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The radiative transition and nonradiative process have been studied for Ho 3+ ions in ZnS semiconductor. From the integrated emission intensity and excited state lifetime, the intensity uarameters of ZnS:Ho 3+ were obtained and radiation probabilities and lifetimes of Ho 3+ ion's nine energy levels were calculated. Nonradiative process among 5 G 6 , 3 K 8 , 5 F 2 , 5 F 3 and 5 S 2 ( 5 F 4 ) was investigated by measuring the emission intensity and fluorescence lifetime at differenttemperatures. 5 G 6 , 3 K 8 , 5 F 2 and 5 F 3 are in thermal equilibrium and there are 5 phononsparticipating in the multiphonon relaxation between 5 F 3 and 5 S 2 ( 5 F 4 ).