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8 results on '"Sidski, V. V."'

1. Enhanced ferroelectric properties of low-annealed SrBi2(Ta,Nb)2O9 thin films for NvFeRAM applications

Author

Fesenko, O. M., Yaremkevich, A. D., Tsebrienko, T. V., Bydnyk, O. P., Wang, Lei, Semchenko, A. V., Sidski, V. V., and Morozovska, A. N.

Subjects
Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics, Physics - Applied Physics
Abstract

Micro-Raman spectroscopy and X-ray diffraction have been used to explore the lattice dynamics of Nb-substituted SrBi2(Ta1-xNbx)2O9 (SBTN) crystalline thin films annealed at low temperature, 700oC. It turned out that SrBi2(Ta1-xNbx)2O9 films consist of fine-grained spherical structures for x=0.1-0.4, while the formation of rod-like grains occurs for x=0.5 due to the stress-induced transformation of the thin film perovskite structure. Moreover, it was revealed that during Nb cationic substitution Aurivillius phase formation was enhanced and become dominated in SBTN thin films and fluorite/pyrochlore phase formation was highly suppressed. We assume that these changes are conditioned by the ferrodistortion occurring in ferroic perovskites, namely by the tilting distortion of (Ta,Nb)O6 octahedra for x=0.2-0.5. The octahedral tilting distortion can change the coordination environment of the A-cite cation, as well as it lowers the SBTN symmetry due to the differences in ionic radius and mass between Ta and Nb in the B-sites, that can lead to significant changes of the SBTN crystal structure. The same nonmonotonic trends were observed for the ferroelectric perovskite phase fraction and remanent polarization on Nb content in SBTN films. The substituting Nb atoms with a concentration of 10-20 % made it possible to increase the remanent polarization in 3 times and raise the perovskite phase fraction from 66% to 87%. Therefore, obtained results can be used for the production of lead-free thin films with a high remanent polarization under low annealing temperature, being promising for advanced nonvolatile random access ferroelectric memory (NvFeRAM) applications. Keywords: ferroelectric, sol-gel method, perovskite structure, crystallization annealing, defects, remanent polarization, SBTN films, Raman spectroscopy, Landau-Devonshire approach., Comment: 26 pages, 10 figures

Published
2021

3. Sol-gel Synthesis TiO2 Nanotubes Based on ZnO Nanorods, for Use in Solar Cells

Author

Kovalenko, D. L., Dobromir, M., Vaskevich, V. V., Semchenko, A. V., Luca, D., Sidski, V. V., Tyulenkova, O. I., Kosenok, Y. A., Kacprzyk, Janusz, Series Editor, Gomide, Fernando, Advisory Editor, Kaynak, Okyay, Advisory Editor, Liu, Derong, Advisory Editor, Pedrycz, Witold, Advisory Editor, Polycarpou, Marios M., Advisory Editor, Rudas, Imre J., Advisory Editor, Wang, Jun, Advisory Editor, Khakhomov, Sergei, editor, Semchenko, Igor, editor, Demidenko, Oleg, editor, and Kovalenko, Dmitry, editor

Published
2022
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5. Photoactive Properties of Transport Sol-Gel Layers Based on Strontium Titanate for Perovskite Solar Cells

Author

Semchenko, A. V., Ayvazyan, G. Y., Malyutina-Bronskaya, V. V., Khakhomov, S. A., Kovalenko, D. L., Boiko, A. A., Sidski, V. V., Nestsiaronak, A. V., Mayevsky, A. A., Danilchenko, K. D., Zhigulin, D. V., Pilipenko, V. A., Subasri, R., Gaponenko, N. V., Semchenko, A. V., Ayvazyan, G. Y., Malyutina-Bronskaya, V. V., Khakhomov, S. A., Kovalenko, D. L., Boiko, A. A., Sidski, V. V., Nestsiaronak, A. V., Mayevsky, A. A., Danilchenko, K. D., Zhigulin, D. V., Pilipenko, V. A., Subasri, R., and Gaponenko, N. V.

Abstract

In this work, we have investigated the photocurrent and spectral sensitivity of the silicon/SrTiO3:xNb/perovskite structures. The sol–gel method carried out the deposition of undoped SrTiO3 layers as well as niobium-doped (SrTiO3:Nb) layers at atomic concentrations of 3 and 6% Nb. The perovskite layer, CH3NH3PbI3_xClx, has been deposited by the vacuum co-evaporation technique. The layers have been characterized by scanning electron microscopy and X-ray diffraction measurements. The volt–ampere characteristics and spectral sensitivity of the fabricated samples have been measured under illumination with selective wavelengths of 405, 450, 520, 660, 780, 808, 905, 980, and 1064 nm of laser diodes. We have shown that for different configurations of applied voltage between silicon, SrTiO3:xNb, and CH3NH3PbI3_xClx, the structures are photosensitive ones with a variation of photocurrent from microamperes to milliamperes depending on Nb concentration in SrTiO3, and the highest photocurrent and spectral sensitivity values are observed when a SrTiO3:Nb layer with 3 at.% of Nb is used. A possible application of the proposed structure with a SrTiO3:Nb layer for perovskite solar cells and photodetectors is being discussed.

