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98 results on '"Seo, Dongwook"'

4. Study of GANs Using a Few Images for Sealer Inspection Systems

Author

Seo, Dongwook, Ha, Yejin, Ha, Seungbo, Jo, Kang-Hyun, Kang, Hyun-Deok, Filipe, Joaquim, Editorial Board Member, Ghosh, Ashish, Editorial Board Member, Kotenko, Igor, Editorial Board Member, Prates, Raquel Oliveira, Editorial Board Member, Zhou, Lizhu, Editorial Board Member, Ohyama, Wataru, editor, and Jung, Soon Ki, editor

Published
2020
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6. A 4.13-GHz UHS Pseudo Two-Port SRAM With BL Charge Time Reduction and Flying Word-Line for HPC Applications in 4-nm FinFET Technology

Author

Kim, Jeongkyun, primary, Yook, Byungho, additional, Lee, Youngo, additional, Choi, Taemin, additional, Choi, Kyuwon, additional, Lee, Chanho, additional, Lee, Juchang, additional, Kim, Hyeongcheol, additional, Yun, Seok, additional, Do, Changhoon, additional, Kwak, Minwoo, additional, Kim, Mijoung, additional, Li, Yunrong, additional, Tang, Hoyoung, additional, Kim, Jaeyoung, additional, Lee, Inhak, additional, Seo, Dongwook, additional, and Baeck, Sangyeop, additional

Published
2024
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8. Comparison of Edge Operators for Detection of Vanishing Points

Author

Seo, Dongwook, Hernández, Danilo Cáceres, Jo, Kang-Hyun, Hutchison, David, Series editor, Kanade, Takeo, Series editor, Kittler, Josef, Series editor, Kleinberg, Jon M., Series editor, Mattern, Friedemann, Series editor, Mitchell, John C., Series editor, Naor, Moni, Series editor, Pandu Rangan, C., Series editor, Steffen, Bernhard, Series editor, Terzopoulos, Demetri, Series editor, Tygar, Doug, Series editor, Weikum, Gerhard, Series editor, Núñez, Manuel, editor, Nguyen, Ngoc Thanh, editor, Camacho, David, editor, and Trawiński, Bogdan, editor

Published
2015
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15. Quantitative Radiologic analysis and Clinical Outcomes of Urgent EC-IC Bypass for Hemodynamic Compromised Patients with Acute Ischemic Stroke

Author

Jo, Hyunjun, primary, Seo, Dongwook, additional, Kim, Young-Deok, additional, Ban, Seung Pil, additional, Kim, Tackeun, additional, Kwon, Oki, additional, Oh, Chang Wan, additional, Sunwoo, Leonard, additional, Kim, Beom Joon, additional, Han, Moon-Ku, additional, Bae, Hee-Joon, additional, Lee, Si Un, additional, and Bang, Jae Seung, additional

Published
2021
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19. Economic policy uncertainty, social capital, and corporate cash holdings.

Author

Seo, Dongwook and Mun, Seongjae

Subjects
ECONOMIC uncertainty, SOCIAL capital, CASH position of corporations, ECONOMIC policy
Abstract

This study examines the moderating effect of social capital on the association between economic policy uncertainty (EPU) and cash holdings. Using a sample of US-listed firms from 1990 to 2018, social capital is found to have a positive moderating effect on the association between EPU and cash holdings. Our finding is robust even if we use alternative measures of cash, EPU, and social capital. Based on these outcomes, we suggest that firms located in a county with a high level of social capital endure high EPU by raising cash easily. [ABSTRACT FROM AUTHOR]

Published
2022
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29. Gate‐Controlled Rectifying Direction in PdSe2 Lateral Heterojunction Diode.

Author

Seo, Dongwook, Seo, Jae Eun, Das, Tanmoy, Kwak, Joon Young, and Chang, Jiwon

Subjects
HETEROJUNCTIONS, BAND gaps, DIODES, LOGIC circuits, PALLADIUM
Abstract

The thickness‐dependent band structure of 2D materials has enabled the construction of in‐plane lateral heterojunction within the same material platform. Simply forming regions of the same 2D material with different thicknesses induces the band offsets in energy bands at the interface to complete the heterojunction. Especially, pentagonal palladium diselenide (PdSe2) can create various combinations of different band gaps due to its widely tunable band gap ranging from 0 to ≈1.3 eV. Here, a PdSe2‐based gate‐controlled rectifier diode realized simply by creating the lateral heterojunction using as‐exfoliated PdSe2 flake composed of different thickness regions are reported. Interestingly, by tailoring the heterojunction architecture with a certain combination of the thicknesses, a unique gate‐controlled rectification can be observed where the rectifying direction can be tuned by the applied gate bias. The different gate modulation levels in the thin and thick regions leads to the different band bending, respectively. Therefore, adjusting the heterojunction barrier height by the gate bias makes it possible to modulate the direction of dominant current. The demonstration of the reversible rectifying direction paves the way for the realization of essential component in the tunable logic gate. [ABSTRACT FROM AUTHOR]

Published
2021
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30. 24.3 A Voltage and Temperature Tracking SRAM Assist Supporting 740mV Dual-Rail Offset for Low-Power and High-Performance Applications in 7nm EUV FinFET Technology

Author

Lee, Inhak, primary, Jeong, Hanwool, additional, Baeck, Sangyeop, additional, Gupta, Siddharth, additional, Park, Changnam, additional, Seo, Dongwook, additional, Choi, Jaesung, additional, Kim, Jaeyoung, additional, Kim, Hoon, additional, Kang, Jungmyung, additional, Jang, Sunyung, additional, Moon, Daeyoung, additional, Han, Sangshin, additional, Kim, Taehyung, additional, Lim, Jaehyun, additional, Park, Younghwan, additional, Hwang, Hyejin, additional, Kang, Jeonseung, additional, Choi, Jaeseung, additional, and Song, Taejoong, additional

Published
2019
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33. Tunable Current Transport in PdSe2 via Layer‐by‐Layer Thickness Modulation by Mild Plasma.

