22 results on '"Semiconducting glasses"'
Search Results
2. Defects in Amorphous and Organic Semiconductors
- Author
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Böer, Karl W., Pohl, Udo W., Böer, Karl W., and Pohl, Udo W.
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- 2018
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3. Estimation of Physical and Nonlinear Optical Parameters of Vanadate Glasses.
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Yadav, Sandeep, Kumari, Sonia, Barala, Monika, Mohan, Devendra, Dhar, Rakesh, and Chaudhary, S. K.
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NONLINEAR estimation , *NONLINEAR optics , *OPTICAL susceptibility , *REFRACTIVE index , *LORENZ equations , *OPTICAL switches , *KEGGIN anions - Abstract
Semiconducting Vanadate (V2O5 based) glass has plentiful application in the field of electrochemical batteries and optical switches. Theoretical investigation for density and molar volume are done for semiconducting glass with composition 60V2O5.(40-x) ZnO.xMoO3 (x=10,13,16,19,22). The density decreases from 4.168-4.057g/cm³ with increasing MoO3 content and an opposite behavior is observed for Molar volume. Using Lorentz- Lorenz equation index of refraction is calculated and found to be very high (4.103 to 3.920) and Oxide ion polarizability varies little in the range 2.6935- 2.6908ų. Using generalized Miller’s rule, third order nonlinear optical susceptibility found to be very high 2.39x10−6 to 1.61x10−6 esu. and Nonlinear Index of Refraction varies from 2.194x10−5 to 1.555x10−5esu. [ABSTRACT FROM AUTHOR]
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- 2019
- Full Text
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4. Thermoelectric Power (TEP) of Semiconducting Nickel-Phosphate Glasses.
- Author
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Tawati, D. M., Adlan, M. J. Basha., and Arof, A. K.
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NICKEL , *THERMOELECTRICITY , *SEMICONDUCTORS , *GLASS , *POLARONS - Abstract
The TEP of binary NiO-P2O5 bulk glasses of different compositions was measured. A specially design sample holder was used to measure the thermal EMF in the temperature range 303 to 530 K. The temperature difference between upper and lower surfaces maintained between 5 and 10 K. The investigations provide information on the polaron formation and the disorder energy due to random fields. The TEP found to be dependent on the NiO content and the temperature independent of TEP. Heikes’ formula for the TEP can give an adequate explanation for the experimental data. [ABSTRACT FROM AUTHOR]
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- 2010
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5. Investigation of mixed alkali effect on the DC electrical conductivity, structural, and physical properties of phosphate glasses containing MnO2.
- Author
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Song, Jun, Wu, Didi, Zhang, Chaoyue, Ming, Qing, and Imanzadeh, Mehdi
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PHOSPHATE glass , *ELECTRIC conductivity , *TELLURITES , *IONIC conductivity , *GLASS transition temperature , *PYROPHOSPHATES , *X-ray fluorescence - Abstract
Phosphate glasses with the compositions 40P 2 O 5 –10MnO 2 –(50– x)Li 2 O– x K 2 O (x = 5, 15, 25, 35, and 45 mol%) have been prepared by the conventional melt quenching technique. X-ray diffraction (XRD) patterns confirmed the amorphous nature of the samples. Elemental analysis of the glasses has been performed by X-ray fluorescence (XRF) spectroscopy. The mixed alkali effect (MAE) on the structural, physical, and electrical properties of the present glassy systems has been investigated. A nonlinear variation in density upon the incremental replacement of Li 2 O by K 2 O corroborated the operation of an MAE in modulating the structural properties. Fourier-transform infrared (FTIR) spectra revealed that the structures are mainly composed of metaphosphate and pyrophosphate units. Differential scanning calorimetry (DSC) has been performed to investigate the thermal behavior of the samples and to determine their glass transition temperatures (T g). DC electrical conductivity increased with increasing temperature, which proved the semiconducting nature of the glasses. It was found that ionic conductivity plays a greater role in determining the electrical properties of the systems than electronic conductivity. [Display omitted] • X-ray diffraction patterns confirmed the amorphous nature of the samples. • Nonlinear variation of the structural parameters was explained using Stevels' theory. • Replacement of Li by K ions leads to a change in the formation of nonbridging oxygen. • The MAE was clearly observed in the electrical properties. [ABSTRACT FROM AUTHOR]
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- 2022
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6. Instrumented indentation testing of arsenic triselenide–arsenic triiodide pseudobinary glasses with copper.
