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333 results on '"Shashkin, V. I."'

8. Electron-electron interaction at decreasing $k_Fl$

Author

Minkov, G. M., Rut, O. E., Germanenko, A. V., Sherstobitov, A. A., Shashkin, V. I., Khrykin, O. I., and Zvonkov, B. N.

Subjects
Condensed Matter - Disordered Systems and Neural Networks
Abstract

The contribution of the electron-electron interaction to conductivity is analyzed step by step in gated GaAs/InGaAs/GaAs heterostructures with different starting disorder. We demonstrate that the diffusion theory works down to $k_F l\simeq 1.5-2$, where $k_F$ is the Fermi quasimomentum, $l$ is the mean free paths. It is shown that the e-e interaction gives smaller contribution to the conductivity than the interference independent of the starting disorder and its role rapidly decreases with $k_Fl$ decrease., Comment: 5 pages, 6 figures

Published
2002
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11. Does theory of quantum correction to conductivity agree with experimental data in 2D systems?

Author

Minkov, G. M., Rut, O. E., Germanenko, A. V., Sherstobitov, A. A., Shashkin, V. I., Khrykin, O. I., and Daniltsev, V. M.

Subjects
Condensed Matter - Disordered Systems and Neural Networks
Abstract

The quantum correction to the conductivity have been studied in two types of 2D heterostructures: with doped quantum well and doped barriers. The consistent analysis shows that in the structures where electrons occupy the states in quantum well only, all the temperature and magnetic field dependencies of the components of resistivity tensor are well described by the theories of quantum corrections. The contribution of electron-electron interaction to the conductivity have been determined reliably in the structures with different electron density. A possible reason of large scatter in experimental data concerning the contribution of electron-electron interaction, obtained in previous papers, and the role of the carriers, occupied the states of the doped layers, is discussed., Comment: 10 pages with 9 figures

Published
2001
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12. Low field negative magnetoresistance in double layer structures

Author

Minkov, G. M., Germanenko, A. V., Rut, O. E., Khrykin, O. I., Shashkin, V. I., and Danil'tsev, V. M.

Subjects
Condensed Matter - Disordered Systems and Neural Networks
Abstract

The weak localization correction to the conductivity in coupled double layer structures is studied both experimentally and theoretically. Statistics of closed paths has been obtained from the analysis of magnetic field and temperature dependencies of negative magnetoresistance for magnetic field perpendicular and parallel to the structure plane. The comparison of experimental data with results of computer simulation of carrier motion over two 2D layers with scattering shows that inter-layers transitions play decisive role in the weak localization., Comment: 5 PRB pages with 5 eps-figures, submitted to Phys.Rev.B

Published
2000
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13. Analysis of negative magnetoresistance. Statistics of closed paths. II. Experiment

Author

Minkov, G. M., Negashev, S. A., Rut, O. E., Germanenko, A. V., Khrykin, O. I., Shashkin, V. I., and Danil'tsev, V. M.

Subjects
Condensed Matter - Disordered Systems and Neural Networks
Abstract

It is shown that a new kind of information can be extracted from the Fourier transform of negative magnetoresistance in 2D semiconductor structures. The procedure proposed provides the information on the area distribution function of closed paths and on the area dependence of the average length of closed paths. Based on this line of attack the method of analysis of the negative magnetoresistance is suggested. The method has been used to process the experimental data on negative magnetoresistance in 2D structures with different relations between the momentum and phase relaxation times. It is demonstrated this fact leads to distinction in the area dependence of the average length of closed paths., Comment: 5 pages, 5 figures, to be published in Phys.Rev.B

Published
1999
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14. New approach to analysis of negative magnetoresistance. The statistics of the closed paths

Author

Minkov, G. M., Negashev, S. A., Rut, O. E., Germanenko, A. V., Khrykin, O. I., Shashkin, V. I., and Danil'tsev, V. M.

Subjects
Condensed Matter
Abstract

It is shown that a new kind of information can be extracted from the Fourier transform of negative magnetoresistance (MR) in 2D semiconductor structures. The procedure proposed provides the information on the area distribution function of the closed paths and on the area dependence of the mean length of closed paths $\bar{L} (S)$ . Based on this line of attack the method of analysis of the negative MR is suggested. The method is used for data treatment of negative MR in 2D structures. In previous version (cond-mat/9902038) we suppoused that the difference in area dependence of $\bar{L} (S)$ for structures investigated came from the difference in scattering ansotropy. The more detailed analysis shows that main reason for such difference is different relations between momentum and phase relaxation times., Comment: This paper has been significantly modified and placed in cond-mat/9912431

Published
1999

15. The new line of attack of analyses of NMR in 2D structures

Author

Minkov, G. M., Negashev, S. A., Rut, O. E., Germanenko, A. V., Khrykin, O. I., Shashkin, V. I., and Danil'tsev, V. M.

