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127 results on '"Serruys, Yves"'

1. The TRAMOS pixel as a photo-detection device: design, architecture and building blocks

Author

Fourches, Nicolas T., Kumar, Vishant, Serruys, Yves, Gutierrez, G., Leprêtre, F., and Jomard, F.

Subjects
Physics - Instrumentation and Detectors
Abstract

The deep trapping gate device concept for charged particle detection was recently introduced in Saclay/IRFU. It is based on an n-MOS structure in which a buried gate, located below the n-channel, collects carriers which are generated by ionizing particles. They deposit their energy in a volume which extends in the bulk, below the buried gate. The n-channel device is based on holes in-buried gate localization. Source-drain current modulation occurs, measurable during readout. The buried gate (Deep Trapping Gate or DTG) contains deep level centers which can be introduced during process or may be made with a Quantum Well. The device can be scaled down providing a micron range resolution. The proof of principle for such a device was verified using 2D device and process simulations. Work under way focusses on the study of building blocks. In this contribution, the pixel proof of design, using existing fabrication techniques will be discussed first. The use of this pixel for photon imaging will be discussed

Published
2017
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2. Limits in point to point resolution of MOS (Metal-Oxide-Semiconductor) based pixels detector arrays

Author

Fourches, Nicolas, Coppolani, Xavier, Desforge, Daniel, Kebbiri, Mariam, Kumar, Vishant, Serruys, Yves, Gutierrez, Gaêlle, Leprêtre, Frederic, and Jomard, François

Subjects
Physics - Instrumentation and Detectors
Abstract

In high energy physics point to point resolution is a key prerequisite for particle detector pixel arrays. Current and future experiments require the development of inner-detectors able to resolve the tracks of particles down to the micron range. Present-day technologies, although not fully implemented in actual detectors can reach a 5 micometer limit, based on statistical measurements, with a pixel-pitch in the 10 micrometer range. Attempts to design small pixels based on SOI (Silicon On Insulator) technology will be briefly recalled here. This paper is devoted to the evaluation of the building blocks with regard to their use in pixel arrays for the accurate tracking of the charged particles. We will make here a simulations based quantitative evaluation of the physical limits in the pixel size. A design based on CMOS (Complementary Metal-Oxide-Semiconductor) compatible technologies that allows a reduction of the pixel size down to the sub-micronmeter range is introduced. Its physical principle relies on a buried carrier-localizing collecting gate. The fabrication process needed by this pixel design can be based on existing process steps used in silicon microelectronics. The pixel characteristics will be discussed as well as the design of pixel arrays. The existing bottlenecks and how to overcome them will be discussed in the light of recent ion implantation and material characterization., Comment: PSD11 conference,2017

Published
2017
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3. Effect of He-ion irradiation on short-range ordering in model (EFDA) Fe-Cr alloys

Author

Dubiel, Stanislaw M., Żukrowski, Jan, and Serruys, Yves

Subjects
Condensed Matter - Materials Science
Abstract

The effect of He-ion irradiation on a short-range ordering in model Fe100-xCrx (x=5.8, 10.75, 15.15) was studied by means of conversion electrons Mossbauer spectroscopy. The alloys were irradiated to the dose of 7.5 dpa with ions of 0.25 and 2.0 MeV. The short-range order was expressed in terms of the Warren-Cowley parameters: alpha1 (for the first nearest-neighbor shell), alpha2 (for the second nearest-neighbor shell) and alpha12 (for both shells). For all alloys and both energies a clustering of Cr atoms was revealed, as far as alpha1 and alpha2 are considered, yet its degree was found to be both concentration and energy dependent. The average short-range order parameter, alpha12, exhibits, however, a cross-over transition at x=10 from ordering into clustering. The strongest effect of energy occurs at x=5.8 and the weakest one at x=10.75., Comment: The paper has been upgraded and substituted by a new version

Published
2014

10. General Conclusion

Author

Tirira, Jorge, Serruys, Yves, Trocellier, Patrick, Tirira, Jorge, Serruys, Yves, and Trocellier, Patrick

Published
1996
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14. Introduction

Author

Tirira, Jorge, Serruys, Yves, Trocellier, Patrick, Tirira, Jorge, Serruys, Yves, and Trocellier, Patrick

