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27 results on '"Siddiqui, Shahab"'

2. Atomic Layer Deposited (ALD) SiO2 with HiK/Metal Gate Dielectric for High Voltage Analog and I/O Devices on Silicon and High Mobility Silicon Germanium (SiGe) Channels: Planar, FinFET and GAA Transistor Architecture

Author

Potter, Kelly, Salehi, Soheil, Siddiqui, Shahab, Potter, Kelly, Salehi, Soheil, and Siddiqui, Shahab

Abstract

A highly reliable SiO2 deposited by atomic layer deposition (ALD) as an I/O gate dielectric layer with high k/metal gate (HKMG) in high voltage I/O field effect transistor (FETs) for advanced CMOS technologies has been demonstrated. Improved process control, better gate oxide conformality, superior dielectric reliability (over CVD SiO2), and equivalent uniformity and reliability compared to thermal oxide proves its usefulness for FinFET, Gate-all-around(GAA), FDSOI and heterostructure Si/SiGe I/O devices. For the first-time, use of ALD SiO2 with novel interface layer results in reduced interfacial regrowth on SiGe channel, which when combined with novel post deposition nitridation and annealing for optimal performance, is an attractive I/O gate oxide option for alternate channel architectures.

Published
2024

3. Rectal cancer services – is it time for specialization within units?

Author

Maxwell‐Armstrong, Charles, primary, Cheetham, Mark, additional, Branagan, Graham, additional, Davies, Justin, additional, Davies, Mike, additional, Eardley, Nicola, additional, Hancock, Laura, additional, Harikrishnan, Athur, additional, McArthur, David, additional, Siddiqui, Shahab, additional, Tiernan, Jim, additional, and Torkington, Jared, additional

Published
2023
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5. List of Contributors

Author

Ando, Takashi, primary, Belyansky, Michael, additional, Borujeny, Elham R., additional, Cadien, Ken, additional, Cadien, Kenneth C., additional, Cai, Jin, additional, Chow, Loren A., additional, Coulson, Keith D., additional, Dennard, Robert H., additional, Gambino, Jeff, additional, Gelda, Dhruv, additional, Herner, S.B., additional, Kumar, Arvind, additional, Macleod, Angus, additional, Miao, Mengmeng, additional, Muneshwar, Triratna, additional, Nolan, Lucy, additional, Pandey, Rajan K., additional, Rajagopal, Manjunath C., additional, Schepis, Dominic, additional, Seshan, Krishna, additional, Siddiqui, Shahab, additional, Simon, Andrew H., additional, Sinha, Sanjiv, additional, and Valavala, Krishna V., additional

Published
2018
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10. Thirty years of the Association of Coloproctology of Great Britain and Ireland.

Author

Brown, Steven R., Shorthouse, Andrew J., Finan, Paul J., Branaghan, Graham, Davies, Michael, Hancock, Laura, Harikrishnan, Arthur, Kelly, Seamus, Maxwell‐Armstrong, Charles, Sagar, Peter, Siddiqui, Shahab, Tiernan, James, and Wheeler, James

Subjects
UNITED Kingdom, IRELAND
Abstract

This is a summary of the history of the Association of Coloproctology of Great Britain and Ireland from its inception in the late 1980s to the present day. [ABSTRACT FROM AUTHOR]

Published
2020
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11. Study of Lanthanum Diffusion in HfO2-Based High-k Gate Stack

Author

Zhu, Meng, primary, Kannan, Balaji, additional, Zhang, Yibin, additional, Medikonda, Manasa, additional, Liang, Yifan, additional, Li, Jinghong, additional, Dasgupta, Aritra, additional, Pantisano, Luigi, additional, Ozbek, Merve, additional, Siddiqui, Shahab, additional, and Liu, Jinping, additional

Published
2018
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15. Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices.

