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685 results on '"Shimomura, S."'

2. Resonant excitation and anti-Stokes luminescence of GaAs single quantum dots

Author

Edamatsu, K., Watatani, C., Itoh, T., Shimomura, S., and Hiyamizu, S.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

We have investigated micro-photoluminescence ($\mu$-PL) and excitation ($\mu$-PLE) spectra of a single GaAs/AlGaAs quantum dot grown on a GaAs (411)A surface. We observed sharp resonant lines in both $\mu$-PL and $\mu$-PLE spectra, corresponding to the discrete energy levels of the dot. When the sample was excited at one of the resonant lines, resonant luminescence lines appear not only in Stokes side but also in anti-Stokes side. We discuss the possible origins of the anomalus anti-Stokes luminescence., Comment: 3pages, 4 figures

Published
2001
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3. Isotemporal substitution of sedentary time with physical activity and its associations with frailty status

Author

Nagai K, Tamaki K, Kusunoki H, Wada Y, Tsuji S, Itoh M, Sano K, Amano M, Shimomura S, and Shinmura K

Subjects
isotemporal substitution, frailty, physical activity, Geriatrics, RC952-954.6
Abstract

Koutatsu Nagai,1 Kayoko Tamaki,2 Hiroshi Kusunoki,2 Yosuke Wada,3 Shotaro Tsuji,4 Masako Ito,5 Kyoko Sano,5 Manabu Amano,6 Soji Shimomura,7 Ken Shinmura2 1Department of Physical Therapy, School of Rehabilitation, Hyogo University of Health Sciences, Kobe, Japan; 2Department of General Medicine, Hyogo College of Medicine, Nishinomiya, Japan; 3Department of Rehabilitation, Hyogo College of Medicine Sasayama Medical Center, Sasayama, Japan; 4Department of Orthopaedic Surgery, Hyogo College of Medicine Sasayama Medical Center, Sasayama, Japan; 5Department of Occupational Therapy, School of Rehabilitation, Hyogo University of Health Sciences, Kobe, Japan; 6School of Pharmacy, Hyogo University of Health Sciences, Kobe, Japan; 7Department of General Medicine and Community Health Science, Hyogo College of Medicine Sasayama Medical Center, Sasayama, Japan Objectives: Recently, isotemporal substitution has been developed to substitute activity time for an equivalent amount of another activity. This study employed this method to demonstrate the effects of replacing sedentary behavior (SB) time with an equivalent amount of light-intensity physical activity (LPA) and moderate-to-vigorous intensity physical activity (MVPA) on the risk for different severities of frailty.Methods: A total of 886 older adults (average age 73.6 years, female 70%) participated in this cross-sectional study. Frailty status was assessed according to the cardiovascular health study criteria.Main outcome measures: Wrist-worn accelerometers were used to measure SB, LPA, and MVPA. Isotemporal substitution models were applied to show the estimated effects of substituting 30 min of SB with an equal amount of time spent in LPA or MVPA on the risk for pre-frailty and frailty.Results: The physical activity level and SB were not associated with the incidence of pre-frailty. However, a 16% (OR: 0.84; 95% CI: 0.78–0.90) and 42% (OR: 0.58; 95% CI: 0.37–0.92) decrease in frailty risk was noted when SB was substituted with LPA and MVPA, respectively, in the crude model. In the adjusted model, the significant effect was sustained for LPA (OR: 0.86; 95% CI: 0.80–0.92) but not for MVPA (OR: 0.74; 95% CI: 0.47–1.17).Conclusions: This study indicates that replacing 30 min of SB with an equivalent amount of LPA decreases the risk for frailty in older adults. Moreover, increasing LPA seems more feasible than increasing MVPA in older adults, with substantial benefit. Keywords: isotemporal substitution, frailty, physical activity, sedentary behavior

Published
2018

10. Strain deformation in GaAs/GaAsBi core-shell nanowire heterostructures.

Author

Matsuda, T., Takada, K., Yano, K., Shimomura, S., and Ishikawa, F.

Subjects
NANOWIRES, GALLIUM arsenide transistors, X-ray diffraction, LATTICE constants, NANOSTRUCTURED materials
Abstract

We present the growth and strain deformation of sharp-facetted GaAs/GaAsBi core–shell heterostructure nanowires on a Si (111) substrate. The nanowires have a 90 nm wide GaAs core surrounded by an 80 nm thick GaAsBi shell. The sample was analyzed using microbeam synchrotron x-ray diffraction to resolve the local strain status at the GaAs/GaAsBi heterointerface. GaAsBi showed identical lattice constants for its vertical and lateral lattice planes. From the lattice constants, the Bi concentration in GaAsBi was estimated to be approximately 1.3%. In contrast, the GaAs core showed biaxial strain deformation, exhibiting an enlarged vertical lattice constant identical to that of the GaAsBi shell. These layers are coherently grown at the sidewalls of the nanowires, preserving identical vertical lattice constants between the constituent layers in the heterostructure. [ABSTRACT FROM AUTHOR]

Published
2019
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50. Interface-induced peculiar aggregation states of polyisoprene with inorganic material

Author

Inutsuka M., IRC 2016, The Society of Rubber Science and Technology, Japan, Kitakyushu, Japan, 24-28 Oct. 2016, Keiji Y., Shimomura S., Tanaka K., Yamada N.L., Inutsuka M., IRC 2016, The Society of Rubber Science and Technology, Japan, Kitakyushu, Japan, 24-28 Oct. 2016, Keiji Y., Shimomura S., Tanaka K., and Yamada N.L.

Abstract

Peculiar aggregation structure of cis-1,4-polyisoprene (PI) at quartz interface was discussed. Cross-linked PI films were prepared by spin-coating from a toluene solution of PI and photo-crosslinker onto quartz substrates and following an ultraviolet treatment. The depth profile of the PI volume fraction in the film swollen in deuterated hexane was evaluated by neutron reflectometry. We found that there are thin hardly-swollen layer at the substrate interface and less swollen intermediate layer on it. These interfacial layers should be associated with the “tightly adsorbed” and “loosely adsorbed” rubber layers in previous reports., Peculiar aggregation structure of cis-1,4-polyisoprene (PI) at quartz interface was discussed. Cross-linked PI films were prepared by spin-coating from a toluene solution of PI and photo-crosslinker onto quartz substrates and following an ultraviolet treatment. The depth profile of the PI volume fraction in the film swollen in deuterated hexane was evaluated by neutron reflectometry. We found that there are thin hardly-swollen layer at the substrate interface and less swollen intermediate layer on it. These interfacial layers should be associated with the “tightly adsorbed” and “loosely adsorbed” rubber layers in previous reports.

Published
2016

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