mechanical tensile stress of extremely narrow Si nanowires as small as 14.2 ± 1.12 nm in width. The proposed measurement platform enables a precise control of uniaxial strain, in terms of both amplitude and location, through the implementation of a stoichiometric Si3N4 pulling strand exerting a high tensile force on silicon nanowires. Reported devices are fabricated using a silicon-on-insulator wafer with fully complementary metal–oxide–semiconductor-compatible processing and top-down approach. It is observed that the mechanical strength of nanostructured Si is size-dependent and increases with miniaturization. Characterization revealed a record tensile strength value of 7.53 ± 0.8% (12.73 ± 1.35 GPa) for the narrowest nanowires fabricated using a top-down approach. [ABSTRACT FROM AUTHOR]

The development of electrodes for hydrogen evolution via water splitting in a neutral electrolyte is highly desirable, especially considering that natural water resources such as seawater typically have a neutral pH. In this study, silicon nanowires (SiNWs) arrays with uniform silver (Ag) decoration are prepared as a cathode material, which exhibits excellent and stable electrochemical performance for neutral water electrolysis. Ag ions, utilized in the preparation of SiNWs through metal-assisted chemical etching technique, are retained and decorated within the SiNWs array without undergoing a dissolution process, referred to as Native SiNWs. Remained Ag+ ions on the SiNWs are activated photocathodically and reduced to Ag0, resulting in a significantly enhanced performance as an electrocatalyst for hydrogen evolution reaction (HER). Hence, this photocathodic activation of Native SiNWs (PCA-Native SiNWs) eliminates the need for additional cocatalyst deposition for HER, utilizing the Ag ions employed in the SiNWs preparation process. This enhancement in HER activity is exclusively observed by photocathodic activation, not by cathodic activation without light irradiation, indicating the crucial role of photoelectrons in SiNWs under light irradiation for the activation. Additionally, the nanowire structure serves as an ideal platform for Ag nanoparticles, providing sufficient surface area, resulting in excellent dispersion and an increased number of active sites. Furthermore, PCA-Native SiNWs demonstrates outstanding electrochemical stability for over 60 h, with no significant reduction in current density or structural degradation in a neutral electrolyte. Several characterizations and electrochemical analyses have been conducted to elucidate the in-situ decoration of Ag nanoparticles on SiNWs and investigate the surface chemistry for the activation mechanism. This work introduces a new perspective on using Ag-decorated SiNWs directly as an electrocatalyst for effective hydrogen evolution in a neutral media. Saleem et al., "A Strategy to Reutilize Silver Nanoparticles on Silicon Nanowires via Photocathodic Activation for Enhanced and Sustainable Hydrogen Evolution"Native SiNWs, which are prepared by retaining Ag nanoparticles during SiNW synthesis, exhibited better performance for HER than SiNWs. Additionally, the retained Ag can be more evenly distributed and reduced during photocathodic activation, resulting in significantly improved HER activity. [Display omitted] • Photocathodically activated Native SiNWs (PCA-Native SiNWs) are developed. • Retained Ag ions on SiNWs are reduced and activated by light irradiation and cathodic potential (photocathodic activation). • Reduced Ag enhances electrochemical performance of SiNWs as an electrocatalyst. • Ag nanoparticles are evenly distributed vis the dissolution-redeposition phenomenon. • PCA-Native SiNWs show stable activity in neutral pH. [ABSTRACT FROM AUTHOR]

A Schottky barrier tunneling field-effect transistor (SBT FET) built upon catalytically grown ultrathin silicon nanowires (SiNWs) offers a preferable low-temperature routine to construct top device layers for monolithic three-dimensional (3D) integration technology, but there still remain several peculiar electronic transport behaviors that need to be better understood. In this work, a high-performance SBT FET was fabricated based on orderly SiNWs grown via the in-plane solid–liquid–solid (IPSLSL) mechanism, achieving an Ion/Ioff ratio of 106 and a SS of 150 mV/dec. The as-fabricated device, with SBT contacts between SiNWs and Pt/Au source-drain electrodes, was analyzed and compared to a three-dimensional numerical model built via the TCAD simulator to extract the actual energy band profile and the bias distribution in the SBT FET, as well as the hole carrier mobility in the catalytic SiNW channels. This comparative investigation also reveals the limiting factors for the SBT transport and explains well the observed peculiar channel-bias-dependent drain-induced barrier-lowering (DIBL) behavior. These results provide an in-depth understanding of SBT FET and lay a solid basis for its future applications in high-performance logic and in-memory computing in advanced 3D architecture. [ABSTRACT FROM AUTHOR]

