209 results on '"Serenkov I"'
Search Results
2. The Excitation Efficiency for Dislocation-Related Luminescence Centers in Silicon with Oxygen Precipitates
3. The Use of Medium-Energy Atom Beams for Solid-State PIXE Diagnostics
4. Quantum Yield of a Silicon Avalanche Photodiode in the Wavelength Range of 120–170 nm
5. Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film
6. Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions
7. Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions
8. Electro- and Magnetotransport near a LaAlO3/SrTiO3 Interphase Boundary
9. The Effect of Dose of Nitrogen-Ion Implantation on the Concentration of Point Defects Introduced into GaAs Layers
10. Elastically strained and relaxed La0.67Ca0.33MnO3 films grown on lanthanum aluminate substrates with different orientations
11. Dislocation-related photoluminescence in silicon implanted with fluorine ions
12. Influence of the substrate temperature on the initial stages of growth of barium strontium titanate films on sapphire
13. Reversible metal-insulator transition of Ar-irradiated LaAlO₃/SrTiO₃ interfaces
14. Formation of donor centers upon the annealing of silicon light-emitting structures implanted with oxygen ions
15. Structure and magneto-transport parameters of partially relaxed and coherently grown La0.67Ba0.33MnO3 films
16. Electro- and magnetotransport in La0.67Ba0.33MnO3 nanosized films coherently grown on a vicinally polished (LaAlO3)0.29 + (SrAl0.5Ta0.5O3)0.71 substrate
17. Photoluminescence in silicon implanted with silicon ions at amorphizing doses
18. Aerosol deposition of detonation nanodiamonds used as nucleation centers for the growth of nanocrystalline diamond films and isolated particles
19. Investigation of the initial stages of the growth of barium strontium titanate ferroelectric films by medium-energy ion scattering
20. A study of raman and rutherford backscattering spectra of amorphous carbon films modified with platinum
21. Stopping cross sections of 50- to 230-keV nitrogen ions in silicon measured by ion backscattering spectroscopy
22. Diagnostics of films and layers of nanometer thickness using middle energy ion scattering technique
23. The Excitation Efficiency for Dislocation-Related Luminescence Centers in Silicon with Oxygen Precipitates
24. In memoriam of E.M. Kruglov and V.V. Filimonov Quantum yield of an avalanche silicon photodiode in the 114-170 and 210-1100 nm wavelength ranges
25. Correlation between luminescent properties and structure organization in AlGaN/GaN superlattices annealed after erbium ion implantation
26. MBE-grown Si: Er light-emitting structures: Effect of epitaxial growth conditions on impurity concentration and photoluminescence
27. Three-dimensional simulation of neutral transport in gases and weakly ionized plasmas
28. Molecular-beam epitaxy and properties of heterostructures with InAs nanoclusters in an Si matrix
29. Effect of substrates on the morphology of BaxSr1−x TiO3 nanometer-scale films
30. Preparation and study of carbidized porous silicon
31. Fast-ion channeling in fullerene crystals
32. Optical and electrical properties of C60Tex films
33. Photoluminescence in silicon implanted with erbium ions at an elevated temperature
34. Component composition and strain of barium-strontium titanate ferroelectric films
35. Dependence of the microwave surface resistance on the structure and thickness of superconducting cuprate films
36. Redistribution of erbium during the crystallization of buried amorphous silicon layers
37. Study of YBa2Cu3O7−x films at various stages of their growth by medium-energy ion scattering
38. Light-induced transformation of C60 films in the presence and absence of oxygen
39. Ba0.7Sr0.3TiO3 ferroelectric film prepared with the sol-gel process and its dielectric performance in planar capacitor structure
40. Dislocation-related luminescence in single-crystal silicon subjected to silicon ion implantation and subsequent annealing
41. Study of intercalated fullerene films by medium-energy ion scattering
42. Growth of ultrathin YBa2Cu3O7−x films on the SrTiO3 substrate
43. Effect of annealing on the optical and structural properties of GaN:Er
44. Composition and porosity of multicomponent structures: porous silicon as a three-component system
45. Three-dimensional simulation of neutral transport in gases and weakly ionized plasmas.
46. Initial Stages of Growth of Barium Zirconate Titanate and Barium Stannate Titanate Films on Single-Crystal Sapphire and Silicon Carbide
47. Influence of mechanical stresses on the charge state of the interface in the LaAlO3/(001)SrTiO3 heterostructures with a distorted stoichiometry
48. Initial stages of the growth of barium strontium titanate films on a semi-isolating silicon carbide substrate
49. Layered planar capacitor based on Ba[sub x]Sr[sub 1-x]TiO[sub 3] with variable parameter x.
50. Study of the growth of YBa2Cu3O7−x films on a Al2O3 single crystal with a CeO2 buffer sublayer
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.