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The potential of utilizing sunlight to drive the production of clean hydrogen fuel from seawater is promising. This study focuses on the development of Ni 3 C/Mn 0.5 Cd 0.5 S Schottky junctions with superior visible-light absorption and effective separation of photogenerated carriers. The synthesized material demonstrates a hydrogen evolution rate of 6472.9 μmol h−1 g−1 in simulated seawater, surpassing that of a single Mn 0.5 Cd 0.5 S by 11-fold. Furthermore, the composite displays notable hydrogen evolution rates in various water sources such as natural river water, groundwater, and tap water, indicating enhanced practical utility. This research introduces a cost-effective and efficient hydrogen evolution photocatalyst with significant potential for practical implementation, thereby facilitating the efficient conversion of solar-hydrogen energy. [Display omitted] • Ni 3 C/Mn 0.5 Cd 0.5 S exhibits superb photocatalytic H 2 evolution in simulated seawater. • Ni 3 C/Mn 0.5 Cd 0.5 S exhibits accelerated the separation of photogenerated carriers. • Ni 3 C/Mn 0.5 Cd 0.5 S photocatalyst is cheap and easy to obtain. Solar-powered seawater production of clean hydrogen fuel is highly prospective. In this work, Ni 3 C/Mn 0.5 Cd 0.5 S (NCMCS) Schottky junctions with excellent visible-light correspondence and photogenerated carrier separation properties are constructed using electrostatic attraction. The material achieves a hydrogen evolution rate of 6472.9 μmol h−1 g−1 in simulated seawater, which is 11 times higher than that of a single Mn 0.5 Cd 0.5 S (MCS). More attractively, the composite exhibits excellent hydrogen evolution rates in natural river water, groundwater and tap water, with significantly enhanced practical applicability. The underlying hydrogen evolution mechanism was extrapolated from a combination of experimental and theoretical calculations. The present work provides a low-cost and efficient hydrogen evolution photocatalyst for practical application, which can help promote the efficient conversion of solar-hydrogen energy. [ABSTRACT FROM AUTHOR]

[Display omitted] Photocatalytic nitrogen reduction reaction (NRR) is a sustainable process for ammonia synthesis under mild conditions. However, photocatalytic NRR activity and are generally limited by inefficient carrier separation and transfer. Therefore, parallel engineering of bulk phase doping and surface coupling is critical to achieving the goal of efficient NRR. In this study, Cl doped BiOBr nanosheet assemblies (BiOBr/Cl) were constructed in delicately designed deep eutectic solvents (DESs), combined with ionothermal methods at low temperatures and Bi3+ exsolution reduction strategy at high temperatures. The unique liquid state and reducibility of DESs induce the reduction of Bi3+ and the in situ coupling of Bi quantum dots at the surface of BiOBr/Cl nanosheets along with the construction of Bi-BiOBr/Cl nanosheet assemblies. The experimental results show that Cl doping could reduce the exciton dissociation energy and promote its dissociation to free carriers. Bi quantum dots could form tightly coupled Schottky junction with BiOBr/Cl enabling the efficient and unidirectional transmission of photogenerated electrons from BiOBr/Cl to metal Bi. The formed electron deficient region at Schottky interface promotes the adsorption and activation of N 2. The hierarchical structure of Bi-BiOBr/Cl nanosheet assembly benefits to providing more N 2 adsorption active sites. The DFT calculation shows that the accumulation of high concentration of active hydrogen in Bi-BiOBr/Cl leads to a significant decrease of energy barrier of the first step hydrogenation of N 2. Bi-BiOBr/Clis more inclined to adsorb nitrogen for NRR in comparison with H* for hydrogen production. The synergistic effect of Cl doping and Bi coupling result in a high NRR activity of Bi-BiOBr/Cl photocatalyst of 6.67 mmol·g−1·h−1, which was 11.3 times higher than that of initial BiOBr. This study provides a promising strategy for designing highly active NRR photocatalysts with high efficiency carrier dissociation and transport. [ABSTRACT FROM AUTHOR]

Organic photoelectrochemical transistor (OPECT) biosensor have become an advanced bioanalytical technology due to their superior performance. In this work, a novel target‐induced bipedal DNA walker‐mediated and In2S3/Ti3C2 (MXene) Schottky junction‐gated OPECT aptasensor is developed. The DNA walker is activated by recognition between the aptamer and the target, and then moved along a predetermined orbital interface, realizing the integration of target recognition and signal amplification detection, thus obtaining higher detection sensitivity and shorter detection duration. To validate the innovative nature of OPECT bioassays, signals are obtained on OPECT‐specific detection of dibutyl phthalate (DBP) as a target molecule through alkaline phosphatase ‐mediated ascorbic acid (AA) enrichment at the In2S3/MXene photosensitive gate. AA enrichment effectively depleted holes and enhanced the photoelectric response by inhibiting electron‐hole pair complexation, realizing effective modulation of the organic semiconductor poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate). The presented OPECT aptasensor achieved sensitive detection of DBP and provided a low detection limit of 0.18 fM based on the homogeneous, well‐integrated nature of aptamer recognition. Considering the detection of different toxicant molecules, it is expected to serve as a generalized tool with excellent performance. [ABSTRACT FROM AUTHOR]

