Author: "Shirafuji, J." - Searchworks@Jio Institute Digital Library Search Results

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178 results on '"Shirafuji, J."'

1. Growth of GaN Thin Films on Sapphire Substrate by Low Pressure MOCVD

Author: Ishida, M., Hashimoto, T., Takayama, T., Imafuji, O., Yuri, M., Yoshikawa, A., Itoh, K., Terakoshi, Y., Sugino, T., and Shirafuji, J.
Published: 1997
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2. Characterization of electron traps in plasma-treated AlInAs

Author: Sugino, T., Hirata, D., Yamamura, I., Matsuda, K., and Shirafuji, J.
Published: 1996
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3. Photoluminescence Study of Lattice Defects in CdTe by Means of Heat Treatment and Electron Irradiation

Author: Taguchi, T., Shirafuji, J., Inuishi, Y., Williams, Ferd, editor, Baron, B., editor, Martens, M., editor, and Varma, S. P., editor
Published: 1973
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4. Influence of lattice mismatch on properties of InxGa1-xAs1-yPy layers epitaxially grown on InP substrates.

Author: Shirafuji, J., Tamura, A., Oka, K., Inoue, M., and Inuishi, Y.
Published: 1981
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5. Photon drag effect in p-type tellurium at 10.6 μm.

Author: Panyakeow, S., Shirafuji, J., and Inuishi, Y.
Published: 1975
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6. γ-Irradiation Effect on Electronic Properties in Hydrogenated Amorphous Silicon

Author: Shirafuji, J., primary, Nagata, S., additional, and Shirakawa, K., additional
Published: 1986
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7. Effect of hydrogen dilution of silane on optoelectronic properties in glow-discharged hydrogenated silicon films.

Author: Shirafuji, J., Nagata, S., and Kuwagaki, M.
Subjects: *SILICON crystals, *SEMICONDUCTOR films, *PHOTOELECTRICITY
Abstract: Presents information on a study that measured electrical and photoelectric properties of glow-discharged hydrogenated silicon films as a function of hydrogen dilution. Research methodology; Results and discussion on the study.
Published: 1985
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8. Valley Transfer of Hot Electrons in GaAs and Related Mixed Crystals

Author: Shirafuji, J., primary, Inoue, M., additional, Ashida, K., additional, Sugino, T., additional, and Inuishi, Y., additional
Published: 2013
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9. EFFECT OF LANTHANUM ON FERROELECTRIC PHASE TRANSITION OF Pb1−xLaxTiO3 CERAMICS

Author: YOSHIDA, K., primary, KANAI, K., additional, SAWAZAKI, M., additional, and SHIRAFUJI, J., additional
Published: 2001
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10. Preparation of p-type polycrystalline diamond films and their applications to hole injection layers in amorphous SiC:H thin film light emitting diodes

Author: Chirakawikul, K., primary, Sujaridchai, T., additional, Ratwises, B., additional, Kruangam, D., additional, Panyakeow, S., additional, Boonkosum, W., additional, Sugino, T., additional, and Shirafuji, J., additional
Published: 1998
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11. Electrical Characteristics of Chemical Vapor Deposited Diamond Films

Author: Sugino, T., primary and Shirafuji, J., additional
Published: 1996
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12. p-diamond/n-GaAs junctions formed by direct bonding

Author: Sugino, T., primary, Itagaki, T., additional, and Shirafuji, J., additional
Published: 1996
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13. Enhancement of barrier height of Au/PNx/InP Schottky diodes by in situ surface treatment

Author: Sakamoto, Y., primary, Sugino, T., additional, Miyazaki, T., additional, and Shirafuji, J., additional
Published: 1995
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14. X-ray photoelectron spectroscopy analysis of plasma-treated surfaces of diamond films

Author: Shirafuji, J., primary, Sakamoto, Y., additional, Furukawa, A., additional, Shigeta, H., additional, and Sugino, T., additional
Published: 1995
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15. Barrier height enhancement of Au Schottky junctions on phosphine-plasma treated n-AlInAs

Author: Sugino, T., primary, Yamamura, I., additional, and Shirafuji, J., additional
Published: 1994
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16. Photocarrier generation in σ-bonded organic polysilane

Author: Hattori, R., primary, Aoki, Y., additional, and Shirafuji, J., additional
Published: 1993
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17. Effect of phosphine plasma on suppression of plasma-induced defects in InGaAs.

Author: Sugino, T., Miyazaki, T., Matsuda, X., and Shirafuji, J.
Published: 1998
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18. Optically-induced ESR and absorption edge shift in GeSx glasses.

Author: Shirafuji, J., Kumagai, N., and Inuishi, Y.
Published: 1984
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19. Barrier height enhancement of Schottky junctions formed on phosphidized InGaAs.

Author: Sugino, T., Sakamoto, Y., Nomoto, K., Sumiguchi, T., and Shirafuji, J.
Published: 1993
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20. Characteristics of Schottky junctions on H/sub 2-/ and PH/sub 3-/plasma treated InP.

Author: Sugino, T., Yamamoto, H., Yamada, T., Ninomiya, H., Sakamoto, Y., Matsuda, K., and Shirafuji, J.
Published: 1991
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21. Surface passivation of InP by in-situ dry process using PH/sub 3/-plasma and Se vapor.

Author: Sugino, T., Goda, K., Okitani, H., and Shirafuji, J.
Published: 1992
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22. Formation of PN/sub x//InP structure by in-situ remote plasma processes.

Author: Sakamoto, Y., Sugino, T., Miyazaki, T., and Shirafuji, J.
Published: 1995
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23. Thermal stability of Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.47/In/sub 0.53/As/InP heterostructure and its improvement by phosphidization.