Published
1996
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24. Reactive sputtering deposition of SiO2 thin films

Author

Radović Ivan, Serruys Yves, Limoge Yves, and Bibić Nataša

Subjects
sio2, thin films, reactive sputtering, rbs analysis, Chemistry, QD1-999
Abstract

SiO2 layers were deposited in a UHV chamber by 1 keV Ar+ ion sputtering from a high purity silicon target, using different values of the oxygen partial pressure (5×10-6-2×10-4 mbar) and of the ion beam current on the target (1.67-6.85 mA). The argon partial pressure during operation of the ion gun was 1×10-3 mbar. The substrate temperature was held at 550°C and the films were deposited to a thickness of 12.5-150 nm, at a rate from 0.0018-0.035 nm s-1. Structural characterization of the deposited thin films was performed by Rutherford backscattering spectrometry (RBS analysis). Reactive sputtering was proved to be efficient for the deposition of silica at 550°C, an oxygen partial pressure of 2×10-4 mbar (ion beam current on the target of 5 mA) or, at a lower deposition rate, ion beam current of 1.67 mA and an oxygen partial pressure of 6×10-5 mbar. One aspect of these investigations was to study the consumption of oxygen from the gas cylinder, which was found to be lower for higher deposition rates.

Published
2008
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26. Characterization of the ion-amorphization process and thermal annealing effects on third generation SiC fibers and 6H-SiC

Author

Huguet-Garcia Juan, Jankowiak Aurélien, Miro Sandrine, Podor Renaud, Meslin Estelle, Thomé Lionel, Serruys Yves, and Costantini Jean-Marc

Subjects
Nuclear engineering. Atomic power, TK9001-9401
Abstract

The objective of the present work is to study the irradiation effects on third generation SiC fibers which fulfill the minimum requisites for nuclear applications, i.e. Hi-Nicalon type S, hereafter HNS, and Tyranno SA3, hereafter TSA3. With this purpose, these fibers have been ion-irradiated with 4 MeV Au ions at room temperature and increasing fluences. Irradiation effects have been characterized in terms of micro-Raman Spectroscopy and Transmission Electron Microscopy and compared to the response of the as-irradiated model material, i.e. 6H-SiC single crystals. It is reported that ion-irradiation induces amorphization in SiC fibers. Ion-amorphization kinetics between these fibers and 6H-SiC single crystals are similar despite their different microstructures and polytypes with a critical amorphization dose of ∼3 × 1014 cm−2 (∼0.6 dpa) at room temperature. Also, thermally annealing-induced cracking is studied via in situ Environmental Scanning Electron Microscopy. The temperatures at which the first cracks appear as well as the crack density growth rate increase with increasing heating rates. The activation energy of the cracking process yields 1.05 eV in agreement with recrystallization activation energies of ion-amorphized samples.

Published
2015
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30. Recovery effects due to the interaction between nuclear and electronic energy losses in SiC irradiated with a dual-ion beam.

Author

Thomé, Lionel, Velisa, Gihan, Miro, Sandrine, Debelle, Aurélien, Garrido, Frédérico, Sattonnay, Gaël, Mylonas, Stamatis, Trocellier, Patrick, and Serruys, Yves

Subjects
ENERGY dissipation, SILICON carbide, IRRADIATION, ION beams, RUTHERFORD backscattering spectrometry, RAMAN spectroscopy, TRANSMISSION electron microscopy, MICROSTRUCTURE
Abstract

Single and dual-beam ion irradiations of silicon carbide (SiC) were performed to study possible Synergetic effects between Nuclear (Sn) and Electronic (Se) Energy Losses. Results obtained combining Rutherford backscattering in channeling conditions, Raman spectroscopy, and transmission electron microscopy techniques show that dual-beam irradiation of SiC induces a dramatic change in the final sample microstructure with a substantial decrease of radiation damage as compared to single-beam irradiation. Actually, a defective layer containing dislocations is formed upon dual-beam irradiation (Sn&Se), whereas single low-energy irradiation (Sn alone) or even sequential (Sn+Se) irradiations lead tofull amorphization. The healing process is ascribed to the electronic excitation arising from the electronic energy loss of swift ions. These results shed new light on the long-standing puzzling problem of the existence of a possible synergy between Sn and Se in ion-irradiation experiments. This work is interesting for both fundamental understanding of the ion-solid interactions and technological applications in the nuclear industry where recovery Sn/Se effects may preserve the integrity of nuclear devices. [ABSTRACT FROM AUTHOR]

