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A detailed experimental analysis of the impact of device topology on the performance of 1550 nm VCSELs with an active region based on thin InGaAs/InAlGaAs quantum wells and a composite InAlGaAs buried tunnel junction is presented. The high-speed performance of the lasers with L-type device topology (with the largest double-mesa sizes) is mainly limited by electrical parasitics showing noticeable damping of the relaxation oscillations. For the S-type device topology (with the smallest double-mesa sizes), the decrease in the parasitic capacitance of the reverse-biased p+n-junction region outside the buried tunnel junction region allowed to raise the parasitic cutoff frequency up to 13–14 GHz. The key mechanism limiting the high-speed performance of such devices is thus the damping of the relaxation oscillations. VCSELs with S-type device topology demonstrate more than 13 GHz modulation bandwidth and up to 37 Gbps nonreturn-to-zero data transmission under back-to-back conditions at 20 °C.

Single-mode long-wavelength (LW) vertical-cavity surface-emitting lasers (VCSELs) present an inexpensive alternative to DFB-lasers for data communication in next-generation giga data centers, where optical links with large transmission distances are required. Narrow wavelength-division multiplexing systems demand large bit rates and single longitudinal and transverse modes. Spatial division multiplexing transmission through multicore fibers using LW VCSELs is enabling still larger-scale data center networks. This review discusses the requirements for achieving high-speed modulation, as well as the state-of-the-art. The hybrid short-cavity concept allows for the realization of f3dB frequencies of 17 GHz and 22 GHz for 1300 nm and 1550 nm range VCSELs, respectively. Wafer-fusion (WF) concepts allow the realization of long-time reliable LW VCSELs with a record single-mode output power of more than 6 mW, 13 GHz 3 dB cut-off frequency, and data rates of 37 Gbit/s for non-return-to-zero (NRZ) modulation at 1550 nm.

Abstract The 1300 nm range vertical‐cavity surface‐emitting lasers with the active region based on InGaAs/InGaAlAs superlattice are fabricated using molecular‐beam epitaxy and the double wafer‐fusion technique. Lasers with the buried tunnel junction diameter of 5 μm have shown single‐mode CW operation with the output optical power of ∼6 mW at 20°C. Opened eye diagrams are observed up to 10 Gbps.