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The utilization of ferromagnetic (FM) materials in thermoelectric devices allows one to have a simpler structure and/or independent control of electric and thermal conductivities, which may further remove obstacles for this technology to be realized. The thermoelectricity in FM/non-magnet (NM) heterostructures using an optical heating source is studied as a function of NM materials and a number of multilayers. It is observed that the overall thermoelectric signal in those structures which is contributed by spin Seebeck effect and anomalous Nernst effect (ANE) is enhanced by a proper selection of NM materials with a spin Hall angle that matches to the sign of the ANE. Moreover, by an increase of the number of multilayer, the thermoelectric voltage is enlarged further and the device resistance is reduced, simultaneously. The experimental observation of the improvement of thermoelectric properties may pave the way for the realization of magnetic-(or spin-) based thermoelectric devices.

We report the thermal spin injection and accumulation in crystalline CoFe/MgO tunnel contacts to n-type Si through Seebeck spin tunneling (SST). With the Joule heating (laser heating) of Si (CoFe), the thermally induced spin accumulation is detected by means of the Hanle effect for both polarities of the temperature gradient across the tunnel contact. The magnitude of the thermal spin signal scales linearly with the heating power and its sign is reversed as we invert the temperature gradient, demonstrating the major features of SST and thermal spin accumulation. We observe that, for the Si (CoFe) heating, the thermal spin signal induced by SST corresponds to the majority (minority) spin accumulation in the Si. Based on a quantitative comparison of thermal and electrical spin signals, it is noted that the thermal spin injection through SST can be a viable approach for the efficient injection of spin accumulation, Comment: 15 pages, 5 figures

We have investigated the electrical Hanle effect with magnetic fields applied at an oblique angle ({\theta}) to the spin direction (the oblique Hanle effect, OHE) in CoFe/MgO/semiconductor (SC) contacts by employing a three-terminal measurement scheme. The electrical oblique Hanle signals obtained in CoFe/MgO/Si and CoFe/MgO/Ge contacts show clearly different line shapes depending on the spin lifetime of the host SC. Notably, at moderate magnetic fields, the asymptotic values of the oblique Hanle signals (in both contacts) are consistently reduced by a factor of cos^2({\theta}) irrespective of the bias current and temperature. These results are in good agreement with predictions of the spin precession and relaxation model for the electrical oblique Hanle effect. At high magnetic fields where the magnetization of CoFe is significantly tilted from the film plane to the magnetic field direction, we find that the observed angular dependence of voltage signals in the CoFe/MgO/Si and CoFe/MgO/Ge contacts are well explained by the OHE, considering the misalignment angle between the external magnetic field and the magnetization of CoFe., Comment: 19 pages, 8 figures

Combined measurements of normal and inverted Hanle effects in CoFe/MgO/semiconductor (SC) contacts reveal the effect of spin relaxation rate on the interfacial spin depolarization (ISD) from local magnetic fields. Despite the similar ferromagnetic electrode and interfacial roughness in both CoFe/MgO/Si and CoFe/MgO/Ge contacts, we have observed clearly different features of the ISD depending on the host SC. The precession and relaxation of spins in different SCs exposed to the local fields from more or less the same ferromagnets give rise to a notably different ratio of the inverted Hanle signal to the normal one. At room temperature, a large ISD is observed in the CoFe/MgO/Si contact, but a small ISD in the CoFe/MgO/Ge contact. The ISD of the CoFe/MgO/Ge contact has been substantially increased at low temperature. These results can be ascribed to the difference of spin relaxation in host SCs. A model calculation of the ISD, considering the spin precession due to the local field and the spin relaxation in the host SC, explains the temperature and bias dependence of the ISD consistently., Comment: 23 pages, 6 figures

We first report the all-electrical spin injection and detection in CoFe/MgO/moderately doped n-Ge contact at room temperature (RT), employing threeterminal Hanle measurements. A sizable spin signal of ~170 k{\Omega} {\mu}m^2 has been observed at RT, and the analysis using a single-step tunneling model gives a spin lifetime of ~120 ps and a spin diffusion length of ~683 nm in Ge. The observed spin signal shows asymmetric bias and temperature dependences which are strongly related to the asymmetry of the tunneling process., Comment: 28 pages, 5 figures

An interacting quantum dot side-coupled to a perfect quantum wire is studied. Transport through the quantum wire is investigated by using an exact sum rule and the slave-boson mean field treatment. It is shown that the Kondo effect provides a suppression of the transmission due to the destructive interference of the ballistic channel and the Kondo channel. At finite temperatures, anti-resonance behavior is found as a function of the quantum dot level position, which is interpreted as a crossover from the high temperature Kondo phase to the low temperature charge fluctuation phase., Comment: 4 pages Revtex, 3 eps figures

An interacting quantum dot inserted in a mesoscopic ring is investigated. A variational ansatz is employed to describe the ground state of the system in the presence of the Aharonov-Bohm flux. It is shown that, for even number of electrons with the energy level spacing smaller than the Kondo temperature, the persistent current has a value similar to that of a perfect ring with the same radius. On the other hand, for a ring with odd number electrons, the persistent current is found to be strongly suppressed compared to that of an ideal ring, which implies the suppression of the Kondo-resonant transmission. Various aspects of the Kondo-assisted persistent current are discussed., Comment: 4 pages Revtex, 4 Postscript figures, final version to appear in Phys. Rev. Lett. 85, No.26 (Dec. 25, 2000)