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In this letter, a frequency-tunable rectifier in the $C$ -band designed by a hybrid semiconductor integrated circuit (HySIC) concept is proposed. A GaAs monolithic microwave integrated circuit (MMIC) and a Si radio frequency integrated circuit (RFIC) were utilized as the HySIC configuration in the rectifier design. For the purpose of initial confirmation of this design validity, the GaAs and Si chips were fabricated and packaged onto the copper tungsten plate with gold plating. As measured results, frequency-tunable range from 3.82 to 4.55 GHz was measured. Maximum radio frequency (RF)–direct current (dc) conversion efficiency and output dc power in the measured power range from −10.0 to 17.8 dBm were 28.7% and 17.3 mW, respectively.

資料番号: SA1190069000

形態: カラー図版あり, Physical characteristics: Original contains color illustrations, 資料番号: PA1910062000

We succeeded in extending the decay time of terahertz electromagnetic waves from coherent longitudinal optical (LO) phonons in GaAs epitaxial layers with the use of fast atom bombardment, a treatment method for introducing defects and/or disorders at the surface. The decay time becomes long, up to 4.81 ± 0.15 ps, with the bombardment time of 4.0 min. This value is 2.4-times larger than the decay time of 2.04 ± 0.04 ps of the reference sample (untreated sample). We attribute the origin of the present phenomenon to the fact that the reduction of the photogenerated carrier scattering effect on the coherent LO phonon, which is caused by the presence of the surface defects and disorders formed by the fast atom bombardment, results in the extending of the decay time of the terahertz wave from the coherent LO phonon.

We report on the irreversible and reversible resistance changes for γ-ray irradiation in amorphous GeTe thin films with Ag electrodes. The γ-ray irradiation at a dose of 1 kGy irreversibly decreased the DC resistance by two orders of magnitude. The irreversible resistance change was caused by the formation of a conductive region that consisted of Ag-Te compounds. In-situ real-time DC resistance and AC impedance measurements revealed reversible variations in several electrode structures with DC resistances ranging widely from about 10 kΩ to about 5 MΩ. The DC resistance decreased by 2–5% with a time constant of about 3–7 min following the γ-ray irradiation with a dose rate of 0.5–2 kGy/h, and recovered on interruption. The AC impedance measurement was analyzed with a simple equivalent circuit consisting of a parallel RC circuit of the Ag-diffused GeTe matrix, connected serially to the interface resistance. The interface resistance and the capacitance of the matrix exhibited a fast reversible variation, which is explained by trapping and detrapping of carriers in the charged defects formed by the Ag re-diffusion. The resistance of the matrix showed a slow reversible variation with a time constant of 7 min, similar to the DC resistance. The slow reversible variation is attributed to the growth and dissolution of the conductive region caused by the Ag re-diffusion.

For the first time, we propose a combination of coupled defected ground structure (DGS) resonators for wireless power transfer and coupled Figure-8 inductors for information transfer. This combination allows the realization of a simultaneous compact wireless power and information transfer (WPIT). Each set of the DGS resonators and the Figure-8 inductors are located on the same plane. However, they show negligible coupling due to the coupling cancellation mechanism of the Figure-8 inductors. Hence, high isolation can be achieved between the power and information channels. A prototype is fabricated for operation at 50 MHz and 100 MHz. The overall area of the TX/RX is 30 mm × 30 mm and are separated by 14 mm. The measured efficiencies are 78% and 76% at 50 MHz and 100 MHz, respectively, and the isolation is more than 34 dB.

The 24 GHz communication system was demonstrated with wireless multi-sensors by wirelessly powering at 5.8 GHz. The wireless sensors for health monitoring in a space vehicle work as the sensors of temperature, humidity, acceleration, illuminance, battery voltage and sound in this study. Under output power of 30W from a GaN transmitter, a GaAs rectifier of energy harvester was operated with more than 80% RF-DC conversion efficiency.

