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A sol-gel method was applied to prepare precursors for NdBa2Cu3O7-x (Nd-123) and SmBa2Cu3O7-x (Sm-123) superconducting compounds. The sintered products were examined by X-ray diffraction analysis (XRD) and scanning electron microscopy (SEM). The powders sintered at 950 and 1000 °C showed the formation of monophasic Nd-123 and Sm-123 superconductors. The formation of Nd-123 and Sm-123 phases from the sol-gel derived precursors at higher temperatures (1050 and 1100 °C), however, did not proceed due to the melting process. The correlation between the TC for different lanthanides (Ln Ho, Nd and Sm) in the Ln-123 compound and orthorhombicity and oxygen stoichiometry were also estimated.

Abstract Semiconductor nanoparticles (quantum dots) are promising fluorescent markers, but it is very little known about interaction of quantum dots with biological molecules. In this study, interaction of CdTe quantum dots coated with thioglycolic acid (TGA) with bovine serum albumin was investigated. Steady state spectroscopy, atomic force microscopy, electron microscopy and dynamic light scattering methods were used. It was explored how bovine serum albumin affects stability and spectral properties of quantum dots in aqueous media. CdTe–TGA quantum dots in aqueous solution appeared to be not stable and precipitated. Interaction with bovine serum albumin significantly enhanced stability and photoluminescence quantum yield of quantum dots and prevented quantum dots from aggregating.

Abstract Improving the performance of kesterite solar cells requires high-quality, defect-free CZTS(Se) films with a reduced number of secondary phases and impurities. Post-annealing of the CZTS films at high temperatures in a sulfur or selenium atmosphere is commonly used to improve the quality of the absorbing material. However, annealing at high-temperatures can promote material decomposition, mainly due to the loss of volatile elements such as tin or sulfur. In this work, we investigate how the additional step of sulfurization at reduced temperatures affects the quality and performance of CZTSSe based solar cells. A comprehensive structural analysis using conventional and high resolution XRD as well as Raman spectroscopy revealed that the highest CZTSSe material quality with the lowest structural disorder and defect densities was obtained from the CZTS films pre-sulfurized at 420 °C. Furthermore, we demonstrate the possibility of using Sb2Se3 as a buffer layer in the superstrate configuration of CZTSSe solar cells, which is possible alternative to replace commonly employed toxic CdS as a buffer layer. We show that the additional low-temperature selenization process and the successful use of Sb2Se3 as a buffer layer could improve the performance of CZTSSe-based solar cells by up to 3.48%, with an average efficiency of 3.1%.

This work presents the dielectric and ultrasonic properties of polydimethylsiloxane (PDMS) nanocomposites filled with titanium dioxide nanoparticles. The dielectric study was performed over a very broad range of frequencies (20 Hz–3 THz). The dielectric permittivity was almost frequency-independent in all the composites at room temperature over the whole range of measurement frequencies, and the dielectric losses were very low under these conditions (less than 2). The dielectric permittivity strongly increases with the nanoparticle concentration according to the Maxwell–Garnet model. Therefore, the investigated composites are suitable for various flexible electronic applications, particularly in the microwave and terahertz frequency ranges. Dielectric dispersion and increased attenuation of ultrasonic waves were observed at lower temperatures (below 280 K) due to the relaxation of polymer molecules at the PDMS/TiO2 interface and in the polymer matrix. The relaxation time followed the Vogel–Vulcher law, while the freezing temperature increased with the titanium dioxide concentration due to interactions between the polymer molecules and nanoparticles. The significant hysteresis in the ultrasonic properties indicated that titanium dioxide acts as a crystallization center. This is confirmed by the correlation between the hysteresis in the ultrasonic properties and the structure of the composites. The small difference in the activation energy values obtained from the ultrasonic and dielectric investigations is related to the fact that the dielectric dispersion is slightly broader than the Debye-type dielectric dispersion.

In the renewable energy field, the conversion of solar light into electrical or chemical energy is considered essential to moving towards a truly green energy economy. Solar energy can be harnessed not just through generating electricity with photovoltaic cells but also by driving photoelectrochemical (PEC) reactions such as water splitting or pollutant oxidation. In this study, TiO2 films were synthesized electrochemically through a procedure called plasma electrolytic oxidation (PEO). Under specific conditions, as the Ti substrate dissolves and the oxide film grows, electron discharges occur across the film, and this ionizes both the oxide and some amount of electrolyte that had been in contact with it. The mixture then cools, leaving a macroporous TiO2 structure. What is particularly interesting for PEC applications is that the films can be crystalline and doped after synthesis. XRD analysis revealed that a TiO2 film that had been obtained at a voltage of 200 V had an anatase crystal structure. In addition, during ionization and cooling, ions from the solution can be incorporated into the film. By adding 0.1 M Cu2SO4 into the synthesis electrolyte, we were able to incorporate Cu into the films, as proven EDX and XPS. The TiO2 and heterostructured films showed good PEC water-splitting activity and stability in alkaline media when illuminated with 365 nm LED light. It was found that the photocurrent obtained depends on the synthesis voltage and that the heterostructured films would generate ~2 times larger photocurrents. In addition, further surface functionalization (e.g., with Au) was investigated. Electron–hole recombination was evaluated using an advanced non-stationary photoelectrochemical technique—intensity-modulated photocurrent spectroscopy (IMPS). Generally, films have very little recombination and only at lower overpotentials up to ~1 V. Overall, the synthesis of oxide films through PEO may provide an efficient alternative to obtaining crystalline films via annealing, and various heterostructures can be created simply by modifying synthesis conditions.

