1. Investigations on rGO on silicon-based UV photon detector.
- Author
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Anshika, G., Shruthi, G., Baishali, G., Radhakrishna, V., Vijay, S., and Saara, K.
- Subjects
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FIELD-effect transistors , *PHOTON detectors , *GRAPHENE oxide , *SILICON detectors , *AUTOMATIC timers - Abstract
The possibility of using reduced graphene oxide field effect transistor (rGOFET) on a high resistivity silicon as a photon detector in bottom gate FET architecture has been explored in this work. Highly conductive reduced graphene oxide (rGO) is synthesized from graphene oxide (GO) by a hybrid technique using hydroiodic acid (HI) fumes and thermal annealing for 6 h on the substrate itself. The rGOFET device is irradiated from top and bottom at different gate-source voltages ranging between 50 mV and 5 V and a comparison of its performance is done. The fabricated device has shown significant response to photons in the UV range peaking at 256 nm with a responsivity of 0.15 A/W at 5 V when irradiated from top and 0.095 A/W at 5 V when irradiated from bottom. The response time of the device measured is 0.23 s, and recovery time is 0.12 s. [ABSTRACT FROM AUTHOR]
- Published
- 2021
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