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Objective The purpose of this multicenter retrospective study was to investigate the impact of the prognostic nutritional index (PNI) on the survival of Japanese patients with hepatocellular carcinoma (HCC) treated with sorafenib. Methods A total of 178 HCC patients from May 2009 to December 2015 at our affiliated hospitals was included in this study. The PNI was calculated as follows: 10×serum albumin (g/dL) +0.005×total lymphocyte count (per mm3). The patients were divided into two groups according to the cut-off value of the PNI and as calculated by a receiver operating characteristic curve analysis. Results The optimum cut-off value of the PNI was set at 46.8. We defined the 33 patients with a PNI≥46.8 as the PNI-high group and the 145 patients with a PNI

Aim: The aim of this retrospective study was to investigate the efficacy and safety of ramucirumab treatment under real-world conditions and to clarify the role of albumin-bilirubin (ALBI) score in predicting outcomes. Methods: Between June 2019 and May 2020, a total of 16 patients with advanced hepatocellular carcinoma (HCC) treated with ramucirumab in Gunma Saiseikai Maebashi Hospital and its affiliated hospitals was included. Results: The median age was 71 (interquartile range [IQR] 65–74) years old, and 12 patients (75.0%) were male. The modified ALBI (mALBI) grade was 1, 2a, and 2b at baseline in 4 (25.0%), 3 (18.8%), and 9 patients (56.3%), respectively. The Barcelona Clinic Liver Cancer stage was intermediate and advanced stage in 1 (6.3%) and 15 patients (93.8%), respectively. The serum α-fetoprotein at baseline was 4,911 (IQR 2,091–17,377) ng/mL. The disease control rate in patients with mALBI grade1 + 2a was significantly higher than in those with mALBI grade 2b (100 vs. 28.6%, p = 0.028). The patients with mALBI grade 1 + 2a had a significantly better overall survival (OS) and longer progression-free survival (PFS) than those with mALBI grade 2b (median OS 6.7 vs. 3.0 months; p = 0.036, median PFS 7.5 vs. 1.4 months; p = 0.002). The number of cycles of ramucirumab treatment was significantly correlated with the ALBI score (r = −0.452, p = 0.030). The patients with mALBI grade 1 + 2a showed a low incidence of adverse events (AEs) and discontinuation due to AEs. Conclusions: Advanced HCC patients with mALBI grade 1 + 2a may be a good indication for ramucirumab treatment.

Background: Daclatasvir/asunaprevir/beclabuvir (DCV/ASV/BCV) combination therapy had been available for the treatment of chronic hepatitis C patients with genotype 1 (CHG1) in Japan. Our aim was to report the efficacy and safety of DCV/ASV/BCV in patients experiencing treatment failure with interferon (IFN)-free direct-acting antiviral agent (DAA)-based therapies, which have not been fully evaluated. Methods: We evaluated the efficacy and safety of 12-week DCV/ASV/BCV combination therapy for CHG1 patients experiencing failure of DCV/ASV and/or sofosbuvir/ledipasvir (SOF/LDV). Results: Nine patients were eligible for inclusion in this study. The previous IFN-free DAA-based therapies included DCV/ASV (n=7). SOF/LDV (n=1) and both DCV/ASV and SOF/LDV (n=1). The sustained virologic response at post-treatment week (PTW) 24 (SVR24) rate was 33.3% (3/9) and an SVR24 was obtained in patients who previously received DCV/ASV. Notably, virologic relapse occurred at PTW16 or 18 in 2 patients. “D168E or D168H in addition to Y93H”, “presumed L31 deletion (L31del) and/or P32del”, and “P29del” might contribute to the resistance to DCV/ASV/BCV combination therapy. One patient developed Grade 3 liver dysfunction but treatment could be completed with dose modification. Conclusions: The efficacy of DCV/ASV/BCV combination therapy in patients who experienced treatment failure with IFN-free DAA-based combination regimens was unsatisfactory, although the therapy was relatively well-tolerated. As virologic relapse occurred after PTW 12 in two cases, an SVR24 might be more suitable for judging viral eradication than an SVR12. The role of resistance-associated substitutions in patients who experience treatment failure with DCV/ASV/BCV combination therapy should be further evaluated.

