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3 results on '"Shun-Lung Yen"'

1. Real-time Thermographic Methodology with High-accuracy Temperature Monitoring Applied to Stacked Package of High-power Semiconductor Laser Diode

Author

Shiang-Feng Tang, Tzu-Chiang Chen, Chung-Wei Ou, Hsin-Yen Cheng, Shun-Lung Yen, Chin-Jung Chao, and Ing-Jiunn Su

Subjects
Temperature monitoring, Semiconductor, Materials science, Laser diode, business.industry, law, Optoelectronics, General Materials Science, business, Instrumentation, Power (physics), law.invention
Published
2019
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2. Real-time Thermographic Methodology with High-accuracy Temperature Monitoring Applied to Stacked Package of High-power Semiconductor Laser Diode.

Author

Shun-Lung Yen, Shiang-Feng Tang, Chung-Wei Ou, Chin-Jung Chao, Hsin-Yen Cheng, Ing-Jiunn Su, and Tzu-Chiang Chen

Subjects
SEMICONDUCTOR diodes, PYROMETRY, SEMICONDUCTOR lasers, TEMPERATURE measurements, SOFTWARE measurement, FOCAL plane arrays sensors
Abstract

To improve the accuracy of temperature measurement using a commercial thermal imager, the proposed correction methodology for the regression coefficients R, B, F, and O is applied, and the accuracy reaches <±1 °C in the temperature measurement range between 15 and 100 °C. The use of digital images with a Giga-Ethernet output interface for the development of temperature measurement and analysis software is the strategy of real-time temperature measurement and fast monitoring of the temperature of the target area. It will become a costeffective room-temperature thermal imager with high accuracy of temperature measurement suitable for microzone application. The use of a thermal camera for the temperature observation of a microzone on a high-power striped laser diode (LD) is advantageous in the evaluation of the heat dissipation of a submount stage to improve the output efficiency of the laser. [ABSTRACT FROM AUTHOR]

Published
2019
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3. High temperature stable n-i-n resonant tunneling diode embedded InAs quantum dots in GaAs/Al/sub x/Ga/1-x/As double barriers

Author

null Shiang-Feng Tang, null Cheng Der Chiang, null Jiunn-Jye Luo, null Tzu-Chiang Chen, and null Shun-Lung Yen

Subjects
Materials science, Condensed matter physics, Organic chemicals, business.industry, Resonant-tunneling diode, Electron, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Gallium arsenide, chemistry.chemical_compound, chemistry, Semiconductor quantum dots, Materials science and technology, Quantum dot, Optoelectronics, business, Quantum tunnelling
Abstract

The quantum dot (QD) resonant tunneling diode (RTD) with Al/sub x/Ga/sub 1-x/As double-barriers has been investigated under operating large temperature ranges. A superior temperature-stability of peak-to-valley current ratio (PVR) is demonstrated. The electrons of resonant tunneling transport via nm-scale InAs quantum dots buried in GaAs spacer layers bounded by a pair of very thin Al/sub 0.3/Ga/sub 0.7/As barriers.

Published
2005
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