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2. Lg = 60 nm In0.53 Ga0.47 As MBCFETs: From gm_max = 13.7 mS/üm and Q = 180 to virtual-source modeling

8. Lg = 130 nm GAA MBCFETs with three-level stacked In0.53Ga0.47As nanosheets

32. Poster presentation

38. Epitaxial NaCl structure delta-TaN(sub x)(001): Electronic transport properties, elastic modulus, and hardness versus N/Ta ratio

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