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Rare-earth trihydrides ($R$H$_3$) exhibit intriguing coupled electronic and structural properties as a function of doping, hydrogen vacancies, and thermodynamic conditions. Theoretical studies of these materials typically rely on density functional theory (DFT), including the use of small supercells that may underestimate strong correlation effects and structural distortions which in turn may influence their metallicity. Here, we elucidate the roles of lattice distortions and correlation effects on the electronic properties of pristine and doped $R$H$_3$ by adopting DFT+U and Quantum Monte Carlo (QMC) methods. Linear-response constrained DFT (LR-cDFT) methods find Hubbard U $\approx 2$ eV for $R_d$ orbitals and U$\approx 6$ eV for H$_s$/N$_p$ orbitals. The small U on Lu$_d$ orbitals is consistent with QMC calculations on LuH$_3$ and LuH$_{2.875}$N$_{0.125}$. In pure face-centered-cubic (FCC) $R$H$_3$ ($R$=Lu,Y), neither DFT nor DFT+U with the self-consistently determined U is enough to create a band gap, however a supercell with hydrogen distortions creates a small gap whose magnitude increases when performing DFT+U with self-consistently determined U values. Correlation effects, in turn, have a moderate influence on the coupled structural and electronic properties of doped RH$_3$ compounds and may be important when considering the competition between structural distortions and superconductivity., Comment: 5 figures, 7 pages content + 3 pages references + 2 pages of Appendices

Using diffusion Monte Carlo (DMC) and density functional theory (DFT) calculations, we examined the structural stability and interlayer binding properties of PtSe$_2$, a representative transition metal dichalcogenide (TMD) with strong interlayer interaction. Our DMC results for the bilayer revealed that AA and AB-r stacking modes are nearly degenerate, highlighting the significant role of interlayer hybridization in offsetting the energy cost due to larger interlayer separations in the AB-r mode. Additionally, our DMC-benchmarked DFT studies with the r$^2$SCAN+rVV10 functional demonstrated pronounced stacking polymorphism in few-layer PtSe$_2$, suggesting the potential for stacking faults and the formation of grain boundaries between different stacking domains which could develop metallic electronic structures. Thus this polymorphism, along with selenium vacancies, influences a layer-dependent metal-insulator transition observed in few-layer PtSe$_2$. Our findings emphasize the importance of both van der Waals interactions and interlayer hybridization in determining the phase stability and electronic properties of TMDs, advancing our understanding of their fundamental properties and refining theoretical models for practical applications in nanoelectronic devices., Comment: 20 pages. 6 figures

The field of two-dimensional (2D) materials has grown dramatically in the last two decades. 2D materials can be utilized for a variety of next-generation optoelectronic, spintronic, clean energy, and quantum computation applications. These 2D structures, which are often exfoliated from layered van der Waals (vdW) materials, possess highly inhomogeneous electron densities and can possess short- and long-range electron correlations. The complexities of 2D materials make them challenging to study with standard mean-field electronic structure methods such as density functional theory (DFT), which relies on approximations for the unknown exchange-correlation functional. In order to overcome the limitations of DFT, highly accurate many-body electronic structure approaches such as Diffusion Monte Carlo (DMC) can be utilized. In the past decade, DMC has been used to calculate accurate magnetic, electronic, excitonic, and topological properties in addition to accurately capturing interlayer interactions and cohesion and adsorption energetics of 2D materials. This approach has been applied to 2D systems of wide interest including graphene, phosphorene, MoS$_2$, CrI$_3$, VSe$_2$, GaSe, GeSe, borophene, and several others. In this review article, we highlight some successful recent applications of DMC to 2D systems for improved property predictions beyond standard DFT.