This paper analyzes and optimizes the structure of gallium nitride (GaN) planar Schottky barrier diode (SBD) to maximize the rectifier RF-DC conversion efficiency (PCE) and the operating dynamic range. The analysis indicates a small series resistance and a small zero-bias junction capacitance were needed to improve the wide dynamic range performance of the rectifier circuit. The prototype single-shunt rectifiers using the proposed GaN SBDs for evaluation achieves a conversion efficiency of more than 80% at an input power of 40dBm at 5. 8GHz. The high efficiency design rectifier achieves 87% peak PCE with 23dB dynamic range. The wide dynamic range design rectifier achieves 78% peak PCE with 32dB dynamic range.

Accepted: 2019-01-18, 資料番号: SA1005188000

Accepted: 2018-01-19, 資料番号: SA1180311000

This paper demonstrates fundamental evaluation results of a C-band rectifier using gallium nitride (GaN) high electron mobility transistor (HEMT). To achieve rectification at high power range, the GaN HEMT is utilized. TGF2023-2-05 of Qorvo is used for the HEMT. A rectifier circuit is designed on a RO4350B substrate. Only fundamental wave matching is considered. The designed rectifier is fabricated and measured. Maximum rectification efficiency of 44.8 % at 5.78 GHz while the load resistance is $20\Omega$ is obtained from the measurement. Maximum output DC power is 9661 mW when RF input power is 44.2dBm.

In this paper, a wireless sensor system for spacecraft health monitoring is demonstrated. The system combines data communication with microwave power transmission (MPT) in a single tone of 5.8 GHz frequency band using time division operation. The first contribution to Space-by-Wireless includes fabrication of low-cost lightweight prototype by use of Active Integrated Antenna (AIA) and Hybrid Semiconductor Integrated Circuit (HySIC). The second one is to introduce a selector which allows a wide range of RF input power and automatically switches the rectifiers so as to improve the RF-DC conversion efficiency of wireless sensors. The experimental results show the feasibility of simultaneous data sending and power transmission by conducting the proposed system.

An X-band, 15-W-class gallium nitride (GaN) solid-state power amplifier (SSPA) for the 50-kg-class ultrasmall deep-space probe PROCYON has been demonstrated in deep space for the first time. PROCYON was launched on December 3, 2014, as a subpayload of the Hayabusa 2 spacecraft. The GaN SSPA consists of three-stage, single-end amplifiers. The final-stage GaN high-power amplifier, which dominates the characteristics of the SSPA, achieves a maximum drain efficiency of 55.8% at 8.4 GHz. The fabricated SSPA using this GaN high-power amplifier has dimensions of 150 x 120 x 62 mm and weighs 1.5 kg, and its space applicability was confirmed through space environmental tests. For more than 2450 h of continuous operation in deep space, the GaN SSPA has achieved an average output power of 41.7 dBm (14.8 W), with standard deviation of 0.12 dB, maximum overall efficiency of 35.7%, and average efficiency of 33.8%. To the authors' knowledge, this is the highest efficiency of all proven X-band onboard SSPAs.

Use of dual frequency bands is one solution of the stable and continuous wireless sensor system operations for aerospace applications. The operation by dual beam wireless power transfer provides wireless power and information transfer, resulting in stable and sustainable operation. To realize the proposed system, a 2.45/5.8-GHz concurrent dual-band rectifier was designed and demonstrated in this paper. The proposed rectifier employed a spurline notch filter as an output filter and a $\lambda$/4 open stub at 8.25 GHz connected at diode cathode to control the harmonic signals, resulting in high efficiency operation at any conditions. The fabricated prototype rectifier achieved the RF-DC conversion efficiencies of 64.8% at 2.45GHz, 64.2% at 5.8GHz, and 67.9% at concurrent operation. To satisfy various applications for the wireless sensor network, behavior of the proposed rectifier was analyzed and investigated. The investigation clarified the rectifier operation with various signal conditions, such as different magnitude two-tone input signals, combination of CW and modulated signals, etc.

