Recent demands of higher integration in ultra large scale integrations (ULSIs) have accelerated shrinking of their devices to the size of nanometer scale. A major concern in nanoscale metal oxide semiconductor (MOS) devices is generation of depletion layers in poly Si gate films due to the strong electric field inherent in thin gate oxide MOS devices. Nickel monosilicide (NiSi) has been an attractive alternate since it has a lower resistivity [1,2]. So far NiSi has been formed with Ni deposition followed by a post anneal up to 350 500 . However, the conventional method does not allow the low temperature process below 300 and the concentration control of Ni in the film was difficult. One of the present coauthors, on the other hand, has developed a metal formation process of Cu by metal chloride reduction chemical vapor deposition (MCR-CVD) [3]. In the present work, we have newly developed a unique method of Ni silicidation with a Cl plasma containing NiCl based on MCR-CVD. The present technique enables the low temperature process below 300 and the concentration control of Ni in the grown film. We show a schematic of MCR-CVD system for the Ni silicidation in Fig. 1. A Ni solid source was placed at a certain distance in front of a substrate in a reaction chamber. Pure Cl2 gas diluted with a noble gas was introduced into the reaction chamber and the processed gas was evacuated through a variable conductance valve to keep the pressure at constant pressures below 1x10 Torr. The plasma was generated by radio frequency power with a frequency of 13.56 MHz and powers exceeding 1 kW by an antenna. As a substrate we prepared poly Si/SiO2 overcoated Si wafers. The thicknesses of Si and SiO2 were 150nm and 8nm, respectively. During the process, the substrate temperature was set in the rage of 280-300 . We assume the present process is explained as follows. The Cl plasma generated by the RF antenna reacts with the Ni solid source; Ni + Cl* NiCl(gas). (1) The vaporized NiCl is transported and adsorbed on the Si substrate. Cl atoms in NiCl are extracted by surface Si and SiCl desorbs from the surface, NiCl + Si Ni + SiCl(gas). (2) In the course of the process, the delivered Ni is diffused into the poly Si film. We show a cross-sectional image of the poly Si/SiO2 overcoated Si wafers processed with the Cl plasma containing NiCl in Fig.2. The thickness of NiSi was 130nm, which is smaller than the initial thickness of the poly Si. This is because the Si atoms desorb as SiCl from the film and Ni is concentrated. In our experiment, we have confirmed that the concentration of Ni is possible by extending the process time. We also show the XRD data obtained from the processed wafer in Fig.4. We can see the Ni5Si2 and Ni2Si are generated in the film. We have also confirmed the crystallinity can be changed from NiSi2 to Ni by changing the process time. The resistivity of the film was 57 ·cm, suggesting the present technique is available for the fabrication of metal gate MOSs at near RT. References [1] S. Schmidt, T. Mollenhauer, H.D.B. Gottlob, T. Wahlbrink, J.K. Efavi, L. Ottaviano, S. Cristolveanu, M.C. Lemmne, H. Kurz, Microelectronic Eng. 82(2005)497. [2] J. Kedzierski, D. Boyd, P. Ronshim, S. Zafar, J. Newbury, J. Otto, C. Canral Jr., M. Ieong, W. Haensch, IEDM Tech. Dig. (2003)315. [3] Y.Ohba, H.Sakamoto, Y.Ogura, N.Yahata, T.Nishimori and K.Hatayama, Jpn. J. Appl. Phys. 42 (2003) 6820.