- Author
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Lukić-Petrović, Svetlana R., Đačanin, Ljubica R., Kisić, Radenko V., and Antić, Aleksandar M.
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GLASS ,COPPER ,IODINE ,OPTOELECTRONICS ,ARSENIC trioxide - Abstract
In this research, we performed experimental investigations of the influence of copper presence on hardness of arsenic triselenide (As2Se3)–arsenic triiodide (AsI3) pseudobinary glasses. The samples belong to the group of chalcogenide glasses, that, when compared with oxide glasses, can be synthesized much more easily in a wide variety of compositions, allowing also fine-tuning of their properties. Here, presence of iodine (I) facilitates glass formation, whereas addition of copper (Cu) creates possibility for interesting optoelectronic properties. As it is important to study mechanical properties of materials with respect to their fabrication and manipulation, we report results of instrumented indentation testing (IIT) of bulk samples of Cux[(As2Se3)0.9(AsI3)0.1]100−x with x = 5, 10, 20, and 25 at.% of Cu. This technique enables fast determination of indentation hardness, hardness value according to Vickers and indentation modulus directly from the indentation load–displacement curves. It was shown that all these parameters increase linearly with the increase of copper content. Improvement of the mechanical properties justifies the addition of Cu into the glass matrix. [ABSTRACT FROM PUBLISHER]
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- 2012
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7. Semiconducting glasses: A new class of thermoelectric materials?
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Gonçalves, A.P., Lopes, E.B., Delaizir, G., Vaney, J.B., Lenoir, B., Piarristeguy, A., Pradel, A., Monnier, J., Ochin, P., and Godart, C.
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TELLURIUM compounds , *SEMICONDUCTORS , *THERMOELECTRIC materials , *PERFORMANCE evaluation , *POTENTIAL theory (Physics) , *ELECTRIC conductivity , *METALLIC glasses - Abstract
Abstract: The deeper understanding of the factors that affect the dimensionless figure of merit, ZT, and the use of new synthetic methods has recently led to the development of novel systems with improved thermoelectric performances. Albeit up to now with ZT values lower than the conventional bulk materials, semiconducting glasses have also emerged as a new family of potential thermoelectric materials. This paper reviews the latest advances on semiconducting glasses for thermoelectric applications. Key examples of tellurium-based glasses, with high Seebeck coefficients, very low thermal conductivities and tunable electrical conductivities, are presented. ZT values as high as 0.2 were obtained at room temperature for several tellurium-based glasses with high copper concentrations, confirming chalcogenide semiconducting glasses as good candidates for high-performance thermoelectric materials. However, the temperature stability and electrical conductivity of the reported glasses are still not good enough for practical applications and further studies are still needed to enhance them. [Copyright &y& Elsevier]
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- 2012
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8. DC electrical conductivity of semiconducting cobalt–phosphate glasses
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Tawati, Daefalla M., Jamel Basha Adlan, M., and Abdullah, Mat Johar
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DIRECT currents , *ELECTRIC conductivity , *SEMICONDUCTORS , *COBALT glass , *PHOSPHATES , *LOW temperatures - Abstract
Abstract: The dc conductivity of semiconducting cobalt–phosphate glasses has been measured at temperatures ranging from 213 to 530K. Four bulk samples of CoO–P2O5 glasses of different compositions were produced by melting dry mixtures of analytical reagent grades of CoO and P2O5 at temperatures between 1200–1250°C for 2h using a press-quenching method from glass melt. Samples were annealed at 400°C for 1h. The dc conductivity was found to be dependent on the CoO content in the glass. At temperatures from 213 to 444K, however, both Mott''s variable-range hopping (VRH) and the Greaves'' intermediate range hopping models are found to be applicable. VRH at this range of temperatures is attributed to large values of the disorder energy of these glasses. [Copyright &y& Elsevier]
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- 2011
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9. STRUCTURE AND ELECTRICAL PROPERTIES OF SrO-BOROVANADATE (V2O5)z(SrO)0.2(B2O3)0.8-z GLASSES.