Author

Siddiqui, Shahab, Min Dai, Loesing, Rainer, Kaltalioglu, Erdem, Pandey, Rajan, Sathiyanarayanan, Rajesh, De, Sandip, Raghavan, Srini, and Parks, Harold

Subjects
FIELD-effect transistors, OXYGEN plasmas, NITRIDES, ANNEALING of metals, ATOMIC layer deposition, SILICA, HIGH voltages
Abstract

In this study, the authors investigate the impact of radical oxygen plasma on nitrided and annealed atomic layer deposited (ALD) SiO2 as a thick gate oxide (1.65-3 V) with a high-k/ metal gate transistor. Time-dependent-dielectric-breakdown voltage, secondary ion mass spectroscopy (SIMS), and x-ray photoelectron spectroscopy (XPS) studies were conducted, and the results are discussed for nitrided and annealed ALD SiO2 with and without radical oxygen plasma exposure. Atomistic material simulations were performed to understand the reactions between oxygen radicals and silicon oxynitride (SiON). Our key findings from SIMS and XPS show that radical oxygen plasma exposure led to a 34% nitrogen loss from the thick SiON gate oxide and damaged the gate oxide, resulting in a 1V reduction in the dielectric breakdown voltage. Atomistic material simulation results also show that atomic oxygen can react with Si-(ON)- Si to form Si-O-Si bonds and mobilize NO into the interstitial space. Similarly, when O atoms and O2 molecules are placed near N clusters, spontaneous diffusion of N2 into the interstitial space occurs. Diffusion barrier calculations further indicate a barrier energy of less than 0.5 eV in SiO2 and SiON, which can lead to the out-diffusion of NO and N2 from SiO2 and SiON. These compositional changes may result in increased leakage and a degraded breakdown voltage. The increased gate leakage and degraded breakdown voltage is attributed to the compositional changes in SiON. [ABSTRACT FROM AUTHOR]

Published
2017
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17. Production data analysis of tight hydrocarbon reservoirs

Author

Siddiqui, Shahab Kafeel. and Siddiqui, Shahab Kafeel.

Subjects
Hydrocarbon reservoirs Mathematical models., Oil wells Hydraulic fracturing., Réservoirs d'hydrocarbures Modèles mathématiques., Pétrole Puits Fracturation hydraulique., Hydrocarbon reservoirs Mathematical models., Oil wells Hydraulic fracturing.
Published
2012

18. Effect of plasma N2 and thermal NH3 nitridation in HfO2 for ultrathin equivalent oxide thickness

Author

Dai, Min, primary, Wang, Yanfeng, additional, Shepard, Joseph, additional, Liu, Jinping, additional, Brodsky, Maryjane, additional, Siddiqui, Shahab, additional, Ronsheim, Paul, additional, Ioannou, Dimitris P, additional, Reddy, Chandra, additional, Henson, William, additional, Krishnan, Siddarth, additional, Narayanan, Vijay, additional, and Chudzik, Michael P, additional

Published
2013
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23. Deposited ALD SiO2 High-k/Metal Gate Interface for High Voltage Analog and I/O Devices on Next Generation Alternative Channels and FINFET Device Structures

Author

Siddiqui, Shahab, Chowdhury, Murshed M, Brodsky, Maryjane, Rahim, Nilufa, Dai, Min, Krishnan, Siddarth, Fugardi, Steve, Wu, Ernest, Chou, Anthony, Narasimha, Shreesh, Li, Jinghong, Mcstay, Kevin, Linder, Barry, Maciejewski, Edward, Rettmann, Ryan, Mittl, Steven, Kwon, Unoh, Narayanan, Vijay, Henson, William, Schepis, Dominic, and Chudzik, Michael

Abstract

A highly reliable SiO2 deposited by atomic layer deposition (ALD) as a gate dielectric interface layer with high-k/metal gate (HKMG) in high voltage I/O field effect transistor (FETs) for advanced technologies has been demonstrated. Improved process control, better gate oxide conformality, superior dielectric reliability (over CVD SiO2), and equivalent uniformity and reliability compared to thermal oxide proves its usefulness for FinFET/ETSOI I/O devices. In addition, use of ALD SiO2 with novel interface layer results in reduced interfacial regrowth on SiGe channel, which when coupled with post deposition nitridation and annealing optimization for optimal performance, is an attractive oxide optimization option for alternate channel architectures.