Published
2015
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36. Scintillating Screens Investigations with Proton Beams at 30 keV and 3 MeV

Author

Simon, Claire, Ausset, Patrick, Bordas, Eric, Fils, JéRôMe, Harrault, Francis, Leprêtre, FréDéRic, Senée, Franck, Serruys, Yves, Tuske, Olivier, Institut de Recherches sur les lois Fondamentales de l'Univers (IRFU), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, Institut de Physique Nucléaire d'Orsay (IPNO), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), and Centre National de la Recherche Scientifique (CNRS)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Université Paris-Sud - Paris 11 (UP11)

Subjects
electron, Transverse Profile Monitors, [PHYS.PHYS.PHYS-ACC-PH]Physics [physics]/Physics [physics]/Accelerator Physics [physics.acc-ph], diagnostics, Physics::Accelerator Physics, ion-source, ion, Accelerator Physics, proton
Abstract

Luminescent screens hit by accelerated charged particle beams are commonly used as beam diagnostics to produce a visible emitted light, which can be sensed by a camera. In order to investigate the characteristics of the luminescence response of several scintillators, the beam shape and the observation of the transverse position, experiments were done with different low intensity proton beams produced by two different test benches. This study is motivated by the need to identify scintilla-tor materials for the development of a 4-dimensional emittancemeter which will allow the characterization of the beams, in particular the emittance measurement (size, angular divergence). This paper describes the experimental setups and our investigations of the optical properties of various scintillating materials at two different proton beam energies respectively about 30 keV and 3 MeV. The light produced by these screens is characterized by yield, flux of the emitted light versus the beam intensity, time response, and long life-time and they are compared., Proceedings of the 5th Int. Beam Instrumentation Conf., IBIC2016, Barcelona, Spain

Published
2016
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37. In situ E-SEM and TEM observations of the thermal annealing effects on ion-amorphized 6H-SiC single crystals and nanophased SiC fibers

Author

Huguet-Garcia, Juan, Jankowiak, Aurélien, Miro, Sandrine, Podor, Renaud, Meslin, Estelle, Serruys, Yves, Costantini, Jean-Marc, Service des Recherches Métallurgiques Appliquées (SRMA), Département des Matériaux pour le Nucléaire (DMN), CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, Service de recherches de métallurgie physique (SRMP), Etude de la Matière en Mode Environnemental (L2ME), Institut de Chimie Séparative de Marcoule (ICSM - UMR 5257), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Ecole Nationale Supérieure de Chimie de Montpellier (ENSCM)-Institut de Chimie du CNRS (INC)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Ecole Nationale Supérieure de Chimie de Montpellier (ENSCM)-Institut de Chimie du CNRS (INC)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Montpellier (UM)-Ecole Nationale Supérieure de Chimie de Montpellier (ENSCM)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Montpellier (UM)-Ecole Nationale Supérieure de Chimie de Montpellier (ENSCM)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
[CHIM.MATE]Chemical Sciences/Material chemistry, ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2015
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39. Monitoring by Raman spectroscopy of the damage induced in the wake of energetic ions

Author

Miro, Sandrine, Velisa, Gihan, Thomé, Lionel, Trocellier, Patrick, Serruys, Yves, Debelle, Aurelien, Garrido, Frédérico, Lab JANNUS, Service de recherches de métallurgie physique (SRMP), Département des Matériaux pour le Nucléaire (DMN), CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Département des Matériaux pour le Nucléaire (DMN), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, Horia Hulubei National Institute for Physics and Nuclear Engineering, Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM), and Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI.ACOU]Engineering Sciences [physics]/Acoustics [physics.class-ph], [CHIM.ANAL]Chemical Sciences/Analytical chemistry, [SHS.GESTION]Humanities and Social Sciences/Business administration, [CHIM.MATE]Chemical Sciences/Material chemistry, [PHYS.NEXP]Physics [physics]/Nuclear Experiment [nucl-ex], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2014
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43. Nanostructuration of Cr/Si Layers Induced by Ion Beam Mixing