Hafnium oxide (HfO2) films on silicon have the potential for application in photovoltaic devices. However, very little is known about the photoelectrochemical and protective properties of HfO2 films on Si. In this study, ultrathin films of HfO2 in the range of 15–70 nm were deposited on p-Si and Au substrates by atomic layer deposition (ALD). Grazing incidence X-ray diffraction (GI-XRD) identified the amorphous structure of the layers. Quartz crystal nanogravimetry (QCN) with Si and Au substrates indicated dynamics of electrolyte intake into the oxide film. No indications of oxide dissolution have been observed in acid (pH 3) and alkaline (pH 12) electrolytes. Mott–Schottky plots showed that the dark Si surface adjacent to the SiHfO2 interface is positively charged in an acid electrolyte and negatively charged in an alkaline electrolyte. The number of photoelectrons was determined to be much greater than the doping level of silicon. The cathodic photoactivity of the p-Si electrode protected by HfO2 films was studied with respect to the reaction of hydrogen reduction in acid and alkaline solutions. In acid solution, the film enhanced the reduction process when compared to that on the coating free electrode. The acceleration effect was explained in terms of prevention of silicon oxide formation, whose passivating capability is higher than that of hafnia films. In an alkaline electrolyte, an inhibition effect of the film was determined. Hafnia films protected Si from corrosion in this medium; however, at the same time, the film reduced electrode activity.

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This work presents the dielectric and ultrasonic properties of polydimethylsiloxane (PDMS) nanocomposites filled with titanium dioxide nanoparticles. The dielectric study was performed over a very broad range of frequencies (20 Hz–3 THz). The dielectric permittivity was almost frequency-independent in all the composites at room temperature over the whole range of measurement frequencies, and the dielectric losses were very low under these conditions (less than 2). The dielectric permittivity strongly increases with the nanoparticle concentration according to the Maxwell–Garnet model. Therefore, the investigated composites are suitable for various flexible electronic applications, particularly in the microwave and terahertz frequency ranges. Dielectric dispersion and increased attenuation of ultrasonic waves were observed at lower temperatures (below 280 K) due to the relaxation of polymer molecules at the PDMS/TiO2 interface and in the polymer matrix. The relaxation time followed the Vogel–Vulcher law, while the freezing temperature increased with the titanium dioxide concentration due to interactions between the polymer molecules and nanoparticles. The significant hysteresis in the ultrasonic properties indicated that titanium dioxide acts as a crystallization center. This is confirmed by the correlation between the hysteresis in the ultrasonic properties and the structure of the composites. The small difference in the activation energy values obtained from the ultrasonic and dielectric investigations is related to the fact that the dielectric dispersion is slightly broader than the Debye-type dielectric dispersion. [ABSTRACT FROM AUTHOR]

The results of colossal magnetoresistance (CMR) properties of La0.83Sr0.17Mn1.21O3 (LSMO) films grown by pulsed injection MOCVD technique onto various substrates are presented. The films with thicknesses of 360 nm and 60 nm grown on AT-cut single crystal quartz, polycrystalline Al2O3, and amorphous Si/SiO2 substrates were nanostructured with column-shaped crystallites spread perpendicular to the film plane. It was found that morphology, microstructure, and magnetoresistive properties of the films strongly depend on the substrate used. The low-field MR at low temperatures (25 K) showed twice higher values (−31% at 0.7 T) for LSMO/quartz in comparison to films grown on the other substrates (−15%). This value is high in comparison to results published in literature for manganite films prepared without additional insulating oxides. The high-field MR measured up to 20 T at 80 K was also the highest for LSMO/quartz films (−56%) and demonstrated the highest sensitivity S = 0.28 V/T at B = 0.25 T (voltage supply 2.5 V), which is promising for magnetic sensor applications. It was demonstrated that Mn excess Mn/(La + Sr) = 1.21 increases the metal-insulator transition temperature of the films up to 285 K, allowing the increase in the operation temperature of magnetic sensors up to 363 K. These results allow us to fabricate CMR sensors with predetermined parameters in a wide range of magnetic fields and temperatures.