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1. Impact ionization noise in SiGe HBTs: comparison of device and compact modeling with experimental results

Author

Sakalas, Paulius, Ramonas, Mindaugas, Schroter, Michael, Jungemann, Christoph, Shimukovitch, Artur, and Kraus, Wolfgang

Subjects
Breakdown (Electricity) -- Analysis, Germanium -- Electric properties, Germanium -- Thermal properties, Monte Carlo method -- Usage, Silicon alloys -- Thermal properties, Silicon alloys -- Electric properties, Transistors -- Evaluation, Business, Electronics, Electronics and electrical industries
Abstract

The noise behavior resulting from impact ionization (II) is assessed at room temperature for silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) with box Ge profile, featuring a maximum transit frequency of [f.sub.T] = 80 GHz. The noise parameters (NPs) measured over a wide range of collector-emitter voltages revealed that the weak avalanche model is accurate to capture II noise in examined SiGe HBTs.

Published
2009

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