Search

A CMOS-compatible, broadband, and polarization-independent edge coupler for efficient chip coupling with standard single-mode fiber is proposed. Three layers of a silicon nitride waveguide array with the same structures are used in the top oxide cladding of the chip to achieve high coupling efficiency and to simplify the mode transformation structure. Optimal total coupling loss at the wavelength of 1550 nm, − 0.49 d B for TE mode polarization and − 0.92 d B for TM mode polarization is obtained. The − 1 d B bandwidth is beyond 160 nm for TE mode polarization and ∼ 130 n m for TM mode polarization, respectively. A significant reduction in the packaging cost of silicon photonic chips is anticipated. Meanwhile, the structure holds vast potential for on-chip three-dimensional photonic integrations or fiber-to-chip, chip-to-chip optical interconnections.

A broadband and CMOS-compatible polarization beam splitter and rotator (PSR) built on the silicon nitride-on-silicon multilayer platform is presented. The PSR is realized by cascading a polarization beam splitter and a polarization rotator, which are both subtly constructed with an asymmetrical directional coupler waveguide structure. The advantage of this device is that the function of PSR can be directly realized in the SiN layer, providing a promising solution to the polarization diversity schemes in SiN photonic circuits. The chip is expected to have high power handling capability as the light is input from the SiN waveguide. The use of silicon dioxide as the upper cladding of the device ensures its compatibility with the metal back-end-of-line process. By optimizing the structure parameters, a polarization conversion loss lower than 1 dB and cross talk larger than 27.6 dB can be obtained for TM-TE mode conversion over a wavelength range of 1450 to 1600 nm. For TE mode, the insertion loss is lower than 0.26 dB and cross talk is larger than 25.3 dB over the same wavelength range. The proposed device has good potential in diversifying the functionalities of the multilayer photonic chip with high integration density.

We use ANN models to estimate the performance of latency-critical and delay-tolerant tasks when applying edge cooperation in EC-enabled EONs. Using the performance estimation, a resource allocation scheme is proposed to jointly optimize multiple performance.

In this work, we grew Bi 4 Ge 3 O 12 (BGO) crystals of two types by Bridgmen-Stockbarger technology in different temperature gradients and compared their optical transmissions and energy resolutions before and after ultraviolet irradiation. It was found that the optical transmissions and energy resolutions of the two types of BGO crystals are similar before UV-irradiation. After UV-irradiation, the optical transmissions at 480 nm of the first type of BGO crystals which were grown in higher temperature gradient cut down about 20% and their energy resolutions obviously deteriorated from about 12-18%. But the optical transmissions and energy resolutions of the second type of BGO crystals which were grown in lower temperature gradient keep unchanged on the whole. After 250°C/4h h annealing, the optical transmissions and energy resolutions of the second type of BGO crystals can be completely recovered, whereas the optical transmissions and energy resolutions of the first type of BGO crystals cannot be completely recovered until through 600 °C/8 h annealing. The reason for the difference between the first and second type of BGO crystals is discussed.