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Several recent studies have shown that SCAN, a functional belonging to the meta-generalized gradient approximation (MGGA) family, leads to significantly overestimated magnetic moments in itinerant ferromagnetic metals. However, this behavior is not inherent to the MGGA level of approximation since TPSS, for instance, does not lead to such severe overestimations. In order to provide a broader view of the accuracy of MGGA functionals for magnetism, we extend the assessment to more functionals, but also to antiferromagnetic solids. The results show that to describe magnetism there is overall no real advantage in using a MGGA functional compared to GGAs. For both types of approximation, an improvement in ferromagnetic metals is necessarily accompanied by a deterioration (underestimation) in antiferromagnetic insulators, and vice-versa. We also provide some analysis in order to understand in more detail the relation between the mathematical form of the functionals and the results.

We have studied the angular dependent de Haas-van Alphen oscillations of LaRu$_2$P$_2$ using magnetic torque in pulsed magnetic fields up to 60T. The observed oscillation frequencies are in excellent agreement with the geometry of the calculated Fermi surface. The temperature dependence of the oscillation amplitudes reveals effective masses m*($\alpha$)=0.71 and m*($\beta$)=0.99 m$_e$, which are enhanced over the calculated band mass by $\lambda^{cyc}$ of 0.8. We find a similar enhancement $\lambda^{\gamma} \approx 1$ in comparing the measured electronic specific heat ($\gamma = 11.5$ mJ/mol K$^2$) with the total DOS from band structure calculations. Remarkably, very similar mass enhancements have been reported in other pnictides LaFe$_2$P$_2$, LaFePO ($T_c \approx 4K$), and LaRuPO, independent of whether they are superconducting or not. This is contrary to the common perceptions that the normal state quasi-particle renormalizations reflect the strength of the superconducting paring mechanism and leads to new questions about pairing in isostructural and isoelectronic Ru- and Fe-pnictide superconductors., Comment: 4 pages, 4 figures

Multiferroic materials, in which ferroelectric and magnetic ordering coexist, are of fundamental interest for the development of multi-state memory devices that allow for electrical writing and non-destructive magnetic read-out operation. The great challenge is to create multiferroic materials that operate at room-temperature and have a large ferroelectric polarization P. Cupric oxide, CuO, is promising because of its large P ~ 10^{2} {\mu}C.m^{-2}, but is unfortunately only multiferroic in a temperature range of 20 K, from 210 to 230 K. Here, using a combination of density functional theory and Monte Carlo calculations, we establish that pressure-driven phase competition induces a giant stabilization of the multiferroic phase of CuO, which at 20-40 GPa becomes stable in a domain larger than 300 K, from 0 to T > 300 K. Thus, under high-pressure, CuO is predicted to be a room-temperature multiferroic with large polarization., Comment: 18 pages, 9 figures

The structural and electronic properties of the LaAlO3/Si(001) interface are determined using state-of-the-art electronic structure calculations. The atomic structure differs from previous proposals, but is reminiscent of La adsorption structures on silicon. A phase diagram of the interface stability is calculated as a function of oxygen and Al chemical potentials. We find that an electronically saturated interface is obtained only if dopant atoms segregate to the interface. These findings raise serious doubts whether LaAlO3 can be used as an epitaxial gate dielectric., Comment: 4 pages, 5 figures

The replacement of SiO2 by so-called high-k oxides is one of the major challenges for the semiconductor industry to date. Based on electronic structure calculations and ab-initio molecular dynamics simulations, we are able to provide a consistent picture of the growth process of a class of epitaxial oxides around SrO and SrTiO3. The detailed understanding of the interfacial binding principles has also allowed us to propose a way to engineer the band-offsets between the oxide and the silicon substrate., Comment: 6 pages, 6 figures, proceeding for the INFOS2005 conference (http://www.imec.be/infos/)

This paper reports state-of-the-art electronic structure calculations of La adsorption on the Si(001) surface. We predict La chains in the low coverage limit, which condense in a stable phase at a coverage of 1/5 monolayer. At 1/3 monolayer we predict a chemically rather inert, stable phase. La changes its oxidation state from La(3+) at lower coverages to La(2+) at coverages beyond 1/3 monolayer. In the latter oxidation state, one electron resides in a state with a considerable contribution from La-d and f states., Comment: 10 pages, 13 figures, 3 tables

The ability to follow Moore's Law has been the basis of the tremendous success of the semiconductor industry in the past decades. To date, the greatest challenge for device scaling is the required replacement of silicon dioxide-based gate oxides by high-k oxides in transistors. Around 2010 high-k oxides are required to have an atomically defined interface with silicon without any interfacial SiO2 layer. The first clean interface between silicon and a high-K oxide has been demonstrated by McKee et al. Nevertheless, the interfacial structure is still under debate. Here we report on first-principles calculations of the formation of the interface between silicon and SrTiO3 and its atomic structure. Based on insights into how the chemical environment affects the interface, a way to engineer seemingly intangible electrical properties to meet technological requirements is outlined. The interface structure and its chemistry provide guidance for the selection process of other high-k gate oxides and for controlling their growth. Our study also shows that atomic control of the interfacial structure can dramatically improve the electronic properties of the interface. The interface presented here serves as a model for a variety of other interfaces between high-k oxides and silicon., Comment: 10 pages, 2 figures (one color)

Metal deposition of Zr an a Si(001) surface has been studied by state-of-the-art electronic structure calculations. The energy per Zr adatom as a function of the coverage shows, that Zr forms silicide islands even at low coverages. Adsorbed Zr is thermodynamically unstable against the formation of bulk silicide ZrSi2. The observation that the islands consist of structural elements of the bulk silicide is an indication that silicide grains will form spontaneously.

This paper reports state-of-the-art electronic structure calculations on the deposition of strontium on the technologically relevant, (001) orientated silicon surface. We identified the surface reconstructions from zero to four thirds monolayers and relate them to experimentally reported data. A phase diagram is proposed. We predict phases at 1/6, 1/4, 1/2, 2/3 and 1 monolayers. Our results are expected to provide valuable information in order to understand heteroepitaxial growth of a prominent class of high-K oxides around SrTiO3. The insight obtained for strontium is expected to be transferable to other alkaline earth metals.

The full-potential linearized augmented-plane wave (FP-LAPW) method is well known to enable most accurate calculations of the electronic structure and magnetic properties of crystals and surfaces. The implementation of atomic forces has greatly increased it's applicability, but it is still generally believed that FP-LAPW calculations require substantial higher computational effort compared to the pseudopotential plane wave (PPW) based methods. In the present paper we analyse the FP-LAPW method from a computational point of view. Starting from an existing implementation (WIEN95 code), we identified the time consuming parts and show how some of them can be formulated more efficiently. In this context also the hardware architecture plays a crucial role. The remaining computational effort is mainly determined by the setup and diagonalization of the Hamiltonian matrix. For the latter, two different iterative schemes are compared. The speed-up gained by these optimizations is compared to the runtime of the ``original'' version of the code, and the PPW approach. We expect that the strategies described here, can also be used to speed up other computer codes, where similar tasks must be performed., Comment: 20 pages, 3 figures. Appears in Comp. Phys. Com. Other related publications can be found at http://www.rz-berlin.mpg.de/th/paper.html