Direct bandgap group IV semiconductors, like strained Ge, GeSn, or hexagonal SiGe, are considered promising for photonic integration on silicon. For group IV semiconductor lasers, it is crucial to understand the carrier cooling efficiency toward the band edges. From a fundamental perspective, a study of carrier cooling within the Γ-valley of direct bandgap group IV semiconductors is particularly interesting since the Fröhlich interaction is expected to be very weak or even absent in these materials due to the nonpolar lattice. Intravalley carrier relaxation within the Γ-valley of a nonpolar semiconductor has not been experimentally accessible before since it has always been overshadowed by intervalley processes between energetically close indirect conduction band minima. Here, we study carrier cooling in direct bandgap hexagonal silicon-germanium (hex-SiGe) nanowires, allowing us to study carrier cooling in an isolated Γ-valley that is sufficiently separated from the indirect minima. We obtain a hot carrier cooling time of 180 ps in the Γ-valley of hex-SiGe. Although the cooling is much slower than in bulk polar group III/V materials due to the absence of Fröhlich interaction, it is comparable to the cooling time in an InGaAs MQW laser structure. We conclude that carrier cooling does not inherently limit hex-SiGe to serve as a laser gain material. This result is an important insight into the field of group IV semiconductor lasers. [ABSTRACT FROM AUTHOR]

Silicon (Si) is a promising anode material for high‐energy‐density lithium‐ion batteries. To achieve wide practical applications, it is highly desirable to build effective solidelectrolyte interphase (SEI) with high stability and high Li+ conductivity. Herein, a novel interface engineering strategy is demonstrated with the assistance of a surfactant and the self‐assembly of chitosan (CS) skin on Si surface. A high coating integrity of the Si particle is obtained compared to that without surfactants. Unlike traditional surface coatings, the positive charge of the applied CS layer enables it to selectively absorb PF6− anions in the electrolyte. The PF6− aggregates in Helmholtz layer lead to the formation of anion‐derived SEI enriched in LiF species. As the result, the prepared CS‐decorated Si anode exhibits a high initial coulombic efficiency of 92.2% and a high rate capability of 2200 mAh g−1 capacity at 10 C rate. After 500 charge–discharge cycles, it is still able to retain a reversible capacity 1621.3 mAh g−1. Furthermore, the excellent electrochemical property is demonstrated in full cells against NCM811 cathode. The novel interface engineering strategy provides a new SEI mechanism and demonstrates a feasible and effective way to develop high‐performance Si‐based lithium‐ion batteries. [ABSTRACT FROM AUTHOR]

Comprehensive Summary Photocatalysis is a promising green approach for water purification. The diversity of water pH values is a key factor that restricts its practical application since pH affects the adsorption of organic molecules, the stability of catalysts and photocatalytic performance. Here, we report a pH–independent, efficient and stable photocatalytic system with a liquid (water)–liquid (oil)–solid (semiconductor) (L–L–S) triphase interface microenvironment. The system is fabricated by coating a thin layer of silicon oil on the surface of ZnO nanowire arrays, a model chemically unstable semiconductor in both acidic and alkaline solutions. We show that the unique interface makes the dye adsorption pH independent and prevents the semiconductor from being corroded by strong acidic/alkaline solutions, leading to a stable and efficient photocatalytic reaction over a wide pH range (1—14). These findings reveal a promising path for the development of high‐performance catalysis systems applicable in complex water environments. [ABSTRACT FROM AUTHOR]

In this study, we successfully synthesized silicon nanotubes (Si-NTs) and silicon nanowires (Si-NWs) in a controllable manner using a catalyst- and template-free method through the direct electrolysis of SiO2 in a molten CaCl2-CaO system, while also proposing a novel formation mechanism for Si-NTs. Si-NWs are formed through electro-deoxidation when the cell voltage is within the range of CaO decomposition voltage and SiO2 decomposition voltage. By subsequently adjusting the voltage to a value between the decomposition potentials of CaCl2 and CaO, in-situ electro-deoxidation of CaO takes place on the surface of the synthesized Si-NWs, leading to the formation of a Ca layer. The formation of Ca-Si diffusion couple leads to the creation of vacancies within the Si-NWs, as the outward diffusion rate of Si exceeds the inward diffusion rate of Ca. These differential diffusion rates between Si and Ca in a diffusion couple exhibit an analogy to the Kirkendall effect. These vacancies gradually accumulate and merge, forming large voids, which ultimately result in the formation of hollow SiCa-NTs. Through a subsequent dealloying process, the removal of the embedded calcium leads to the formation of Si-NTs. Following the application of a carbon coating, the Si-NTs@C composite showcases a high initial discharge capacity of 3211 mAh·g−1 at 1.5 A·g−1 and exhibits exceptional long-term cycling stability, maintaining a capacity of 977 mAh·g−1 after 2000 cycles at 3.0 A·g−1. [ABSTRACT FROM AUTHOR]

This study investigates the fabrication and characterization of an innovative nanoelectromechanical system force sensor that utilizes suspended submicron silicon nanowires for detecting multi‐axis forces in the micro‐newton range. The sensor combines microscale shuttle platforms with nanowire piezoresistors along with retaining springs. Its fabrication involves a rather involved set of Si deep etching, doping, metallization, release, and encapsulation processes on silicon‐on‐insulator wafers. Electromechanical characterization demonstrates sensor reliability under mechanical strains up to the level of 10% as well as gauge factor measurements. Dynamic response analysis confirms a high resonant frequency of 12.34 MHz with a quality factor of 700 in air, closely matching simulation results. Thermal characterization of the sensor reveals a Temperature Coefficient of Resistance of 6.4 × 10⁻⁴ °C⁻¹. Sensor characterization under jet flow reveals its ability to detect strong flows demonstrating a resistance change of as much as 2.02% under sustained gas flow through a nozzle. Sensor integration into the gas flow measurement setup demonstrates its versatility in detecting small forces, paving the way for further exploration of thermomechanical factors. Combined with its miniature footprint, the sensor's electromechanical performance hints at applications in the analysis of velocity gradients in microscale flows including micro/nano diffusers and nozzles in small satellite propulsion. [ABSTRACT FROM AUTHOR]

