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Garbage collection (GC) is time consuming and frequently executed all over the lifetime of solid-state drives (SSDs), which has a significant impact on system performance. Manufactures provide the copyback that directly transfers data within the same plane to accelerate data migration in GC. However, the introduction of copyback leads to two issues: 1) high detection overhead of copyback feasibility (whether data are carried out via copyback with guaranteed reliability) and 2) interplane unbalanced wear distribution. In this article, we first explore copyback error characteristics on the real NAND flash chip, then propose a fast GC scheme called FastGC . It utilizes copyback error characteristics to efficiently detect the copyback feasibility of data instead of transferring out all valid data for detecting. FastGC further utilizes a data migration leveler which aims at relieving migration overhead per GC to realize the wear leveling. Regarding data migrated via external data move (EDM), FastGC takes data coldness and erase counts of planes into consideration to even out the number of migrating data per plane and prolong the lifetime of SSDs. SSDsim, a validate simulation is used to implement FastGC and comprehensive experiments are carried out with various enterprise workloads to evaluate the system performance and the wear difference of SSDs. The experimental results in the SSDsim show the FastGC greatly promotes system performance and the wear leveling up to 46.68% and 12X, respectively, compared to the traditional copyback-based GC.

Superblocks are widely employed in SSDs for improving performance. However, the standard superblock organization which links blocks with the same block ID across planes into one superblock leads to SSDs' ineluctable lifetime waste due to inter-block wear tolerance variations. This work proposes a wear-aware superblock management, called WAS, which (1) dynamically organizes superblocks according to real-time block wear levels to make strong blocks relieve wear on weak ones, and (2) employs a wear-based garbage collection scheme to reduce inter-block wear gap. Comprehensive experiments are carried out in SSDsim. Results show that WAS greatly prolongs SSD lifetime by 51.3% compared with the state-of-the-art superblock management.

Copyback is an advanced command contributing to accelerating data migration in garbage collection (GC). Unfortunately, detecting copyback feasibility (whether copyback can be carried out with assurable reliability) against data corruption in the traditional copyback-based GC causes an expensive performance penalty. This paper first explores copyback error characteristics on real NAND flash chips, then proposes a fast garbage collection scheme called FastGC. It utilizes copyback error characteristics to efficiently detect copyback feasibility of data instead of transferring out all valid data for detecting. Experiment results in the SSDsim show the proposed FastGC greatly promotes write response time and read response time by up to 44.2% and 66.3% respectively, compared to the traditional copyback-based GC.

Wear leveling scheme has became a fundamental issue in the design of Solid State Disk (SSD) based on NAND Flash memory. Existing schemes aim to equalize the number of programming/erase (P/E) cycles and memory raw bit error rates (BER) among all the flash blocks. However, due to fabrication process variation, different blocks of the same flash chip usually have largely different endurance in terms of BER and program error rate (PER). Such conventional design cannot obtain the wear status of flash blocks precisely. This paper proposes PER-WL, an efficient PER-based wear leveling scheme that uses PER statistics as the measurement of flash block wear-out pace, and performs block data swapping to improve the wear leveling efficiency. In our evaluation with four realistic workloads, PERbased wear leveling scheme can achieve 17% and 9% variance of program error rate reduction, 8% and 3% program error rate reduction with 5% and 2% system performance degradation when compared to two state-of-the-art wear leveling schemes on average.

NAND flash memory has decreasing storage reliability, as the density or program/erase (P/E) cycle increases. To ensure data integrity, error correction codes (ECCs) are widely employed and typically stored in the out-of-band area (OOB) of flash pages. However, the worst-case oriented ECC is largely under-utilized in the early stage (small P/E cycles), and the required ECC redundancy may be too large to fit in OOB in the late stage (high P/E cycles). In this paper, we propose LAE-FTL, which employs a lifetime-adaptive ECC scheme, to improve the performance and lifetime of NAND flash memory. LAE-FTL uses weak ECCs in the early stage and strong ECCs in the late stage to guarantee the storage reliability. Since OOB is large enough to store weak ECCs in the early stage, small and size-incremental codewords are adaptively used to improve data transfer and decoding parallelism. In the late stage, strong ECCs have to be employed and the ECC redundancies become too large to be stored in OOB. Thus, LAE-FTL stores the exceeding ECC redundancies in the data space of flash pages and stores user data in a cross-page fashion. Finally, our trace-driven simulation results show that LAE-FTL improves the read performance by up to 63.42%, compared to the worst-case oriented ECC scheme in the early stage, and significantly improve the storage reliability at low cost in the late stage.

Continuous technology scaling makes NAND flash cells much denser. As a result, NAND flash is becoming more prone to various interference errors. Due to the hardware circuit design mechanisms of NAND flash, retention errors have been recognized as the most dominant errors, which affect the data reliability and flash lifetime. Furthermore, after experiencing a large number of programm/erase (P/E) cycles, flash memory would suffer a much higher error rate, rendering traditional ECC codes (typically BCH codes) insufficient to ensure data reliability. Therefore, low density parity check (LDPC) codes with stronger error correction capability are used in NAND flash-based storage devices. However, directly using LDPC codes with belief propagation (BP) decoding algorithm introduces non-trivial overhead of decoding latency and hence significantly degrades the read performance of NAND flash. It has been observed that flash retention errors show the so-called numerical-correlation characteristic (i.e., the 0–1 bits stored in the flash cell affect each other with the leakage of the charge) in each flash cell. In this paper, motivated by the observed characteristic, we propose REAL: a retention error aware LDPC decoding scheme to improve NAND flash read performance. The developed REAL scheme incorporates the numerical-correlation characteristic of retention errors into the process of LDPC decoding, and leverages the characteristic as additional bits decision information to improve its error correction capabilities and decrease the decoding latency. Our simulation results show that the proposed REAL scheme can reduce the LDPC decoding latency by 26.44% and 33.05%, compared with the Logarithm Domain Min-Sum (LD-MS) and Probability Domain BP (PD-BP) schemes, respectively.