The semiconducting ZnO photosensitizer and the metalloid Ni 3 ZnC 0.7 catalyst are chemically bonded through oxygen-atom bridges, thereby expediting the photogenerated electron flow from ZnO to Ni 3 ZnC 0.7 , regulating the electron cloud density at the catalytic sites, and facilitating the conversion of *COOH-CO. [Display omitted] • Zn oxide –O–Zn TMC structure was constructed via ligand competition of MOF. • Zn oxide –O–Zn TMC integrates photoexcitation, reaction sites and electron transport channels. • Zn oxide –O–Zn TMC modulates the surface electron density distribution. • Zn oxide –O–Zn TMC structure promotes the conversion of *COOH–CO products. • CO yield was 2674.8 μmol g-1h−1 with selectivity of 93.4 %. Developing carbon dioxide (CO 2) photocatalysts from transition metal carbides (TMCs) with abundant active sites, modulable electron cloud density, as well as low cost and high stability is of great significance for artificial photosynthesis. Building an efficient electron transfer channel between the photo-excitation site and the reaction-active site to extract and steer photo-induced electron flow is necessary but challenging for the highly selective conversion of CO 2. In this study, we achieved an oxygen-bridged Schottky junction between ZnO and Ni 3 ZnC 0.7 (denoted as Zn oxide –O–Zn TMC) through a ligand-vacancy strategy of MOF. The ZnO–Ni 3 ZnC 0.7 heterostructure integrates the photo-exciter (ZnO), high-speed electron transport channel (Zn oxide –O–Zn TMC), and reaction-active species (Ni 3 ZnC 0.7), where Zn oxide –O–Zn TMC facilitates the transfer of excited electrons in ZnO to Ni 3 ZnC 0.7. The Zn atoms in Ni 3 ZnC 0.7 serve as electron-rich active sites, regulating the CO 2 adsorption energy, promoting the transformation of *COOH to CO, and inhibiting H 2 production. The ZnO–Ni 3 ZnC 0.7 shows a high CO yield of 2674.80 μmol g–1h–1 with a selectivity of 93.40 % and an apparent quantum yield of 18.30 % (λ = 420 nm) with triethanolamine as a sacrificial agent. The CO production rate remains at 96.40 % after 18 h. Notably, ZnO–Ni 3 ZnC 0.7 exhibits a high CO yield of 873.60 μmol g–1h–1 with a selectivity of 90.20 % in seawater. [ABSTRACT FROM AUTHOR]

Efficient light absorption and photoinduced electron transfer from the g-C 3 N 4 (CN) continue to be an ongoing challenge in photocatalytic hydrogen production. Nanodimensional metallic cocatalysts can offer superior electron transport pathways, thereby augmenting photocatalytic activity. In our work metallic NiCo 2 O 4 (NCO) acts as an electron acceptor cocatalyst in a 2D-2D Schottky junction with CN and 0D silver (Ag) functions as a hot electron donor via the localized surface plasmon resonance phenomenon. The novel Ag–CN–NCO nanocomposite was shown to boost visible light absorption while inhibiting charge carrier recombination through optical experiments. The Ag–CN–NCO nanocomposite demonstrated superior photocatalytic activity compared to CN loaded with a single cocatalyst, producing hydrogen at a rate of approximately 2320 μmol/g/h. Additionally, Ag–CN–NCO produced a lower overpotential and almost five times more photocurrent density than CN, as demonstrated by photoelectrochemical studies. This work highlights the development of a novel charge transfer pathway by combining two co-catalysts with different functions and their combined action on the photocatalytic hydrogen production process. [Display omitted] • 0D Ag as an electron donor cocatalyst via LSPR effect. • 2D metallic NiCo 2 O 4 as an electron donor cocatalyst via Schottky junction. • Investigation of unique interfacial charge transfer pathway. • Synergistic effects of Schottky junction and LSPR as dual strategies. • Hydrogen production rate of 2320 μmol/g/h. [ABSTRACT FROM AUTHOR]

In water remediation applications ferroelectric materials have been shown wide applicability in catalysis due to their spontaneous polarization. 0.5Ba(Zr 0.2 Ti 0.8)O 3 – 0.5(Ba 0.7 Sr 0.3)TiO 3 (BST-BZT) pellets were examined for piezocatalysis activity by electrode effect. These samples were prepared using traditional solid-state reaction and sintering process. The samples were coated with silver paste using manual brushing resulting in Schottky junction having enhanced surface polarization and dye degradation capability. X-ray diffraction, Field emission scanning electron microscopy (FE SEM), and Raman spectroscopy were performed to confirm the phase, morphology and vibrational modes of prepared samples, respectively. Further, Diffuse reflectance spectra (DRS) and X-Ray Photoelectron spectroscopy (XPS) was done to check absorbance and chemical composition. Piezocatalysis activity on electrode sample was observed under 150W and 40 kHz ultrasonication. Well dried samples showed enhanced dye degradation of 68 %. It could be due to additional charges developed at the interface which act as Schottky junction along with triboelectric phenomenon. This highlights the significant impact of Schottky junction in electrode effect by enhancing the piezocatalytic activity. [ABSTRACT FROM AUTHOR]

High electrical conductivity and optical transparency make graphene a suitable candidate for photovoltaic-based power systems. In this study, we present the design and fabrication of an array of graphene-based Schottky junction solar cells. Using mainstream semiconductor manufacturing methods, we produced 96 solar cells from a single 100 mm diameter silicon wafer that was precoated with an oxide layer. The fabrication process involves removing the oxide layer over a select region, depositing metal contacts on both the oxide and bare silicon regions, and transferring large-area graphene onto the exposed silicon to create the photovoltaic interface. A single solar cell can provide up to 160 μA of short-circuit current and up to 0.42 V of open-circuit voltage. A series of solar cells are wired to recharge a 3 V battery intermittently, while the battery continuously powers a device. The solar cells and rechargeable battery together form a power system for any 3-volt low-power application. [ABSTRACT FROM AUTHOR]

