1. Robustness of semimetallic transport properties of TaAs against off-stoichiometric disorder.
- Author
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Kawasuso, A., Suda, M., Murakawa, H., Komada, M., Suzuki, C., Amada, H., Michishio, K., Maekawa, M., Miyashita, A., Seko, N., Yamamoto, S., Oshima, N., Seki, S., and Hanasaki, N.
- Subjects
CHARGE carrier mobility ,POSITRON annihilation ,ANTISITE defects ,CARRIER density ,TRANSMISSION electron microscopes ,SINGLE crystals ,MAGNETORESISTANCE - Abstract
TaAs single crystals were grown by a standard chemical vapor transport method. The single-crystallinity and homogeneous distribution of elements were confirmed by transmission electron microscope and x-ray diffraction observations. Positron annihilation measurements revealed that the atomic vacancy concentration was kept below 10 − 5 at. %. However, inductively coupled plasma analysis showed an As-deficient (7–9 at. %) off-stoichiometry. First-principles calculations implied that the off-stoichiometry could be compensated for with excess Ta antisite defects, thereby inducing metallic states. Nevertheless, excellent semimetallic transport properties of a well-suppressed carrier density (≲ 10 18 cm − 3 ), ultrahigh carrier mobility (≳ 10 6 cm 2 /V/s), and large transverse magnetoresistance (> --> 200 000 % at 9 T) with the quantum oscillation were obtained at 1.7 K. This indicated the robustness of semimetallic transport properties against the off-stoichiometric disorder and the quenching of metallic conduction associated with excess Ta atoms. The negative longitudinal magnetoresistance, which is considered evidence of a Weyl semimetal (chiral anomaly), was not observed. These data were discussed with theoretical calculations. [ABSTRACT FROM AUTHOR]
- Published
- 2023
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