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Your search keyword '"Shao, Yongliang"' showing total 397 results
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397 results on '"Shao, Yongliang"'

1. Research on Thermal Safety of Fireworks in Air Transportation Based on Thermal Explosion Theory

Author

Ji, Lingling, Zhou, Jie, Shao, Yongliang, Angrisani, Leopoldo, Series Editor, Arteaga, Marco, Series Editor, Chakraborty, Samarjit, Series Editor, Chen, Shanben, Series Editor, Chen, Tan Kay, Series Editor, Dillmann, Rüdiger, Series Editor, Duan, Haibin, Series Editor, Ferrari, Gianluigi, Series Editor, Ferre, Manuel, Series Editor, Hirche, Sandra, Series Editor, Jabbari, Faryar, Series Editor, Jia, Limin, Series Editor, Kacprzyk, Janusz, Series Editor, Khamis, Alaa, Series Editor, Kroeger, Torsten, Series Editor, Li, Yong, Series Editor, Liang, Qilian, Series Editor, Martín, Ferran, Series Editor, Ming, Tan Cher, Series Editor, Minker, Wolfgang, Series Editor, Misra, Pradeep, Series Editor, Mukhopadhyay, Subhas, Series Editor, Ning, Cun-Zheng, Series Editor, Nishida, Toyoaki, Series Editor, Oneto, Luca, Series Editor, Panigrahi, Bijaya Ketan, Series Editor, Pascucci, Federica, Series Editor, Qin, Yong, Series Editor, Seng, Gan Woon, Series Editor, Speidel, Joachim, Series Editor, Veiga, Germano, Series Editor, Wu, Haitao, Series Editor, Zamboni, Walter, Series Editor, Tan, Kay Chen, Series Editor, and Easa, Said, editor

Published
2024
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36. Preparation of controllable double-selective etched porous substrate for HVPE growth of GaN crystals with excellent optical properties.

Author

Zhang, Baoguo, Hu, Haixiao, Yao, Xiaogang, Wu, Yongzhong, Shao, Yongliang, and Hao, Xiaopeng

Subjects
CRYSTAL optics, CRYSTAL growth, SEMICONDUCTOR materials, RESIDUAL stresses, THERMAL expansion
Abstract

Heteroepitaxial growth of GaN will inevitably generate a large number of defects; serious residual stress will be caused by the mismatch of the lattice and thermal expansion coefficient between the substrate and the GaN material, and eventually the crystal may be broken. We designed a double selective etching method, which can flexibly control the etching rate and degree of GaN substrates. And a hydrothermal etching buffer substrate (hydrothermal MOCVD GaN/Al2O3, HMGA) composed of a porous buffer layer with a weak connection between seed layer and a sapphire substrate was obtained. The 4-inch GaN crystal with excellent optical properties and a thickness of approximately 3 mm was successfully grown on the HMGA substrate. The crystal quality and optical quality of the as-obtained GaN crystal were greatly improved and the residual stress was reduced. At the same time, a metal–semiconductor–metal (MSM) structure ultraviolet (UV) photodetector was made using the as-obtained GaN crystal which showed good photoresponse in the UV band. These prove that the double selective etching technology has broad application prospects in heteroepitaxial growth of semiconductor materials. [ABSTRACT FROM AUTHOR]

Published
2023
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37. Crystallographic Orientation and Strain in GaN Crystals Grown on 6H-SiC and Sapphire Substrates.

Author

Shao, Yongliang, Hu, Haixiao, Zhang, Baoguo, Hao, Xiaopeng, and Wu, Yongzhong

Subjects
GALLIUM nitride, CRYSTALS, DISLOCATION density, RESIDUAL stresses, DIFFRACTION patterns, SAPPHIRES
Abstract

The crystallographic-orientation relationship between GaN crystals grown via hydride vapor phase epitaxy (HVPE) on 6H-SiC was investigated. This study employed electron backscatter diffraction (EBSD) Kikuchi diffraction patterns and pole figures to identify this relationship and calculate lattice mismatches. Comparing the misorientation of GaN crystals on different substrates along the growth direction using EBSD mapping, we identify the strain in GaN based on crystallographic-orientation results. Raman spectroscopy results correlate residual stress in GaN with lattice mismatches, aligning with our previous works. Residual stress of GaN on different substrates identified using PL spectrum also confirmed these results. The HRXRD characterized the dislocation density of GaN crystals grown on these substrates. [ABSTRACT FROM AUTHOR]

Published
2023
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