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The exploration of heterostructures composed of two‐dimensional (2D) transition metal dichalcogenide (TMDc) materials has garnered significant research attention due to the distinctive properties of each individual component and their phase‐dependent unique properties. Using the plasma‐enhanced chemical vapor deposition (PECVD) method, we analyze the fabrication of heterostructures consisting of two phases of molybdenum disulfide (MoS2) in four different cases. The initial hydrogen evolution reaction (HER) polarization curve indicates that the activity of the heterostructure MoS2 is consistent with that of the underlying MoS2, rather than the surface activity of the upper MoS2. This behavior can be attributed to the presence of Schottky barriers, which include contact resistance, which significantly hampers the efficient charge transfer at junctions between the two different phases of MoS2 layers and is mediated by van der Waals bonds. Remarkably, the energy barrier at the junction dissipates upon reaching a certain electrochemical potential, indicating surface activation from the top phase of MoS2 in the heterostructure. Notably, the 1T/2H MoS2 heterostructure demonstrates enhanced electrochemical stability compared to its metastable 1T‐MoS2. This fundamental understanding paves the way for the creation of phase‐controllable heterostructures through an experimentally viable PECVD, offering significant promise for a wide range of applications. [ABSTRACT FROM AUTHOR]

The unique characteristic of 2D transition‐metal dichalcogenide (TMD) semiconductor materials such as PdSe2 is the ability of the bandgap to vary on the basis of the number of layers present. This variation results in a broad bandgap range spanning from semi‐metallic to semiconducting materials, underscoring the significance of precisely controlling the material thickness. In this study, the thicknesses of chemical vapor deposited PdSe2 films are precisely controlled layer‐by‐layer via cyclic atomic layer etching (ALE), which comprised a radical adsorption step generated by oxygen and chlorine plasmas, followed by a desorption step with an organic solvent vapor such as formic acid. Cyclic etching with one monolayer of PdSe2/cycle is achieved using both types of adsorption gases while maintaining the ratio of Se/Pd underlying PdSe2 at ≈2. This cyclic ALE method is also applicable for smoothing TMD material surfaces by isotropically removing individual rough surface layers. Because this etching method only utilizes chemical reactions with radicals generated by plasmas and organic vapors, it is not only unaffected by the physical damage caused by the irradiation of energetic particles such as ions in plasmas, but also is applicable to 3D structure processing. [ABSTRACT FROM AUTHOR]

Brain‐inspired parallel computing is increasingly considered a solution to overcome memory bottlenecks, driven by the surge in data volume. Extensive research has focused on developing memristor arrays, energy‐efficient computing strategies, and varied operational mechanisms for synaptic devices to enable this. However, to realize truly biologically plausible neuromorphic computing, it is essential to consider temporal and spatial aspects of input signals, particularly for systems based on the leaky integrate‐and‐fire model. This review highlights the significance of neuromorphic computing and outlines the fundamental components of hardware‐based neural networks. Traditionally, neuromorphic computing has relied on two‐terminal devices such as artificial synapses. However, these suffer from significant drawbacks, such as current leakage and the lack of a third terminal for precise synaptic weight adjustment. As alternatives, three‐terminal synaptic devices, including memtransistors, ferroelectric, floating‐gate, and charge‐trapped synaptic devices, as well as optoelectronic options, are explored. For an accurate replication of biological neural networks, it is vital to integrate artificial neurons and synapses, implement neurobiological functions in hardware, and develop sensory neuromorphic computing systems. This study delves into the operational mechanisms of these artificial components and discusses the integration process necessary for realizing biologically plausible neuromorphic computing, paving the way for future brain‐inspired electronic systems. [ABSTRACT FROM AUTHOR]

Among the transition metal dichalcogenides (TMD), tungsten disulfide (WS2) and molybdenum disulfide (MoS2) are promising sulfides for replacing noble metals in the hydrogen evolution reaction (HER) owing to their abundance and good catalytic activity. However, the catalytic activity is derived from the edge sites of WS2 and MoS2, while their basal planes are inert. We propose a novel process for N-doped TMD synthesis for advanced HER using N2 + Ar + H2S plasma. The high ionization energy of Ar gas enabled nitrogen species activation results in efficient N-doping of TMD (named In situ-MoS2 and In situ-WS2). In situ-MoS2 and WS2 were characterized by various techniques (Raman spectroscopy, XPS, HR-TEM, TOF–SIMS, and OES), confirming nanocrystalline and N-doping. The N-doped TMD were used as electrocatalysts for the HER, with overpotentials of 294 mV (In situ-MoS2) and 298 mV (In situ-WS2) at a current density of 10 mA cm−2, which are lower than those of pristine MoS2 and WS2, respectively. Density functional theory (DFT) calculations were conducted for the hydrogen Gibbs energy (∆GH) to investigate the effect of N doping on the HER activity. Mixed gas plasma proposes a facile and novel fabrication process for direct N doping on TMD as a suitable HER electrocatalyst. [ABSTRACT FROM AUTHOR]