Published
2023

6. Enhanced ferroelectric properties of low-annealed SrBi2(Ta,Nb)2O9 thin films for NvFeRAM applications.

Author

Morozovska, A. N., Fesenko, O. M., Yaremkevich, A. D., Tsebrienko, T. V., Budnyk, O. P., Wang, Lei, Semchenko, A. V., and Sidski, V. V.

Subjects
TANTALUM, THIN films, NONVOLATILE random-access memory, LEAD titanate, LATTICE dynamics, GEOCHEMISTRY, FERROELECTRIC polymers
Abstract

Micro-Raman spectroscopy and X-ray diffraction have been used to explore the lattice dynamics of Nb-substituted SrBi2(Ta1-xNbx)2O9 (SBTN) crystalline thin films annealed at low temperature, 700 °C. It turned out that SrBi2(Ta1-xNbx)2O9 films consist of fine-grained spherical structures for x = 0.1–0.4, while the formation of rod-like grains occurs for x = 0.5 due to the stress-induced transformation of the thin film perovskite structure. Moreover, it was revealed that during Nb cationic substitution Aurivillius phase formation was enhanced and became dominated in SBTN thin films and fluorite/pyrochlore phase formation was highly suppressed. We assume that these changes are conditioned by the ferrodistortion occurring in ferroic perovskites, namely by the tilting distortion of (Ta,Nb)O6 octahedra for x = 0.2–0.5. The octahedral tilting distortion can change the coordination environment of the A-cite cation, as well as it lowers the SBTN symmetry due to the differences in ionic radius and mass between Ta and Nb in the B-sites that can lead to significant changes of the SBTN crystal structure. The same nonmonotonic trends were observed for the ferroelectric perovskite phase fraction and remanent polarization on Nb content in SBTN films. The substituting Nb atoms with a concentration of 10–20% made it possible to increase the remanent polarization in 3 times and raise the perovskite phase fraction from 66 to 87%. Therefore, obtained results can be used for the production of lead-free thin films with a high remanent polarization under low annealing temperature, being promising for advanced nonvolatile random access ferroelectric memory (NvFeRAM) applications. [ABSTRACT FROM AUTHOR]

Published
2023
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8. A combined theoretical and experimental study of the phase coexistence and morphotropic boundaries in ferroelectric-antiferroelectric-antiferrodistortive multiferroics

Author

Morozovska, A. N., Karpinsky, D. V., Alikin, D. O., Abramov, A., Eliseev, E. A., Glinchuk, M. D., Yaremkevich, A. D., Fesenko, O. M., Tsebrienko, T. V., Pakalniškis, A., Kareiva, A., Silibin, M. V., Sidski, V. V., Kalinin, S. V., Kholkin, A. L., Morozovska, A. N., Karpinsky, D. V., Alikin, D. O., Abramov, A., Eliseev, E. A., Glinchuk, M. D., Yaremkevich, A. D., Fesenko, O. M., Tsebrienko, T. V., Pakalniškis, A., Kareiva, A., Silibin, M. V., Sidski, V. V., Kalinin, S. V., and Kholkin, A. L.

Abstract

The physical nature of the ferroelectric (FE), ferrielectric (FEI) and antiferroelectric (AFE) phases, their coexistence and spatial distributions underpins the functionality of antiferrodistortive (AFD) multiferroics in the vicinity of morphotropic phase transitions. Using Landau-Ginzburg-Devonshire (LGD) phenomenology and a semi-microscopic four sublattice model (FSM), we explore the behavior of different AFE, FEI, and FE long-range orderings and their coexistence at the morphotropic phase boundaries in FE-AFE-AFD multiferroics. These theoretical predictions are compared with the experimental observations for dense Bi1-yRyFeO3 ceramics, where R is Sm or La atoms with the fraction 0 ≤ y ≤ 0.25, as confirmed by the X-ray diffraction (XRD) and Piezoresponse Force Microscopy (PFM). These complementary measurements were used to study the macroscopic and nanoscopic transformation of the crystal structure with doping. The comparison of the measured and calculated AFE/FE phase fractions demonstrate that the LGD-FSM approach well describes the experimental results obtained by XRD and PFM for Bi1-yRyFeO3. Hence, this combined theoretical and experimental approach provides further insight into the origin of the morphotropic boundaries and coexisting FE and AFE states in model rare-earth doped multiferroics. © 2021

Published
2021

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