Dynamic nuclear polarization (DNP) has revolutionized the field of nuclear magnetic resonance spectroscopy, expanding its reach and capabilities to investigate diverse materials, biomolecules, and complex dynamic processes. Bringing high-efficiency DNP to the nanometer scale would open exciting avenues for studying nanoscale nuclear spin ensembles, such as single biomolecules, virus particles, and condensed matter systems. Combining pulsed DNP with nanoscale force-detected magnetic resonance measurements, we demonstrated a 100-fold enhancement in the Boltzmann polarization of proton spins in nanoscale sugar droplets at 6 kelvin and 0.33 tesla. Crucially, this enhancement corresponds to a factor of 200 reduction in the averaging time compared to measurements that rely on the detection of statistical fluctuations in nanoscale nuclear spin ensembles. These results substantially advance the capabilities of force-detected magnetic resonance detection as a practical tool for nanoscale imaging. [ABSTRACT FROM AUTHOR]

In order to overcome the problems about the volume expansion and poor electronic conductivity of Si, a flexibility and rigidity double coating layer CNTs-rGO- PAIN was constructed. The CNTs-rGO-PANI network with porous structure and high electronic conductivity provides sufficient space to accommodate the volume change of Si, and abundant transmission path for electron and Li ion. Moreover, the coating network with flexibility and rigidity characteristic could absorb the expansion stress of Si, maintain electrode structural integrity, promote the growth of stable SEI. The polymer-nanocarbon network dual coating layer effectively safeguards the electrochemical-mechanical interplay within the electrode. The 20Si-CNTs-rGO-PANI exhibits a reversible capacity as high as 1856 mAh g−1 after 400 cycles at 0.2 A g−1 and a remarkable rate capacity of 570 and 459 mAh g−1, at 5 and 10 A g−1, respectively. The outstanding Li ion storage performance of 20Si-CNTs-rGO-PANI anode, suggests the flexibility-rigidity dual coating layer strategy is a potential way to improve the performance of alloy type anode. The CNTs-rGO-PAIN flexibility-rigidity double coating layer is synthesized to mitigate volume expansion stress of Si. [Display omitted] • A flexibility-rigidity film is constructed to mitigate volume expansion of Si. • CNTs-rGO-PANI provides a protection of electrochemical-mechanical interplay in Si. • After cycling, the free-standing electrode also can be bent without breaking. • The 20Si-CNTs-rGO-PANI anode shows excellent cycling and rate performance. [ABSTRACT FROM AUTHOR]

Silicon carbide (SiC) single crystals have great prospects for high-temperature energy storage due to their robust structural stability, ultrahigh power output, and superior temperature stability. However, energy density is an essential challenge for SiC-based devices. Herein, a facile two-step strategy is proposed for the large-scale synthesis of a unique architecture of SiC nanowires incorporating MnO2 for enhanced supercapacitors (SCs), arising from the synergy effect between the SiC nanowires as a highly conductive skeleton and the MnO2 with numerous active sites. The SiC@MnO2 integrated electrode-based SCs with ionic liquid (IL) electrolytes were assembled and delivered outstanding energy and power density, as well as a great lifespan at 150 °C. This impressive work offers a novel avenue for the practical application of SiC-based electrochemical energy storage devices with high energy density under high temperatures. [ABSTRACT FROM AUTHOR]

a -axis-oriented AlN(100) films are identified as promising candidates for surface acoustic wave devices owing to their high transversal-acoustic velocity. Achieving uniform films across a wafer scale is crucial for enhancing device performance and minimizing manufacturing costs. In this study, we employ radio-frequency magnetron sputtering to deposit AlN(100) films on 2-in Si(100) wafers. We further examine the influence of various process parameters on the nonuniformity of film thickness and structural properties, including crystallite size, microstrain, and dislocation density. The optimization of parameters leads to the selection of a gas flow ratio of N 2 :Ar = 4:7, a sputtering power of 160 W, and a substrate temperature of 350 °C. Under these optimized conditions, the AlN films not only demonstrate a preferred (100) orientation and remarkable crystallinity, as indicated by a full width at half maximum of the X-ray diffraction peak of just 0.03°, but also achieve an optimal film thickness nonuniformity of 1.66 %. Our results offer valuable insights for the wafer-scale fabrication of AlN(100) films, potentially enhancing industrial production yields and reducing costs. [ABSTRACT FROM AUTHOR]

