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We reported on GaN microcavity (MC) lasers combined with one rigid TiO2 high-contrast grating (HCG) structure as the output mirror. The HCG structure was directly fabricated on the GaN structure without an airgap. The entire MC structure comprised a bottom dielectric distributed Bragg reflector; a GaN cavity; and a top HCG reflector, which was designed to yield high reflectance for transverse magnetic (TM)- or transverse electric (TE)-polarized light. The MC device revealed an operation threshold of approximately 0.79 MW/cm2 when pulsed optical pumping was conducted using the HCG structure at room temperature. The laser emission was TM polarized with a degree of polarization of 99.2% and had a small divergence angle of 14° (full width at half maximum). This laser operation demonstration for the GaN-based MC structure employing an HCG exhibited the advantages of HCGs in semiconductor lasers at wavelengths from green to ultraviolet.

The development of GaN-based vertical-cavity surface-emitting lasers (VCSELs) has been progressing rather fast in the past few years. Owing to the special device structures of GaN-based VCSELs, novel designs have to be incorporated in order to achieve high performance in terms of low threshold, high efficiency, stable mode profile and polarization direction. We demonstrate an easy and cost-effective way to realize index-guiding structure that significantly lowers the threshold and observe the transverse mode spectra of guiding and antiguiding VCSELs. We also realize the GaN-based VCSEL with high-contrast grating (HCG) as the top mirror and achieve polarization control over manipulation of HCG parameters.

We report a GaN-based VCSEL with a high-contrast grating (HCG) as the top mirror. The HCG consisted of TiO 2 and rested directly on the n-GaN without an airgap or the use of any DBR layers to boost the reflectivity. The full VCSEL structure was optically pumped at room temperature and showed a lasing threshold of approximately 0.99 MW/cm2 and a lasing wavelength at 369.8 nm. The demonstration of HCG GaN-based VCSEL opens up the possibility to explore all the potential benefits of HCGs in the blue and ultraviolet spectral regime.

We report a GaN-based VCSEL with a high-contrast grating (HCG) as the top mirror. The HCG consisted of TiO2 and rested directly on the n-GaN without an airgap or the use of any DBR layers to boost the reflectivity. The full VCSEL structure was optically pumped at room temperature and showed a lasing threshold of approximately 0.69MW/cm2 and a lasing wavelength at 369.1 nm. This first demonstration of lasing in a HCG GaN-based VCSEL opens up the possibility to explore all the potential benefits of HCGs in the blue and ultraviolet spectral regime.