As an emerging field, self‐powered photoelectrochemical (PEC) photodetectors have gradually attracted extensive attention thanks to the unique working characteristics of low preparation cost, strong tunability of device performance, and environmental friendliness. However, short absorption wavelength range, low efficiency of visible light utilization, and low responsivity remain challenges for performance improvements. Here, the PEC photodetectors based on the 2D BiVO4/MXene Schottky junction structure, which shows excellent performance with high photocurrent density (≈3.90 mA cm−2 at 0 VSCE under AM 1.5 G, 150 mW cm−2), good responsivity (790.2 mA W−1 under 447 nm), fast response time (tr/tf = 8/14 ms), and long‐term stability (keep 17 000 s and 22 000 cycles) are fabricated. These can be attributed to the built‐in electric field at the BiVO4/MXene Schottky junction interface, which accelerates the transfer of photogenerated electrons and holes, and inhibits interfacial charge recombination. Additionally, the MXene nanosheets improve the absorption of visible‐light‐induced photons on the valence band of BiVO4. These excellent properties show that this work provides a scientific experimental reference for the further development of PEC photodetectors. [ABSTRACT FROM AUTHOR]

One‐dimensional scanning optical beam‐induced current (OBIC) measurements have been carried out on polymer bulk heterojunction (BHJ) photovoltaic cells with a planar, or lateral configuration. The planar P3HT:PCBM cells have parallel aluminum or gold electrodes that are 390 to 560 micrometers apart. When a focused laser beam is scanned across the electrode gap, photocurrent or photovoltage is recorded as a function of beam position along with the transmission of the excitation beam. Despite the large electrode gap size, cells with symmetric Al/Al electrodes exhibit significant photocurrent and photovoltage which are the highest at the electrode interfaces and null at the cell center. The OBIC in these large planar polymer BHJ cells is attributed to the metal/BHJ blend Schottky junction. The larger Schottky barrier of the Al/BHJ junction gives rise to a stronger OBIC response than the Au/BHJ junction. The photocurrent and photovoltage always have opposite signs and are antisymmetric about the cell center. In asymmetric Al/Au cells, the electrode work function difference contributes an additional built‐in field/potential drop and significantly modifies the photocurrent and photovoltage profiles. The depletion width of the Al/BHJ Schottky junction is 110–120 μm, while the minority electron diffusion length is determined to be 43.8 μm. [ABSTRACT FROM AUTHOR]

The exploration of semiconductor nanostructures utilizing mixed metal materials is an emerging area of study across fields including field‐effect transistors, chemical sensors, photodetectors, photocatalysts, and many more. In this study, Schottky diodes based on ZnFe2O4 (ZFO) were constructed with an aim to tune their electronic and optoelectronic characteristics. Here, Ni doping facilitated the tuning of electronic properties, leading to a significant increase in the rectification ratio from 238 to 1172, along with a reduction in the potential barrier height from 0.67 V to 0.65 V. This is attributed to Ni's role as a charge carrier in ZFO, enhancing carrier concentration, confirmed by Mott‐Schottky analysis. The 5 mol % Ni‐doped ZFO also exhibited remarkable light sensitivity, with its rectification ratio surging to 1795 under illumination, four times that of the undoped version. Additionally, its photo‐sensitivity soared to 42.46 %, nearly quadrupling the undoped device's performance, and its power gain impressively climbed to 38.4 %, which is over twelvefold the undoped sample's output. Furthermore, the diode responds strongly to optical illumination, making this structure suitable for use as a photodiode or photosensor. Apart from that by employing a doping strategy, we achieved 64.61 % degradation of methylene blue dye under visible light in 120 minutes, compared to 36.85 % for the undoped sample. These indicate that hydrothermally synthesized Ni‐doped ZFO is promising for visible light‐driven multifunctional applications. [ABSTRACT FROM AUTHOR]

In this research, an efficient two-valley Monte Carlo model simulates the Schottky junction. Impurity and phonon scatterings are considered, and impact ionization is included in the scattering matrix. Non-parabolic energy bands are assumed, and tunneling and thermionic emission are the current components. By adding a thin layer, it is shown that the formation of an electric field opposite to the electron motion direction at the junction boundary increases the effective height of the Schottky barrier. By changing the impurity concentration density of this thin layer, the change in the effective height of the Schottky barrier and consequently the simulated passing current is studied. A comparison of the results obtained from the simulation with valid scientific data confirms the correctness of the presented model. The proposed model can be widely used in the analysis of Schottky-based devices. [ABSTRACT FROM AUTHOR]

Abstract Dynamic random-access memory (DRAM) has been scaled down to meet high-density, high-speed, and low-power memory requirements. However, conventional DRAM has limitations in achieving memory reliability, especially sufficient capacitance to distinguish memory states. While there have been attempts to enhance capacitor technology, these solutions increase manufacturing cost and complexity. Additionally, Silicon-based capacitorless memories have been reported, but they still suffer from serious difficulties regarding reliability and power consumption. Here, we propose a novel Schottky barrier memory (SBRAM), which is free of the complex capacitor structure and features a heterojunction based on bandgap engineering. SBRAM can be configured as vertical cross-point arrays, which enables high-density integration with a 4F2 footprint. In particular, the Schottky junction significantly reduces the reverse leakage current, preventing sneak current paths that cause leakage currents and readout errors during array operation. Moreover, the heterojunction physically divides the storage region into two regions, resulting in three distinct resistive states and inducing a gradual current slope to ensure sufficient holding margin. These states are determined by the holding voltage (V hold) applied to the programmed device. When the V hold is 1.1 V, the programmed state can be maintained with an exceptionally low current of 35.7 fA without a refresh operation.