Thermal management becomes increasingly important in silicon gate‐all‐around (GAA) field‐effect transistor (FETs) for 3 nm technology node and beyond. The channel thermal conductivity significantly differs from bulk silicon. Precise determination of thermal conductivity is crucial for device evaluation and optimization. This study investigates the thermal conductivity of silicon nanowires, examining the complex interplay between size and channel orientation. The conventional nonequilibrium molecular dynamics (NEMD) method is used with the standard Stillinger–Weber potential at the atomic scale. The results indicate that the thermal conductivity of silicon nanowires along the [100] direction increases monotonically with both length (L) and cross‐sectional side length (D). Conversely, the [110] direction exhibits nonmonotonic variation in thermal conductivity with D, due to increased acoustic–optic phonon scattering. For GAA FET devices with a silicon nanowire channel of L = 20 nm and D = 5 nm, the NEMD calculations yield thermal conductivities of 10.8 W m·K−1 for the [100] direction and 25.3 W m·K−1 for the [110] direction. Subsequently, the self‐heating effect (SHE) in silicon nanowire GAA FETs by technology computer‐aided design with the modified channel conductivity is analyzed. The results suggest that silicon nanowires with the [110] transport direction are more suitable for device design. [ABSTRACT FROM AUTHOR]

This paper presents a novel biosensor, the graded channel gate-all-around (GC-GAA) silicon nanowire-FET biosensor, which utilizes dielectric modulation through a cavity carved from the drain side for label-free biomolecule detection. The biomolecules that become fixed in the cavity region alter the device's electrical properties, such as impedance, resistance, capacitance, and charge field effect, resulting in changes in the biosensing device's threshold voltage, drain current, and sub-threshold slope. The cavity length varies between 10 and 14 nm, and different dielectric constants are used. The study investigates the effect of various biomolecules on the device's performance, including drain current (for dielectric constant = 1 and3.57), sub-threshold slope, threshold voltage, switching ratio, energy band, transconductance, and electric field. The obtained drain currents for device-1 are 2.96 µA and 2.75 µA with threshold voltage of 0.78 V and 0.76 V for S_D/D_S graded channel respectively for copper as gate metal. Similarly the drain currents for device-2 are 0.97 µA and 1.13 µA with threshold voltage of 0.73 V and 0.68 V for S_D/D_S graded channel respectively. However, for device-3 the drain currents are 0.91 µA and 1.08 µA with threshold voltage of 0.73 V and 0.67 V. The results indicate that higher dielectric constants result in higher drain current levels and increased device sensitivity. The GC-GAA-NWFET biosensor demonstrated high sensitivity (~ 138 mV) and low leakage current, making it a promising candidate for biosensing applications. [ABSTRACT FROM AUTHOR]

Recently, a great deal of interest has been focused on developing sensors that can measure both pressure and light. However, traditional sensors are difficult to integrate into silicon (Si)-based integrated circuits. Therefore, it is particularly important to design a sensor that operates on a new principle. In this paper, junction piezotronic transistor (JPT) arrays based on zinc oxide (ZnO) nanowire are demonstrated. And the JPT arrays show high spatial resolution pressure and light mapping with 195 dpi. Because ZnO nanowires are arranged vertically above the p-type Si channel's center of the transistor, the width of the heterojunction depletion region is constricted by the positive piezoelectric potential generated by strained ZnO. In addition, photogenerated charge carriers can be created in the Si channel when JPT is stimulated by light, which increases its electrical conductivity. Consequently, the external pressure and light distribution information can be obtained from the variation in the output current of the device. The prepared JPT arrays can be compatible with Si transistors, which make them highly competitive and make it possible to incorporate both pressure and light sensors into large integrated circuits. This work will contribute to many applications, such as intelligent clothing, human–computer interaction, and electronic skin. [ABSTRACT FROM AUTHOR]

This brief review covers the thermoelectric properties of one-dimensional materials, such as nanowires and nanotubes. The highly localised peaks of the electronic density of states near the Fermi levels of these nanostructured materials improve the Seebeck coefficient. Moreover, quantum confinement leads to discrete energy levels and a modified density of states, potentially enhancing electrical conductivity. These electronic effects, coupled with the dominance of Umklapp phonon scattering, which reduces thermal conductivity in one-dimensional materials, can achieve unprecedented thermoelectric efficiency not seen in two-dimensional or bulk materials. Notable advancements include carbon and silicon nanotubes and Bi3Te2, Bi, ZnO, SiC, and Si1−xGex nanowires with significantly reduced thermal conductivity and increased ZT. In all these nanowires and nanotubes, efficiency is explored as a function of the diameter. Among these nanomaterials, carbon nanotubes offer mechanical flexibility and improved thermoelectric performance. Although carbon nanotubes theoretically have high thermal conductivity, the improvement of their Seebeck coefficient due to their low-dimensional structure can compensate for it. Regarding flexibility, economic criteria, ease of fabrication, and weight, carbon nanotubes could be a promising candidate for thermoelectric power generation. [ABSTRACT FROM AUTHOR]

Surface plasmons possess the capability to overcome the diffraction limit, making them highly promising for a wide range of applications in the field of nanophotonics. Here we design a sodium-based hybrid plasmonic waveguide consisting of an elliptical Si nanowire separated from the Na film by a low-index SiO2 layer. The modal properties of the proposed waveguide are thoroughly investigated by using the finite element method with a focus on parameters such as effective mode index, propagation length, normalized mode area, and figure of merit. The results show that the hybrid modes exhibit ultra-low loss with propagation length in the millimeter range as well as high figure of merit over 103. Besides, the hybrid plasmonic waveguide with a vertical elliptical nanowire provides a stronger energy constrain ability compared with that with a horizontal elliptical nanowire. The proposed waveguide may contribute to the development of nanoscale devices in photonic integration circuits, such as lasers, sensors, and modulators. [ABSTRACT FROM AUTHOR]