Accurate determination of electronic properties of correlated oxides remains a significant challenge for computational theory. Traditional Hubbard-corrected density functional theory (DFT+U) frequently encounters limitations in precisely capturing electron correlation, particularly when predicting band gaps. We introduce a systematic methodology to enhance the accuracy of diffusion Monte Carlo (DMC) simulations for both ground and excited states, focusing on LiCoO$_2$ as a case study. By employing a selected CI (sCI) approach, we demonstrate the capability to optimize wavefunctions beyond the constraints of single-reference DFT+U trial wavefunctions. We show that the sCI framework enables accurate prediction of band gaps in LiCoO$_2$, closely aligning with experimental values and substantially improving upon traditional computational methods. The study uncovers a nuanced mixed state of $t_{2g}$ a $e_g$ orbitals at the band edges that is not captured by conventional single-reference methods, further elucidating the limitations of PBE+U in describing $d$-$d$ excitations. Our findings advocate for the adoption of beyond-DFT methodologies, such as sCI, to capture the essential physics of excited state wavefunctions in strongly correlated materials. The improved accuracy in band gap predictions and the ability to generate more reliable trial wavefunctions for DMC calculations underscore the potential of this approach for broader applications in the study of correlated oxides. This work not only provides a pathway for more accurate simulations of electronic structures in complex materials but also suggests a framework for future investigations into the excited states of other challenging systems.

Optical control of spin in semiconductors has been pioneered using nanostructures of III-V and II-VI semiconductors, but the emergence of two-dimensional van der Waals materials offers an alternative low-dimensional platform for spintronic phenomena. Indium selenide (InSe), a group-III monochalcogenide van der Waals material, has shown promise for opto-electronics due to its high electron mobility, tunable direct bandgap, and quantum transport. There are predictions of spin-dependent optical selection rules suggesting potential for all-optical excitation and control of spin in a two-dimensional layered material. Despite these predictions, layer-dependent optical spin phenomena in InSe have yet to be explored. Here, we present measurements of layer-dependent optical spin dynamics in few-layer and bulk InSe. Polarized photoluminescence reveals layer-dependent optical orientation of spin, thereby demonstrating the optical selection rules in few-layer InSe. Spin dynamics are also studied in many-layer InSe using time-resolved Kerr rotation spectroscopy. By applying out-of-plane and in-plane static magnetic fields for polarized emission measurements and Kerr measurements, respectively, the $g$-factor for InSe was extracted. Further investigations are done by calculating precession values using a $\textbf{k} \cdot \textbf{p}$ model, which is supported by \textit{ab-initio} density functional theory. Comparison of predicted precession rates with experimental measurements highlights the importance of excitonic effects in InSe for understanding spin dynamics. Optical orientation of spin is an important prerequisite for opto-spintronic phenomena and devices, and these first demonstrations of layer-dependent optical excitation of spins in InSe lay the foundation for combining layer-dependent spin properties with advantageous electronic properties found in this material., Comment: 11 pages, 6 figures, supplemental material

As the only semimetallic $d^{10}$-based delafossite, AgNiO$_2$ has received a great deal of attention due to both its unique semimetallicity and its antiferromagnetism in the NiO$_2$ layer that is coupled with a lattice distortion. In contrast, other delafossites such as AgCoO$_2$ are insulating. Here we study how the electronic structure of AgNi$_{1-x}$Co$_{x}$O$_2$ alloys vary with Ni/Co concentration, in order to investigate the electronic properties and phase stability of the intermetallics. While the electronic and magnetic structure of delafossites have been studied using Density Functional Theory (DFT), earlier studies have not included corrections for strong on-site Coulomb interactions. In order to treat these interactions accurately, in this study we use Quantum Monte Carlo (QMC) simulations to obtain accurate estimates for the electronic and magnetic properties of AgNiO$_2$. By comparison to DFT results we show that these electron correlations are critical to account for. We show that Co doping on the magnetic Ni sites results in a metal-insulator transition near $x\sim 0.33$, and reentrant behavior near $x\sim 0.66$, Comment: 25 Pages, 12 figures