Self‐powered near‐infrared (NIR) photodetectors utilizing low‐dimensional materials are promising owing to their low‐power‐consumption and superior photoresponse performance. The strong light‐matter interaction and other intriguing physical mechanisms (such as high mobility, dangling‐bond‐free surface) in 2D semiconductor materials, combined with the flexible fabrication of device structures, create new opportunities for the optoelectronic devices. Here, a self‐powered NIR Schottky junction photodetector is demonstrated by vertically stacking 2D PtSe2 film atop an InP wafer. The strong built‐in electric field formed at PtSe2/InP interface endows the device with self‐powered operation with an ultralow dark current of 45 pA at room temperature under 0 V bias. The responsivity and detectivity at 940 nm illumination reach up to 0.718 A W−1 and 4.37 × 1012 Jones, respectively. Furthermore, TCAD simulations showed that the significant electric field at the PtSe2/InP interface is pivotal for its superior self‐powered detection performance. Remarkably, the device achieves a high Ilight/Idark ratio exceeding 105 and a fast response time of 4.35/5.66 µs, and sensitivity to NIR light polarization. This study provides a new perspective for the integration of hybrid 2D materials with 3D semiconductors in the next‐generation optoelectronic devices and integrated systems. [ABSTRACT FROM AUTHOR]

Emerging tribovoltaic nanogenerator (TVNG) technology, which can capture mechanical energy at dynamic semiconductor interfaces and generate instant direct current (DC) outputs, is considered promising to mitigate growing energy demand. However, the unsatisfactory charge excitation and extraction efficiency limit its electrical output stability and even practicability. Here, a novel strategy is proposed to synergistically modulate charge generation and transfer dynamics by integrating ferroelectric and photovoltaic effect with tribovoltaic effect, and thus a multi‐effect coupled Schottky TVNGs is, for the first time, developed. Research indicates that such coupling mechanism involving ferroelectric polarization, photoexcitation, and triboelectricity can allow TVNGs to jointly collect light and mechanical energy to excite more charges, and meanwhile, incorporation of strong electric fields can also be induced by controlled polarization to assist Schottky junction in modulating separation/extraction efficiencies of these charges. Ultimately, this multi‐effect coupled devices deliver impressive DC output of 7.3 V and 69.8 µA, outperforming similar coupled Schottky junction TVNGs. Besides that, its feasibility for multifunctional sensing and photodetection is also demonstrated. This study proposes an effective strategy for modulating performance while extending its functionality, which can expedite the development and potential application of advanced TVNGs. [ABSTRACT FROM AUTHOR]

Dynamic random-access memory (DRAM) has been scaled down to meet high-density, high-speed, and low-power memory requirements. However, conventional DRAM has limitations in achieving memory reliability, especially sufficient capacitance to distinguish memory states. While there have been attempts to enhance capacitor technology, these solutions increase manufacturing cost and complexity. Additionally, Silicon-based capacitorless memories have been reported, but they still suffer from serious difficulties regarding reliability and power consumption. Here, we propose a novel Schottky barrier memory (SBRAM), which is free of the complex capacitor structure and features a heterojunction based on bandgap engineering. SBRAM can be configured as vertical cross-point arrays, which enables high-density integration with a 4F2 footprint. In particular, the Schottky junction significantly reduces the reverse leakage current, preventing sneak current paths that cause leakage currents and readout errors during array operation. Moreover, the heterojunction physically divides the storage region into two regions, resulting in three distinct resistive states and inducing a gradual current slope to ensure sufficient holding margin. These states are determined by the holding voltage (Vhold) applied to the programmed device. When the Vhold is 1.1 V, the programmed state can be maintained with an exceptionally low current of 35.7 fA without a refresh operation. [ABSTRACT FROM AUTHOR]

A combined approach of band bending is employed to enhance the near‐infrared (NIR) photovoltaic (PV) response of a Si/Au Schottky junction (SHJ) device. As a reference, the basic architecture of the SHJ device consists of textured n‐Si and gold nanoparticles (Au NPs). Its photoelectric conversion efficiency at 1319 nm wavelength is 0.0302%. A series of band‐bending approaches are then applied to the reference device in sequence, aiming to minimize the electric loss of the structure by strengthening built‐in electric field. These approaches include introductions of an Al2O3 layer for front field passivation, a p+‐Si layer to form a p+n‐like junction at the front of the device and a SiO2 layer for rear field passivation. With these modifications, under 1319 nm illumination, the open‐circuit voltage eventually increases by 14%, the short‐circuit current increases by 18% and the photoelectric conversion efficiency of the device increases by 66% to reach 0.0501%. The results of this work propose a strategy to minimize the electric loss in an NIR PV device. [ABSTRACT FROM AUTHOR]

Tuning the surface properties of catalysts is an effective method for accelerating water electrolysis. Herein, we propose a directional doping and interfacial coupling strategy to design two surface-functionalized Schottky junction catalysts for coordinating the hydrogen evolution reaction (HER) and oxygen evolution reaction (OER). Directional doping with B/S atoms endows amphiphilic g-C3N4 with significant n-/p-type semiconductor properties. Further coupling with Fe3C modulates the energy band levels of B-C3N4 and S-C3N4, thus resulting in functionalized Schottky junction catalysts with specific surface-adsorption properties. The space-charge region generated by the dual modulation induces a local "OH-- and H+-enriched-environment, thus selectively promoting the kinetic behavior of the OER/HER. Impressively, the designed B-C3N4@Fe3C||S-C3N4@Fe3C pair requires only a low voltage of 1.52 V to achieve efficient water electrolysis at 10 ​mA ​cm-2. This work highlights the potential of functionalized Schottky junction catalysts for coordinating redox reactions in water electrolysis, thereby resolving the trade-off between catalytic activity and stability. [ABSTRACT FROM AUTHOR]

