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In this study, we investigate the dynamics of dispersive photonic time crystals (PTCs) and their potential applications for controlling light-matter interaction. By employing the Lorentz-Drude model, we analyze theoretically and via numerical simulation the effects of periodic modulation of dispersion parameters, revealing the emergence of hybrid bandgaps from interaction of polaritonic branches with unique characteristics. Our study demonstrates that dispersive PTCs offer novel excitation channels and amplification possibilities, that require lower modulation frequencies compared to non-dispersive systems thus alleviating experimental challenges for the realization of PTCs in the optical regime. These findings pave the way for advancements in polaritonic lasing and resonant Raman scattering.

Large-scale optimization problems are prevalent in several fields, including engineering, finance, and logistics. However, most optimization problems cannot be efficiently encoded onto a physical system because the existing quantum samplers have too few qubits. Another typical limiting factor is that the optimization constraints are not compatible with the native cost Hamiltonian. This work presents a new approach to address these challenges. We introduce the adversarial quantum autoencoder model (AQAM) that can be used to map large-scale optimization problems onto existing quantum samplers while simultaneously optimizing the problem through latent quantum-enhanced Boltzmann sampling. We demonstrate the AQAM on a neutral atom sampler, and showcase the model by optimizing 64px by 64px unit cells that represent a broad-angle filter metasurface applicable to improving the coherence of neutral atom devices. Using 12-atom simulations, we demonstrate that the AQAM achieves a lower Renyi divergence and a larger spectral gap when compared to classical Markov Chain Monte Carlo samplers. Our work paves the way to more efficient mapping of conventional optimization problems into existing quantum samplers., Comment: 7 + 3 pages, 7 figures

Transparent conducting oxides are highly doped semiconductors that exhibit favourable characteristics when compared to metals, including reduced material losses, tuneable electronic and optical properties, and enhanced damage thresholds. Recently, the photonic community has renewed its attention towards these materials, recognizing their remarkable nonlinear optical properties in the near-infrared spectrum, a feature previously overlooked despite their long-standing application in photovoltaics and touchscreens. The exceptionally large and ultra-fast change of the refractive index, which can be optically induced in these compounds, extends beyond the boundaries of conventional perturbative analysis and makes this class of materials the closest approximation to a time-varying system, and a unique playground for studying a variety of novel phenomena within the domain of photon acceleration. Here we report the spatio-spectral fission of an ultra-fast pulse trespassing a thin film of aluminium zinc oxide with a non-stationary refractive index. By applying phase conservation to this time-varying layer, our model can account for both space and time refraction and explain in quantitative terms, the spatial separation of both the spectrum and energy. Our findings represent an example of extreme nonlinear phenomena on subwavelength propagation distances and shed light on the nature of several nonlinear effects recently reported not accounting for the full optical field distribution. Our work also provides new important insights into transparent conducting oxides transient optical properties which are critical for the ongoing research in photonic time crystals, on-chip generation of nonclassical states of light, integrated optical neural networks as well as ultra-fast beam steering and frequency division multiplexing

Plasmon resonance in metals represents the collective oscillation of the free electron gas density and enables enhanced light-matter interactions in nanoscale dimensions. Traditionally, the classical Drude model describes the plasmonic excitation, wherein the plasma frequency exhibits no spatial dispersion. Here, we show conclusive experimental evidence of the breakdown of the plasmon resonance and a consequent photonic metal-insulator transition in an ultrathin archetypal refractory plasmonic material, hafnium nitride (HfN). Epitaxial HfN thick films exhibit a low-loss and high-quality Drude-like plasmon resonance in the visible spectral range. However, as the film thickness is reduced to nanoscale dimensions, the Coulomb interaction among electrons increases due to the electron confinement, leading to the spatial dispersion of the plasma frequency. Importantly, with the further decrease in thickness, electrons lose their ability to shield the incident electric field, turning the medium into a dielectric. The breakdown of the plasmon resonance in epitaxial ultrathin metals could be useful for fundamental physics studies in transdimensional regimes and novel photonic device applications.

Nonlinear optical phenomena are at the heart of various technological domains such as high-speed data transfer, optical logic applications, and emerging fields such as non-reciprocal optics and photonic time crystal design. However, conventional nonlinear materials exhibit inherent limitations in the post-fabrication tailoring of their nonlinear optical properties. Achieving real-time control over optical nonlinearities remains a challenge. In this work, we demonstrate a method to switch third harmonic generation (THG), a commonly occurring nonlinear optical response. Third harmonic generation enhancements up to 50 times are demonstrated in zinc oxide films via the photoexcited state generation and tunable electric field enhancement. More interestingly, the enhanced third harmonic generation follows a quadratic scaling with incident power, as opposed to the conventional cubic scaling, which demonstrates a previously unreported mechanism of third harmonic generation. The THG can also be suppressed by modulating the optical losses in the film. This work shows that the photoexcitation of states can not only enhance nonlinearities, but can create new processes for third harmonic generation. Importantly, the proposed method enables real-time manipulation of the nonlinear response of a medium. The process is switchable and reversible, with the modulations occurring at picosecond timescale. Our study paves the way to boost or suppress the nonlinearities of solid-state media, enabling robust, switchable sources for nonlinear optical applications.

