29 results on '"Shahin, David I."'
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2. Electrical Properties 4
3. Thermal etching of nanocrystalline diamond films
4. Electrical characterization of ALD HfO2 high-k dielectrics on ( 2¯01) β-Ga2O3
5. (Invited) High Power Diamond Devices with 2-D Transport Channels
6. ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
7. (Invited) Achieving Vertical Trench-Gate GaN MOSFETs via Process Optimization
8. Thermionic Emission Analysis of TiN and Pt Schottky Contacts to β-Ga2O3
9. A Tri-Layer PECVD SiN Passivation Process for Improved AlGaN/GaN HEMT Performance
10. Vertical GaN Junction Barrier Schottky Diodes
11. Band Alignments of Atomic Layer Deposited ZrO2and HfO2High-k Dielectrics with (-201) β-Ga2O3
12. Vertical GaN junction barrier schottky diodes by Mg implantation and activation annealing
13. Enhancement mode AlGaN/GaN MOS high-electron-mobility transistors with ZrO2 gate dielectric deposited by atomic layer deposition
14. Impact of Surface Passivation on the Dynamic ON-Resistance of Proton-Irradiated AlGaN/GaN HEMTs
15. Electrical and Thermal Stability of ALD-Deposited TiN Transition Metal Nitride Schottky Gates for AlGaN/GaN HEMTs
16. Electrical characterization of ALD HfO2 high-k dielectrics on (201) β-Ga2O3.
17. Electrical characterization of ALD HfO2 high-k dielectrics on (201) β-Ga2O3.
18. Ultraviolet detector based on graphene/SiC heterojunction
19. Thermionic Emission Analysis of TiN and Pt Schottky Contacts to β-Ga2O3.
20. Band Alignments of Atomic Layer Deposited ZrO2 and HfO2 High-k Dielectrics with (-201) β-Ga2O3.
21. A Tri-Layer PECVD SiN Passivation Process for Improved AlGaN/GaN HEMT Performance.
22. (Invited) High Power Diamond Devices with 2-D Transport Channels
23. ALD TiN Schottky Gates for Improved Electrical and Thermal Stability in III-N Devices
24. Thermionic Emission Analysis of TiN and Pt Schottky Contacts to ?-Ga2O3
25. Band Alignments of Atomic Layer Deposited ZrO2 and HfO2 High-k Dielectrics with (-201) ?-Ga2O3
26. Vertical GaN Junction Barrier Schottky Diodes.
27. (Invited) Radiation-Induced Defect Mechanisms in GaN HEMTs
28. Band Alignments of Atomic Layer Deposited ZrO2and HfO2High-k Dielectrics with (-201) β-Ga2O3
29. Enhancement mode AlGaN/GaN MOS high-electron-mobility transistors with ZrO2gate dielectric deposited by atomic layer deposition
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