The prodigious employment of fossil fuels to conquer the global energy demand is becoming a dreadful threat to the human society. This predicament is appealing for a potent photocatalyst that can generate alternate energy sources via solar to chemical energy conversion. With this interest, we have fabricated a ternary heterostructure of Ti3C2 nanosheet modified g‐C3N4/Bi2O3 (MCNRBO) Z‐scheme photocatalyst through self‐assembly process. The morphological analysis clearly evidenced the close interfacial interaction between g‐C3N4 nanorod, Bi2O3 and Ti3C2 nanosheets. The oxygen vacancy created on Bi2O3 surface, as suggested by XPS and EPR analysis, supported the Z‐scheme heterojunction formation between g‐C3N4 nanorod and Bi2O3 nanosheets. The collaborative effect of Z‐scheme and Schottky junction significantly reduced charge transfer resistance promoting separation efficiency of excitons as indicated from PL and EIS analysis. The potential of MCNRBO towards photocatalytic application was investigated by H2O2 and H2 evolution reaction. A superior photocatalytic H2O2 and H2 production rate for MCNRBO is observed, which are respectively around 5 and 18 folds higher as compared to pristine CNR nanorod. The present work encourages for the development of a noble, eco‐benign and immensely efficient dual heterojunction based photocatalyst, which can acts as saviour of human society from energy crisis. [ABSTRACT FROM AUTHOR]

Converting carbon dioxide (CO2) into high-value-added chemicals using solar energy is a promising approach to reducing carbon dioxide emissions; however, single photocatalysts suffer from quick the recombination of photogenerated electron–hole pairs and poor photoredox ability. Herein, silver (Ag) nanoparticles featuring with localized surface plasmon resonance (LSPR) are combined with g-C3N4 to form a Schottky junction for photothermal catalytic CO2 reduction. The Ag/g-C3N4 exhibits higher photocatalytic CO2 reduction activity under UV-vis light; the CH4 and CO evolution rates are 10.44 and 88.79 µmol·h−1·g−1, respectively. Enhanced photocatalytic CO2 reduction performances are attributed to efficient hot electron transfer in the Ag/g-C3N4 Schottky junction. LSPR-induced hot electrons from Ag nanoparticles improve the local reaction temperature and promote the separation and transfer of photogenerated electron–hole pairs. The charge carrier transfer route was investigated by in situ irradiated X-ray photoelectron spectroscopy (XPS). The three-dimensional finite-difference time-domain (3D-FDTD) method verified the strong electromagnetic field at the interface between Ag and g-C3N4. The photothermal catalytic CO2 reduction pathway of Ag/g-C3N4 was investigated using in situ diffuse reflectance infrared Fourier transform spectra (DRIFTS). This study examines hot electron transfer in the Ag/g-C3N4 Schottky junction and provides a feasible way to design a plasmonic metal/polymer semiconductor Schottky junction for photothermal catalytic CO2 reduction. [ABSTRACT FROM AUTHOR]

Defect engineering in perovskite thin films has attracted extensive attention recently due to the films' atomic-scale modification, allowing for remarkable flexibility to design novel nanostructures for next generation nanodevices. However, the defect-assisted three-dimensional nanostructures in thin film matrices usually has large misfit strain and thus causes unstable thin film structures. In contrast, defect-assisted one- or two-dimensional nanostructures embedded in thin films can sustain large misfit strains without relaxation, which make them suitable for defect engineering in perovskite thin films. Here, we reported the fabrication and characterization of edge-type misfit dislocation-assisted two-dimensional BiMnOx nanochannels embedded in SrTiO3/La0.7Sr0.3MnO3/TbScO3 perovskite thin films. The nanochannels are epitaxially grown from the surrounding films without noticeable misfit strain. Diode-like current rectification was spatially observed at nanochannels due to the formation of Schottky junctions between BiMnOx nanochannels and conducting La0.7Sr0.3MnO3 thin films. Such atomically scaled heterostructures constitute more flexible ultimate functional units for nanoscale electronic devices.

This study employs a simple liquid-phase deposition method to grow TiO2 onto nanoscale silver wires, with a diameter of 90 nm and a length of 15∼20 μm. This core-shell structure possesses a high specific surface area, which enhances the gas reaction surface. Measurements can be conducted at room temperature. The main mechanism relies on the conductive properties of silver to transmit electrons, while Schottky barriers between Ag and TiO2 further accelerate oxygen ionization and surface redox reactions. This structure may contribute to enhancing the response value, response time, and recovery time of gas sensors.

Designing efficient narrow-band near-infrared photodetectors integrated on silicon for telecommunications remains a significant challenge in silicon photonics. This paper proposes a novel silicon-based hot-electron photodetector employing Tamm plasmons (Si-based TP-HE PD) for narrow-band near-infrared photodetection. The device combines a one-dimensional photonic crystal (1DPC) structure, an Au layer, and a silicon substrate with a back electrode. Simulation results show that the absorption of the TP device with a back electrode is 1.5 times higher than without a back electrode, due to increased absorption from multiple reflections between the back electrode and the 1DPC structure. Experimentally, the responsivity of the fabricated device reaches 0.195 mA/W at a wavelength of 1400 nm. A phenomenological model was developed to analyze the photoelectric conversion mechanism, revealing reasonable agreement between the theoretically calculated and experimentally measured internal quantum efficiencies. Additional experiments and simulations demonstrate the tunability of the resonance wavelength from 1200 nm to 1700 nm by adjusting structural parameters. The Si-based TP-HE PD shows potential for silicon-based optoelectronic applications, offering the advantages of a simple structure, low cost, and compatibility with silicon photonic integrated circuits. This work represents the first demonstration of a silicon-based hot electron NIR photodetector utilizing Tamm plasmons. [ABSTRACT FROM AUTHOR]