Single photon emitters (SPEs) hosted in hexagonal boron nitride (hBN) are essential elementary building blocks for enabling future on-chip quantum photonic technologies that operate at room temperature. However, fundamental challenges, such as managing non-radiative decay, competing incoherent processes, as well as engineering difficulties in achieving deterministic placement and scaling of the emitters, limit their full potential. In this work, we experimentally demonstrate large-area arrays of plasmonic nanoresonators for Purcell-induced site-controlled SPEs by engineering emitter-cavity coupling and enhancing radiative emission at room temperature. The plasmonic nanoresonator architecture consists of gold-coated silicon pillars capped with an alumina spacer layer, enabling a 10-fold local field enhancement in the emission band of native hBN defects. Confocal photoluminescence and second-order autocorrelation measurements show bright SPEs with sub-30 meV bandwidth and a saturated emission rate of more than 3.8 million counts per second. We measure a Purcell factor of 4.9, enabling average SPE lifetimes of 480 ps, a five-fold reduction as compared to emission from gold-free devices, along with an overall SPE yield of 21%. Density functional theory calculations further reveal the beneficial role of an alumina spacer between defected hBN and gold, as an insulating layer can mitigate the electronic broadening of emission from defects proximal to gold. Our results offer arrays of bright, heterogeneously integrated quantum light sources, paving the way for robust and scalable quantum information systems., Comment: 41 pages, 18 figures, supplementary information

The integration of solid-state single-photon sources with foundry-compatible photonic platforms is crucial for practical and scalable quantum photonic applications. This study investigates aluminum nitride (AlN) as a material with properties highly suitable for integrated on-chip photonics specifically due to AlN capacity to host defect-center related single-photon emitters. We conduct a comprehensive study of the creation and photophysical properties of single-photon emitters in AlN utilizing Zirconium (Zr) and Krypton (Kr) heavy ion implantation and thermal annealing techniques. Guided by theoretical predictions, we assess the potential of Zr ions to create optically addressable spin-defects and employ Kr ions as an alternative approach that targets lattice defects without inducing chemical doping effects. With the 532 nm excitation wavelength, we found that single-photon emitters induced by ion implantation are primarily associated with vacancy-type defects in the AlN lattice for both Zr and Kr ions. The emitter density increases with the ion fluence, and there is an optimal value for the high density of emitters with low AlN background fluorescence. Additionally, under shorter excitation wavelength of 405 nm, Zr-implanted AlN exhibits isolated point-like emitters, which can be related to Zr-based defect complexes. This study provides important insights into the formation and properties of single-photon emitters in aluminum nitride induced by heavy ion implantation, contributing to the advancement of the aluminum nitride platform for on-chip quantum photonic applications., Comment: The following article has been submitted to APL Quantum. After it is published, it will be found at AIP Publishing/APL Quantum

The distinctive characteristics of light such as high-speed propagation, low-loss, low cross-talk and power consumption as well as quantum properties, make it uniquely suitable for various critical applications in communication, high-resolution imaging, optical computing, and emerging quantum information technologies. One limiting factor though is the weak optical nonlinearity of conventional media that poses challenges for the control and manipulation of light, especially with ultra-low, few-photon-level intensities. Notably, creating a photonic transistor working at single-photon intensities remains an outstanding challenge. In this work, we demonstrate all-optical modulation using a beam with single-photon intensity. Such low-energy control is enabled by the electron avalanche process in a semiconductor triggered by the impact ionization of charge carriers. This corresponds to achieving a nonlinear refractive index of n2~7*10^-3m^2/W, which is two orders of magnitude higher than in the best nonlinear optical media (Table S1). Our approach opens up the possibility of terahertz-speed optical switching at the single-photon level, which could enable novel photonic devices and future quantum photonic information processing and computing, fast logic gates, and beyond. Importantly, this approach could lead to industry-ready CMOS-compatible and chip-integrated optical modulation platforms operating with single photons.