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MEKKI, A., KHATTAK, G. D., and SIDDIQUI, M. N.
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SEMICONDUCTORS , *STRONTIUM compounds , *ELECTRIC conductivity , *DIRECT currents , *FOURIER transform infrared spectroscopy - Abstract
SrO-borovanadate glasses with the nominal composition (V2O5)z(SrO)0.2( B2O3)0.8-z, 0.4≤z ≤0.8 were studied by direct current (DC) electrical conductivity, inductively coupled plasma (ICP) spectroscopy, Fourier transform infrared (FT-IR) spectroscopy and X-ray-powder-diffraction (XRD). These glasses were prepared by a normal quench technique and the actual compositions of the glasses were determined by ICP spectroscopy. XRD patterns confirm the amorphous nature of the present glasses. The temperature dependence of DC electrical conductivity of these glasses has been studied in terms of different hopping models. The IR results agree with previous investigations on similar glasses and it has been concluded that similar to SrO-vanadate glasses, metavandate chainlike structures of SrV2O6 and individual VO4 units also occur in these SrO-borovanadate glasses. The SrV2O6 and VOn polyhedra predominate in the low B2O3 containing SrO-borovanadate glasses as the B substitutes into the V sites of the various VOn polyhedra and only when the B2O3 concentration exceeds the SrO content do BOn structures appear. This qualitative picture of three distinct structural groupings for the Sr-vanadate and Sr-borovanadate glasses is consistent with the proposed glass structure on previous IR and extended X-ray absorption fine structure (EXAFS) studies on these types of glasses. The conductivity results were analyzed with reference to theoretical models existing in the literature and the analysis shows that the conductivity data are consistent with Mott's nearest neighbor hopping model. However, both Mott VRH and Greaves models are suitable to explain the data. Schnakenberg's generalized polaron hopping model is also consistent with the temperature dependence of the activation energy, but the various model parameters such as density of states, hopping energy obtained from the best fits were found to be not in accordance with the prediction of the Mott model. [ABSTRACT FROM AUTHOR]
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- 2010
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10. Investigation of structural, optical and transport properties of MoO3–PbO–B2O3 glasses
- Author
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Sanjay, Kishore, N., and Agarwal, A.
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METALLIC glasses , *OPTICAL properties of metals , *TRANSPORT properties of metal , *HEAVY metals , *METALLIC oxides , *SEMICONDUCTORS , *METAL quenching , *GLASS transition temperature - Abstract
Abstract: Heavy metal based oxide glasses of compositions xMoO3·(40− x)PbO·60B2O3 have been prepared by the standard melt-quenching technique. The various properties such as the glass transition temperature (T g), density, theoretical optical basicity, IR and DC conductivity have been studied. Amorphous nature of the present system was estimated by XRD patterns. The decrease in the density (d) and glass transition temperature (T g) is due to the lower degree of cross-bonding between the Molybdenum and non-bridging oxygen ions resulting in a weakening of glass network. The structural changes in these glasses have been monitored by IR spectroscopy. The effect of temperature on the DC conductivity has been measured in the temperature range 473–623K for all the compositions. The existence of a polaronic hopping conduction mechanism between Mo5+ and Mo6+ cations suggested that these glasses act as purely electronic semiconductor glasses. The values of theoretical optical basicity of these glasses have also been presented. [Copyright &y& Elsevier]
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- 2009
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11. Mechanism of hopping conduction in new CeO2–B2O3 semiconducting glasses
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Mansour, E., El-Egili, K., and El-Damrawi, G.