For the transformation of energy conversion and photocatalytic decomposition, photocatalyst-based artificial photosynthesis for solar-to green fuels and environmental treatment has aroused great attention. Herein, a novel ternary heterojunction based on constructing an interaction between 2D-graphitic carbon nitride (CN), 3D-strontium titanate (STO) and Pt nanoparticles (NPs) (2D/3D CN/STO@Pt) is designed for the first time to greatly promote photocatalytic water cracking hydrogen (H 2) evolution in an alkalescent environment, such as triethanolamine (TEO) as well as integrating with Rhodamin B (RhB) decomposition. Under optimized conditions, the H 2 productivity over 3D/2D CN/STO@Pt-3 heterostructures (10,005 μmol h−1 g−1) with an apparent quantum yield of H 2 production approaching 47.5% is found to be ∼29.7, 8.5, 1.1, and 1.5-fold as much as that in the CN, CN/STO, CN/STO@Pt-1, and CN/STO@Pt-5 heterojunctions, respectively. An up to 2.5-fold enhancement in the photocatalytic RhB decomposition rate, obtaining 90% within 60 min under visible-light-driven is observed for 3D/2D CN/STO@Pt-3 heterostructures, surpassing that of other samples. The CN/STO@Pt-3 sample shows the highest degradation rate of 3.5 min−1, which is 1.8, 2.8, 4.27 and 4.9 -time higher than that of the CN/STO@Pt-1, CN/STO@Pt-5, CN, and STO samples, respectively. The improved photocatalytic behavior of the heterogeneous structures could be ascribed to i) the type II-heterojunction between 2D CN and 3D STO; and ii) the creation of the Schottky contacts between semiconductors and Pt NPs. The configuration of the type-II heterojunction formed by the two semiconductors of 2D g-C 3 N 4 and 3D STO contributes to improved light absorption ability, and rapid separation and transfer of photoinduced charges. At the same time, the close junction of Pt establishes the Schottky barrier to facilitate efficient electron transfer in the ternary nanostructures, impeding the quick recombination of photoexcited charge carriers, and offering abundant reactive sites, contributing multiple electron pathways for the photoreaction strategy. Increased photocurrent density from the LSV measurement and a declined in PL intensity confirmed the enhanced interfacial charge separation in the tertiary photocatalyst. Furthermore, the CN/STO@Pt-3 ternary heterostructure presents outstanding photocatalytic performance after five cycles, indicating good stability and reusability. This work gives a valuable modification pathway for the establishing multi-channel charge carrier transport for energy conversion and environmental remediation processes. The diagram showing the photocatalytic activity of CN/STO@Pt heterostructures. [Display omitted] • The novel type II-Schottky structures of CN/STO@Pt were synthesized. • The RhB decomposition obtained 90% within 60 min under visible-light-driven. • The photocatalytic H 2 evolution rates reached 10,005 μmol h−1 g−1. • The photocatalytic activity of the ternary sample remains stable after four cycles. [ABSTRACT FROM AUTHOR]

Background and Objectives: Semiconductor junction-based radioisotope detectors are commonly used in radioisotope batteries due to their small size and excellent performance. This study aims to design a betavoltaic battery based on a metal-porous semiconductor Schottky structure, comprising an N-type zinc oxide (ZnO) semiconductor and platinum (Pt) metal. Methods: we utilized the TCAD-SILVACO 3D simulator to simulate the device, and a C-Interpreter code was applied to simulate the beta particle source, which was an electron beam with an average energy equivalent to 63Ni beta particles. The short circuit current, open-circuit voltage, fill factor (FF), and efficiency of the designed structure were calculated through simulation. Additionally, we discussed the theoretical justification based on the energy band structure. Results: The energy conversion efficiency of the proposed structure was calculated to be 11.37% when bulk ZnO was utilized in the Schottky junction. However, by creating pores and increasing the effective junction area, a conversion efficiency of 35.5% was achieved. The proposed structure exhibited a short-circuit current, open-circuit voltage, and fill factor (FF) of 37.5 nA, 1.237 V, and 76.5%, respectively. Conclusion: This study explored a betavoltaic device with a porous structure based on a Schottky junction between Pt and ZnO semiconductor. The creation of pores increased the contact surface area and effectively trapped beta beams, resulting in improved performance metrics such as efficiency, short circuit current, and open-circuit voltage. [ABSTRACT FROM AUTHOR]

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High-sensitivity room-temperature multi-dimensional infrared (IR) detection is crucial for military and civilian purposes. Recently, the gapless electronic structures and unique optoelectrical properties have made the two-dimensional (2D) topological semimetals promising candidates for the realization of multifunctional optoelectronic devices. Here, we demonstrated the in-situ construction of high-performance 1T'-MoTe2/Ge Schottky junction device by inserting an ultrathin AlOx passivation layer. The good detection performance with an ultra-broadband detection wavelength range of up to 10.6 micron, an ultrafast response time of ~ 160 ns, and a large specific detectivity of over 109 Jones in mid-infrared (MIR) range surpasses that of most 2D materials-based IR sensors, approaching the performance of commercial IR photodiodes. The on-chip integrated device arrays with 64 functional detectors feature high-resolution imaging capability at room temperature. All these outstanding detection features have enabled the demonstration of position-sensitive detection applications. It demonstrates an exceptional position sensitivity of 14.9 mV/mm, an outstanding nonlinearity of 6.44%, and commendable trajectory tracking and optoelectronic demodulation capabilities. This study not only offers a promising route towards room-temperature MIR optoelectronic applications, but also demonstrates a great potential for application in optical sensing systems. [ABSTRACT FROM AUTHOR]

