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4. Fabrication of MoOx/c-Si/MgOx carrier selective heterojunction solar cell.

Author

Babu, Sneha, Sreena, S., Sharon, Antony, Rameeja, T. A. R., and Antony, Aldrin

Subjects
PHOTOVOLTAIC power systems, SOLAR cells, SILICON solar cells, HETEROJUNCTIONS, OPEN-circuit voltage, SPIN coating
Abstract

In recent years, the photovoltaic community has been paying much interest to solar cells with dopant-free carrier selective contacts. In such solar cells, the collection of carriers is achieved by introducing a band offset due to the asymmetry in band alignment with silicon. These dopant-free carrier selective contacts can be deposited on c-Si through simple, low-temperature techniques such as evaporation, spin coating, spray pyrolysis, etc. This work demonstrates the carrier selective potential of MoOx and MgOx films by fabricating Au/MoOx/n-Si/Ag and Al/MgOx/p-Si/Au heterojunction diodes, respectively. Both heterojunction structures showed good diode behavior in the dark. Then we fabricated a double heterojunction carrier selective solar cell with MoOx (where x is slightly less than 3) as the hole-selective layer (HSL) and MgOx/Al stack (where x is slightly less than 1) as the electron-selective layer (ESL) on the front and rear side of a planar n-type c-silicon substrate. The thermal evaporation technique was chosen for the deposition of MoOx and MgOx, as a low-cost fabrication method for the crystalline silicon solar cell. ITO was used as the transparent front contact, over which the Ag grid was deposited. The performance of the fabricated Ag/ITO/MoOx/n-Si/MgOx/Al double heterojunction solar cell was analyzed. A power conversion efficiency of 3.73 % was obtained with a short-circuit current density of 20 mA/cm2 and an open-circuit voltage of 410 mV. [ABSTRACT FROM AUTHOR]

Published
2023
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6. Resistive switching in ZnO/MoOx bilayer for non-volatile memory applications.

Author

Manoj, Sandra, Sharon, Antony, Subin, P. S., and Antony, Aldrin

Abstract

Memory technologies are essential for transferring and preserving data. As the digital age progressed, memory device size, speed and efficiency were tuned to address the new demands. Resistive random access memory (RRAM) devices are promising candidates for future memory applications and have many advantages, such as scaling, speed, and endurance over conventional flash memory. In this work, bilayer metal oxide (MoOx/ZnO) devices are fabricated with Ag and ITO as top and bottom electrodes and their resistive switching characteristics are investigated for non-volatile memory applications. I–V characteristics of the device are analysed for the characteristic pinched hysteresis loop where bipolar switching has been observed with set voltage at 1.1 V and reset voltage at - 0.8 V. The field-dependent migration of oxygen vacancies in metal oxide layers accounts for the bipolar switching mechanism. The conduction mechanism for ITO/ZnO/MoOx/Ag device is studied, revealing ohmic conduction in the low voltage region while space charge limited conduction dominates in the high voltage region. Furthermore, the fabricated device shows excellent retention. Conclusively, this study suggests that the device switches at comparatively lower voltages and has remarkable data retention properties with the addition of MoOx layer over ZnO layer. Since the device shows excellent endurance and data retention properties, the fabricated device can be a good candidate for non-volatile memory applications such as RRAM and neuromorphic computing. [ABSTRACT FROM AUTHOR]

Published
2023
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