The total performance of low-k/Cu interconnects featuring short turnaround-time (TAT) silylated scalable porous silica (Po-SiO, k = 2.1) with high porosity (50%) is demonstrated. The TAT for the film formation process including silylation treatment is about 25% reduced by adding a promoter, causing reinforcement of the film. Applying this improved Po-SiO, a 140-nm-pitch dual-damascene structure is successfully achieved. The wiring capacitance showed 10% reduction, compared to the conventional porous SiOC (ULK, k = 2.65). Sufficient interconnect reliability and packaging characteristics for the circuit-under-pad structure are also obtained. The predicted circuit performance was 8% higher than ULK in the 32-nm node.

Li-ion batteries have attracted interest for use as storage batteries. However, the risk of fire has not yet been resolved. Although solid Li-ion batteries are possible alternatives, their performance characteristics are unsatisfactory. Recently, research on utilizing the accumulation of carriers at the trap levels of semiconductors has been performed. However, the detailed charge/discharge characteristics and principles have not been reported. In this report, we attempted to form new n-type oxide semiconductor/insulator/p-type oxide semiconductor structures. The battery characteristics of these structures were evaluated by charge/discharge measurements. The obtained results clearly indicated the characteristics of rechargeable batteries. Furthermore, the fabricated structure accumulated an approximately 5000 times larger number of carriers than a parallel plate capacitor. Additionally, by constructing circuit models based on the experimental results, the charge/discharge mechanisms were considered. This is the first detailed experimental report on a rechargeable battery that operates without the double injection of ions and electrons.

A low oxygen content (LOC) CuAl alloy with no barrier metal (Ta) oxidation was obtained using an oxygen absorption process based on metallurgical thermodynamic principles. LOC CuAl dual damascene interconnects (DDIs) were successfully implemented into 45-nm-node LSIs with 140-nm-pitched lines and 70-nm-diameter (phi) vias. An oxygen absorber of very thin Al film, which was deposited on an electrochemically deposited (ECD) Cu film, captured the oxygen atoms in the ECD Cu due to its larger negative change in the standard Gibbs-free energy of oxidation than in the Cu and the barrier (Ta), preventing the Ta barrier from oxidizing during high-temperature annealing. The high-quality Cu/barrier interface in the LOC CuAl DDIs remarkably improved the via reliability against stress-induced voiding and electromigration. No reliability degradation of the 70-nm-phi vias was observed in the 45-nm-node LOC CuAl DDIs, while keeping the scalability from the 65-nm-node generation.

High performance Cu dual-damascene (DD) interconnects without process-induced damages are developed in porous SiOCH stacks with the effective dielectric constant (keff) of 2.95, in which a carbon (C)-rich molecular-pore-stacking (MPS) SiOCH film (k = 2.5) is stacked directly on an oxygen (O)-rich porous SiOCH (k = 2.7) film. The novel etch-stopperless structure is obtained by comprehensive chemistry design of C/O ratios in the SiOCH stack and the etching plasma of an Ar/N2 /CF4 /O2 gas mixture technique. Large hydrocarbons attached to hexagonal silica backbones in the MPS-SiOCH prevent the Si-CHx bonds from oxidation during O2-plasma ashing, suppressing the C-de- pleted damage area at the DD sidewall. Combining multiresist mask process with immersion ArF photolithography, strictly controlled Cu DD interconnects with 180-nm pitched lines and 65-nm-diameter vias are obtained successfully, ready for the 300-mm fabrication.

The feasibility of etching Cu/low-k interconnects by using a low global warming potential CF3I plasma was studied. Low-damage etching was done and porous SiOC (p-SiOC, k

鋼管内にコンクリートを充填し，鉄塔脚を模した鋼管あるいは山形材に支圧板を取り付けた脚材をその中に埋め込んだ定着方式の引抜載荷試験を実施した．試験体のパラメータは定着長，鋼管径，鋼管厚，コンクリート強度等とした．その結果，鋼管が薄いと鋼管が周方向に降伏することによって，脚材が抜け出す破壊モードであった．鋼管が厚いと支圧板の先端を結んだコンクリートに破壊面が生じて脚材が抜け出す破壊モードであった．模型実験で確認した2種類の破壊モードを考慮した耐力算定式を提案し，実験と比較した結果，精度の高さが確認された．

Service chaining is an emerging architecture from the trend of Software Defined Networking and Network Functions Virtualization. This architecture is expected to improve network flexibility and reduce equipment and operational costs. However, recent approaches for service chaining require new networking technologies that need to be standardized, implemented and developed. In this paper, we present and demonstrate a scalable and deployable service chaining architecture, called FlowFall. FlowFall does not require any novel technologies, only requires OpenFlow and current Virtual Machines as Virtual Network Function. Moreover, we focus on the NFV backbone network and how to achieve scale-out its performance. We describe the approach of FlowFall and an evaluation in which our method achieves 10-gigabit wire-rate throughput with 128-byte packets on a single Hyper Visor and scale-out performance among multiple Hyper Visors. Finally, we demonstrate a proof-of-concept of FlowFall in an actual service network at Interop Tokyo 2015 ShowNet.