A device system enabling continual hydrogen production under solar light in a water environment is proposed in this study. This system features a self-powered water splitter with a solar harvester from an aluminium-doped zinc oxide/n-type silicon Schottky junction. Thin-film photovoltaic devices are connected in series to reach the reaction potential necessary for the electrolysis of water. Three types of device systems are studied, and their respective hydrogen generation properties are evaluated. The surface passivation effect from only 0.8 nm ultrathin aluminium oxide was found to effectively protect the device surface by withstanding the corrosion of critical solutions for hydrogen generation. In addition, the surface silicon nanopillars create numerical Schottky junctions that can reduce the reaction potential for the electrolysis of DI water from 1.28 V to 0.74 V and achieve a 115 μLh−1cm−2 hydrogen generation rate. Here, a bias-free and simple structural device system is successfully developed and is advantageous for directly converting solar energy into hydrogen among various water systems. The idea of a sustainable solar-powered hydrogen generation system as well as a future low-carbon footprint design meets the principles of the Paris Agreement. A device system enabling continual hydrogen production under solar light in a water environment is proposed in this study. This system, with devices connected in series, features a self-powered water splitter with a solar harvester from an aluminium-doped zinc oxide (AZO)/n-type silicon Schottky junction. [Display omitted] • The study showcases three device systems aligned with the Paris Agreement. • Sustainable solar-powered hydrogen generation with silicon nanopillar device. • Solar harvester from aluminium-doped zinc oxide/n-type silicon Schottky junction. • Solar energy can be directly converted into hydrogen through a simple series system. • The low-carbon-footprinting design for hydrogen generation met the Paris Agreement. [ABSTRACT FROM AUTHOR]

The photocatalytic nitrogen reduction reaction (NRR) in aqueous solution is a green and sustainable strategy for ammonia production. Nonetheless, the efficiency of the process still has a wide gap compared to that of the Haber–Bosch one due to the difficulty of N2 activation and the quick recombination of photo-generated carriers. Herein, a core-shell Bi@Bi2MoO6 microsphere through constructing Schottky junctions has been explored as a robust photocatalyst toward N2 reduction to NH3. Metal Bi self-reduced onto Bi2MoO6 not only spurs the photo-generated electron and hole separation owing to the Schottky junction at the interface of Bi and Bi2MoO6 but also promotes N2 adsorption and activation at Bi active sites synchronously. As a result, the yield of the photocatalytic N2-to-ammonia conversion reaches up to 173.40 μmol g−1 on core-shell Bi@Bi2MoO6 photocatalysts, as much as two times of that of bare Bi2MoO6. This work provides a new design for the decarbonization of the nitrogen reduction reaction by the utilization of renewable energy sources. [ABSTRACT FROM AUTHOR]

The regulation of carrier generation and transport by Schottky junctions enables effective optoelectronic conversion in optoelectronic devices. A simple and general strategy to spontaneously generate photocurrent is of great significance for self‐powered photodetectors but is still being pursued. Here, we propose that a photocurrent can be induced at zero bias by the transmittance contrast of MXene electrodes in MXene/semiconductor Schottky junctions. Two MXene electrodes with a large transmittance contrast (84%) between the thin and thick zones were deposited on the surface of a semiconductor wafer using a simple and robust solution route. Kelvin probe force microscopy tests indicated that the photocurrent at zero bias could be attributed to asymmetric carrier generation and transport between the two Schottky junctions under illumination. As a demonstration, the MXene/GaN ultraviolet (UV) photodetector exhibits excellent performance superior to its counterpart without transmittance contrast, including high responsivity (81 mA W–1), fast response speed (less than 31 and 29 ms) and ultrahigh on/off ratio (1.33 × 106), and good UV imaging capability. Furthermore, this strategy has proven to be universal for first‐ to third‐generation semiconductors such as Si and GaAs. These results provide a facile and cost‐effective route for high‐performance self‐powered photodetectors and demonstrate the versatile and promising applications of MXene electrodes in optoelectronics. [ABSTRACT FROM AUTHOR]

High electrical conductivity and optical transparency make graphene a suitable candidate for photovoltaic-based power systems. In this study, we present the design and fabrication of an array of graphene-based Schottky junction solar cells. Using mainstream semiconductor manufacturing methods, we produced 96 solar cells from a single 100 mm diameter silicon wafer that was precoated with an oxide layer. The fabrication process involves removing the oxide layer over a select region, depositing metal contacts on both the oxide and bare silicon regions, and transferring large-area graphene onto the exposed silicon to create the photovoltaic interface. A single solar cell can provide up to 160 μA of short-circuit current and up to 0.42 V of open-circuit voltage. A series of solar cells are wired to recharge a 3 V battery intermittently, while the battery continuously powers a device. The solar cells and rechargeable battery together form a power system for any 3-volt low-power application.

Molten salt synthesis of 1T/2H mixed phase MoS 2 for boosting photocatalytic H 2 evolution performance via Schottky junction under EY-sensitized system. [Display omitted] Clean H 2 fuel obtained from the photocatalytic water splitting to hydrogen reaction could efficiently alleviate current energy crisis and the concomitant environmental pollution problems. Therefore, it is desirable to search for a highly efficient photocatalytic system to decrease the energy barrier of water splitting reaction. Herein, the 1T/2H mixed phase MoS 2 sample with Schottky junction between contact interfaces is developed through molten salt synthesis for photocatalytic hydrogen production under a dye-sensitized system (Eosin Y-TEOA-MoS 2) driven by the visible light. In mixed phase MoS 2 sample, the photogenerated electrons of 2H-phase MoS 2 migrated to the 1T-phase MoS 2 are difficult to jump back because of the existence of Schottky barrier, which greatly suppresses the quenching of EY and therefore results in an enhanced hydrogen evolution performance. Therefore, the optimized MoS 2 sample (MoS 2 -350) has an initial hydrogen evolution rate of 213 μmol h−1 and corresponding apparent quantum yield of 36.1 % at 420 nm, far higher than those of pure Eosin Y. It is strongly confirmed by the steady‐state/time-resolved photoluminescence (PL) spectra and transient photocurrent response experiments. With the assistance of Density functional theory (DFT) calculation, the function of Schottky junction in photocatalytic hydrogen evolution reaction is well explained. In addition, a new and universal method (SVM curve) of judging oxidation or reduction quenching for photosensitizers is proposed. [ABSTRACT FROM AUTHOR]