Accurately predicting the formation energy of a compound, which describes its thermodynamic stability, is a key challenge in materials physics. Here, we employ many-body quantum Monte Carlo (QMC) with single-reference trial functions to compute the formation energy of two electronically disparate compounds, the intermetallic VPt$_2$ and the semiconductor CuI, for which standard density functional theory (DFT) predictions using both the Perdew-Burke Ernzerhof (PBE) and the strongly constrained and appropriately normed (SCAN) density functional approximations deviate markedly from available experimental values. For VPt$_2$, we find an agreement between QMC, SCAN, and PBE0 estimates, which therefore remain in disagreement with the much less exothermic experimental value. For CuI, the QMC result agrees with neither SCAN nor PBE pointing towards DFT exchange-correlation biases, likely related to the localized Cu $3d$ electrons. Compared to the behavior of some density functional approximations within DFT, spin-averaged QMC exhibits a smaller but still appreciable deviation when compared to experiment. The QMC result is slightly improved by incorporating spin-orbit corrections for CuI and solid I$_2$, so that experiment and theory are brought into imperfect but reasonable agreement within about 120~meV/atom.

In this work density functional theory (DFT) and diffusion Monte Carlo (DMC) methods are used to calculate the binding energy of a H atom chemisorbed on the graphene surface. The Perdew-Burke-Ernzerhof (PBE) value of the binding energy is about 20% larger in magnitude than the diffusion Monte Carlo result. The inclusion of exact exchange through the use of the Heyd-Scuseria-Ernzerhof (HSE) functional brings the DFT value of the binding energy closer in line with the DMC result. It is also found that there are significant differences in the charge distributions determined using PBE and DMC approaches., Comment: The following article has been submitted to The Journal of Chemical Physics

DFT is a valuable tool for calculating adsorption energies toward designing materials for hydrogen storage. However, dispersion forces being absent from the theory, it remains unclear how the consideration of van der Waals (vdW) interactions affects such calculations. For the first time, we applied diffusion Monte Carlo (DMC) to evaluate the adsorption characteristics of a hydrogen molecule on a (5,5) armchair silicon-carbide nanotube (H$_2$-SiCNT). Within the framework of density functional theory (DFT), we also benchmarked various exchange-correlation functionals, including those recently developed for treating dispersion or vdW interactions. We found that the vdW-corrected DFT methods agree well with DMC, whereas the local (semilocal) functional significantly over (under)-binds. Furthermore, we fully optimized the H$_2$-SiCNT geometry within the DFT framework and investigated the correlation between structure and charge density. The vdW contribution to adsorption was found to be non-negligible at approximately 1 kcal/mol per hydrogen molecule, which amounts to 9-29 % of the ideal adsorption energy required for hydrogen storage applications., Comment: 7 pages, 3 figures

The evolution of the electronic structures of strongly correlated insulators with doping has long been a central fundamental question in condensed matter physics; it is also of great practical relevance for applications. We have studied the evolution of NiO under hole {\em and} electron doping using high-quality thin film and a wide range of experimental and theoretical methods. The evolution is in both cases very smooth with dopant concentration. The band gap is asymmetric under electron and hole doping, consistent with a charge-transfer insulator picture, and is reduced faster under hole than electron doping. For both electron and hole doping, occupied states are introduced at the top of the valence band. The formation of deep donor levels under electron doping and the inability to pin otherwise empty states near the conduction band edge is indicative that local electron addition and removal energies are dominated by a Mott-like Hubbard $U$-interaction even though the global bandgap is predominantly a charge-transfer type gap., Comment: Revised version

