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Al2O3 grown by Atomic Layer Chemical Vapour Deposition (ALCVD) on n-type 4H-SiC with a nominal thickness of 100nm has been characterized by Grazing Incidence X-Ray Diffraction (GIXD) and Specular X-Ray Reflectivity (SXR) measurements. After post-deposition, the samples were annealed at different temperatures and durations in argon atmosphere. The GIXD results reveal crystallization at temperatures above 900°C, most likely in the form of θ-Al2O3 or γ-Al2O3. However, the formation of a new, non-stoichiometric Al2O3 phase cannot be excluded. The crystalline domain size, evaluated from the peak FWHMs after subtraction of the instrumental broadening, is found to be almost equal (18±1nm), independent of T in the range 900°C≤T≤1100°C and time in the range 1h≤t≤3h. From SXR, mass density profiles are derived. Whereas the as grown film exhibits the lowest mass density, at 800°C a low-density interface layer forms. At the same time, it appears that the initial crystallization starts at the surface. At 900°C, the density increases sharply (this process involves film crystallization) and the film thickness correspondingly reduces. Whereas the density increase and thickness reduction still continue for T>900°C (tendency to the density α-Al2O3), the density of the interfacial layer has a minimum at 900°C and gradually increases for higher temperatures. From Atomic Force Microscopy (AFM) investigations it could be revealed that the starting of the crystallization at 900°C is accompanied with a substantial surface roughening. For annealing at higher temperatures, the surface roughness is in the range of the one of the as-grown sample (about 6Å).

The physical properties of graphene nano-structures are highly anisotropic and generally correlated to the graphene sheet orientation. We investigated the capability to grow nano-graphene structured carbon films and to control their texturing by pulsed laser ablation of a pyrolytic graphite target (Nd:YAG laser, 2nd harmonic: λ=532 nm, hν=2.33 eV, τ=7 ns, ν=10 Hz, φ=7 J/cm2), operating at different temperature conditions. Carbon films were deposited on Si <100> substrates. Detailed characterisation by synchrotron X-ray measurements were performed on samples deposited in vacuum (~10-3 Pa) at high substrate temperatures (>800°C) and at room temperature followed by post-annealing at high temperature (>800°C). The X-ray measurements established the formation of nano-sized graphene structures for both sample sets. In the first set, the nano-particles are correlated among them, their size increases with substrate temperature and a longitudinal growth of parallel graphene layers occurs, with the ˆc axis parallel to the substrate. In post annealed sample set, on the contrary, the nano-particles size is smaller and depends weakly on annealing temperature. The graphene ˆc axis results to be randomly oriented up to ~850°C. Above this temperature it seems that a transition phase occurs and the c axis results to lie parallel to substrate plane.

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Buried layers of perfect dislocation loops were generated in silicon by 6×1015Si+/cm2, 100 keV ion implantation and furnace annealing at 950°C for 30, 60 and 120 min. The samples were analyzed by Rutherford backscattering (RBS) channeling technique, planar and cross-section transmission electron microscopy (TEM) observation and computer simulation of double crystal X-ray diffraction (DCD) rocking curves.