We demonstrate a sustainable, lithography-free process for generating non fading plasmonic colors with a prototype device that produces a wide range of vivid colors in red, green, and blue (RGB) ([0-1], [0-1], [0-1]) color space from violet (0.7, 0.72, 1) to blue (0.31, 0.80, 1) and from green (0.84, 1, 0.58) to orange (1, 0.58, 0.46). The proposed color-printing device architecture integrates a semi-transparent random metal film (RMF) with a metal back mirror to create a lossy asymmetric Fabry-P\'erot resonator. This device geometry allows for advanced control of the observed color through the five-degree multiplexing (RGB color space, angle, and polarization sensitivity). An extended color palette is then obtained through photomodification process and localized heating of the RMF layer under various femtosecond laser illumination conditions at the wavelengths of 400 nm and 800 nm. Colorful design samples with total areas up to 10 mm2 and 100 {\mu}m resolution are printed on 300-nm-thick films to demonstrate macroscopic high-resolution color generation. The proposed printing approach can be extended to other applications including laser marking, anti-counterfeiting and chromo-encryption.

A robust process for fabricating intrinsic single-photon emitters in silicon nitride has been recently established. These emitters show promise for quantum applications due to room-temperature operation and monolithic integration with the technologically mature silicon nitride photonics platform. Here, the fundamental photophysical properties of these emitters are probed through measurements of optical transition wavelengths, linewidths, and photon antibunching as a function of temperature from 4.2K to 300K. Important insight into the potential for lifetime-limited linewidths is provided through measurements of inhomogeneous and temperature-dependent homogeneous broadening of the zero-phonon lines. At 4.2K, spectral diffusion was found to be the main broadening mechanism, while time-resolved spectroscopy measurements revealed homogeneously broadened zero-phonon lines with instrument-limited linewidths., Comment: 21 pages, 10 figures

All optical switches offer advanced control over the properties of light at ultrafast timescales using optical pulses as both the signal and the control. Limited only by material response times, these switches can operate at terahertz speeds, essential for technology-driven applications such as all-optical signal processing and ultrafast imaging, as well as for fundamental studies such as frequency translation and novel optical media concepts such as photonic time crystals. In conventional systems, the switching time is determined by the relaxation response of a single active material, which is challenging to adjust dynamically. This work demonstrates that the zero-to-zero response time of an all-optical switch can instead be varied through the combination of so-called fast and slow materials in a single device. When probed in the epsilon-near-zero operational regime of a material with a slow response time, namely, plasmonic titanium nitride, the switch exhibits a relatively slow, nanosecond response time. The response time then decreases reaching the picosecond time scale in the ENZ regime of the faster material, namely, aluminum-doped zinc oxide. Overall, the response time of the switch is shown to vary by two orders of magnitude in a single device and can be selectively controlled through the interaction of the probe signal with the constituent materials. The ability to adjust the switching speed by controlling the light-matter interaction in a multi-material structure provides an additional degree of freedom in all-optical switch design. Moreover, the proposed approach utilizes slower materials that are very robust and allow to enhance the field intensities while faster materials ensure an ultrafast dynamic response. The proposed control of the switching time could lead to new functionalities within key applications in multiband transmission, optical computing, and nonlinear optics.

Two-dimensional hexagonal boron nitride (hBN) has been known to host a variety of quantum emitters with properties suitable for a broad range of quantum photonic applications. Among them, the negatively charged boron vacancy (VB-) defect with optically addressable spin states has emerged recently due to its potential use in quantum sensing. Compared to spin defects in bulk crystals, VB- preserves its spin coherence properties when placed at nanometer-scale distances from the hBN surface, enabling nanometer-scale quantum sensing. On the other hand, the low quantum efficiency of VB- has hindered its use in practical applications. Several studies have reported improving the overall quantum efficiency of VB- defects using plasmonic effects; however, the overall enhancements of up to 17 times reported to date are relatively modest. In this study, we explore and demonstrate much higher emission enhancements of VB- with ultralow-loss nano-patch antenna (NPA) structures. An overall intensity enhancement of up to 250 times is observed for NPA-coupled VB- defects. Since the laser spot exceeds the area of the NPA, where the enhancement occurs, the actual enhancement provided by the NPA is calculated to be ~1685 times, representing a significant increase over the previously reported results. Importantly, the optically detected magnetic resonance (ODMR) contrast is preserved at such exceptionally strong enhancement. Our results not only establish NPA-coupled VB- defects as high-resolution magnetic field sensors operating at weak laser powers, but also provide a promising approach to obtaining single VB- defects., Comment: 17 pages, 4 figures

The recent discovery of room temperature intrinsic single-photon emitters in silicon nitride (SiN) provides the unique opportunity for seamless monolithic integration of quantum light sources with the well-established SiN photonic platform. In this work, we develop a novel approach to realize planar waveguides made of low-autofluorescing SiN with intrinsic quantum emitters and demonstrate the single-photon emission coupling into the waveguide mode. The observed emission coupling from these emitters is found to be in line with numerical simulations. The coupling of the single-photon emission to a waveguide mode is confirmed by second-order autocorrelation measurements of light outcoupled off the photonic chip by grating couplers. Fitting the second-order autocorrelation histogram yields $g^{(2)}(0)=0.35\pm0.12$ without spectral filtering or background correction with an outcoupled photon rate of $10^4$ counts per second. This demonstrates the first successful coupling of photons from intrinsic single-photon emitters in SiN to monolithically integrated waveguides made of the same material. The results of our work pave the way toward the realization of scalable, technology-ready quantum photonic integrated circuitry efficiently interfaced with solid-state quantum emitters., Comment: 10 pages, 5 figures