Diffusion Monte Carlo (DMC) calculations were performed for an accurate description of the nature of the O$_2$ adsorption on a single layer graphene. We investigated the stable orientation of O$_2$ at a specific adsorption site as well as its equilibrium adsorption energy. At equilibrium adsorption distances, an O$_2$ molecule was found to prefer a horizontal orientation, where the O-O bond is parallel to the graphene surface, to the vertical orientation. However, the vertical orientation is favored at the O$_2$-graphene distances shorter than the equilibrium distance, which could be understood by the steric repulsion between O and C atoms. Contrary to previous DFT calculations, our DMC calculations show that the midpoint of a C-C bond (a bridge site) is energetically preferred for the O$_2$ adsorption to a center of a hexagonal ring (a hollow site). The lowest DMC adsorption energy was found at an intermediate point between a hollow and a bridge site, where the O$_2$ adsorption energy was estimated to be -0.142(4) eV that was in very good agreement with the recently-reported experimental value. Finally, we have found that O$_2$ is very diffusive on the surface of graphene with the diffusion barrier along a bridge-hollow-bridge path being as small as ~ 11 meV., Comment: 19 pages, 7 figures

Cubic hafnia (HfO$_2$) is of great interest for a number of applications in electronics because of its high dielectric constant. However, common defects in such applications degrade the properties of hafina. We have investigated the electronic properties of oxygen vacancies and nitrogen substitution in cubic HfO$_2$ using first principles calculations based on density functional theory (DFT) and many-body diffusion Monte Carlo (DMC) methods. We investigate five different charge defect states of oxygen vacancies, as well as substitutional N defects which can lead to local magnetic moments. Both DMC and DFT calculations shows that an oxygen vacancy induces strong lattice relaxations around the defect. Finally, we compare defect formation energies, charge and spin densities obtained from DMC with results obtained using DFT. While the obtained formation energies from DMC are 0.6~eV -- 1.5~eV larger than those from GGA+U, the agreement for the most important defects, neutral and positively charged oxygen vacancies, and nitrogen substitutional defect, under oxygen-poor conditions are in reasonably good agreement. Our work confirms that nitrogen can act to passivate cubic hafnia for applications in electronics.

Tailoring Gilbert damping of metallic ferromagnetic thin films is one of the central interests in spintronics applications. Here we report a giant Gilbert damping anisotropy in epitaxial Co$_{50}$Fe$_{50}$ thin film with a maximum-minimum damping ratio of 400 \%, determined by broadband spin-torque as well as inductive ferromagnetic resonance. We conclude that the origin of this damping anisotropy is the variation of the spin orbit coupling for different magnetization orientations in the cubic lattice, which is further corroborate from the magnitude of the anisotropic magnetoresistance in Co$_{50}$Fe$_{50}$., Comment: 13 pages, 14 figures

QMCPACK is an open source quantum Monte Carlo package for ab-initio electronic structure calculations. It supports calculations of metallic and insulating solids, molecules, atoms, and some model Hamiltonians. Implemented real space quantum Monte Carlo algorithms include variational, diffusion, and reptation Monte Carlo. QMCPACK uses Slater-Jastrow type trial wave functions in conjunction with a sophisticated optimizer capable of optimizing tens of thousands of parameters. The orbital space auxiliary field quantum Monte Carlo method is also implemented, enabling cross validation between different highly accurate methods. The code is specifically optimized for calculations with large numbers of electrons on the latest high performance computing architectures, including multicore central processing unit (CPU) and graphical processing unit (GPU) systems. We detail the program's capabilities, outline its structure, and give examples of its use in current research calculations. The package is available at http://www.qmcpack.org .

Zirconia (zirconium dioxide) and hafnia (hafnium dioxide) are binary oxides used in a range of applications. Because zirconium and hafnium are chemically equivalent, they have three similar polymorphs, and it is important to understand the properties and energetics of these polymorphs. However, while density functional theory calculations can get the correct energetic ordering, the energy differences between polymorphs depend very much on the specific density functional theory approach, as do other quantities such as lattice constants and bulk modulus. We have used highly accurate quantum Monte Carlo simulations to model the three zirconia and hafnia polymorphs. We compare our results for structural parameters, bulk modulus, and cohesive energy with results obtained from density functional theory calculations. We also discuss comparisons of our results with existing experimental data, in particular for structural parameters where extrapolation to zero temperature can be attempted. We hope our results of structural parameters as well as for cohesive energy and bulk modulus can serve as benchmarks for density-functional theory based calculations and as a guidance for future experiments.