Author

Lunéville, Laurence, Largeau, Ludovic, Deranlot, Cyrile, Moncoffre, Nathalie, Serruys, Yves, Baldinozzi, Gianguido, Simeone, David, Laboratoire Structures, Propriétés et Modélisation des solides (SPMS), Institut de Chimie du CNRS (INC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Unité mixte de physique CNRS/Thales (UMPhy CNRS/THALES), Centre National de la Recherche Scientifique (CNRS)-THALES, Institut de Physique Nucléaire de Lyon (IPNL), Centre National de la Recherche Scientifique (CNRS)-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3), Service de recherches de métallurgie physique (SRMP), Département des Matériaux pour le Nucléaire (DMN), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, THALES [France]-Centre National de la Recherche Scientifique (CNRS), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), and Baldinozzi, Gianguido

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Abstract

Atomic collisions in solids induced by ion beam are often associated with the concept of disorder. In fact, the mobility induced in solids by ion irradiation at appropriate temperatures leads to the production of a wealth of phases which may (or not) be related to the equilibrium phase diagram. Despite, many attempts are made to understand the phase stability and the enhanced mobility of defect under irradiation even at the atomic scale, no clear picture of ion beam mixing exists. The major problem associated with ion beam mixing comes from the fact that it remains quite difficult to accurately measure a concentration over few nanometers. The X Ray Reflectometry (XRR), extensively used in micro electronics, appears to be a useful technique to overcome this difficulty. In this work, we apply the XRR technique to study the nanostructuration of Cr/Si layers induced by 80 keV Kr ion beam at room temperature, a textbook example of ion beam mixing. The analysis of XRR profiles allows computing accurate profiles of Si and Cr concentrations with a resolution equals to 1 nanometer. From these experimental profiles, we point out that the ion beam mixing appears to be a complex process which can not be only described as a diffusion controlled process.

Published
2012

46. Reactive sputtering deposition of SiO2 thin films

Author

Radović, Ivan, Serruys, Yves, Limoge, Yves, Bibić, Nataša M., Radović, Ivan, Serruys, Yves, Limoge, Yves, and Bibić, Nataša M.

Abstract

SiO2 layers were deposited in a UHV chamber by 1 keV Ar+ ion sputtering from a high purity silicon target, using different values of the oxygen partial pressure (5 x 10(-6)-2 x 10(-4) mbar) and of the ion beam Current on the target (1.67-6.85 mA). The argon partial pressure during operation of the ion gun was 1x10(-3) mbar. The Substrate temperature was held at 550 degrees C and the films were deposited to a thickness of 12.5-150 nm, at a rate from 0.0018-0.035 nm s(-1). Structural characterization of the deposited thin films was performed by Rutherford backscattering spectrometry (RBS analysis). Reactive sputtering was proved to be efficient for the deposition of silica at 550 degrees C, an oxygen partial pressure of 2 x 10(-4) mbar (ion beam Current on the target of 5 mA) or, at a lower deposition rate, ion beam current of 1.67 mA and an oxygen partial pressure of 6 x 10(-5) mbar. One aspect of these investigations was to Study the consumption of oxygen from the gas cylinder, which was found to be lower for higher deposition rates.

Published
2008

48. Radiation-induced cavities in aluminium alloy imaged by in line electron holography.

Author

Ribis, Joel, Donnadieu, Patricia, Flament, Camille, Garnier, Jérôme, Lepretre, Frédéric, Serruys, Yves, and Deschamps, Alexis

Subjects
ALUMINUM alloys, IMAGE analysis, ELECTRON holography, CONDENSATION, VACANCIES in crystals, TRANSMISSION electron microscopy, RADIATION
Abstract

In irradiated material, cavities result from the condensation of vacancies induced by collision cascades. The study of their formation is a relevant topic since a high density of cavities may alter significantly the material performance. In this work, a simplified version ofin lineholography was successfully applied for imaging cavities in ion-irradiated 6061 aluminium alloy. In transmission electron microscopy, the incoming electrons experience a phase shift owing to the potential variation induced by the cavities. The retrieval of this phase shift provides a convenient map to observe and highlight the cavities. Information on density of cavities can be easily obtained. In addition, interstitial clusters may also be detected. [ABSTRACT FROM AUTHOR]

Published
2016
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