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HOPPING conduction , *SEMICONDUCTORS , *METALLIC glasses , *HIGH temperatures - Abstract
Abstract: CeO2–B2O3 glasses having a broad range of compositions, prepared by a press-quenching method from glass melts, were studied for DC conductivity. The conductivity at 583K (1000/T=1.715K−1), ln σ 583, increases by about 16% in the composition regime 20–50mol% CeO2 while in the composition range 50–60mol% CeO2, ln σ 583 decreases by about 28%. The behavior of ln σ 583 with composition can be interpreted in terms of the changes in the high-temperature activation energy W and the hopping distance, R. Between 20 and 50mol% CeO2, increasing the mechanical strength and cross-linking of the glass network results in decreasing the polaron hopping energy, W H. At higher concentrations, the breaking of the 3D network observed to be probable for these glasses may increase the disorder energy, W D. The conduction mechanism is found to be non-adiabatic in nature for glasses investigated. Mott''s model for the small polaron hopping conduction between nearest-neighbors gives unreasonable values for the Ce–Ce distance and the phonon frequency of the lattice vibrations. The increase in the conductivity with temperature can be interpreted in terms of the Schnakenberg model for optical multiphonon assisted hopping process at high temperatures and single optical phonon process at the lower ones. This model gives reasonable values for the phonon frequency of the lattice vibrations, the polaron hopping energy, and slightly higher values of W D. [Copyright &y& Elsevier]
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- 2007
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12. Mössbauer spectroscopy and electrical transport properties of iron doped sodium lead borate glasses
- Author
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Abdel-Wahab, F., Mostafa, A.G., Belal, A.E., and El-Agwany, E.M.
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SOLUTION (Chemistry) , *SPECTRUM analysis , *METALLIC oxides , *PROPERTIES of matter - Abstract
Abstract: Mössbauer Effect (ME) spectroscopy, density and molar volume as well as electrical transport measurements were employed to investigate the glass system: (70− x) mol% B2O3· (x) mol% Pb3O4·10mol% Fe2O3·20mol% Na2O [with 0≤ x ≤35]. Both ME and density were measured at room temperature but conductivity measurements were carried out in the temperature range from 320 to 560K at four fixed frequencies [0.12, 1, 10 and 100kHz]. The ME results showed that, in the lead free sample only, about 80.8% of the total iron act mostly as glass network modifier (GNM), while the rest precipitated as α-Fe2O3. As lead oxide was just introduced into the glass, it assists to dissolve all iron ions through the glass network and iron ions start directly to occupy glass network former (GNF) positions. Both the density and the oxygen molar volume increased as lead oxide were increased. It was found also that the ac conductivity [σ (ω)] is higher than the dc conductivity (σ dc ) at low temperatures, whereas at high temperatures, σ (ω) approaches σ dc at all frequencies. These results were explained in terms of the percolation path approximation (PPA) model, due to the macroscopic inhomogenity of the glass network. A good agreement has been obtained between the experimental results and the theoretical fitting of PPA at low frequencies, while at high frequencies the results showed slight deviation. The dielectric constant and the dielectric loss were found in good agreement with the theoretical fitting of Cole–Cole equation. [Copyright &y& Elsevier]
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- 2005
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13. Switching behavior in V2O5–SrO–FeO glass system
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Aziz, M.S., Abdel-Wahab, F., Mostafa, A.G., and El-Agwany, E.M.
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FERROUS oxide , *GLASS , *STRONTIUM , *IRON oxides - Abstract
Abstract: The I–V characteristics and the electrical switching behavior for a bulk glass system of the composition (80-x)% V2O5–(x)% SrO–20% FeO [15≤x≤40], have been investigated at different temperatures. The studied glasses are found to exhibit a current controlled-negative resistance behavior of the threshold switching mode and the results are discussed in terms of the electrothermal model. It was concluded that the threshold voltage increased as SrO was gradually increased while it decreases when the temperature was increased. The activation energy for switching was found to decrease with the increase of SrO content. The field lowering coefficient β which was calculated experimentally appeared in agreement with that calculated from Poole–Frenkel equation βPF. [Copyright &y& Elsevier]
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- 2005
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14. The Impact of CuO on physical, structural, optical and thermal properties of dark VPB semiconducting glasses.
- Author
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Issever, U.G., Kilic, G., and Ilik, E.