A 63-year-old woman with abdominal pain was referred to our hospital. Her pancreatic enzymes were elevated, and an abdominal computed tomography (CT) scan showed an enlarged pancreas, consistent with pancreatitis, and gas collection containing an impacted stone adjacent to Vater's papilla. This finding raised the suspicion of a duodenal diverticulum. A subsequent ERCP showed a juxtapapillary duodenal diverticulum (JPDD) filled with calculi and pus. The pancreatitis improved with 2 weeks of conservative treatment. Subsequently, the patient underwent resection of the uterus and bilateral adnexa to remove a large ovarian cyst that was also identified on the admission CT scan. On the third postoperative day, she developed abdominal pain and vomiting. CT revealed small bowel obstruction caused by an enterolith expelled from JPDD. Enterotomy was performed to remove the stone. To our knowledge, only three similar cases have been previously reported in Japan.

Ventricular fibrillation (VF) is most frequent in the very early phase in acute coronary occlusion, and is triggered by the re-entrant mechanism in this phase. An inhomogeneous conduction in the ischemic myocardium would be substrates for re-entry. The aim of this study was to examine the relationship between the severity of irregularities of the QRS complex and VF. Eleven pigs were analyzed, and the heart was fixed in the pericardial cradle. Ag-AgCI bipolar electrodes were fixed on the epicardium in ischemic and non-ischemic regions. The proximal portion of the left anterior descending coronary artery was occluded for one hour. Electrocardiograms (ECGs) were continuously recorded on a magnetic tape, and wavelet analysis was performed on signal-averaged ECG (25 beats) every 60 sec after the experiment. The number of local maxima (N) and the duration between the first and the last local maximum (D) were automatically measured. Nand D significantly increased in the ischemic area, but not in the non-ischemic area. Nand D increased approximately twofold just before the occurrence of VF in 8 fibrillated pigs (p < 0.01, each). There were significant positive linear relationships between the rate of increase in Nand D to VF and basal heart rate before coronary occlusion (r = 0.90, P < 0.01 in N, r = 0.84, P < 0.01 in D at 160 Hz). These results suggest that there would be a threshold inhomogeneous conduction for the occurrence of VF and an increase in heart rate would accelerate the inhomogeneous conduction in acute myocardial ischemia.

Low-damage hard-mask (HM) plasma-etching technology for porous SiOCH film (k=2.6) has been developed for robust 65-nm-node Cu dual damascene interconnects (DDIs). No damage is introduced by fluorocarbon plasma etching irrespective of whether rigid (k=2.9) or porous (k=2.6) SiOCH films are used, due to the protective CF-polymer layer deposited on the etched sidewall. The etching selectivity of the SiOCH films to the inorganic HMs is kept high by controlling the radical ratio of carbon relative to oxygen in the etching plasma gas. However, oxidation damage penetrates the films from the sidewalls due to the O2 plasma used for photoresist ashing. This damage is increased by the porous structure. As a result, we developed a via-first multi-hard-mask process for the DD structure in porous SiOCH film with no exposure to O 2-ashing plasma, and we controlled the via-taper angle by RF bias during etching. We fabricated robust Cu DDIs with tapered vias in porous SiOCH film that can be applied to 65-nm-node ULSIs and beyond

Robust porous low-k/Cu interconnects have been developed for 65-nm-node ultralarge-scale integrations (ULSIs) with 180-nm/200-nm pitched lines and 100-nm diameter vias in a single damascene architecture. A porous plasma-enhanced chemical vapor deposition (PECVD)-SiOCH film (k=2.6) with subnanometer pores is introduced into the intermetal dielectrics on the interlayer dielectrics of a rigid PECVD-SiOCH film (k=2.9). This porous-on-rigid hybrid SiOCH structure achieves a 35% reduction in interline capacitance per grid in the 65-nm-node interconnect compared to that in a 90-nm-node interconnect with a fully rigid SiOCH. A via resistance of 9.7 /spl Omega/ was obtained in 100-nm diameter vias. Interconnect reliability, such as electromigration, and stress-induced voiding were retained with interface modification technologies. One of the key breakthroughs was a special liner technique to maintain dielectric reliability between the narrow-pitched lines. The porous surface on the trench-etched sidewall was covered with an ultrathin plasma-polymerized benzocyclobuten liner (k=2.7), thus enhancing interline time-dependent dielectric breakdown reliability. The introduction of a porous material and the control of the sidewall are essential for 65-nm-node and beyond scaled-down ULSIs to ensure high levels of reliability.