This paper presents a C-band Hybrid Semiconductor Integrated Circuit (HySIC) rectifier with a Gallium Nitride (GaN) Shottky barrier diode and silicon (Si) matching circuit for RF energy harvesting. The HySIC rectifier is used for supplying driving power to wireless sensor network systems in spacecraft. A high-functional, small-size, and low-cost rectifier was fabricated by combining GaN, which exhibits high resistivity to cosmic rays, and Si, which provides excellent integration technology. Based on the measurement results of the GaN diode, the HySIC rectifier was fabricated. The size of rectifier was $\pmb{3.9} \ \mathbf{mm} \pmb{\times 8.1}\ \mathbf{mm}$ and its maximum conversion efficiency was obtained with 21.7% in the C-band.

This paper describes the pulse operation characteristics of GaN radar amplifiers for space and civil use. A single-ended GaN amplifier was fabricated using a single die and a printed circuit board and operated with maximum output power of 70.8 W, gain of 8.5 dB, and DC-RF efficiency of 38.5% at 9.5 GHz. The amplifier operated under a pulse width of 10 μs and duty ratio of 10%. A parallel-combined amplifier generated 125.9 W output and 31.5% efficiency under the same conditions as a single-ended amplifier. The developed GaN amplifiers are applicable to the tracking radar for the Hayabusa 2 re-entry capsule and search radars for the marine use.

This paper proposes and demonstrates the magnetic resonance beamforming wireless power transfer (WPT) system to expand transmission area. The proposed WPT system employs the multiple input and single output (MISO) beamforming wireless transfer technique. The proposed $4\text{x}1$ MISO magnetic resonance WPT system improves its transmission efficiency with the beamforming control technique and expands the operation area. The simulation results indicate the proposed system widens 6.25 times area compared with that of the array system without the beamforming control and the maximum improved efficiency is 44%.

In this paper, novel ICs made by different types of semi-conductors as the hybrid semiconductor integrated circuit, HySIC, are introduced. A C-band compact full Si rectifier and a HySIC RF rectifier operating at 5.8 GHz were described using 0.18μm Si CMOS process and chip-to-wafer bonding. From them, RF -DC conversion efficiencies were measured as about 25% and 10%, respectively. Further, a wide power-range HySIC RF energy harvester by combining the rectifiers implemented on the Si substrate was made and the fundamental data were successfully obtained

著者人数: 270名（所属. 宇宙航空研究開発機構宇宙科学研究所(JAXA)(ISAS): 高橋, 忠幸; 国分, 紀秀; 満田, 和久; Baluta, Chris; 坂東, 信尚; 堂谷, 忠靖; 海老沢, 研; 林, 克洋; 廣瀬, 和之; 飯塚, 亮; 石田, 学; 石川, 久美; 石村, 康生; 岩井, 将親; 岩田, 直子; 河野, 太郎; 川崎, 繁男; 小山, 志勇; 前田, 良知; 峯杉, 賢治; 中川, 貴雄; 夏苅, 権; 小川, 博之; 小川, 美奈; 太田, 方之; 岡崎, 健; 尾崎, 正伸; 坂井, 真一郎; 鮫島, 寛明; 佐藤, 悟郎; 佐藤, 理江; 柴野, 靖子; 志田, 真樹; 嶋田, 貴信; Simionescu, Aurora; 菅原, 泰晴; 竹井, 洋; 田村, 隆幸; 田中, 靖郎; 田代, 信; 冨田, 洋; 辻本, 匡弘; 上田, 周太朗; 上野, 史郎; 和田, 篤始; 渡辺, 伸; 山田, 隆弘; 山崎, 典子）, Number of authors: 270 (Affiliation. Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (JAXA)(ISAS): Takahashi, Tadayuki; Kokubun, Motohide; Mitsuda, Kazuhisa; Baluta, Chris; Bando, Nobutaka; Dotani, Tadayasu; Ebisawa, Ken; Hayashi, Katsuhiro; Hirose, Kazuyuki; Iizuka, Ryo; Ishida, Manabu; Ishikawa, Kumi; Ishimura, Kosei; Iwai, Masachika; Iwata, Naoko; Kawano, Taro; Kawasaki, Shigeo; Koyama, Shu; Maeda, Yoshitomo; Minesugi, Kenji; Nakagawa, Takao; Natsukari, Chikara; Ogawa, Hiroyuki; Ogawa, Mina; Ohta, Masayuki; Okazaki, Tsuyoshi; Ozaki, Masanobu; Sakai, Shinichiro; Sameshima, Hiroaki; Sato, Goro; Sato, Rie; Shibano, Yasuko; Shida, Maki; Shimada, Takanobu; Simionescu, Aurora; Sugawara, Yasuharu; Takei, Yoh; Tamura, Takayuki; Tanaka, Yasuo; Tashiro, Makoto; Tomida, Hiroshi; Tsujimoto, Masahiro; Ueda, Shutaro; Ueno, Shiro; Wada, Atsushi; Watanabe, Shin; Yamada, Takahiro; Yamasaki, Noriko Y.), Accepted: 2018-02-05, 資料番号: SA1170333000

