1. A Microcantilever-based Gas Flow Sensor for Flow Rate and Direction Detection
- Author
-
Rong-Hua Ma, Po-Cheng Chou, Chien-Hsiung Tsai, Tzu-Han Hsueh, Chia-Yen Lee, Lung-Ming Fu, Yu-Hsiang Wang, Department of Mechanical and Automation Engineering, Da-Yeh University (DYU), Department of Materials Engineering, National Pingtung University of Science and Technology, Department of Interior Design, Shu-Te University, and Department of Vehicle Engineering
- Subjects
Microelectromechanical systems ,FOS: Computer and information sciences ,Materials science ,Cantilever ,Silicon ,Other Computer Science (cs.OH) ,Airflow ,[INFO.INFO-OH]Computer Science [cs]/Other [cs.OH] ,Analytical chemistry ,chemistry.chemical_element ,02 engineering and technology ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,Piezoresistive effect ,0104 chemical sciences ,chemistry.chemical_compound ,Silicon nitride ,chemistry ,Residual stress ,Computer Science - Other Computer Science ,Wafer ,Composite material ,0210 nano-technology - Abstract
The purpose of this paper is to apply characteristics of residual stress that causes cantilever beams to bend for manufacturing a micro-structured gas flow sensor. This study uses a silicon wafer deposited silicon nitride layers, reassembled the gas flow sensor with four cantilever beams that perpendicular to each other and manufactured piezoresistive structure on each micro-cantilever by MEMS technologies, respectively. When the cantilever beams are formed after etching the silicon wafer, it bends up a little due to the released residual stress induced in the previous fabrication process. As air flows through the sensor upstream and downstream beam deformation was made, thus the airflow direction can be determined through comparing the resistance variation between different cantilever beams. The flow rate can also be measured by calculating the total resistance variations on the four cantilevers., Comment: Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/handle/2042/16838)
- Published
- 2008