The unique properties of the emerging photonic materials - conducting nitrides and oxides - especially their tailorability, large damage thresholds, and the so-called epsilon-near-zero (ENZ) behavior, have enabled novel photonic phenomena spanning optical circuitry, tunable metasurfaces, and nonlinear optical devices. This work explores direct control of the optical properties of polycrystalline titanium nitride (TiN) and aluminum-doped zinc oxide (AZO) by tailoring the film thickness, and their potential for ENZ-enhanced photonic applications. We demonstrate that TiN-AZO bilayers act as Ferrell-Berreman metasurfaces with thickness-tailorable epsilon-near-zero resonances in the AZO films operating in the telecom wavelengths spanning from 1470 to 1750 nm. The bilayer stacks also act as strong light absorbers in the ultraviolet regime employing the radiative ENZ modes and the Fabry-Perot modes in the constituent TiN films. The studied Berreman metasurfaces exhibit optically-induced reflectance modulation of 15% with picosecond response-time. Together with the optical response tailorability of conducting oxides and nitrides, utilizing the field-enhancement near the tunable ENZ regime could enable a wide range of nonlinear optical phenomena, including all-optical switching, time refraction, and high-harmonic generation.

The Starshot lightsail project aims to build an ultralight spacecraft ("nanocraft") that can reach Proxima Centauri b in approximately 20 years, requiring propulsion with a relativistic velocity of ~60 000 km/s. The spacecraft's acceleration approach currently under investigation is based on applying the radiation pressure from a high-power laser array located on Earth to the spacecraft lightsail. However, the practical realization of such a spacecraft imposes extreme requirements to the lightsail's optical, mechanical, thermal properties. Within this work, we apply adjoint topology optimization and variational autoencoder-assisted inverse design algorithm to develop and optimize a silicon-based lightsail design. We demonstrate that the developed framework can provide optimized optical and opto-kinematic properties of the lightsail. Furthermore, the framework opens up the pathways to realizing a multi-objective optimization of the entire lightsail propulsion system, leveraging the previously demonstrated concept of physics-driven compressed space engineering

Room temperature single-photon sources (SPSs) are critical for the emerging practical quantum applications such as on-chip photonic circuity for quantum communications systems and integrated quantum sensors. However, direct integration of an SPS into on-chip photonic systems remains challenging due to low coupling efficiencies between the SPS and the photonic circuitry that often involve size mismatch and dissimilar materials. Here, we develop an adjoint topology optimization scheme to design high-efficiency couplers between a photonic waveguide and SPS in hexagonal boron nitride (hBN). The algorithm accounts for fabrication constraints and the SPS location uncertainty. First, a library of designs for the different positions of the hBN flake containing an SPS with respect to a Si$_{3}$N$_{4}$ waveguide is generated, demonstrating an average coupling efficiency of 78%. Then, the designs are inspected with dimensionality reduction technique to investigate the relationship between the device geometry (topology) and performance. The fundamental, physics-based intuition gained from this approach could enable the design of high-performance quantum devices

One of the main characteristics of optical imaging systems is the spatial resolution, which is restricted by the diffraction limit to approximately half the wavelength of the incident light. Along with the recently developed classical super-resolution techniques, which aim at breaking the diffraction limit in classical systems, there is a class of quantum super-resolution techniques which leverage the non-classical nature of the optical signals radiated by quantum emitters, the so-called antibunching super-resolution microscopy. This approach can ensure a factor of $\sqrt{n}$ improvement in the spatial resolution by measuring the n-th order autocorrelation function. The main bottleneck of the antibunching super-resolution microscopy is the time-consuming acquisition of multi-photon event histograms. We present a machine learning-assisted approach for the realization of rapid antibunching super-resolution imaging and demonstrate 12 times speed-up compared to conventional, fitting-based autocorrelation measurements. The developed framework paves the way to the practical realization of scalable quantum super-resolution imaging devices that can be compatible with various types of quantum emitters.