Author: Takahashi, N., Shiota, M., Zhu, Y., Shimizu, M., Hirata, D., Sakamoto, Y., Sugino, T., and Shirafuji, J.
Published: 1995
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24. Characterization of electron traps in AlInAs treated with plasma.

Author: Sugino, T., Hirata, D., Yamamura, I., Matsuda, K., and Shirafuji, J.
Published: 1995
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25. Improved barrier height of Schottky junctions formed on phosphidized AlInAs.

Author: Sugino, T., Yamamura, I., Furukawa, A., Matsuda, K., and Shirafuji, J.
Published: 1994
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26. Characterization of plasma-induced traps in n-InP.

Author: Sakamoto, Y., Ninomiya, H., Matsuda, K., Sugino, T., and Shirafuji, J.
Published: 1994
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27. Characterization of InP Schottky junctions formed by in-situ remote plasma process.

Author: Sugino, T., Sakamoto, Y., Miyazaki, T., Kousaka, K., Matsuda, K., and Shirafuji, J.
Published: 1996
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28. Electron emission characteristics of polycrystalline diamond films.

Author: Sugino, T., Kawasaki, S., Yokota, Y., Iwasaki, Y., and Shirafuji, J.
Published: 1997
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29. Electron emission characteristics of boron nitride films synthesized by plasma-assisted chemical vapor deposition.

Author: Sugino, T., Kawasaki, S., Tanioka, K., and Shirafuji, J.
Published: 1997
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30. Electron transport of amorphous hydrogenated silicon-carbon alloy films prepared by glow discharge decomposition

Author: Enomoto, T., primary, Hattori, R., additional, and Shirafuji, J., additional
Published: 1991
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31. Preparation of Bi2Sr2CuO6 single crystals by the traveling solvent floating zone method

Author: Matsumoto, M., primary, Shirafuji, J., additional, Kitahama, K., additional, Kawai, S., additional, Shigaki, I., additional, and Kawate, Y., additional
Published: 1991
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32. Electrical conduction in undoped diamond films prepared by chemical vapor deposition

Author: Muto, Y., primary, Sugino, T., additional, Shirafuji, J., additional, and Kobashi, K., additional
Published: 1991
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33. Time-of-flight measurement of longitudinal carrier transport in a-Si:H/a-SiNx : H multilayer structures and gap state distribution in a-Si:H layers

Author: Hattori, R., primary and Shirafuji, J., additional
Published: 1991
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34. Effect of photodecomposed-PH3 treatment on PN/InP metal–insulator–semiconductor diodes

Author: Uda, A., primary, Sugino, T., additional, Ito, H., additional, and Shirafuji, J., additional
Published: 1991
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35. Longitudinal electron transport in hydrogenated amorphous silicon/silicon nitride multilayer structures

Author: Hattori, R., primary and Shirafuji, J., additional
Published: 1990
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36. Corrigendum: Barrier height enhancement of InP Schottky junctions by treatment with photo-decomposed PH3

Author: Sugino, T., primary, Ito, H., additional, and Shirafuji, J., additional
Published: 1990
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37. Barrier height enhancement of InP Schottky junctions by treatment with photo-decomposed PH3

Author: Sugino, T., primary, Ito, H., additional, and Shirafuji, J., additional
Published: 1990
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38. Excitonic emission in cadmium telluride.

Author: Taguchi, T., Shirafuji, J., and Inuishi, Y.
Published: 1975
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39. EFFECT OF LANTHANUM ON FERROELECTRIC PHASE TRANSITION OF Pb1-xLaxTiO3 CERAMICS.

Author: YOSHIDA, K., KANAI, K., SAWAZAKI, M., and SHIRAFUJI, J.
Subjects: LANTHANUM compounds, FERROELECTRIC materials, PHASE transitions, LEAD compounds, CERAMIC metals, PERMITTIVITY
Published: 2001

40. Temperature dependence of second-harmonic generation in tellurium with a CO2 laser at 10.6 μ.

Author: Panyakeow, S., Tanigaki, Y., Shirafuji, J., and Inuishi, Y.
Published: 1972
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41. Influence of lattice mismatch on properties of InxGa1−xAs1−yPylayers epitaxially grown on InP substrates

Author: Shirafuji, J., Tamura, A., Oka, K., Inoue, M., and Inuishi, Y.
Published: 1981
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42. Inheritance of zinc-blende structure from 3C-SiC/Si(001) substrate in growth of GaN by MOCVD

Author: Hashimoto, T., Imafuji, O., Ishida, M., Terakoshi, Y., Sugino, T., Yoshikawa, A., Itoh, K., and Shirafuji, J.
Published: 1996
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43. Interface properties of PN~x/InP structures by in-situ remote plasma processes

Author: Sugino, T., Sakamoto, Y., Miyazaki, T., and Shirafuji, J.
Published: 1996
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44. Preparation and optical properties of doubly-oriented poly-(di-methyl-silane) films

Author: Hattori, R., Shirafuji, J., Aoki, Y., Fujiki, T., Kawasaki, S., and Nishida, R.
Published: 1996
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45. Hot carrier recombination radiation in GaAs diode

Author: Inoue, M., Takenaka, N., Shirafuji, J., and Inuishi, Y.
Abstract: In order to analyze hot carrier effects on the recombination spectra, the electroluminescence from p+-ndiode and the photoluminescence from n-GaAs under an electric field were measured at 77 K. A high carrier temperature up to 150 K was obtained under the forward bias current of 5200 A/cm2. The experimentally determined distribution function from the radiative recombination spectrum was quantitatively interpreted with a Monte Carlo simulation, taking account of the dominant inelastic scattering with LOphonon and electron-electron interaction.
Published: 1978
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