The plasma-etching technology presented in this paper is for fabricating highly reliable Cu dual damascene interconnects (DDI) with organic low-k film through modification of the in situ etched surface during low-k etching. Nitrogen-based plasma with oxygen and high-molecular-weight fluorocarbon gas (C>2) chemically modifies the sidewall surface of the etched low-k film, changing it into the carbon nitride with fluorocarbon-polymer passivation from the etching gas. After wet cleaning, the fluorocarbon-polymer is removed selectively, leaving a carbon nitride modified layer (CNL) on the sidewall. The CNL has been found to suppress Cu diffusion into the low-k film. A stacked barrier structure of conventional barrier metal and CNL is expected to have high tolerance to Cu diffusion. Combining a dual-hard-mask etching sequence with the CNL modification, Cu DDIs with organic low-k film were fabricated with high yield.

In the manufacture of thin-film transistor liquid-crystal displays (TFT-LCDs), a major goal is to scale up the production of liquid-crystal panels and lower their production costs. For that reason, we have developed a large-area high-density (3.58 × 1011 cm−3) surface-wave plasma source based on a slot antenna. This source is designed to reduce the number of separate production steps in semiconductor processing, thereby increasing the throughput of large-area TFT-LCD substrates. We are convinced that the use of this plasma source will not only increase the etching rate, but also reduce the need for industry-standard photoresist liftoff processes by enabling an uninterrupted transition after etching to photoresist liftoff (ashing). We found that the etching rate for a 400 × 500 mm2 polysilicon layer on a glass substrate was 58 nm/min with a uniformity of ±6.8% when our source was used. Furthermore, when ashing was carried out in the same chamber immediately after etching, the ashing rate was 1430 nm/min with a uniformity of ±9.3%. We also found that the selectivity ratio for resist versus polysilicon and the SiO2 in an underlayer was higher than 140. This implies that our process outperforms the standard resist liftoff process; indeed, we have realized a high-uniformity etching process with twice the etching rate of standard methods. In addition, we have made progress toward realizing an ashing process, which is almost ready for practical use. These two processes can be combined into a single integrated etching–ashing process that will reduce the need for a separate liftoff procedure and simplify processing. © 2004 Wiley Periodicals, Inc. Electron Comm Jpn Pt 2, 87(6): 28–38, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecjb.10086

送電用鉄塔基礎の4本杭支持床板および直接支持床板においていかり材方式で鋼管を定着する際の押抜きせん断耐力算定式について検討することが本論文の目的である. 検討に際して, まず, 4本杭支持床板について, 押抜きせん断破壊試験を実施し, 簡易な押抜きせん断耐力式を検討した. 次にこれらの実験から典型的な1試験体を選んで静的3次元弾塑性FEMであるCOM3を用いた数値シミュレーション解析を行い, 押抜きせん断耐力を精度良く算定可能なことを確認した. 最後に, 直接基礎の押抜きせん断耐力を, 数値解析を通じて検討した.

We investigated the diagnostic and prognostic value of p53 expression and proliferative activity, as indicated by the Ki-67, in endoscopic biopsy specimens. Specimens were immunologically stained with p53 and MIB-1 (Ki-67), and the MIB-1/Ki-67 labeling index (LI) was calculated. Classification of adenomas was based on findings of H&E-stained preparations into those with low- or high-grade atypia. Well-differentiated tubular and papillary adenocarcinomas were classified as carcinomas with low- or high-grade atypia. There were significant differences among the control and adenoma patients in MIB-1/Ki-67 LI (P < 0.05). No significant difference was identified between adenomas with high grade atypia and carcinomas with low grade atypia. The p53 expression was negative in all adenomas, but it was positive in 68.2% of carcinomas. The current study demonstrated that p53 protein expression in endoscopic biopsy specimens was of preoperative diagnostic value for carcinoma of the ampulla of Vater. The p53 protein positive tumors had a relatively higher malignant potential than p53 protein negative ones. The MIB-1/Ki-67 LI was useful in differentiating non-tumorous lesions from adenomas and adenomas with low- or high-grade atypia. The MIB-1/Ki-67 LI had a prognostic value because clinicopathological factors of carcinoma of ampulla of Vater correlated with MIB-1/Ki-67 LI.