Two-dimensional hexagonal boron nitride (hBN) that hosts bright room-temperature single-photon emitters (SPEs) is a promising material platform for quantum information applications. An important step towards the practical application of hBN is the on-demand, position-controlled generation of SPEs. Several strategies have been reported to achieve the deterministic creation of hBN SPEs. However, they either rely on a substrate nanopatterning procedure that is not compatible with integrated photonic devices or utilize a radiation source that might cause unpredictable damage to hBN and underlying substrates. Here, we report a radiation- and lithography-free route to deterministically activate hBN SPEs by nanoindentation with an atomic force microscope (AFM) tip. The method is applied to thin hBN flakes (less than 25 nm in thickness) on flat silicon-dioxide-silicon substrates that can be readily integrated into on-chip photonic devices. The achieved SPEs yields are above 30% by utilizing multiple indent sizes, and a maximum yield of 36% is demonstrated for the indent size of around 400 nm. Our results mark an important step towards the deterministic creation and integration of hBN SPEs with photonic and plasmonic on-chip devices., Comment: 31 pages, 14 figures

In recent years, there is a growing interest in using quantum computers for solving combinatorial optimization problems. In this work, we developed a generic, machine learning-based framework for mapping continuous-space inverse design problems into surrogate quadratic unconstrained binary optimization (QUBO) problems by employing a binary variational autoencoder and a factorization machine. The factorization machine is trained as a low-dimensional, binary surrogate model for the continuous design space and sampled using various QUBO samplers. Using the D-Wave Advantage hybrid sampler and simulated annealing, we demonstrate that by repeated resampling and retraining of the factorization machine, our framework finds designs that exhibit figures of merit exceeding those of its training set. We showcase the framework's performance on two inverse design problems by optimizing (i) thermal emitter topologies for thermophotovoltaic applications and (ii) diffractive meta-gratings for highly efficient beam steering. This technique can be further scaled to leverage future developments in quantum optimization to solve advanced inverse design problems for science and engineering applications.

Single-photon emitters are essential for enabling several emerging applications in quantum information technology, quantum sensing and quantum communication. Scalable photonic platforms capable of hosting intrinsic or directly embedded sources of single-photon emission are of particular interest for the realization of integrated quantum photonic circuits. Here, we report on the first-time observation of room-temperature single-photon emitters in silicon nitride (SiN) films grown on silicon dioxide substrates. As SiN has recently emerged as one of the most promising materials for integrated quantum photonics, the proposed platform is suitable for scalable fabrication of quantum on-chip devices. Photophysical analysis reveals bright (>$10^5$ counts/s), stable, linearly polarized, and pure quantum emitters in SiN films with the value of the second-order autocorrelation function at zero time delay $g^{(2)}(0)$ below 0.2 at room temperatures. The emission is suggested to originate from a specific defect center in silicon nitride due to the narrow wavelength distribution of the observed luminescence peak. Single-photon emitters in silicon nitride have the potential to enable direct, scalable and low-loss integration of quantum light sources with the well-established photonic on-chip platform., Comment: 15 pages, 4 figures, and Supplementary Information

Hybrid systems coupling quantum spin defects (QSD) and magnons can enable unique spintronic device functionalities and probes for magnetism. Here, we add electric field control of magnon-QSD coupling to such systems by integrating ferromagnet-ferroelectric multiferroic with nitrogen-vacancy (NV) center spins. Combining quantum relaxometry with ferromagnetic resonance measurements and analytical modeling, we reveal that the observed electric-field tuning results from ferroelectric polarization control of the magnon-generated fields at the NV. Exploiting the demonstrated control, we also propose magnon-enhanced hybrid electric field sensors with improved sensitivity.

High-harmonic generation is the cornerstone of nonlinear optics. It has been demonstrated in a wide range of crystalline systems including dielectrics, semiconductors, and semi-metals, as well as in gases, leaving metals out due to their low damage threshold. Here, we report on the high-harmonic generation in metallic titanium nitride (TiN) films. TiN is a refractory plasmonic metal, known for its high melting temperature and laser damage threshold, with optical properties similar to those of gold. We show that TiN can withstand laser pulses with peak intensities as high as 13 TW/cm$^2$, one order of magnitude higher than gold, enabling the emission of intraband harmonics up to photon energies of 11 eV. These harmonics can pave the way for compact and efficient plasmonic devices producing vacuum ultraviolet (VUV) frequency combs. Through numerical calculations and experimental studies, we show that the intensity scaling and angular anisotropy of the emitted VUV radiation stem from the anisotropic conduction band structure of TiN, thus confirming its intraband origin.

Plasmonic color printing with semicontinuous metal films is a lithography-free, non-fading, and environment-friendly method of generation of bright colors. Such films are comprised of metal nanoparticles, which resonate at different wavelengths upon light illumination depending on the size and shape of the nanoparticles. To achieve an experimentally demonstrated structure that was optimized in terms of broader color range and increased stability, variable Ag semicontinuous metal films were deposited on a metallic mirror with a sub-wavelength-thick dielectric spacer. Femtosecond laser post-processing was then introduced to extend the color gamut through spectrally induced changes from blue to green, red, and yellow. Long-term stability and durability of the structures were addressed to enable non-fading colors with an optimized overcoating dielectric layer. The thickness of the proposed designs is on the order of 100 nanometers, and it can be deposited on any substrate. These structures generate a broad range of long-lasting colors in reflection that can be applied to real-life artistic or technological applications with a spatial resolution on the order of 0.3 mm or less.