Context: Silicon carbide nanowires (SiCNWs) are considered a promising alternative material for application in lithium-ion batteries, with researchers striving to develop new electrode materials that exhibit high capacity and high charge/discharge rate performance. To gain a deeper understanding of the application of SiCNWs in semiconductor material science and energy supply fields, we investigated the effects of nanoscale and surface lithiation on the electrical and mechanical properties of SiCNWs grown along the [111] direction. First-principles calculation was used to study their geometries, electronic structures, and associated electrochemical properties. Herein, we considered SiCNWs with full hydrogen passivation, full lithium passivation, and mixed passivation at different sizes. The formation energy indicates that the stability of SiCNWs increases with the increasing diameter, and the surface-lithiated SiC nanowires (Li-SiCNWs) are found to be energetically stable. The mixed passivated SiCNWs exhibit the properties of indirect band gap with the increase of lithium atoms on the surface, while the fully lithium passivated nanowires exhibit metallic behavior. Charge analysis shows that a portion of the electrons on the lithium atoms are transferred to the surface atoms of the nanowires and electrons prefer to cluster more near the C atoms. Additionally, Li-SiCNWs still have good mechanical resistance during the lithiation process. The stable open-circuit voltage range and theoretical capacity of these SiCNWs indicate their suitability as anode materials. Method: In this study, Materials Studio 8.0 was used to construct the models of the SiCNWs. And all the density functional theory (DFT) calculations were performed by the Vienna ab initio Simulation Package (VASP). The self-consistent field calculations are performed over a Monkhorst–Pack net of 1 × 1 × 6 k-points. The energy convergence criteria for the self-consistent field calculation were set to 10−5 eV/atom with a cutoff energy of 400 eV. [ABSTRACT FROM AUTHOR]

In this paper we establish rigorously a one dimensional model of a junction of several ferromagnetic nanowires. Such structures appear in nano electronics or in new memory devices. We present also a numerical scheme adapted to this configuration and we compare our results with the 3d simulation obtained with the code EMicroM. [ABSTRACT FROM AUTHOR]

Conductive textiles (c-textiles) allow a significant advancement in wearable technology, offering new opportunities for mobile devices. Silver nanowires (AgNWs) with exceptional electrical conductivity, flexibility, and stretchability have been studied as the most promising conductive materials to provide electrical conductivities to insulating textiles. In this paper, an overview of the recent advancements in the synthesis and application of AgNWs and their integration into textile materials are discussed, highlighting their applications to various electronic devices. The diverse applications of AgNWs to transparent conducting electrodes; and multifunctional fabrics capable of sensing, heating, and providing electromagnetic interference shielding are introduced underscoring the versatility and potential of AgNW-based textiles. Based on the overview, challenges of AgNW-based c-textiles including low durability and difficult scalability of production processes are discussed which help readers to understand the future direction of the research of AgNW-based c-textiles. [ABSTRACT FROM AUTHOR]

Various electrocatalysts are extensively examined for their ability to selectively produce desired products by electrochemical CO2 reduction reaction (CO2RR). However, an efficient CO2RR electrocatalyst doesn't ensure an effective co‐catalyst on the semiconductor surface for photoelectrochemical CO2RR. Herein, Bi2S3 nanorods are synthesized and electrochemically reduced to Bi nanoplates that adhere to the substrates for application in the electrochemical and photoelectrochemical CO2RR. Compared with commercial‐Bi, the Bi2S3‐derived Bi (S‐Bi) nanoplates on carbon paper exhibit superior electrocatalytic activity and selectivity for formate (HCOO−) in the electrochemical CO2RR, achieving a Faradaic efficiency exceeding 93%, with minimal H2 production over a wide potential range. This highly selective S‐Bi catalyst is being employed on the Si photocathode to investigate the behavior of electrocatalysts during photoelectrochemical CO2RR. The strong adhesion of the S‐Bi nanoplates to the Si nanowire substrate and their unique catalytic properties afford exceptional activity and selectivity for HCOO− under simulated solar irradiation. The selectivity observed in electrochemical CO2RR using the S‐Bi catalyst correlates with that seen in the photoelectrochemical CO2RR system. Combined pulsed potential methods and theoretical analyses reveal stabilization of the OCHO* intermediate on the S‐Bi catalyst under specific conditions, which is critical for developing efficient catalysts for CO2‐to‐HCOO− conversion. [ABSTRACT FROM AUTHOR]