送電用鉄塔基礎の新しい基礎形式としての1本杭支持床板にいかり材で脚材を定着する方式において, 引抜き力が作用した際の破壊耐力について検討することが本論文の目的である. この定着方式には, 割裂応力による上端主鉄筋の降伏を伴う破壊と, コーン状のせん断破壊の2つの主要な破壊形式がある. そこで, これら2つの破壊形式について耐力算定式を検討した.

【背景と目的】肝細胞癌における性別の臨床疫学的特徴を明らかにするため過去10年間に診断された263例について検討した, 【方法】発症年齢, 飲酒歴, 肝炎ウイルス, 臨床病期, 腫瘍数 最大腫瘍径, 門脈侵襲の程度, 肉眼的進行程度, 予後について性別による差があるか統計学的に検討した.【結果】内訳は男性189例, 女性74例で, 年度別でも男性 (18.9人/年) が有意に女性 (7.4/年) より多く, 発症年齢 (62.9 : 66.9歳) も若かった.この差はHCV陽性者においても有意であった.男性では飲酒率, HBV陽性率, 進行度が女性と較べ高く, 腫瘍数 門脈侵襲も有意に多かった.肝予備能には差はなく, 予後については男性に早期死亡が多い傾向がみられたが早期に発見され肝切除された症例では差はなかった.【結論】肝細胞癌では男性が女性の約25倍多く, その背景には複数の因子が癌発生から進展に至るまで影響を及ぼしており, 今後肝癌に対しては性差を考慮した診療が必要と考えられる.

Reactive oxygen species are involved in the mitogenic signal transduction cascades initiated by several growth factors and play a critical role in mediating cardiovascular diseases. Interestingly, H(2)O(2) induces tyrosine phosphorylation and trans-activation of the platelet-derived growth factor receptor and the epidermal growth factor receptor in many cell lines including vascular smooth muscle cells. To investigate the molecular mechanism by which reactive oxygen species contribute to vascular diseases, we have examined a signal transduction cascade involved in H(2)O(2)-induced platelet-derived growth factor receptor activation in vascular smooth muscle cells. We found that H(2)O(2) induced a ligand-independent phosphorylation of the platelet-derived growth factor-beta receptor at Tyr(1021), a phospholipase C-gamma binding site, involving the requirement of protein kinase C-delta and c-Src that is distinct from a ligand-dependent autophosphorylation. Also, H(2)O(2) induced the association of protein kinase C-delta with the platelet-derived growth factor-beta receptor and c-Src in vascular smooth muscle cells. These findings will provide new mechanistic insights by which enhanced reactive oxygen species production in vascular smooth muscle cells induces unique alleys of signal transduction distinct from those induced by endogenous ligands leading to an abnormal vascular remodeling process.

In vascular smooth muscle cells (VSMCs), angiotensin II (AngII) induces transactivation of the EGF receptor (EGFR) which involves a metalloprotease that stimulates processing of heparin-binding EGF from its precursor. However, the identity and pharmacological sensitivity of the metalloprotease remain unclear. Here, we screened the effects of several metalloprotease inhibitors on AngII-induced EGFR transactivation in VSMCs. We found that an N-phenylsulfonyl-hydroxamic acid derivative {2R-[(4-biphenylsulfonyl)amino]-N-hydroxy-3-phenylpropinamide} (BiPS), previously known as matrix metalloprotease (MMP)-2/9 inhibitor, markedly inhibited AngII-induced EGFR transactivation, whereas the MMP-2 or -9 inhibition by other MMP inhibitors failed to block the transactivation. BiPS markedly inhibited AngII-induced ERK activation and protein synthesis without affecting AngII-induced intracellular Ca2+ elevation. VSMC migration induced by AngII was also inhibited not only by an EGFR inhibitor but also by BiPS. Thus, BiPS is a specific candidate to block AngII-induced EGFR transactivation and subsequent growth and migration of VSMCs, suggesting its potency to prevent vascular remodeling.

