333 results on '"Shashkin, V. I."'
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2. Modification of the Ratio between sp2- to sp3-Hybridized Carbon Components in PECVD Diamond-Like Films
3. The Use of Pulsed Laser Annealing to Form Ohmic Mo/Ti Contacts to Diamond
4. Formation of Low-Resistivity Au/Mo/Ti Ohmic Contacts to p-Diamond Epitaxial Layers
5. Formation of Ohmic Contacts to a Diamond-Like Carbon Layer Deposited on a Dielectric Diamond Substrate
6. Ohmic Contacts to CVD Diamond with Boron-Doped Delta Layers
7. Plasma-Chemical Deposition of Diamond-Like Films onto the Surface of Heavily Doped Single-Crystal Diamond
8. Electron-electron interaction at decreasing $k_Fl$
9. Study of the Structural and Morphological Properties of HPHT Diamond Substrates
10. Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma
11. Does theory of quantum correction to conductivity agree with experimental data in 2D systems?
12. Low field negative magnetoresistance in double layer structures
13. Analysis of negative magnetoresistance. Statistics of closed paths. II. Experiment
14. New approach to analysis of negative magnetoresistance. The statistics of the closed paths
15. The new line of attack of analyses of NMR in 2D structures
16. Vertical Field-Effect Transistor with a Controlling GaAs-Based p–n Junction
17. Detectors Based on Low-Barrier Mott Diodes and Their Characteristics in the 150–250 GHz Range
18. Influence of the channel–gate barrier height on the detection properties of a field-effect transistor in the microwave and terahertz ranges
19. Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron
20. Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source
21. Microwave detector diodes based on InGaAs/AlGaAs/GaAs heterostructures.
22. Si3N4 layers for the in-situ passivation of GaN-based HEMT structures
23. On the radiation resistance of planar Gunn diodes with δ-doped layers
24. High-rate growth of InN films on fianite and sapphire substrates by metalorganic vapor phase epitaxy with plasma-assisted nitrogen activation
25. Electron State Symmetries and Optical Selection Rules in the (GaAs)m(AlAs)n Superlattices Grown along the [001], [110], and [111] Directions
26. Application of low-barrier metal-semiconductor-metal structures for the detection of microwave signals
27. Aspherical single-lens objective for radio-vision systems of the millimeter-wavelength range
28. On the Impact of Interaction Between the Matrix Elements in the 3-mm Wave Active Radiovision System on the Object Image Structure
29. Effect of rapid thermal annealing on the parameters of gallium-arsenide low-barrier diodes with near-surface δ-doping
30. Single-crystal GaN/AlN layers on CVD diamond
31. Near-field microwave tomography of planar semiconductor microstructures.
32. Growing InN films by plasma-assisted metalorganic vapor-phase epitaxy on Al2O3 and YSZ substrates in plasma generated by gyrotron radiation under electron cyclotron resonance conditions
33. Barrier-height modification in Schottky silicon diodes with highly doped 3D and 2D layers
34. Determining the structural parameters of a low-barrier diode with near-surface δ-doping from data on the temperature dependences of the current-voltage characteristics
35. Recharging dynamics of Al Nanoclusters in a GaAs matrix
36. Quantitative analysis of the elemental composition and electron concentration in AlGaN/GaN heterostructures with a two-dimensional electron channel by means of SIMS and C-V profiling
37. Optical monitoring of substrate temperature and etching speed of multilayered structures during plasmochemical etching
38. Analysis of diodes with a relatively low barrier in the microwave planar mixer
39. Analysis of GaN epilayers on sapphire substrates with GaN and AlN sublayers
40. A generalized theory of charge transport in low-barrier Mott diodes with near-surface δ-doping: Comparison with experimental data
41. Anisotropic piezoeffect in microelectromechanical systems based on epitaxial Al0.5Ga0.5As/AlAs heterostructures
42. Fabrication of nanocrystalline silicon layers by plasma enhanced chemical vapor deposition from silicon tetrafluoride
43. Solution of the problem of charge-carrier injection into an insulating layer under self-consistent boundary conditions at contacts
44. Modified slot antennas on high-permittivity substrates for the millimeter-wave range
45. Properties of Mott contacts with an ultralow metal-semiconductor barrier
46. Effect of B atoms on the properties of InAs quantum dots in the GaAs matrix
47. Optical monitoring of technological parameters in metal-organic vapor-phase epitaxy
48. Admittance and nonlinear capacitance of a multilayer metal-semiconductor structure
49. Current-voltage characteristics of a metal-semiconductor contact with a Mott barrier
50. Photoluminescence up to 1.6 μm of quantum dots with an increased effective thickness of the InAs layer
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