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GLASS , *TRANSITION metal oxides , *THERMAL properties , *FOURIER transform infrared spectroscopy , *OPTICAL properties , *DIFFERENTIAL scanning calorimetry - Abstract
In this study, V 2 O 5 , P 2 O 5 and B 2 O 3 oxide compounds, traditional glass formers, were used simultaneously and dark Cu-doped VPB glasses were successfully synthesized. Glass composition was determined as 46V 2 O 5 –46P 2 O 5 –(8-x)B 2 O 3 –xCuO (mol%) and undoped and Cu-doped glasses were synthesized with melt-quenching method. By changing the CuO and B 2 O 3 in the structure, it was investigated how the properties of the synthesized glasses change with the addition of transition metal oxide to the structure. Firstly, the physical properties of the synthesized glasses were determined such us density and molar volume. X-ray diffraction (XRD) and Fourier Transform Infrared Spectroscopy (FTIR) analyzes were performed to observe the changes of transition metal oxide additive to the glass structure. The optical band gaps and Urbach energies of the glass series that absorb the visible region and whose transmittance starts at approximately 1750 nm were calculated by using Tauc plot method. Finally, the thermal properties of the synthesized glasses were performed via differential scanning calorimetry (DSC). • Copper-doped vanadium phosphate boron (VPB) glasses were synthesized by using traditional melt-quenching method. • The densities of the synthesized Cu-doped VPB glasses have increased, while the molar volume values have a decreasing trend. • The transmittance and absorbance characteristics were measured and X-ray diffraction and Raman analyses were performed. • Direct and indirect optical band gaps, and Urbach energies of synthesized glasses were calculated. • Glass stability (GS) parameters were calculated using four different method. [ABSTRACT FROM AUTHOR]
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- 2021
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15. Thermoelectric power (TEP) of semiconducting CoO–NiO–P2O5 glasses
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Tawati, Daefalla M. and Jamel Basha Adlan, M.
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TERNARY system , *FUSION (Phase transformation) , *TRIETHYL phosphate , *TEMPERATURE , *SURFACES (Technology) - Abstract
Five bulk samples of ternary CoO–NiO–P2O5 glasses were prepared by a press-quenching method from glass melt. TEP measurements have been made on annealed samples using a specially design sample holder in the temperature range 303–530 K. The temperature difference between upper and lower surfaces was maintained between 5 and 10 K. The investigations provide information on the polaron formation and the disorder energy due to random fields. TEP was found to be independent of temperature. [Copyright &y& Elsevier]
- Published
- 2004
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16. Semiconducting glasses: A new class of thermoelectric materials?
- Author
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António Pereira Gonçalves, Annie Pradel, Andrea Piarristeguy, Bertrand Lenoir, Elsa B. Lopes, Claude Godart, Patrick Ochin, Judith Monnier, Jean-Baptiste Vaney, Gaëlle Delaizir, Instituto Tecnológico e Nuclear, Instituto Superior Técnico, Universidade Técnica de Lisboa (IST), Axe 3 : organisation structurale multiéchelle des matériaux (SPCTS-AXE3), Science des Procédés Céramiques et de Traitements de Surface (SPCTS), Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM), Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut Jean Lamour (IJL), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), Institut Charles Gerhardt Montpellier - Institut de Chimie Moléculaire et des Matériaux de Montpellier (ICGM ICMMM), Ecole Nationale Supérieure de Chimie de Montpellier (ENSCM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Université Montpellier 1 (UM1)-Université Montpellier 2 - Sciences et Techniques (UM2)-Institut de Chimie du CNRS (INC), Institut de Chimie et des Matériaux Paris-Est (ICMPE), Université Paris-Est Créteil Val-de-Marne - Paris 12 (UPEC UP12)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), Université Montpellier 1 (UM1)-Université Montpellier 2 - Sciences et Techniques (UM2)-Ecole Nationale Supérieure de Chimie de Montpellier (ENSCM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and Institut de Chimie du CNRS (INC)-Université Paris-Est Créteil Val-de-Marne - Paris 12 (UPEC UP12)-Centre National de la Recherche Scientifique (CNRS)