$\alpha$-graphyne is a two-dimensional sheet of $sp$-$sp^2$ hybridized carbon atoms in a honeycomb lattice. While the geometrical structure is similar to that of graphene, the hybridized triple bonds give rise to electronic structure that is different from that of graphene. Similar to graphene, $\alpha$-graphyne can be stacked in bilayers with two stable configurations, but the different stackings have very different electronic structures: one is predicted to have gapless parabolic bands and the other a tunable band gap which is attractive for applications. In order to realize applications, it is crucial to understand which stacking is more stable. This is difficult to model, as the stability is a result of weak interlayer van der Waals interactions which are not well captured by density functional theory (DFT). We have used quantum Monte Carlo simulations that accurately include van der Waals interactions to calculate the interlayer binding energy of bilayer graphyne and to determine its most stable stacking mode. Our results show that interlayer bindings of $sp$- and $sp^{2}$-bonded carbon networks are significantly underestimated in a Kohn-Sham DFT approach, even with an exchange-correlation potential corrected to include, in some approximation, van der Waals interactions. Finally, our quantum Monte Carlo calculations reveal that the interlayer binding energy difference between the two stacking modes is only 0.9(4) meV/atom. From this we conclude that the two stable stacking modes of bilayer $\alpha$-graphyne are almost degenerate with each other, and both will occur with about the same probability at room temperature unless there is a synthesis path that prefers one stacking over the other., Comment: 25 pages, 6 figures

We have performed quantum Monte Carlo calculations to study the cohesion energetics of carbon allotropes, including $sp^3$-bonded diamond, $sp^2$-bonded graphene, $sp$-$sp^2$ hybridized graphynes, and $sp$-bonded carbyne. The computed cohesive energies of diamond and graphene are found to be in excellent agreement with the corresponding values determined experimentally for diamond and graphite, respectively, when the zero-point energies, along with the interlayer binding in the case of graphite, are included. We have also found that the cohesive energy of graphyne decreases systematically as the ratio of $sp$-bonded carbon atoms increases. The cohesive energy of $\gamma$-graphyne, the most energetically-stable graphyne, turns out to be 6.766(6) eV/atom, which is smaller than that of graphene by 0.698(12) eV/atom. Experimental difficulty in synthesizing graphynes could be explained by their significantly smaller cohesive energies. Finally we conclude that the cohesive energy of a newly-proposed graphyne can be accurately estimated with the carbon-carbon bond energies determined from the cohesive energies of graphene and three different graphynes considered here., Comment: 18 pages, 4 figures

Path-integral Monte Carlo calculations were performed to study the adsorption of $^4$He atoms on $\alpha$-graphyne. We find that one $^4$He atom can be embedded onto the in-plane center of each hexagon of the graphyne. In the first $^4$He layer above the $^4$He-embedded graphyne surface, a Mott insulating state was observed at the areal density of 0.0706 \AA$^{-2}$ with three $^4$He atoms occupying each hexagonal cell while the helium atoms form a commensurate triangular solid at a density of 0.0941 \AA$^{-2}$. Here we show that the Ising pseudo-spin symmetry introduced for two degenerate configurations of three $^4$He atoms in a hexagonal cell can be broken by additional $^4$He atoms placed at the hexagon vertices and the Mott-insulator to commensurate-solid transition is a transition from a nonmagnetic spin liquid of frustrated antiferromagnets to a spin-aligned ferromagnet under a particle-induced pseudo-magnetic field., Comment: 5 pages, 4 figures, submitted to Physical Review Letters