In recent decades, there has been a significant increase in the application of single‐molecule electrical analysis platforms in studying proteins and peptides. These advanced analysis methods have the potential for deep investigation of enzymatic working mechanisms and accurate monitoring of dynamic changes in protein configurations, which are often challenging to achieve in ensemble measurements. In this work, the prominent research progress in peptide and protein‐related studies are surveyed using electronic devices with single‐molecule/single‐event sensitivity, including single‐molecule junctions, single‐molecule field‐effect transistors, and nanopores. In particular, the successful commercial application of nanopores in DNA sequencing has made it one of the most promising techniques in protein sequencing at the single‐molecule level. From single peptides to protein complexes, the correlation between their electrical characteristics, structures, and biological functions is gradually being established. This enables to distinguish different molecular configurations of these biomacromolecules through real‐time electrical monitoring of their life activities, significantly improving the understanding of the mechanisms underlying various life processes. [ABSTRACT FROM AUTHOR]

We have examined the origins of polytype selection during metal-mediated molecular-beam epitaxy of GaN nanowires (NWs). High-angle annular dark-field scanning transmission electron microscopy reveals [111]-oriented zinc blende (ZB) NWs and [0001]-oriented wurtzite (WZ) NWs, with SixNy at the interface between individual NWs and the Si (001) substrate. Quantitative energy dispersive x-ray spectroscopy reveals a notably higher Si concentration of 7.0% ± 2.3% in zinc blende (ZB) NWs than 2.3% ± 1.2% in wurtzite (WZ) NWs. Meanwhile, density functional theory calculations show that incorporation of 8 at. % Si on the Ga sublattice inverts the difference in formation energies between WZ and ZB GaN, such that the ZB polytype of GaN is stabilized. This identification of Si and other ZB polytype stabilizers will enable the development of polytype heterostructures in a wide variety of WZ-preferring compounds. [ABSTRACT FROM AUTHOR]

Here, we characterize the photovoltage of n-Si/Au light-addressable electrodes (LAEs) over a range of solution potentials from ca. −1 to +1 V. We find that the n-Si/Au photoelectrodes show photovoltages consistent with a semiconductor/liquid junction in contrast to a buried junction, which opposes our previous understanding of how photovoltage originates in these sensors. [ABSTRACT FROM AUTHOR]

The new lithium arsenidotetrelates Li8SiAs4, Li8GeAs4, Li14SiAs6, Li14GeAs6 and Li14SnAs6 were synthesized via ball milling and structurally characterized by Rietveld analysis of X-ray powder diffraction data. The aliovalent substitution of lithium in hexagonal Li3As by introducing a tetravalent tetrel cation stabilizes cubic structures for Li8TtAs4 (Tt = Si, Ge) in the space group Pa3¯ and for the lithium richer compound Li14TtAs6 (Tt = Si, Ge, Sn) in the higher symmetrical space group Fm3¯m (no. 225). Thermal properties of the arsenidotetrelates were investigated via high temperature powder diffraction and differential thermal analysis revealing a decomposition process of the lithium richer arsenidotetrelate (Li14TtAs6 → Li8TtAs4 + 2Li3As) into the lithium poorer arsenidotetrelates and lithium arsenide at moderate temperatures. Impedance spectroscopy shows moderate to good lithium ion conductivity for the lithium arsenidotetrelates. [ABSTRACT FROM AUTHOR]

Lithium ion batteries play an important role in various energy storage technologies due to their good safety performance. As an anode material, silicon has attracted attention for its higher theoretical capacity than commercial graphite. But large volume expansion and unstable solid electrolyte interface (SEI) during the cycling of silicon lead to rapid capacity decay, which limits the commercial application of silicon anode. In this article, Si/BiPO 4 anode materials were prepared by solvothermal reaction. After morphology analysis and constant current charge discharge cycle analysis of Si/BiPO 4 anode materials with different mass ratios, it was found that Si/BiPO 4 anode materials with the mass ratio of 7:3 exhibited more excellent electrochemical performance. The conversion reaction of BiPO 4 and Li generates Bi and Li 3 PO 4 , and the alloying reaction of Bi generates Li 3 Bi. Bi and Li 3 Bi reduce the internal resistance of the Si/BiPO 4 composite, and Li 3 PO 4 is distributed on the surface of Si material, participating in the formation of SEI film and improving the stability of the material. At a current density of 500 mA g−1, the first discharge specific capacity of the Si/BiPO 4 anode is 2672.1 mA h g−1. After 200 cycles, the discharge specific capacity remains at 1308.9 mA h g−1. The electrochemical impedances of pure Si and Si/BiPO 4 anode materials before and after cycling were analyzed. It was found that the resistance of the Si/BiPO 4 anode before and after 100 cycles was lower than that of pure Si materials, which further proved that the addition of BiPO 4 material helps to improve the charge transfer ability of pure silicon materials. [ABSTRACT FROM AUTHOR]

Perovskite SrVO 3 stands out as a promising anode material for lithium-ion batteries due to its inherent redox activity, excellent electrical conductivity, and structural adaptability. Despite these advantages, challenges persist, such as in achieving high tap density and volumetric specific capacity. In this study, we overcome these challenges by finely regulating particle size and constructing a tailored surface structure for SrVO 3. The implementation of ball milling during the synthesis process proves to be a simple yet highly efficient method for simultaneously tailoring particle size and in-situ creating an amorphous layer on SrVO 3 particles. The reduction in particle size not only facilitates enhanced electron and ion transport but also significantly improves the tap density of SrVO 3 , increasing it from 2.61 to 3.15 g cm−3. The in-situ construction of an amorphous layer introduces a multitude of defects and high valence V5+. These defects serve as active sites for lithium ions, while the V5+ species contribute to increased electron transfer, collectively resulting in a high gravimetric specific capacity. The engineered SrVO 3 anode delivers an impressive volumetric capacity of 1134 mAh cm−3 at 0.1 A g−1, surpassing both pristine SrVO 3 (733 mAh cm−3) and commercial graphite anode (∼460 mAh cm−3). [ABSTRACT FROM AUTHOR]