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Materials science ,Chalcogenide ,Mineralogy ,chemistry.chemical_element ,02 engineering and technology ,010402 general chemistry ,01 natural sciences ,Inorganic Chemistry ,chemistry.chemical_compound ,Thermal conductivity ,Electrical resistivity and conductivity ,Thermal ,Thermoelectric effect ,Materials Chemistry ,Physical and Theoretical Chemistry ,High copper ,Semiconducting glasses ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Thermoelectric materials ,Engineering physics ,0104 chemical sciences ,Electronic, Optical and Magnetic Materials ,chemistry ,Ceramics and Composites ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,0210 nano-technology ,Tellurium ,Thermoelectric glasses - Abstract
International audience; The deeper understanding of the factors that affect the dimensionless figure of merit, ZT, and the use of new synthetic methods has recently led to the development of novel systems with improved thermoelectric performances. Albeit up to now with ZT values lower than the conventional bulk materials, semiconducting glasses have also emerged as a new family of potential thermoelectric materials. This paper reviews the latest advances on semiconducting glasses for thermoelectric applications. Key examples of tellurium-based glasses, with high Seebeck coefficients, very low thermal conductivities and tunable electrical conductivities, are presented. ZT values as high as 0.2 were obtained at room temperature for several tellurium-based glasses with high copper concentrations, confirming chalcogenide semiconducting glasses as good candidates for high-performance thermoelectric materials. However, the temperature stability and electrical conductivity of there ported glasses are still not good enough for practical applications and further studies are still needed to enhance them.
- Published
- 2012
- Full Text
- View/download PDF
17. A Center of Competence in Solid State Materials and Devices
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FLORIDA UNIV GAINESVILLE DEPT OF ELECTRICAL ENGINEERING, Lindholm, Fred A, Brodersen, Arthur J, Chenette, Eugene R, Director, Stephen W, Gould, Robert W, FLORIDA UNIV GAINESVILLE DEPT OF ELECTRICAL ENGINEERING, Lindholm, Fred A, Brodersen, Arthur J, Chenette, Eugene R, Director, Stephen W, and Gould, Robert W
- Abstract
Contents: Physical origins of burst noise in transistors; Noise in phototransistors and photodiodes; Impurity concentration dependent density of states at the Fermi level; Recombination and trapping of the photo-excited carriers in gold-doped silicon; Unified modeling of field-effect devices; Simultaneous automated ac and dc design of linear semiconductor integrated circuit amplifiers; The effect of crystallization on the strength of Li2O-SiO2 glass-ceramics; The early stages of crystallization in a Li2O-SiO2 glass; Electrical properties of glass; Solid solution decomposition of aluminum-rich aluminum-zinc-silver alloys; Metal tip holder for field-ion microscope., See also report dated 10 Mar 1970, AD0711848. Sponsored in part by DARPA.
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- 1970
18. Characterization of Semiconducting Glasses for Use as Bolocon Layers.
- Author
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CALIFORNIA UNIV LOS ANGELES SCHOOL OF ENGINEERING AND APPLIED SCIENCE, Mackenzie,J. D., CALIFORNIA UNIV LOS ANGELES SCHOOL OF ENGINEERING AND APPLIED SCIENCE, and Mackenzie,J. D.
- Abstract
The report evaluates all the factors governing the electronic conductivity, the activation energy for conduction, and the dielectric constant of glasses as well as their interdependence in order to assess the possibility of developing a glass with certain characteristics as outlined in the text. Because no theoretical treatments have been published which may be used as a guidance for the preparation of the glasses of the desired properties, theoretical studies and experimental preparation of new glasses were undertaken. Although both oxide and non-oxide glasses were measured, emphasis was ultimately placed on oxide glasses. Preliminary calculations of fluoride and chalcogenide glasses imply that these are able to exceed the oxide glasses. (Modified author abstract)
- Published
- 1973
19. A STUDY OF THE ANOMALOUS HALL EFFECT IN THE CHALCOGENIDE SEMICONDUCTOR GLASS SYSTEMS.
- Author
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AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING, Kurtz,Dennis W., AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OHIO SCHOOL OF ENGINEERING, and Kurtz,Dennis W.