Plasmonic color generation utilizing ultra-thin metasurfaces as well as metallic nanoparticles hold a great promise for a wide range of applications, including color displays, data storage, and information encryption due to its high spatial resolution and mechanical/chemical stability. Most of the recently demonstrated systems generate static colors; however, more advanced applications such as data storage require fast and flexible means to tune the plasmonic colors, while keeping them vibrant and stable. Here, a surface-relief aluminum metasurface that reflects polarization-tunable plasmonic colors is designed and experimentally demonstrated. Excitation of localized surface plasmons encodes discrete combinations of the incident and reflected polarized light into diverse colors. A single storage unit - a nanopixel - stores a multiple-bit piece of information in the orientation of its constituent nanoantennae. This information is then reliably retrieved by inspecting the reflected color sequence with two linear polarizers. It is the broad color variability and high spatial resolution of the proposed encoding approach that supports a strong promise for rapid parallel read-out and encryption of high-density optical data. Our method also enables the robust generation of dynamic kaleidoscopic images with no detrimental "cross-talk" effect. The approach opens up a new route for advanced dynamic steganography, high-density parallel-access optical data storage, and optical information encryption.

The dielectric permittivity of a material encapsulates the essential physics of light-matter interaction into the material's local response to optical excitation. Dynamic, photo-induced modulation of the permittivity can enable an unprecedented level of control over the phase, amplitude, and polarization of light. Therefore, the detailed dynamic characterization of technology-relevant materials with substantially tunable optical properties and fast response times is a crucial step in the realization of tunable optical devices. This work reports on the extraordinarily large permittivity changes in zinc oxide thin films (up to -3.6 relative change in the real part of the dielectric permittivity at 1600 nm wavelength) induced by optically generated free carriers. We demonstrate broadband reflectance modulation up to 70 percent in metal-backed oxide mirrors at the telecommunication wavelengths, with picosecond-scale relaxation times. The epsilon near zero points of the films can be dynamically shifted from 8.5 microns to 1.6 microns by controlling the pump fluence. Finally, we show that the modulation can be selectively enhanced at specific wavelengths employing metal-backed ZnO disks while maintaining picosecond-scale switching times. This work provides insights into the free-carrier assisted permittivity modulation in zinc oxide and could enable the realization of novel dynamic devices for beam-steering, polarizers, and spatial light modulators.

Over the past decade, artificially engineered optical materials and nanostructured thin films have revolutionized the area of photonics by employing novel concepts of metamaterials and metasurfaces where spatially varying structures yield tailorable, "by design" effective electromagnetic properties. The current state-of-the-art approach to designing and optimizing such structures relies heavily on simplistic, intuitive shapes for their unit cells or meta-atoms. Such approach can not provide the global solution to a complex optimization problem where both meta-atoms shape, in-plane geometry, out-of-plane architecture, and constituent materials have to be properly chosen to yield the maximum performance. In this work, we present a novel machine-learning-assisted global optimization framework for photonic meta-devices design. We demonstrate that using an adversarial autoencoder coupled with a metaheuristic optimization framework significantly enhances the optimization search efficiency of the meta-devices configurations with complex topologies. We showcase the concept of physics-driven compressed design space engineering that introduces advanced regularization into the compressed space of adversarial autoencoder based on the optical responses of the devices. Beyond the significant advancement of the global optimization schemes, our approach can assist in gaining comprehensive design "intuition" by revealing the underlying physics of the optical performance of meta-devices with complex topologies and material compositions.

The strong electric and magnetic resonances in dielectric subwavelength structures have enabled unique opportunities for efficient manipulation of light-matter interactions. Besides, the dramatic enhancement of nonlinear light-matter interactions near so-called bound states in the continuum (BICs) has recently attracted enormous attention due to potential advancements in all-optical and quantum computing. However, the experimental realizations and the applications of high- Q factor resonances in dielectric resonances in the visible regime have thus far been considerably limited. In this work, we explore the interplay of electric and magnetic dipoles in arrays of dielectric nanoresonators to enhance light-matter interaction. We report on the experimental realization of high-Q factor resonances in the visible through the collective diffractive coupling of electric and magnetic dipoles. Providing direct physical insights, we also show that coupling the Rayleigh anomaly of the array with the electric and magnetic dipoles of the individual nanoresonators can result in the formation of different types of BICs. We utilize the resonances in the visible regime to achieve lasing action at room temperature with high spatial directionality and low threshold. Finally, we experimentally demonstrate multi-mode, directional lasing and study the BIC-assisted lasing mode engineering in arrays of dielectric nanoresonators. We believe that our results enable a new range of applications in flat photonics through realizing on-chip controllable single and multi-wavelength micro-lasers.

