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Cu(InGa)Se2(CIGS) thin films deposited on Mo-coated soda-lime glass substrates by co-evaporation, were implanted with H+(2.5keV, doses from 1014to 1017cm-2) at room temperature. Implanted and non-implanted areas of the films were characterised using photoluminescence (PL) at 10K. The PL spectra from non-implanted areas showed a broad band at 1.13eV (Al) and a long, low energy and low intensity tail with a well-defined band at 0.78eV. Implantation with up to 1015cm-2increased the intensity of band Al. Higher doses resulted in a reduction of the band intensity. Also three high intensity low energy peaks were observed in the PL spectra after implantation. One of the peaks was detected at 0.78eV. A high value of the blue shift for the excitation intensity dependence of band Al before the implantation suggested recombination through conduction and valence band tail states. After implantation the blue shift was found to decrease, it is assumed that the implanted H passivates some of the charged defect states in the band tails.