Self-heating of sensing elements on gas sensors is an effective solution to avoid using external heaters. In this paper, a self-heated hydrogen gas sensor is presented. The sensor was created using the DC sputtering method, which involved fabricating it on a thermal-insulating Kapton flexible substrate. This process utilized a thin film of SnO 2 with thick 50 nm that was modified with nanoclusters of Pt, serving as the sensing material. The SnO 2 /Pt material film was analyzed for microstructure and composition by SEM, XRD, and XPS analysis. Infrared images show that the self-heating effect is mainly concentrated in the strip of gas-sensitive material. It showed many good performances, such as high sensitivity (able to detect down to 50 ppm of H 2), good selectivity (poor response to CO, NH 3 , H 2 S, and NO 2), the sensor's performance is little changed by environmental humidity, and low power consumption (89 μW at 5V). The sensor is also stable and low-cost, suitable for portable H 2 detection devices due to its low generated heat and small size. • The SnO 2 /Pt thin film sensor was fabricated on flexible substrate (Kapton). • The sensor showed good performance to H 2 gas (able to detect down to 50 ppm H 2). • The sensor showed good selectivity (poor response to CO, NH 3 , H 2 S, and NO 2). • The self-heated sensors consume ultralow power (89 μW at 5 V). • The fabricated sensor slightly reduced its sensitivity at ambient humidity of above 90% R.H.. [ABSTRACT FROM AUTHOR]

In this study, the FH-MoS2-O heterojunction was prepared by a synergistic strategy of oxygen injection and Schottky junction construction, thereby enhancing electron transfer in the material and generating more photoelectrons. This facilitates the continuous reduction of uranium and the photocatalytic degradation of organic matter in wastewater. In simulated radioactive waste liquid with a concentration of 8 mg/L, the FH-MoS2-O heterojunction achieves an impressive U(VI) removal rate of 91.9%. When the initial concentration of U(VI) is 100 mg/L, the removal capacity reaches 251.76 mg/g. Furthermore, the presence of excess interfering ions and the recycling of the FH-MoS2-O heterojunction have negligible effects on the U(VI) removal rate. Mechanistic studies reveal that oxygen injection not only reduces the band gap but also enhances U(VI) adsorption on the FH-MoS2-O heterojunction. Additionally, it lowers the reduction potential of U(VI) and increases the photocurrent, significantly improving U(VI) reduction efficiency. [ABSTRACT FROM AUTHOR]

Infrared (IR) detection is vital for various military and civilian applications. Recent research has highlighted the potential of two‐dimensional (2D) topological semimetals in IR detection due to their distinctive advantages, including van der Waals (vdW) stacking, gapless electronic structure, and Van Hove singularities in the electronic density of states. However, challenges such as large‐scale patterning, poor photoresponsivity, and high dark current of photodetectors based on 2D topological semimetals significantly impede their wider applications in low‐energy photon sensing. Here, we demonstrate the in situ fabrication of PtSe2/Ge Schottky junction by directly depositing 2D PtSe2 films with a vertical layer structure on a Ge substrate with an ultrathin AlOx layer. Due to high quality junction, the photodetector features a broadband response of up to 4.6 μm, along with a high specific detectivity of ~1012 Jones, and operates with remarkable stability in ambient conditions as well. Moreover, the highly integrated device arrays based on PtSe2/AlOx/Ge Schottky junction showcases excellent Mid‐IR (MIR) imaging capability at room temperature. These findings highlight the promising prospects of 2D topological semimetals for uncooled IR photodetection and imaging applications. [ABSTRACT FROM AUTHOR]

A photodeposition method was employed to distribute NiS nanoparticles evenly on the surface of tubular graphitic carbon nitride (TCN). The Schottky junction which was formed spontaneous between NiS and TCN help accumulate electrons on NiS. This effectively weakens the S H bonds and facilitates the desportion of intermediate hydrogen species during hydrogen evolution reaction, leading to superior hydrogen evolution activity. [Display omitted] As one of the most promising photocatalysts for H 2 evolution, graphitic carbon nitride (CN) has many appealing attributes. However, the activity of pristine CN remains unsatisfactory due to severe charge carrier recombination and lack of active sites. In this study, we report a two-step approach for the synthesis of CN nanotubes (TCN) loaded with NiS nanoparticles. The resulting composite photocatalysts gave a H 2 evolution rate of 752.9 μmol g−1 h−1, which is 42.3 times higher compared to the pristine CN photocatalyst. Experimental and simulation results showed that the Schottky junction which was formed between TCN and NiS was key to achieving high activity. This is because the formation of Schottky junction prevented the backflow of electrons from NiS to TCN, which improved charge separation efficiency. More importantly, it also led to the accumulation of electrons on NiS, which significantly weakened the S H bond, such that the intermediate hydrogen species desorbed more easily from NiS surface to promote H 2 evolution activity. [ABSTRACT FROM AUTHOR]

This paper uses numerical modeling to describe the design and comprehensive analysis of cost-effective MXene/n-InP Schottky barrier solar cells. The proposed design utilizes Ti3C2Tx thin film, a 2D solution-processible MXene material, as a Schottky transparent conductive electrode (TCE). The simulation results suggest that these devices can achieve power conversion efficiencies (PCEs) exceeding 20% in metal–semiconductor (MS) and metal–interlayer–semiconductor (MIS) structures. Combining the proposed structures with low-cost InP growth methods can reduce the gap between InP and other terrestrial market technologies. This is useful for specific applications that require lightweight and radiation-hard solar photovoltaics. [ABSTRACT FROM AUTHOR]