Microwave components, prototypes of 4×4 transmitting active integrated antenna array(AIAA) and 2×2 receiving array with direction of arrival function operating at the X-band were demonstrated in this paper. For the components of the satellite on-board tracking system, a wideband and high gain low noise amplifier (LNA) as well as the compact planar antenna were fabricated using thin substrates. High isolation between the transmitting signal and the receiving signal was achieved for the good satellite tracking system. Good agreement on measured antenna patterns with the theoretical ones was obtained.

This paper proposes and demonstrates a novel wide dynamic range rectifier. The proposed rectifier consists of two rectifying circuits in parallel, an asymmetrical output impedance power divider for RF input signal, and a DC combiner. The asymmetric power divider sequentially distributes the RF signal to the rectifier for high input power from the rectifier for low input power without switch devices, according as the input signal power level increases. The fabricated 2.45 GHz rectifier verified the proposed technique and expanded the operating input power range. The fabricated rectifier demonstrated more than 25dB dynamic range with an efficiency of higher than 30%. The maximum efficiency of the rectifier achieved 47.5% at 15dBm input power.

A compact C-band energy harvester is designed, test fabricated, and measured. An RF hybrid semiconductor integrated circuit (RF-HySIC) rectifier was fabricated by comprising a Si RFIC matching circuit and a GaN diode. The energy harvester at 5.8-GHz was made in a multi-circuit fashion under a wide input power range and input power control by field-effect transistor switch. The maximum RF-DC conversion efficiencies from a proto type of RF-HySIC rectifier with 50% and 13% were achieved at 5.1 and 5.8 GHz, respectively.

This paper demonstrates fundamental evaluation results of a C-band rectifier using Si substrate for HySIC application. Usage of the Si substrate is attractive for future integration with other mixed signal circuit. Because of large loss tangent of the Si substrate, applicability as a circuit substrate to the C-band rectifier is discussed. Two types of the rectifier, conventional printed circuit board and the Si substrate, are designed and fabricated. Maximum rectification efficiency of 10.4 % at 5.39 GHz while the load resistance is 20 Ω is obtained from the measurement.

This paper reports on a rectifier with 100 mW class dc output at 5.8 GHz using a gallium nitride (GaN) shottly barrier diode and silicon (Si) matching circuit. The originality of the study lies in its adaptation of the hybrid semiconductor integrated circuit (HySIC) technology that utilizes different types of semiconductors. We have completed the basic steps for developing a rectifier based on the HySIC technology. A nonlinear measurement system of GaN diodes with a jig was constructed and an equivalent circuit model of the diode was established. Based on the diode model, a Si matching circuit was designed. The size of the HySIC rectifier was 3.9 mm×9.5 mm. The RF-dc conversion efficiency of the HySIC rectifier was 10.3% at 5.8 GHz.