This work presents the pore defects repair of additively manufactured chopped carbon fibre reinforced silicon carbide (CCF/SiC) composites using a combination of chemical vapour deposition (with methyltrichlorosilane and hydrogen as the precursor material) and reactive melt infiltration. The in-situ generation of silicon carbide nanowires (SiC nws) in the CCF/SiC composites significantly reduced the initial pore defects size, while the secondary SiC and free Si filled and closed the pore defects. The X-CT shows that the CCF/SiC composite after pore defects repair was internally dense and no significant pore geometry was observed. The incorporation of micron-sized CCF and nano-sized SiC nws as reinforcing phases resulted in a synergistic toughening effect. Specifically, the CCF enhances toughness through fibre debonding and pull-out mechanisms, while the SiC nws contribute to toughening through nanowire bridging and pull-out mechanisms. This dual toughening mechanism significantly improved bending strength from 210.7 to 274.5 MPa and elevated the fracture toughness from 3.2 to 3.6 MPa m1/2. Another notable advantage of the SiC nws is their ability to form a space network and reduce the thermal expansion coefficient. Consequently, this novel microstructural pore defects repair approach further enhanced the overall performance and reliability of the CCF/SiC composites based on additive manufacturing. This innovative approach holds great promise for the development of high-performance complex-structure CCF/SiC composites with wide-ranging applications across various industries. [ABSTRACT FROM AUTHOR]

Highlights Dielectric elastomers (DEs), have attracted interest because they can replicate the behavior of muscles. They can change shape when subjected to an electric field. A novel DE is proposed in this study that incorporates silicon carbide (SiC) nanowires into silicone rubber (SR). The nanowires were propagated using polycarbosilane via a chemical vapor reaction (CVR). A boronate polymer was employed to promote compatibility between SR and SiC nanowires which modified the nanowire surfaces, leveraging a strong adhesive quality of the catechol moiety. Electrohydrodynamic (EHD) inkjet printing was then used to form the DEs into various shapes. These DEs had substantial dielectric constants of the order of 4.46. Significantly, one of the DEs achieved the highest actuated area strain of 20.36% in an electric field of 16.5 V/μm, demonstrating excellent driving performance. Furthermore, when used the fabricated DEs showed pronounced long‐term stability, meaning they are capable of finding applications in artificial intelligence, biomimetics, aerospace, and other disciplines. The SiC nanowires were obtained through a chemical vapor reaction. A boronate polymer with catechol moiety was used to modify the SiC nanowires. DEs were formed various shapes by inkjet printing. DEs achieved very large actuated strains of up to 20.36% at 16.5 V/μm. [ABSTRACT FROM AUTHOR]

When time-reversal and inversion symmetry are broken, superconducting circuits may exhibit a so-called diode effect, where the critical currents for opposite directions of the current flow differ. In recent years, this effect has been observed in a multitude of systems, and the different physical ingredients that may yield such an effect are well understood. On a microscopic level, the interplay between spin–orbit coupling and a Zeeman field may give rise to a diode effect in a single Josephson junction. However, so far, there is no analytical description of the effect within a simple model. Here, we study a single-channel nanowire with Rashba spin–orbit coupling and in the presence of a Zeeman field. We show that the different Fermi velocities and spin projections of the two pseudo-spin bands lead to a diode effect. Simple analytical expressions for the diode efficiency can be obtained in limiting cases. [ABSTRACT FROM AUTHOR]

Nanomechanical resonators provide a versatile platform for nanoscale mass sensing and force microscopy, as well as for enhancing light‐matter interaction offering unique functionality for optomechanical applications. In this way, discovering new approaches for coupling light with the mechanical degrees of freedom opens the strong desire paths for further developing of nanomechanical technology. Here, the parametric optothermal modulation of hybrid nanomechanical systems consisting of carbon nanowire with a silicon nanoparticle on its top, is reported. The mechanism of the modulation is based on the periodic optical heating of the nanowire and further modulation of the elasticity parameters. Utilizing the silicon nanoparticle provides additional functionality owing to optical absorption enhanced with Mie resonance and the unique feature of optical Raman thermometry enabling optical monitoring of local temperature. It is shown that the parametric mechanism of modulation allows for a significant increase of the optomechanical coupling strength. [ABSTRACT FROM AUTHOR]

