1. Characterization of WC–CrAlN heterostructures obtained using a cathodic arc ion plating process
- Author
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Jeon G. Han, Ho Y. Lee, Seung H. Baeg, and Se H. Yang
- Subjects
Materials science ,Ion plating ,Analytical chemistry ,Heterojunction ,Surfaces and Interfaces ,General Chemistry ,Substrate (electronics) ,Condensed Matter Physics ,Indentation hardness ,Surfaces, Coatings and Films ,Electron diffraction ,Transmission electron microscopy ,Residual stress ,Materials Chemistry ,Wafer - Abstract
New WC–CrAlN heterostructure films were deposited on Si wafer and S45C steel substrate by a cathodic arc ion plating (CAIP) process. The Al concentration and bilayer repeat period (λ; 2–10 nm) were controlled to obtain a nano-layered structure. We have characterized our samples using X-ray diffraction (XRD), cross-sectional transmission electron microscopy (TEM) and electron diffraction patterns. Mechanical properties of the WC–CrAlN films were characterized using nano-indentation tests, residual stress evaluation and scratch testing. The microhardness of WC–CrAlN films was in the range of 30–43 GPa. The residual stress was reduced below 2 GPa and the adhesion strength obtained was approximately 50 N by alternative deposition of heterostructure (WC–CrAlN) and buffer (WC–Cr) layers.
- Published
- 2003
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