44 results on '"Shim, Jae-Phil"'
Search Results
2. Performance of flexible In0.7Ga0.3As MOSFETs by utilizing liquid polyimide (LPI) transfer with effective mobility of 3,667 cm2/V-s
3. Effect of Trap Behavior on the Reliability Instability of Metamorphic Buffer in InAlAs/InGaAs MHEMT on GaAs
4. Effect of in-situ Zn doping on suppression of phase separation in In Al1−As epitaxial layer on InP(001) grown by MOCVD
5. Effect of In-Situ Zn Doping on Suppression of Phase Separation in in X Al1− X as Epitaxial Layer on Inp(001) Grown by Mocvd
6. Electrical characteristics of metal–semiconductor–metal (MSM) varactors fabricated on In0.53Ga0.47As/InAs/In0.53Ga0.47As composite channel HEMT structure
7. Fabrication and Characterization of In0.53Ga0.47As/InAs/In0.53Ga0.47As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate
8. High-Performance In0.53Ga0.47As/InAs/In0.53Ga0.47As Composite Channel Metamorphic HEMTs (MHEMTs) on GaAs Substrate
9. Demonstration of High Performance Flexible In0.7Ga0.3As MOSFETs Using Liquid Polyimide (LPI) Transfer
10. Improved efficiency of InGaN/GaN-based multiple quantum well solar cells by reducing contact resistance
11. Performance of Flexible In0.7ga0.3as Mosfets by Utilizing Liquid Polyimide (Lpi) Transfer with Effective Mobility of 3,667 Cm2/V-S
12. Fabrication and Characterization of In 0.53 Ga 0.47 As/InAs/In 0.53 Ga 0.47 As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate.
13. Demonstration of High Performance Flexible In 0.7 Ga 0.3 As MOSFETs Using Liquid Polyimide (LPI) Transfer.
14. Highly Stable Self-Aligned Ni-InGaAs and Non-Self-Aligned Mo Contact for Monolithic 3-D Integration of InGaAs MOSFETs
15. Heat Shunting by Innovative Source/Drain Contact to Enable Monolithic 3D Integration of InGaAs MOSFETs
16. Hybrid Full-Color Inorganic Light-Emitting Diodes Integrated on a Single Wafer Using Selective Area Growth and Adhesive Bonding
17. Impact of Ground Plane Doping and Bottom-Gate Biasing on Electrical Properties in In0.53Ga0.47As-OI MOSFETs and Donor Wafer Reusability Toward Monolithic 3-D Integration With In0.53Ga0.47As Channel
18. 45-4: Hybrid Integration of RGB Inorganic LEDs using Adhesive Bonding and Selective Area Growth
19. Low-Temperature Material Stacking of Ultrathin Body Ge (110)-on-Insulator Structure via Wafer Bonding and Epitaxial Liftoff From III–V Templates
20. Anisotropic surface morphology in a tensile-strained InAlAs layer grown on InP(100) substrates
21. Verification of Ge-on-insulator structure for a mid-infrared photonics platform
22. Double-gated ultra-thin-body GaAs-on-insulator p-FETs on Si
23. Heterogeneous Integration Toward a Monolithic 3-D Chip Enabled by III–V and Ge Materials
24. Heterogeneous integration toward monolithic 3D chip
25. Monolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission
26. Fabrication of InGaAs-on-Insulator Substrates Using Direct Wafer-Bonding and Epitaxial Lift-Off Techniques
27. Fabrication of a vertically-stacked passive-matrix micro-LED array structure for a dual color display
28. Fabrication and characterization of Pt/Al2O3/Y2O3/In0.53Ga0.47As MOSFETs with low interface trap density
29. Effects of high-dose gamma-ray irradiation on an In0.53Ga0.47As high electron mobility transistor
30. Size-controlled InGaN/GaN nanorod LEDs with an ITO/graphene transparent layer
31. Domain Aligned Growth of Molybdenum Disulfide on Various Substrates by Chemical Vapor Deposition
32. Ag nanoparticles-embedded surface plasmonic InGaN-based solar cells via scattering and localized field enhancement
33. Investigation of properties of InGaN-based vertical-type solar cells with emission wavelengths in ultraviolet-blue-green regions
34. Effect of indium composition on carrier escape in InGaN/GaN multiple quantum well solar cells
35. Thin Ni film on graphene current spreading layer for GaN-based blue and ultra-violet light-emitting diodes
36. Improved photovoltaic effects in InGaN-based multiple quantum well solar cell with graphene on indium tin oxide nanodot nodes for transparent and current spreading electrode
37. Efficiency improvement in InGaN-based solar cells by indium tin oxide nano dots covered with ITO films
38. Au nanoparticle-decorated graphene electrodes for GaN-based optoelectronic devices
39. A self-assembled Ag nanoparticle agglomeration process on graphene for enhanced light output in GaN-based LEDs
40. Improved Photovoltaic Effects of a Vertical-Type InGaN/GaN Multiple Quantum Well Solar Cell
41. InGaN-Based p–i–n Solar Cells with Graphene Electrodes
42. Effect of III-nitride polarization on V OC in p-i-n and MQW solar cells
43. Improved Efficiency by Using Transparent Contact Layers in InGaN-Based p-i-n Solar Cells
44. Fabrication and Characterization of In 0.53 Ga 0.47 As/InAs/In 0.53 Ga 0.47 As Composite Channel Metamorphic HEMTs (mHEMTs) on a GaAs Substrate.
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.