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The fast-growing printing technologies play a significant role in increasing promotional and advertising activities in the manufacturing industry. Among these technologies, pad printing is a method in which the drawn image is transferred to the object directly. This method can be used in all other sectors in terms of permanence, production speed, and ease of use. To perform the pad printing process with a zero-defect policy, parameter optimization is vital. To obtain the desired efficiency, the main parameters affecting pad printing need to be enhanced and applied during the whole process such as engraving depth and silicon geometry. This work aims to observe the effects of the engraving depth and silicone geometry printing parameters on pad printing quality. With the optimized settings, the durability of the printing has been increased, the printing time performance has been improved and the error-free printing goal has been succeeded. The alterations made in engraving depth and silicone geometry were examined and the maximum printing efficiency and productivity are reached in our pad printing process.

H-BiVO4–x:Mo was successfully deposited on microwire-structured silicon substrates, using indium tin oxide (ITO) as an interlayer and BiOI prepared by electrodeposition as precursor. Electrodeposition of BiOI, induced by the electrochemical reduction of p-benzoquinone, appeared to proceed through three stages, being nucleation of particles at the base and bottom of the microwire arrays, followed by rapid (homogeneous) growth, and termination by increasing interfacial resistances. Variations in charge density and morphology as a function of spacing of the microwires are explained by (a) variations in mass transfer limitations, most likely associated with the electrochemical reduction of p-benzoquinone, and (b) inhomogeneity in ITO deposition. Unexpectedly, H-BiVO4–x:Mo on microwire substrates (4 μm radius, 4 to 20 μm spacing, and 5 to 16 μm length) underperformed compared to H-BiVO4–x:Mo on flat surfaces in photocatalytic tests employing sulfite (SO32–) oxidation in a KPi buffer solution at pH 7.0. While we cannot exclude optical effects, or differences in material properties on the nanoscale, we predominantly attribute this to detrimental diffusion limitations of the redox species within the internal volume of the microwire arrays, in agreement with existing literature and the observations regarding the electrodeposition of BiOI. Our results may assist in developing high-efficiency PEC devices., We discuss the effect of the Si architecture on the performance of H-BiVO4:Mo in the oxidation of sulfite to sulfate, providing indications of applicability in solar-to-fuel devices.