Author

Das, Tanmoy, Seo, Dongwook, Seo, Jae Eun, and Chang, Jiwon

Subjects
FIELD-effect transistors, NANOFABRICATION, RAMAN spectroscopy
Abstract

The thickness‐modulated phase transition from semi‐metallic (bulk) to semiconductor (a few layers) is the most unique property of pentagonal palladium diselenide (PdSe2). Thus, precise thickness tailoring is essential to fully utilize its unique thickness‐dependent property for exotic device applications. Here, tunable current transport in PdSe2 based field‐effect transistors (FETs) enabled by layer‐by‐layer thinning of PdSe2 using mild SF6:N2 plasma is presented. With this top‐down plasma‐etching method, the PdSe2 layer thickness can be precisely modulated without structural degradation, which paves the way to realize the complete potential of PdSe2‐based devices. By modifying the plasma power and exposure time, an atomic layer precision etching rate of 0.4 nm min−1 can be achieved. Atomic‐force microscopy, Raman spectroscopy, and secondary ion mass spectrometry confirm the uniform and complete removal of top layers of PdSe2 flake over a large area without affecting remaining bottom layers. Electrical characterization of current transport in plasma‐thinned PdSe2 FETs reveals excellent layer‐dependent conductivity similar to pristine PdSe2 FETs. This simple but highly scalable and controllable plasma‐etching technique provides a promising way to fabricate PdSe2 devices based on lateral heterostructures composed of different thicknesses PdSe2 flakes to exploit strongly thickness‐dependent electronic structures. [ABSTRACT FROM AUTHOR]

Published
2020
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35. Real-time flood detection for video surveillance

Author

Cáceres Hernández, Danilo, Hyun Jo, Kang, Filonenko, Alexander, and Seo, Dongwook

Subjects
Surveillance, ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION, Cameras, Real-time systems, Graphics processing units, Image color analysis, Floods, Probability
Abstract

This paper introduces the real-time flash flood detection method for stationary surveillance cameras. It can be applied for rural and urban areas and capable of working during day time. The background subtraction was used to detect all changes appear in a scene. After this step, many pixel belonging to the same moving objects may be divided. They are united by morphological closing. Too small separate objects are then removed form the scene. Color probability was calculated for all the pixels belonging to a foreground mask and connected components with low probability value were filtered out. Finally, results were improved by edge density and boundary roughness. The most time consuming step was implemented in parallel using CUDA. Real-time performance was achieved in this way. The algorithm was tested on publicly accepted video. This paper introduces the real-time flash flood detection method for stationary surveillance cameras. It can be applied for rural and urban areas and capable of working during day time. The background subtraction was used to detect all changes appear in a scene. After this step, many pixel belonging to the same moving objects may be divided. They are united by morphological closing. Too small separate objects are then removed form the scene. Color probability was calculated for all the pixels belonging to a foreground mask and connected components with low probability value were filtered out. Finally, results were improved by edge density and boundary roughness. The most time consuming step was implemented in parallel using CUDA. Real-time performance was achieved in this way. The algorithm was tested on publicly accepted video.

Published
2015

36. Doping-Free All PtSe2Transistor via Thickness-Modulated Phase Transition

Author

Das, Tanmoy, Yang, Eunyeong, Seo, Jae Eun, Kim, Jeong Hyeon, Park, Eunpyo, Kim, Minkyung, Seo, Dongwook, Kwak, Joon Young, and Chang, Jiwon

Abstract

Achieving a high-quality metal contact on two-dimensional (2D) semiconductors still remains a major challenge due to the strong Fermi level pinning and the absence of an effective doping method. Here, we demonstrate high performance “all-PtSe2” field-effect transistors (FETs) completely free from those issues, enabled by the vertical integration of a metallic thick PtSe2source/drain onto the semiconducting ultrathin PtSe2channel. Owing to its inherent thickness-dependent semiconductor-to-metal phase transition, the transferred metallic PtSe2transforms the underlying semiconducting PtSe2into metal at the junction. Therefore, a fully metallized source/drain and semiconducting channel could be realized within the same PtSe2platform. The ultrathin PtSe2FETs with PtSe2vdW contact exhibits excellent gate tunability, superior mobility, and high ON current accompanied by one order lower contact resistance compared to conventional Ti/Au contact FETs. Our work provides a new device paradigm with a low resistance PtSe2vdW contact which can overcome a fundamental bottleneck in 2D nanoelectronics.

Published
2021
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46. Real-time lane marking detection

Author

Filonenko, Alexander, primary, Hernandez, Danilo Caceres, additional, Kurnianggoro, Laksono, additional, Seo, Dongwook, additional, and Jo, Kang-Hyun, additional

Published
2015
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