This paper reports our precise measurement of a gallium nitride (GaN) schottky diode and our diode model for designing a rectifier at 5.8 GHz. The originality in this study is the estimation of the measurement uncertainty of the GaN diode and its propagation to the diode model, and the calculation of the uncertainty of the parameters in this model. The relative expanded uncertainty (95 % confidence level) of the measured impedance is 61 % for the real part and 17 % for the imaginary part. Applying a circuit with a resistor and a capacitor in parallel as the diode model, the expanded uncertainties of the resistor and capacitor are approximately 70 % and 17 %, respectively. This result implies that the sensitivity coefficients of the resistor are larger than those of the capacitor.

Wireless Communication and Power Transmission (WiCoPT) is a technology that enables to transfer data and power simultaneously. This paper analyzes and clarifies the impact of input modulated signals on the RF-DC power conversion behavior of the rectifier. The RF-DC power conversion efficiency (PCE) was characterized by input power, symbol rate, and roll-off factor of the modulated input signal. On the low symbol rate signal, the impact of the peak to average power ratio (PAPR) value on the PCE is low, while the impact of PAPR value on the PCE is high on the high symbol rate signal. In addition, the optimal combination of the symbol rate and the roll-off factor greatly improves the RF-DC PCE. Finally, the paper proposes the channel bandwidth as an index of the PCE.

A focal plane based on MKID has been designed for cosmic microwave background (CMB) B-mode polarization experiments. We are designing and developing a focal plane with broadband corrugated horn array, planar OMT, 180 degree hybrid, bandpass filters, and MKIDs. The focal plane consists of 3 octave bands (55 - 108 GHz, 80 - 160 GHz, 160 - 320 GHz), 10 hexagonal modules. Broadband corrugated horn-array has been directly machined from an Al block and measured to have a good beam shape which is consistent with electromagnetic field simulations in octave bands. The horn array is designed to be low standing-wave, light weight, and electromagnetic shield. The broadband 4 probes ortho-mode transducer (OMT) is fabricated on Si membrane of an SOI wafer. A broadband 180 degree hybrid made with coplanar waveguide (CPW) is used to reduce higher modes of the circular waveguide. Two bandpass filters of each polarization are patterned with Nb microstrip. A prototype of the broadband corrugated horn coupled MKIDs has been fabricated and tested.

This paper summarizes the uncertainty estimation for gallium nitride shottky diode based on vector network analyzer measurements at 5.8 GHz. The results were traceable to the metrology standard of S-parameter at NMIJ. Considering the uncertainty of the measurements, bias voltage must be applied over 2 V in measuring bias voltage dependence of reflection coefficient. The measurement uncertainty was propagated from reflection coefficient to impedance. As a result, the expanded uncertainty of real and imaginary part of impedance were 0.56 Ω and 0.57 Ω at 5.8 GHz, respectively.

This paper investigated coexistence possibility of high efficiency Wireless Power Transfer (WPT) system and high-speed communication system in Short-range Wireless Communication and Power Transfer (WiCoPT) system. To realize both high power transfer efficiency and high data rate, this paper proposes the WiCoPT system, which is supported by the Short-Range Multiple Input and Multiple Output (SR-MIMO) transfer technique. Relationship between the antenna element spacing and the transmission performance was analyzed to clarify the maximum performances of the power transfer efficiency and the data rate. The paper analyzed and demonstrated a 4×4 MIMO WiCoPT system. The numerical analysis indicates that the antenna element spacing to maximize the power transfer efficiency is different from that to realize the highest channel capacity. In addition, the analysis clarifies there are two suitable antenna element spacing for high power transfer operation. Therefore, our proposing system chose the antenna element spacing to realize the second peak for the high-level power transfer efficiency simultaneously. The 4×4 MIMO WiCoPT system achieved a channel capacity of 45 bit/s/Hz and a power transfer efficiency of 64.8 %.