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Carborane compounds, known for their exceptional thermal stability and non‐toxic attributes, have garnered widespread utility in medicine, supramolecular design, coordination/organometallic chemistry, and others. Although there is considerable interest among chemists, the integration of suitable carborane molecules into ferroelectric materials remains a formidable challenge. In this study, we employ the quasi‐spherical design strategy to introduce functional groups at the boron vertices of the o‐carborane cage, aiming to reduce molecular symmetry. This approach led to the successful synthesis of the pioneering ferroelectric crystals composed of cage‐like carboranes: 9‐OH‐o‐carborane (1) and 9‐SH‐o‐carborane (2), which undergo above‐room ferroelectric phase transitions (Tc) at approximately 367 K and 347 K. Interestingly, 1 and 2 represent uniaxial and multiaxial ferroelectrics respectively, with 2 exhibiting six polar axes and as many as twelve equivalent polarization directions. As the pioneering instance of carborane ferroelectric crystals, this study introduces a novel structural archetype for molecular ferroelectrics, thereby providing fresh insights into the exploration of molecular ferroelectric crystals with promising applications. [ABSTRACT FROM AUTHOR]

In spite of the flexoelectric effect being a universal phenomenon in the ferroelectric perovskites, the current understanding of flexoelectric aging in ferroelectrics is, actually, rather incomplete. In this paper, we have fabricated a series of Mn-doped BaTiO3 perovskite ceramics (BaTi1–xMnxO3, x = 0.1% and 1%, BTMO) to systematically investigate the corresponding flexoelectric aging behavior by controlling the concentration of Mn. We found that the variation of Mn dopant significantly effects the Curie temperature, dielectric constant, flexoelectric aging, and flexoelectric coefficient of the BTMO ceramics. Especially for the BTMO (0.1%) ceramics, obvious ferroelectric aging and flexoelectric aging phenomenon are observed at room temperature. The main reason for aging of BTMO ceramics is that the doping of Mn introduces oxygen vacancies, which tend to be stable under the action of strain gradient and electric field. Therefore, the results presented in this paper verify that the flexoelectric aging in Mn-doped BTO ceramics is closely related to ferroelectric fatigue. [ABSTRACT FROM AUTHOR]

Significant flexoelectricity is expected to exist in materials with colossal permittivity. Here, we systematically studied the interplay of flexoelectricity and permittivity in CaCu3Ti4O12 (CCTO) ceramic by examining the thickness and electrode dependence of the flexoelectric coefficients over a wide range of temperatures. We found that an abnormal flexoelectric transition occurs at 95 °C. Below this critical temperature, the barrier layer mechanism dominates the significant flexoelectricity in CCTO ceramic, whereas above this critical temperature, the flexoelectric response mainly originates from the contributions of semiconducting grains and insulating grain boundaries. The observed flexoelectric transition is beneficial not only for developing new materials with high flexoelectric coefficients but also for understanding the colossal permittivity mechanism in CCTO ceramics. [ABSTRACT FROM AUTHOR]

Donor doping can increase the dielectric constant of a material by several orders of magnitude due to induced space charge causing interfacial polarization. Giant dielectric properties and interface polarization are also both expected to greatly enhance the flexoelectric behavior of a material. In this work, a typical flexoelectric ceramic material, BaTiO3, was selected and donor doped using elemental Nb. Compared with the nominal BaTiO3 ceramic, the dielectric constant and flexoelectric coefficient of the Nb-doped BaTiO3 ceramics were significantly improved. The transverse flexoelectric coefficient of 0.3 mol. % Nb-BaTiO3 was found to increase to nearly 40 times the nominal value, reaching 387 μC/m. The results indicate that the giant dielectric response, and therefore the giant flexoelectric response, is the result of the combined effects of internal barrier-layer capacitance and surface barrier-layer capacitance. This study not only deepens the understanding of the semiconductor macro-dielectric effect and the flexoelectric mechanism caused by doping, but it also provides a feasible strategy for the design of giant dielectric/flexoelectric response materials and related devices with high dielectric constants and flexoelectric coefficients. [ABSTRACT FROM AUTHOR]

Flexoelectric effect describes the electromechanical coupling between the strain gradient and its internal polarization in all dielectrics. Despite this universality, the resulting flexoelectric field remains small at the macroscopic level. However, in nanosystems, the size-dependent effect of flexoelectricity becomes increasingly significant, leading to a notable flexoelectric field that can strongly influence the material's physical properties. This review aims to explore the flexoelectric effect specifically at the nanoscale. We achieve this by examining strain gradients generated through two distinct methods: internal inhomogeneous strain and external stimulation. In addition, advanced synthesis techniques are utilized to enhance the properties and functionalities associated with flexoelectricity. Furthermore, we delve into other coupled phenomena observed in thin films, including the coupling and utilization of flexomagnetic and flexophotovoltaic effects. This review presents the latest advancements in these areas and highlights their role in driving further breakthroughs in the field of flexoelectricity. [ABSTRACT FROM AUTHOR]

Photonic computing has the potential to significantly improve energy efficiency and data processing speed beyond that of von Neumann architecture. Although various optical processing techniques have been developed during recent two decades, the photonic manipulation is still a big challenging due to the bosonic nature of photons. Herein, we propose a ferroelectric field-controlled photonic computing based on the heterostructure of ferroelectric/van der Waals semiconductor. The strong and tunable electrostatic coupling of ferroelectric (PMN-PT) with monolayer WS2 results in a multi-level (24 bits) photoluminescence (PL) output. Furthermore, combining device modeling with experiments, we find that the multi-level PL output is because of the regulation of ferroelectric polarization on the net recombination rate of WS2. The ferroelectric field-controlled multi-level PL output enables us to design an optical arithmetic operation in the PMN-PT/WS2 heterostructure, which provides an attractive solution for photonic information computing. [ABSTRACT FROM AUTHOR]

The recently discovered large flexoelectricity in relaxor ferroelectrics has rekindled considerable research interest. In this paper, several Sm-doped Pb(Mg2/3Nb1/3)O3–xPbTiO3 (PMN–xPT) ferroelectric ceramics were prepared and the relationship between flexoelectricity and PT content was systematically investigated. The largest flexoelectric response (∼550 μC/m) was observed in the Sm-doped PMN–32PT ceramic, which should be accounted for in the reorientation of the polar nanoregions. At room temperature, the flexoelectric response of Sm-doped PMN–32PT ceramic is an order of magnitude higher than that of the parent PMN–PT ceramics and even 50% higher than that of Bi–PMN–32PT ceramic (∼300 μC/m). Such a big increment is directly related to the greater local structural heterogeneity caused by Sm3+ ions into PMN–PT. Therefore, the result presented in this paper verifies that introducing local structural heterogeneity is a feasible approach to achieve ultrahigh flexoelectricity. [ABSTRACT FROM AUTHOR]