Angiotensin II activates three major mitogen-activated protein kinases (MAPK) in vascular smooth muscle cells. Although other angiotensin II-induced MAPKs activation require transactivation of a growth factor receptor, the detailed mechanism by which angiotensin II activates c-Jun NH2-terminal kinase (JNK) remains unclear. Here, an immunosuppressant, cyclosporin A but not FK506, selectively inhibited angiotensin II-induced JNK activation in vascular smooth muscle cells. However, cyclosporin A had no inhibitory effect on angiotensin II-induced protein synthesis. Thus, angiotensin II-induced JNK activation but not protein synthesis is mediated by a mechanism sensitive to cyclosporin A, which is independent from calcineurin in vascular smooth muscle cells.

The role of N2 gas addition in the reactive ion etching (RIE) processes for aluminum wiring and polysilicon gate fabrication was investigated. With an increase in the amount of N2 gas added to the etching gas, the pattern profile changed from a reverse to an ordinary taper and the pattern width increased. By AES analysis, nitrogen was detected in the pattern sidewall passivation layer when N2 gas was added. Optical emission spectroscopy of the plasma revealed that hydrogen was supplied from the decomposition product of the photoresist in RIE of aluminum with BCl3/Cl2. XPS, FT-IR and TDS analyses were carried out to study the structure of the passivation layer. Consequently, it was confirmed that nitrogen combined with hydrogen to form N–H bonds in NH4+, and that NH4+ coupled with Cl-, AlCl4- and SiF62- during aluminum and polysilicon RIE, respectively. It was also found that ammonium salts were deposited on the pattern sidewall, and played a major role in controlling the etching profile and pattern width.

In vascular smooth muscle cells, angiotensin II (AngII) stimulates association of its G protein-coupled AngII type 1 (AT(1)) receptor with Janus kinase 2 (JAK2), resulting in the activation of signal transducer and activator of transcription proteins. Although the association and activation of subsequent signal transducer and activator of transcription proteins appear to prerequire JAK2 activation, the signaling mechanism by which the AT(1) receptor activates JAK2 remains uncertain. Here, we have examined the signaling mechanism required for JAK2 activation by AngII in vascular smooth muscle cells. We found that AngII, through the AT(1) receptor, rapidly stimulated JAK2 phosphorylation at Tyr(1007/1008), the critical sites for the kinase activation. By using selective agonists and inhibitors, we demonstrated that PLC and its derived signaling molecules, phosphatidylinositol triphosphate/Ca(2+) and diacylglycerol/PKC, were essential for AngII-induced JAK2 phosphorylation. The PKC isoform required for JAK2 activation appears to be PKCdelta since a selective PKCdelta but not PKCalpha/beta inhibitor and dominant-negative PKCdelta overexpression inhibited JAK2 activation. We further examined a link between JAK2 and a Ca(2+)/PKC-sensitive tyrosine kinase, PYK2. We found that PYK2 activation by AngII requires PKCdelta, and that PYK2 associates with JAK2 constitutively. Moreover, transfection of two distinct PYK2 dominant-negative mutants markedly inhibited AngII-induced JAK2 activation. From these data we conclude that AT(1)-derived signaling molecules, specifically Ca(2+) and PKCdelta, participate in AngII-induced JAK2 activation through PYK2. These data provide a new mechanistic insight by which the hormone AngII exerts its cytokine-like actions in mediating vascular remodeling.

A 13-year-old boy was brought to our hospital after recovering from ventricular fibrillation that occurred after an episode of chest pain during training with his soccer team. Subsequent 64-slice multidetector computed tomography revealed the left coronary artery arising from the right sinus of Valsalva, which coursed between the ascending aorta and root of the main pulmonary artery. Surgical correction including unroofing of the left coronary ostium and pulmonary artery translocation was performed successfully. One year later, he remained asymptomatic and was back on his soccer team.

