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Your search keyword '"Semiconductor photodetector"' showing total 2 results
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2 results on '"Semiconductor photodetector"'

1. Observation of photoinduced shot noise in planar Mo/n-Si/Mo structures with undepleted region

Author

Niemcharoen, S., Ando, T., Supadech, S., Yasumura, Y., and Sato, K.

Subjects
*METALS, *SEMICONDUCTORS, *CURRENT noise (Electricity)
Abstract

Measurements of low frequency shot noise due to photoinduced currents have been carried out on planar molybdenum/n-type silicon/molybdenum structures having long neutral region and Schottky barriers at both ends. Measurements were performed in the frequency range between 1 and 200 kHz at room temperature. The observed shot noise was found to be lower than the level of full shot noise. That is, when the current noise is expressed as S(ω)=2qIΓ2 (q, the electronic charge; I, the average current), the noise factor, Γ2, was estimated to be around 0.9, which is smaller than unity corresponding to so-called full shot noise. These results are attributed to the decay of autocorrelation effect in the current component photoinduced in the neutral region. [Copyright &y& Elsevier]

Published
2002
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2. Role of Ge nanoclusters in the performance of photodetectors compatible with Si technology

Author

C. Spinella, Salvatore Cosentino, Maria Miritello, Pei Liu, Domenico Pacifici, Sunghwan Lee, Salvo Mirabella, Giuseppe Nicotra, Antonio Terrasi, Son T. Le, David C. Paine, Isodiana Crupi, Alexander Zaslavsky, Cosentino, S., Mirabella, S., Liu, P., Le, S.T., Miritello, M., Lee, S., Crupi, I., Nicotra, G., Spinella, C., Paine, D., Terrasi, A., Zaslavsky, A., and Pacifici, D.

Subjects
Nanocluster, Materials science, chemistry.chemical_element, Photodetector, Germanium, Photoconductive gain, Settore ING-INF/01 - Elettronica, Nanoclusters, Response time (computer systems), Germanium, High-efficiency photodetector, High-efficiency photodetectors, Sparse array, High-efficiency, Response time, Materials Chemistry, Gain, business.industry, Photoconductivity, Internal quantum efficiency, Metals and Alloys, Surfaces and Interfaces, Photon, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Recombination center, chemistry, Semiconductor photodetector, Optoelectronics, Spectral response, Quantum efficiency, business, Excitation, Spectral responsivity, Nanocluster
Abstract

In this work, we investigate the spectral response of metal-oxide- semiconductor photodetectors based on Ge nanoclusters (NCs) embedded in a silicon dioxide (SiO2) matrix. The role of Ge NC size and density on the spectral response was evaluated by comparing the performance of PDs based on either densely packed arrays of 2 nm-diameter NCs or a more sparse array of 8 nm-diameter Ge NCs. Our Ge NC photodetectors exhibit a high spectral responsivity in the 500-1000 nm range with internal quantum efficiency of ~ 700% at - 10 V, and with NC array parameters such as NC density and size playing a crucial role in the photoconductive gain and response time. We find that the configuration with a more dispersed array of NCs ensures a faster photoresponse, due to the larger fraction of electrically-active NCs and the partial suppression of recombination centers. The photoconduction mechanism, assisted by trapping of photo-generated holes in Ge NCs, is discussed for different excitation power and applied bias conditions. Our results provide guidelines for further optimization of high-efficiency Ge NC photodetectors. © 2013 Elsevier B.V. All rights reserved.

Published
2013

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