Subjects
Condensed Matter
Abstract

There was shown that Fourier transform of the negative magnetoresistance (NMR) which is due to interference correction to the conductivity contains the information about the area distribution function of the closed paths and about area dependence of the mean length of closed paths \bar{L}(S). Based on this line of attack we suggest the method of analysis of NMR and use it for data treatment of the NMR in 2D structure with doped barrier. There was shown that in structure investigated \bar{L}(S)dependence is determined by the scattering anisotropy., Comment: PostScript-format with figures

Published
1999

21. Microwave detector diodes based on InGaAs/AlGaAs/GaAs heterostructures.

Author

Vostokov, N. V., Revin, M. V., and Shashkin, V. I.

Subjects
MICROWAVE detectors, DIODES, NUCLEAR counters, AUDITING standards, MODULATION-doped field-effect transistors, MICROWAVE measurements, INDIUM gallium arsenide
Abstract

An original low-barrier diode n+-InGaAs/AlGaAs/n+-GaAs heterostructure was developed and grown by metalorganic vapor phase epitaxy. Growth conditions are practically the same as were used in standard pseudomorphic high-electron-mobility transistor technology. Test diodes were made on the basis of the heterostructure and their transport properties were studied. For comparison with experimental results, the transport characteristics of diodes were simulated in the framework of the combined thermionic-emission/diffusion theory. A useful method for the microwave measurements of diodes on a wafer was employed, which allows one to determine all the main parameters of the equivalent diode circuit and their detection characteristics. The diodes have a high quadratic nonlinearity parameter value (> 20 V−1) and small specific values of differential resistance (10−4 Ω cm2) and capacitance (10−7 F/cm2) at zero bias. The prospects of using the developed heterostructure to create highly sensitive microwave radiation detectors are shown. [ABSTRACT FROM AUTHOR]

Published
2020
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25. Electron State Symmetries and Optical Selection Rules in the (GaAs)m(AlAs)n Superlattices Grown along the [001], [110], and [111] Directions

Author

Kitaev, Yu. E., Panfilov, A. G., Tronc, P., Evarestov, R. A., Donchev, V., Ivanov, T. Z. V., Germanova, K., Vlaev, S., Miteva, A., Valcheva, E., Paskova, T., Kordina, O., Yakimova, R., Janzen, E., Zaluzny, M., Bondarenko, V., Aleshkin, V. Ya., Danil’tsev, V. M., Khrykin, O. I., Krasil’nik, Z. F., Revin, D. G., Shashkin, V. I., Kozyrev, A. B., Belyantsev, A. M., Malyarevich, A. M., Yumashev, K. V., Prokoshin, P. V., Artemyev, M. V., Gurin, V. S., Mikhailov, V. P., Saltiel, S., Buchvarov, I., Koynov, K., Tzankov, P., Iglev, Ch., Balkanski, Minko, editor, and Andreev, Nikolai, editor

Published
1997
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31. Near-field microwave tomography of planar semiconductor microstructures.

Author

Reznik, A. N., Vostokov, N. V., Vdovicheva, N. K., Korolyov, S. A., and Shashkin, V. I.

Subjects
SEMICONDUCTOR analysis, MICROWAVE devices, MICROSTRUCTURE, ELECTRIC conductivity, GALLIUM arsenide, ANTENNAS (Electronics), DIODES
Abstract

A method for determining the parameters of a layered semiconductor structure, using the data obtained by near-field microwave probing with a micron-size lateral resolution, was developed and tested experimentally. We have measured a frequency spectrum of the impedance of a coaxial antenna formed on a test structure surface. The corresponding inverse problem has been solved based on the quasistatic theory for the impedance of a monopole antenna interacting with a layered medium, which was proposed earlier [A. N. Reznik and S. A. Korolyov, J. Appl. Phys. 119, 094504 (2016)]. This method was applied to a low-barrier Mott diode structure with a nearly 100 nm thick undoped layer grown on a conducting substrate GaAs. Computer simulation allowed us to establish the optimal frequency intervals and estimate the accuracy of determining the structure parameters. Measurements were taken in the frequency range of 0.1-67 GHz on commercially available equipment. Three antennas with a radius of the central conductor of 5.5, 11, and 25 μm, respectively, were used. The accuracy of the experimental evaluation of the layer thickness d and conductivity σ was ~1-3%, and for the substrate conductivity, it came to about 15%. As an example, we also present the parameters σ and d in four points of the sample surface image. These data show strong lateral inhomogeneity of the structure under study. [ABSTRACT FROM AUTHOR]

Published
2017
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