- Abstract
A study of one of the groups of amorphous semiconductors, the chalcogenide glasses, was made. From a review of existing literature, the physicochemical, electrical, thermal and optical properties of several of the typical glasses are presented quantitatively and discussed qualitatively. Several of the unusual features of the theorized band structure in these disordered systems are discussed. Several explanations of the Hall effect-Seebeck effect anomalies are reviewed. These include postulates on ambipolar and impurity-type conduction, as well as those on second phases and potential barriers. Several recommendations for further studies are given.
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- 1970
20. A CENTER OF COMPETENCE IN SOLID STATE MATERIALS AND DEVICES
- Author
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FLORIDA UNIV GAINESVILLE DEPT OF ELECTRICAL ENGINEERING, Lindholm,Fred A., Brodersen,Arthur J., Chenette,Eugene R., Dove,Derek B., Gould,Robert W., FLORIDA UNIV GAINESVILLE DEPT OF ELECTRICAL ENGINEERING, Lindholm,Fred A., Brodersen,Arthur J., Chenette,Eugene R., Dove,Derek B., and Gould,Robert W.
- Abstract
The report describes technical findings in three main areas. The first area concerns semiconductors and semiconductor devices. Noise in integrated operational amplifiers is characterized, with special emphasis given to burst noise. Measurements are made of the photomagnetoelectric and photoconductive effects in n-type silicon at cryogenic temperatures and attendant theory is developed. Another study delineates issues basic to device modeling for the computer-aided analysis and design of integrated circuits. The second main area deals with measurement techniques. Use of the field ion microscope is discussed for the analysis of dislocations and stacking faults in crystals. A new method for studying the structure of thin films during the earliest stages of growth is described; the techniques of electrically recording diffraction patterns are reviewed and applied to characterizing surfaces and surface layers on an atomic scale. The application of quantitative dielectric relaxation receives attention as an analytical tool in the investigation of insulating and semiconducting materials. The third main area concerns insulating and semiconducting glasses. One study describes the effects of neutron bombardment on nucleation and growth processes. Another deals with the information on the nucleation sequence provided by hot-stage transmission microscopy of Lithia-silica glass. A final study reports concerning the effect of environment on the dielectric properties of high alumina substrates. (Author)
- Published
- 1969
21. High Temperature IR Glasses.
- Author
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MISSOURI UNIV ROLLA DEPT OF CERAMIC ENGINEERING, Kreidl,Norbert J., MISSOURI UNIV ROLLA DEPT OF CERAMIC ENGINEERING, and Kreidl,Norbert J.
- Abstract
Glasses in the system Si-As-Ag-Te-Se were found to have much higher softening temperatures than any chalcogenide glasses previously investigated. One heat treated glass had a softening temperature of 670C, which is 220 degrees higher than that of the Si-As-Se base glass. Ir transmission in relevant ranges was essentially maintained. Ag is instrumental in allowing the introduction of Se otherwise rejected in silicon chalcogenide glasses. The development of microstructure is more important than the intended increase in average bonding by the substitution of Se for Te. The microstructure involves glass-glass phase separation, with one of the phases having a much higher Tg, and, possibly, some microcrystallinity. (Modified author abstract), See also report dated 31 Aug 72, AD-749 958.
- Published
- 1973
22. A Center of Competence in Solid State Materials and Devices
- Author
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FLORIDA UNIV GAINESVILLE DEPT OF ELECTRICAL ENGINEERING, Lindholm, Fredrik A, Brodersen, Arthur J, Chenette, Eugene R, Hench, Larry L, Li, Sheng S, FLORIDA UNIV GAINESVILLE DEPT OF ELECTRICAL ENGINEERING, Lindholm, Fredrik A, Brodersen, Arthur J, Chenette, Eugene R, Hench, Larry L, and Li, Sheng S
- Abstract
The five-year research program sponsored by this contract has produced technical findings in several areas: Characterization of semiconductor devices and integrated circuits, electronic ceramics, quantum and electronic properties of semiconductors and related devices, noise in solids and in solid- state devices, magnetic films, high current regimes in transistor collector regions, quantum yield of p-i-n photodiodes, cluster model calculations of silicon defects, investigation of recombination and trapping processes in 3As2Se3-2Sb2Se3 amosphous films by photoconductivity method, and dielectric properties of lithium-disilicate glass-ceramics.
- Published
- 1972
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