159 results on '"Shaneyfelt, M. R."'
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2. A Nonvolatile MOSFET Memory Device Based on Mobile Protons in the Gate Dielectric
3. Heavy Ion Testing at the Galactic Cosmic Ray Energy Peak
4. Simulation of SEU Cross-sections using MRED under Conditions of Limited Device Information
5. Non-volatile memory device based on mobile protons in SiO sub 2 thin films
6. Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits
7. Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal-oxide-semiconductor devices.
8. Thermal-Stress Effects and Enhanced Low Dose Rate Sensitivity in Linear Bipolar ICs
9. Origins of Total-Dose Response Variability in Linear Bipolar Microcircuits
10. Worst-Case Bias During Total Dose Irradiation of SOI Transistors
11. Correlation Between Co-60 and X-Ray Radiation-Induced Charge Buildup in Silicon-on-Insulator Buried Oxides
12. Single-Event Upset and Snapback in Silicon-on-Insulator Devices and Integrated Circuits
13. BUSFET - A Radiation-Hardened SOI Transistor
14. Use of COTS Microelectronics in Radiation Environments
15. Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance
16. Upsets in Erased Floating Gate Cells With High-Energy Protons
17. New Insights Gained on Mechanisms of Low-Energy Proton-Induced SEUs by Minimizing Energy Straggle
18. The Contribution of Low-Energy Protons to the Total On-Orbit SEU Rate
19. THE EFFECTS OF RADIATION AND CHARGE TRAPPING ON THE RELIABILITY OF ALTERNATIVE GATE DIELECTRICS
20. Hardness Assurance for Proton Direct Ionization-Induced SEEs Using a High-Energy Proton Beam
21. Radiation-induced resistance changes in TaOx and TiO2 memristors
22. Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Radiation Environments, Physical Mechanisms, and Foundations for Hardness Assurance
23. Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Test Guideline for Proton and Heavy Ion Single-Event Effects
24. Total ionizing dose and displacement damage effects on TaOx memristive memories
25. Statistical Analysis of Heavy-Ion Induced Gate Rupture in Power MOSFETs—Methodology for Radiation Hardness Assurance
26. Initial Assessment of the Effects of Radiation on the Electrical Characteristics of ${\rm TaO}_{\rm x}$ Memristive Memories
27. Proton-Induced Upsets in 41-nm NAND Floating Gate Cells
28. Current and Future Challenges in Radiation Effects on CMOS Electronics
29. A critical comparison of charge-pumping, dual-transistor, and midgap measurement techniques (MOS transistors)
30. Radiation Effects on Ytterbium- and Ytterbium/Erbium-Doped Double-Clad Optical Fibers
31. Charge Generation by Secondary Particles From Nuclear Reactions in BEOL Materials
32. Development of a Radiation-Hardened Lateral Power MOSFET for POL Applications
33. A New Technique for SET Pulse Width Measurement in Chains of Inverters Using Pulsed Laser Irradiation
34. Hardness Assurance Test Guideline for Qualifying Devices for Use in Proton Environments
35. Investigation of the Propagation Induced Pulse Broadening (PIPB) Effect on Single Event Transients in SOI and Bulk Inverter Chains
36. A new technique for SET pulse width measurement in chains of inverters using pulsed laser irradiation
37. Latent thermally activated interface-trap generation in MOS devices
38. Impact of Ion Energy and Species on Single Event Effects Analysis
39. New Insights Into Single Event Transient Propagation in Chains of Inverters—Evidence for Propagation-Induced Pulse Broadening
40. Proton- and Gamma-Induced Effects on Erbium-Doped Optical Fibers
41. Tungsten-filled silicone composites for moderating proton radiation effects in electronics
42. Total Ionizing Dose Hardness Assurance Issues for High Dose Rate Environments
43. Heavy Ion Energy Effects in CMOS SRAMs
44. Effects of Angle of Incidence on Proton and Neutron-Induced Single-Event Latchup
45. Statistical Analysis of the Charge Collected in SOI and Bulk Devices Under Heavy lon and Proton Irradiation—Implications for Digital SETs
46. Effects of Total Dose Irradiation on Single-Event Upset Hardness
47. Novel Application of Transmission Electron Microscopy and Scanning Capacitance Microscopy for Defect Root Cause Identification and Yield Enhancement
48. Observation of metal–oxide–semiconductor transistor operation using scanning capacitance microscopy
49. Chemical kinetics of mobile-proton generation and annihilation in SiO2 thin films
50. Non-volatile memory device based on mobile protons in SiO2 thin films
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