We have proposed the use of surface plasmon resonances at the interface of hybrid magneto-photonic heterostructures [Opt. Mat. Exp., 7, 4316 (2017)] for all-optical control of the macroscopic spin orientation in nanostructures in fs time scales. This requires strong spin-photon coupling for the resonant enhancement of opto-magnetic fields, generated through the inverse Faraday effect, in magnetic nanostructures with perpendicular anisotropy. Here we report on the development of nm thick interlayers to control the growth orientation of hcp-Co alloys grown on refractory plasmonic materials to align the magnetic axis out-of-plane, thereby meeting key requirements for the realization of ultrafast magneto-photonic devices., Comment: 14 pages, 7 figures

Transition metal nitrides have recently gained attention in the fields of plasmonics, plasmon-enhanced photocatalysis, photothermal applications, and nonlinear optics because of their suitable optical properties, refractory nature, and large laser damage thresholds. This work reports comparative studies of the transient response of films of titanium nitride, zirconium nitride, and Au under femtosecond excitation. Broadband transient optical characterization helps to adjudicate earlier, somewhat inconsistent reports regarding hot electron lifetimes based upon single wavelength measurements. These pump-probe experiments show sub-picosecond transient dynamics only within the epsilon-near-zero window of the refractory metals. The dynamics are dominated by photoinduced interband transitions resulting from ultrafast electron energy redistribution. The enhanced reflection modulation in the epsilon-near-zero window makes it possible to observe the ultrafast optical response of these films at low pump fluences. These results indicate that electron-phonon coupling in TiN and ZrN is 25-100 times greater than in Au. Strong electron-phonon coupling drives the sub-picosecond optical response and facilitates greater lattice heating compared to Au, making TiN and ZrN promising for photothermal applications. The spectral response and dynamics of TiN and ZrN are only weakly sensitive to pump fluence and pump excitation energy. However, the magnitude of the response is much greater at higher pump photon energies and higher fluences, reaching peak observed values of 15 % in TiN and 50 % in ZrN in the epsilon-near-zero window.

The ultrafast changes of material properties induced by short laser pulses can lead to frequency shift of reflected and transmitted radiation. Recent reports highlight how such a frequency shift is enhanced in the spectral regions where the material features a near-zero real part of the permittivity. Here we investigate the frequency shift for fields generated by four-wave mixing with a nonlinear polarisation oscillating at twice the pump frequency. In our experiment we observe a frequency shift of more than 60 nm (compared to the pulse width of ~40 nm) for the phase conjugated radiation generated by a 500 nm Aluminium-doped Zinc Oxide (AZO) film pumped close to the epsilon-near-zero wavelength. Our results indicate applications of time-varying media for nonlinear optics and frequency conversion.

With the emergence of new photonic and plasmonic materials with optimized properties as well as advanced nanofabrication techniques, nanophotonic devices are now capable of providing solutions to global challenges in energy conversion, information technologies, chemical/biological sensing, space exploration, quantum computing, and secure communication. Addressing grand challenges poses inherently complex, multi-disciplinary problems with a manifold of stringent constraints in conjunction with the required system's performance. Conventional optimization techniques have long been utilized as powerful tools to address multi-constrained design tasks. One example is so-called topology optimization that has emerged as a highly successful architect for the advanced design of non-intuitive photonic structures. Despite many advantages, this technique requires substantial computational resources and thus has very limited applicability to highly constrained optimization problems within high-dimensions parametric space. In our approach, we merge the topology optimization method with machine learning algorithms such as adversarial autoencoders and show substantial improvement of the optimization process by providing unparalleled control of the compact design space representations. By enabling efficient, global optimization searches within complex landscapes, the proposed compact hyperparametric representations could become crucial for multi-constrained problems. The proposed approach could enable a much broader scope of the optimal designs and data-driven materials synthesis that goes beyond photonic and optoelectronic applications.

Integrated on-demand single-photon sources are critical for the implementation of photonic quantum information processing systems. To enable practical quantum photonic devices, the emission rates of solid-state quantum emitters need to be substantially enhanced and the emitted signal must be directly coupled to an on-chip circuitry. The photon emission rate speed-up is best achieved via coupling to plasmonic antennas, while on-chip integration can be easily obtained by directly coupling emitters to photonic waveguides. The realization of practical devices requires that both the emission speed-up and efficient out-couping are achieved in a single architecture. Here, we propose a novel platform that effectively combines on-chip compatibility with high radiative emission rates, a quantum plasmonic launcher. The proposed launchers contain single nitrogen-vacancy (NV) centers in nanodiamonds as quantum emitters that offer record-high average fluorescence lifetime shortening factors of about 7000 times. Nanodiamonds with single NV are sandwiched between two silver films that couple more than half of the emission into in-plane propagating surface plasmon polaritons. This simple, compact, and scalable architecture represents a crucial step towards the practical realization of high-speed on-chip quantum networks.