Apoptosis of cardiac myocytes is one of the causes of heart failure. Here we examine the mechanism by which the activation of beta-adrenergic receptor induces cardiomyocyte apoptosis. Terminal deoxynucleotide transferase-mediated dUTP nick end labeling and DNA ladder analyses revealed that isoproterenol (Iso) induced the apoptosis of cardiac myocytes of neonatal rats through an increase in intracellular Ca(2+) levels. The Iso-induced cardiomyocyte apoptosis was strongly inhibited by the L-type Ca(2+) channel antagonist nifedipine and by the calcineurin inhibitors cyclosporin A and FK506. Iso reduced the phosphorylation levels of the proapoptotic Bcl-2 family protein Bad and induced cytochrome c release from mitochondria to the cytosol through calcineurin activation. Infusion of Iso increased calcineurin activity by approximately 3-fold in the hearts of wild-type mice but not in the hearts of transgenic mice that overexpress dominant negative mutants of calcineurin. Terminal deoxynucleotide transferase-mediated dUTP nick end labeling analysis revealed that infusion of Iso induced apoptosis of cardiac myocytes and that the number of apoptotic cardiomyocytes was significantly less in the hearts of the transgenic mice compared with the wild-type mice. These results suggest that calcineurin plays a critical role in Iso-induced apoptosis of cardiac myocytes, possibly through dephosphorylating Bad.

山岳地の送電用鉄塔は, 深礎基礎を多く適用している. 従来, 送電用鉄塔の脚材定着は, 支圧板と呼ばれるリング状プレートを節状に取り付ける方法を用いていた. 脚材定着法の統一化を考え, 本研究ではアンカーを取り付けた定着法の適用性について検討した. 模型実験を行い, 破壊モードは割裂破壊であることを確認し, 既往の支圧板定着での耐力算定式の適合性を検討した. その結果, アンカーからコンクリートに伝達される力の方向が形状によって異なり, この方向が耐力に影響を及ぼしていると考えて結論づけ, 支点反力モデルを提案した. 本モデルを導入した耐力算定式により求めた計算値は, 実験値との良い整合を見せた. さらに, 数値解析を行って本モデルを検証し, 妥当性を明らかにした.

We studied a method for increasing the etching rate of SiN films in downflow plasma. It was confirmed that the etching rate of SiN films deposited by plasma‐enhanced chemical vapor deposition (PE‐CVD) was 50‐200 times higher than that of the films deposited by low‐pressure chemical vapor deposition (LP‐CVD). The activation energy for PE‐CVD SiN (PE‐SiN) was 0.62 kcal/mol and that for LP‐CVD SiN (LP‐SiN) was large, 5.3 kcal/mol, indicating that different etching reactions occurred. Assuming that the difference is caused by the many H atoms contained in PE‐SiN, we compared the etching rates by adding gaseous , water, and methanol, which include H atoms, to . The results show that the etching rate increased by a maximum factor of 10 for LP‐SiN and approximately a factor of 1.5 times for PE‐SiN. From these results, we propose the following etching mechanism for the enhancement in the etching rate. Hydrogen added to reacts with N atoms on the SiN films to form , which is then removed as a volatile component. With the removal of these N atoms, the SiN surface becomes Si rich; therefore, the etching reaction of Si atoms and the F radicals is accelerated, thereby increasing the etching rate. © 1999 The Electrochemical Society. All rights reserved.

山岳地の送電用鉄塔基礎には深礎基礎が多く用いられている. 送電用鉄塔基礎は一般の土木構造物と異なり引抜き荷重が作用する特徴を有している. 鉄塔脚の深礎基礎への定着手法は, 支圧板と呼ぶリング状プレートを節状に取り付けた鉄塔脚材を埋め込むもので, 既往の引抜き模型実験の結果, 脚材を中心とした放射状の割裂破壊を起こすことがわかっている. 本研究は, 破壊力学に基づきコンクリートの引張軟化特性を用いてひび割れの進展を考慮することにより, 軸対称擬似3次元解析を用いて模型実験結果のシミュレーションを行い, 実験的検討から求めた脚材定着耐力算定式との比較より, 提案した数値解析手法の妥当性を評価したものである.

We have investigated a new method of Si selective epitaxial growth (SEG). This is a Cl 2 pulsed molecular flow method in which a Si substrate is alternately irradiated with Si 2 H 6 and Cl 2 in an ultra-high vacuum chemical vapor deposition (UHV-CVD) chamber. The result of the Si etching by Cl 2 reveals that the Cl 2 irradiation has no influence on the Si epitaxial layers at temperatures low enough that the faceting plane does not develop. On the other hand. the Cl 2 irradiation has a large effect on selectivity improvement, when the Si 2 H 6 irradiation is arranged in short periods. This method has realized the selective growth almost indefinitely by the reduction of the Si 2 H 6 irradiation period even at the low temperature. This suggests that for selectivity improvement it is very important that the individual adsorbed Si atoms be removed by Cl 2 in the initial stage of the Si 2 H 6 irradiation because Si atoms cannot be removed at low temperature after they form silicon clusters. We have demonstrated the use of this method in forming a Si-based photodetector and showed that a trench about 2 μm deep can be filled with selective epitaxial layers having small faceting planes.

