1. Self-selective ferroelectric memory realized with semimetalic graphene channel
- Author
-
Sungchul Jung, Jinyoung Park, Junhyung Kim, Wonho Song, Jaehyeong Jo, Hyunjae Park, Myong Kong, Seokhyeong Kang, Muhammad Sheeraz, Ill Won Kim, Tae Heon Kim, and Kibog Park
- Subjects
Materials of engineering and construction. Mechanics of materials ,TA401-492 ,Chemistry ,QD1-999 - Abstract
Abstract A new concept of read-out method for ferroelectric random-access memory (FeRAM) using a graphene layer as the channel material of bottom-gated field effect transistor structure is demonstrated experimentally. The transconductance of the graphene channel is found to change its sign depending on the direction of spontaneous polarization (SP) in the underlying ferroelectric layer. This indicates that the memory state of FeRAM, specified by the SP direction of the ferroelectric layer, can be sensed unambiguously with transconductance measurements. With the proposed read-out method, it is possible to construct an array of ferroelectric memory cells in the form of a cross-point structure where the transconductance of a crossing cell can be measured selectively without any additional selector. This type of FeRAM can be a plausible solution for fabricating high speed, ultra-low power, long lifetime, and high density 3D stackable non-volatile memory.
- Published
- 2021
- Full Text
- View/download PDF