Deterministic nanoassembly may enable unique integrated on-chip quantum photonic devices. Such integration requires a careful large-scale selection of nanoscale building blocks such as solid-state single-photon emitters by the means of optical characterization. Second-order autocorrelation is a cornerstone measurement that is particularly time-consuming to realize on a large scale. We have implemented supervised machine learning-based classification of quantum emitters as "single" or "not-single" based on their sparse autocorrelation data. Our method yields a classification accuracy of over 90% within an integration time of less than a second, realizing roughly a hundredfold speedup compared to the conventional, Levenberg-Marquardt approach. We anticipate that machine learning-based classification will provide a unique route to enable rapid and scalable assembly of quantum nanophotonic devices and can be directly extended to other quantum optical measurements., Comment: Adv. Quantum Technol. 2020

We use quantum electrodynamics and the confinement-induced nonlocal dielectric response model based on the Keldysh-Rytova electron interaction potential to study the epsilon-near-zero modes of metallic films in the transdimensional regime. New peculiar effects are revealed such as the plasmon mode degeneracy lifting and the dipole emitter coupling to the split epsilon-near-zero modes, leading to thickness-controlled spontaneous decay with up to three-orders-of-magnitude increased rates., Comment: Expanded version: 7 two-column pages, 3 figures, 45 references

We investigate adiabatic frequency conversion using epsilon near zero (ENZ) materials and show that while the maximum frequency conversion for a given change of permittivity does not exhibit increase in the vicinity of {\epsilon}=0 condition. However, that change can be achieved in a shorter length, and if the pump is also in the ENZ vicinity, at a lower pump intensity. This slow propagation effect makes the conversion efficiency in the ENZ material comparable to that in microresonators and other structured slow light schemes, but unlike the latter no nanofabrication is required for ENZ materials which constitutes their major advantage over alternative frequency conversion approaches.

On-chip scalable integration represents a major challenge for practical quantum devices. One particular challenge is to implement on-chip optical readout of spins in diamond. This readout requires simultaneous application of optical and microwave fields along with an efficient collection of fluorescence. The readout is typically accomplished via bulk optics and macroscopic microwave transmission structures. We experimentally demonstrate an on-chip integrated structure for nitrogen vacancy (NV) spin-based applications, implemented in a single material layer with one patterning step. A nanodiamond with multiple NV centres is positioned at the end of the groove waveguide milled in a thick gold film. The gold film carries the microwave control signal while the groove waveguide acts as a fluorescence collector, partially filtering out the pump excitation. As a result, the device dimensions and fabrication complexity are substantially reduced. Our approach will foster further development of ultra-compact nanoscale quantum sensors and quantum information processing devices on a monolithic platform. NV centre-based nanoscale sensors are the most promising application of the developed interface., Comment: 17 pages, 9 figures

On-demand, switchable phase transitions between topologically non-trivial and trivial photonic states are demonstrated. Specifically, it is shown that integration of a 2D array of coupled ring resonators within a thermal heater array enables unparalleled control over topological protection of photonic modes. Importantly, auxiliary control over spatial phase modulation opens up a way to guide topologically protected edge modes along generated virtual boundaries. The proposed approach can lead to practical realizations of topological phase transitions in many photonic applications, including topologically protected photonic memory/logic devices, robust optical modulators, and switches.

Quantum emitters coupled to plasmonic nanoantennas produce single photons at unprecedentedly high rates in ambient conditions. This enhancement of quantum emitters' radiation rate is based on the existence of optical modes with highly sub-diffraction volumes supported by plasmonic gap nanoantennas. Nanoantennas with gap sizes on the order of few nanometers have been typically produced using various self-assembly or random assembly techniques. Yet, the difficulty of controllably fabricate nanoantennas with the smallest mode sizes coupled to pre-characterized single emitters until now has remained a serious issue plaguing the development of quantum plasmonic devices. We demonstrate the transfer of nanodiamonds with single nitrogen-vacancy (NV) centers to an epitaxial silver substrate and their subsequent deterministic coupling to plasmonic gap nanoantennas. Through fine control of the assembled nanoantenna geometry, a dramatic shortening of the NV fluorescence lifetime was achieved. We furthermore show that by preselecting NV centers exhibiting a photostable spin contrast, a coherent spin dynamics can be measured in the coupled configuration. The demonstrated approach opens unique applications of plasmon-enhanced quantum emitters for integrated quantum information and sensing devices., Comment: 12 pages, 4 figures