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To realize the refractive index dispersion accurately is essential for the design of optical devices. In this paper, we study hexagonal ZnO microrod cavities. We measure angle-resolved photolumines...

The CsPbBr3 microwires with unique isosceles right triangle cross-sections are commonly observed via chemical vapor deposition method. In this work, we study the correlations between measured multi-mode lasing behaviors and the simulation of the mode patterns inside the triangular-rod microcavity. We confirm that lasing action with higher-order transverse modes can well sustain, even when these modes experience large optical loss due to the isosceles triangle cross-section. By comparing the experimental and simulation results, the higher-order transverse modes tend to show up prior to the fundamental transverse modes for wider microwires. We attribute this behavior to the nonuniform field distribution caused by the high absorption efficiency of CsPbBr3. We also elaborate on the difficulties to sustain the whispering gallery mode in the CsPbBr3 triangular-rod microcavity, which implies that the lateral dimension and geometry of the cavity should be considered carefully for the future design of low threshold wire-based laser devices.

We realized a single-mode laser with an ultra-high quality factor in individual cesium lead bromide (CsPbBr3) perovskite micro-hemispheres fabricated by chemical vapor deposition. A series of lasing property analysis based on cavity size was reported under this material system. Due to good optical confinement capability of the whispering gallery resonant cavity and high optical gain of CsPbBr3 perovskite micro-hemispheres, single-mode lasing behavior was achieved with an ultra-high quality factor as large as 11,460 at room temperature. To study in detail the physical effects between lasing threshold and cavity, a set of cavity size dependence photoluminescence analyses were performed. We found that the lasing threshold increases while the cavity size decreases. Time-resolved PL analysis was conducted to confirm the relation between cavity size and lasing threshold. The larger cavity stands for longer PL lifetime and indicates easier-to-achieve carrier population inversion. Strong Purcell enhancement could be further investigated by the spontaneous emission coupling factor β and internal quantum efficiency as a function of cavity size. A high β-factor of 0.37 could be obtained from a 2.2 μm diameter hemisphere microcavity and a high Purcell factor of 14 in a 1.9 μm diameter hemisphere microcavity showing strong Purcell enhancement effect in our system.

We construct the ZnO-based superluminescent light-emitting diodes (SLEDs) by spin-coating ZnO nano-particles onto p-GaN/sapphire substrate. By inserting another thin Al layer to form an n-ZnO/Al/n-ZnO/p-GaN sandwich structured SLD, the intensities of the photoluminescence and electroluminescence were greatly enhanced, which can be attributed to the surface plasmon resonance of this Al layer. The tendency of the intensities of the entire electroluminescence spectra shows a super-linearly behavior with increasing the forward bias. Besides, the spectral bandwidth is narrowed down enormously owing to the achievement of the SLD. Furthermore, the interfacial emissions between ZnO/GaN are effectively suppressed by partially oxidizing the Al layer.

We measure the optical model gain of single Zinc Oxide microrod by Variable Stripe Length method. The pick value of gain spectra in room temperature is well below the bandgap of bulk ZnO, which comes from exciton-exciton scattering, and it can be as a reference for the design of UV-devices.