The silicon (Si) anode is prone to forming a high electric field gradient and concentration gradient on the electrode surface under high‐rate conditions, which may destroy the surface structure and decrease cycling stability. In this study, a ferroelectric (BaTiO3) interlayer and field polarization treatment are introduced to set up a built‐in field, which optimizes the transport mechanisms of Li+ in solid and liquid phases and thus enhances the rate performance and cycling stability of Si anodes. Also, a fast discharging and slow charging phenomenon is observed in a half‐cell with a high reversible capacity of 1500.8 mAh g−1 when controlling the polarization direction of the interlayer, which means a fast charging and slow discharging property in a full battery and thus is valuable for potential applications in commercial batteries. Simulation results demonstrated that the built‐in field plays a key role in regulating the Li+ concentration distribution in the electrolyte and the Li+ diffusion behavior inside particles, leading to more uniform Li+ diffusion from local high‐concentration sites to surrounding regions. The assembled lithium‐ion battery with a BaTiO3 interlayer exhibited superior electrochemical performance and long‐term cycling life (915.6 mAh g−1 after 300 cycles at a high current density of 4.2 A g−1). The significance of this research lies in exploring a new approach to improve the performance of lithium‐ion batteries and providing new ideas and pathways for addressing the challenges faced by Si‐based anodes. [ABSTRACT FROM AUTHOR]

Anomalous critical current enhancement was observed with increasing magnetic field in Josephson junctions based on Ge–Si core-shell nanowires. Despite the predicted topological properties of these nanowires, which could potentially lead to non-trivial superconducting order parameter symmetries, our investigation unveils a more generalized, non-topological explanation for the observed critical current enhancement in these devices. Our findings suggest that the enhancement arises from a thermalization process induced by the magnetic field, wherein in-gap quasiparticles are generated. These quasiparticles play a crucial role in enhancing the cooling of the device, thereby lowering the effective temperature and resulting in an increased critical current. Furthermore, we elucidate how this thermalization effect varies with device geometry and measurement configuration. [ABSTRACT FROM AUTHOR]

Rutin extracted from natural plants has important medical value, so developing accurate and sensitive quantitative detection methods is one of the most important tasks. In this work, HKUST-1@GN/MoO3-Ppy NWs were utilized to develop a high-performance rutin electrochemical sensor in virtue of its high conductivity and electrocatalytic activity. The morphology, crystal structure, and chemical element composition of the fabricated sensor composites were characterized by SEM, TEM, XPS, and XRD. Electrochemical techniques including EIS, CV, and DPV were used to investigate the electrocatalytic properties of the prepared materials. The electrochemical test conditions were optimized to achieve efficient detection of rutin. The 2-electron 2-proton mechanism, consisting of several rapid and sequential phases, is postulated to occur during rutin oxidation. The results show that HKUST-1@GN/MoO3-Ppy NWs have the characteristics of large specific surface area, excellent conductivity, and outstanding electrocatalytic ability. There is a significant linear relationship between rutin concentration and the oxidation peak current of DPV. The linear range is 0.50–2000 nM, and the limit of detection is 0.27 nM (S/N = 3). In addition, the prepared electrode has been confirmed to be useful for rutin analysis in orange juice. [ABSTRACT FROM AUTHOR]

To investigate the formation mechanism of wrinkle structures in imprinted resist masks generated by oxygen reactive ion etching (O2 RIE), we compared UV/ozone exposure (soft trimming) and O2 RIE (hard trimming) as oxidative trimming methods to tune the diameters of disk resist masks in ultraviolet nanoimprint lithography of Mie-resonant silicon nanodisks (Si NDs). Variations in the residual layer thicknesses of the imprinted resin patterns demonstrated that the wrinkle structures around the disk resist masks increased after the residual layer was removed completely. A comparison between soft and hard trimming indicated that the UV/ozone exposure maintained a relatively small edge roughness of the disk resist masks during a reduction in diameter from 370 to 160 nm, whereas O2 RIE caused a large edge roughness owing to wrinkle structures with diameters below 300 nm. The wrinkled structures are likely to have originated from the wrinkling instability caused by the formation of an ion-damaged layer near the resist surfaces via O2 RIE involving ion bombardment, which could be transferred to a monocrystalline Si layer on a synthetic quartz substrate. Microscopic optical measurements revealed that 230 nm-diameter Si-ND arrays with small and large edge roughnesses exhibited almost identical reflection spectra at visible wavelengths. [ABSTRACT FROM AUTHOR]

High‐quality liquid gate‐all‐around (LGAA) silicon nanowire (NW) field‐effect transistor (FET) biosensors are fabricated and studied their properties in 1 mm phosphate‐buffered saline solution with pH = 7.4 using transport and noise spectroscopy. At small VDS, the conventional current behavior of FET with a linear dependence on voltage is registered in the output current‐voltage (I‐VM) characteristics with M = 1. At drain‐source voltage VDS > 0.6 V, the I‐V characteristics with stronger power M are revealed. It is shown that the current in LGAA NW FETs follows current proportional to voltage in power M = 4 dependence on small liquid gate voltages. Transport and noise spectroscopy analyses demonstrate that the obtained results are associated with the space‐charge‐limited current (SCLC) effect. Moreover, a strong two‐level random telegraph signal (RTS) is found in the region corresponding to SCLC at VDS values exceeding 0.6 V. The RTS related to single trap phenomena results in a well‐resolved Lorentzian component of noise spectra. The results demonstrate that the SCLC and two‐level RTS phenomenon are correlated effects. They should be taken into account during the development of single‐trap‐based devices, including biosensors. [ABSTRACT FROM AUTHOR]