1. 2.5 to 10.0 GHz Band-Pass Non-Uniform Distributed GaN MMIC HPA
- Author
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Masatake Hangai, Shinichi Miwa, Shintaro Shinjo, Jun Kamioka, and Yoshitaka Kamo
- Subjects
Power-added efficiency ,Materials science ,business.industry ,Amplifier ,020208 electrical & electronic engineering ,Distributed power ,020206 networking & telecommunications ,Gallium nitride ,02 engineering and technology ,Power (physics) ,chemistry.chemical_compound ,chemistry ,Band-pass filter ,0202 electrical engineering, electronic engineering, information engineering ,Optoelectronics ,Wideband ,business ,Monolithic microwave integrated circuit - Abstract
This paper reports on a wideband Gallium Nitride (GaN) Monolithic Microwave Integrated Circuit (MMIC) high power amplifiers (HPAs) operated in S to X bands. Two band-pass non-uniform distributed power amplifiers (NDPAs) are designed to obtain wideband and high power characteristics. One is a single-ended HPA which demonstrates output power of 17 to 26 W, power added efficiency (PAE) of 24 to 44% across 2.5 to 11.0 GHz with chip size of 4.2 mm2. The other is a two-way combined HPA which demonstrates output power of 27 to 61 W, PAE of 24 to 43% across 2.5 to 10.0 GHz with chip size of 9.6 mm2.
- Published
- 2020
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