Published
2013

24. Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices

Author

Siddiqui, Shahab, Dai, Min, Loesing, Rainer, Kaltalioglu, Erdem, Pandey, Rajan, Sathiyanarayanan, Rajesh, De, Sandip, Raghavan, Srini, and Parks, Harold

Abstract

In this study, the authors investigate the impact of radical oxygen plasma on nitrided and annealed atomic layer deposited (ALD) SiO2 as a thick gate oxide (1.65-3 V) with a high-k/metal gate transistor. Time-dependent-dielectric-breakdown voltage, secondary ion mass spectroscopy (SIMS), and x-ray photoelectron spectroscopy (XPS) studies were conducted, and the results are discussed for nitrided and annealed ALD SiO2 with and without radical oxygen plasma exposure. Atomistic material simulations were performed to understand the reactions between oxygen radicals and silicon oxynitride (SiON). Our key findings from SIMS and XPS show that radical oxygen plasma exposure led to a 34% nitrogen loss from the thick SiON gate oxide and damaged the gate oxide, resulting in a 1V reduction in the dielectric breakdown voltage. Atomistic material simulation results also show that atomic oxygen can react with Si-(ON)Si to form Si-O-Si bonds and mobilize NO into the interstitial space. Similarly, when O atoms and O-2 molecules are placed near N clusters, spontaneous diffusion of N-2 into the interstitial space occurs. Diffusion barrier calculations further indicate a barrier energy of less than 0.5 eV in SiO2 and SiON, which can lead to the out-diffusion of NO and N-2 from SiO2 and SiON. These compositional changes may result in increased leakage and a degraded breakdown voltage. The increased gate leakage and degraded breakdown voltage is attributed to the compositional changes in SiON. (C) 2017 American Vacuum Society.

25. Letters - Fears of Gas Shortage.

Author

Siddiqui, Shahab Ali

Subjects
*GASES, *SCARCITY, *VEGETABLE oils, *FEAR, *POWER resources
Abstract

Oil refineries might reduce their production if power plants don't lift furnace oil as it is expensive compared to the locally-produced gas and imported LNG. In the previous winter season too, oil refineries had cut production and threatened to shut down their plants following refusal by power producers to buy furnace oil. Oil industry officials say it was not feasible as furnace oil prices in the international market were lower compared with the prices of the locally-produced furnace oil. [Extracted from the article]

Published
2019

27. Deposited ALD SiO2High-k/Metal Gate Interface for High Voltage Analog and I/O Devices on Next Generation Alternative Channels and FINFET Device Structures

Author

Siddiqui, Shahab, Chowdhury, Murshed M, Brodsky, Maryjane, Rahim, Nilufa, Dai, Min, Krishnan, Siddarth, Fugardi, Steve, Wu, Ernest, Chou, Anthony, Narasimha, Shreesh, Li, Jinghong, Mcstay, Kevin, Linder, Barry, Maciejewski, Edward, Rettmann, Ryan, Mittl, Steven, Kwon, Unoh, Narayanan, Vijay, Henson, William, Schepis, Dominic, and Chudzik, Michael

Abstract

A highly reliable SiO2deposited by atomic layer deposition (ALD) as a gate dielectric interface layer with high-k/metal gate (HKMG) in high voltage I/O field effect transistor (FETs) for advanced technologies has been demonstrated. Improved process control, better gate oxide conformality, superior dielectric reliability (over CVD SiO2), and equivalent uniformity and reliability compared to thermal oxide proves its usefulness for FinFET/ETSOI I/O devices. In addition, use of ALD SiO2 with novel interface layer results in reduced interfacial regrowth on SiGe channel, which when coupled with post deposition nitridation and annealing optimization for optimal performance, is an attractive oxide optimization option for alternate channel architectures.

Published
2013
Full Text
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