To determine whether angiotensin (ANG) II, a vasoconstrictor hormone, activates constitutive nitric oxide synthase (cNOS) in endothelial cells (ECs), we investigated the cellular mechanism by which ANG II induces nitric oxide (NO) formation in cultured bovine ECs. ANG II rapidly (within 1 min) and dose-dependently (10(-9)-10(-6) M) increased nitrate/nitrite (NOx) production. This effect of ANG II was abolished by a NOS inhibitor, NG-monomethyl-L-arginine. An ANG II type 1 (AT1) receptor antagonist (DuP 753), but not an ANG II type 2 (AT2) receptor antagonist (PD 123177), dose-dependently inhibited ANG II-induced NOx production. A Ca(2+)-channel blocker (barnidipine) failed to affect ANG II-induced NOx production, whereas an intracellular Ca2+ chelator (BAPTA) and a calmodulin inhibitor (W-7) abolished NOx production induced by ANG II. A protein kinase C (PKC) inhibitor (H-7) and down-regulation of endogenous PKC after pretreatment with phorbol ester decreased NOx production stimulated by ANG II. ANG II transiently stimulated inositol 1,4,5-trisphosphate (IP3) formation, and increased cytosolic free Ca2+ concentrations; these effects were blocked by DuP 753. Our data demonstrate that ANG II stimulates NO release by activation of Ca2+/calmodulin-dependent cNOS via AT1 receptors in bovine ECs.

Endoscopic hemostasis is a useful treatment modality for gastric ulcer bleeding. However, it is sometimes difficult to achieve hemostasis in cases with arterial bleeding, especially those complicated with vascular abnormalities. We describe a case with gastric ulcer bleeding from a variant left gastric artery accompanied by congenital absence of the splenic artery. A 50-year-old female was admitted to our hospital with dizziness and tarry stools. Upper gastrointestinal endoscopy revealed bleeding from a gastric ulcer, and endoscopic hemostasis by endoscopic clipping was carried out. Computed tomography and abdominal angiography revealed the variant left gastric artery running below the gastric ulcer. In spite of endoscopic hemostasis and medication, re-bleeding from the gastric ulcer occurred. A transcatheter coil embolization for the variant left gastric artery was performed and successfully achieved hemostasis. This case was accompanied by congenital absence of the splenic artery, which is an extremely rare condition. We herein describe this rare case and review previously reported cases.

To investigate whether biotinidase deficiency may occur in liver disease, we determined biotinidase activity, biotin levels, and organic acids in patients with liver disease. Serum biotinidase activity in patients with liver disease (2.63 +/- 1.40 nmol/min/ml) was significantly lower than in the control group (5.43 +/- 1.06 nmol/min/ml). Serum biotinidase activity in decompensated liver cirrhosis (LC) and hepatoma was significantly lower than in acute viral hepatitis (AVH), chronic viral hepatitis (CVH), and compensated LC. The mean serum level of biotin in decompensated LC (1.8 +/- 0.6 microgram/ml) and hepatoma (1.7 +/- 0.8 microgram/ml) was significantly lower than in the control group (2.5 +/- 1.0 microgram/ml), and urinary excretion of biotin was increased in patients with liver disease, particularly in decompensated LC. Biotinidase activity correlated positively with serum biotin level and correlated negatively with urinary biotin level. Moreover, in four of five patients with severe liver disease the excretion of propionate, lactate, and 3-hydroxybutyrate decreased after biotin supplementation. The data for patients with severe liver disease so resembled those for late-onset multiple carboxylase deficiency that biotinidase deficiency is likely in patients with severe liver disease.

A novel cylinder-type metal-insulator-metal (MIM) capacitor in porous low-k film (CAPL) is proposed for embedded DRAMs (eDRAMs). The CAPL removes long bypass-contacts (BCT) with high resistance, which have been used to connect transistors with Cu interconnects by way of the MIM capacitor layer. A key technical challenge for the CAPL integration is control of pore structure in the low-k film to avoid metal contamination during the gas-phase deposition of the MIM electrode (BE) on the porous low-k film. A molecular-pore-stack (MPS) SiOCH film (k=2.5) with very small pores (0.4 nm-diameter) is found to be the best candidate for the CAPL structure, applicable to eDRAM with high performance logics for 28 nm-node and beyond.