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This paper is concerned with a theoretical analysis of the behavior of optically excited spin currents in bilayer and multilayer systems of ferromagnetic and normal metals. As the propagation, control and manipulation of the spin currents created in ferromagnets by femtosecond optical pulses is of particular interest, we examine the influence of different thicknesses of the constituent layers for the case of electrons excited several electronvolts above the Fermi level. Using a Monte-Carlo simulation framework for such highly excited electrons, we first examine the spatio-temporal characteristics of the spin current density driven in a Fe layer, where the absorption profile of the light pulses plays an important role. Further, we examine how the combination of light absorption profiles, spin-dependent transmission probabilities, and iron layer thicknesses affect spin current density in a Fe/Au bilayer system. For high-energy electrons studied here, the interface and secondary electron generation have a small influence on spin transport in the bilayer system. However, we find that spin injection from one layer to another is most effective within a certain range of iron layer thicknesses.

Spin transport and spin dynamics after femtosecond laser pulse irradiation of iron (Fe) are studied using a kinetic Monte Carlo model. This model simulates spin dependent dynamics by taking into account two interaction processes during nonequilibrium: Elastic electron - lattice scattering, where only the direction of the excited electrons changes neglecting the energy loss, and inelastic electron - electron interaction, where secondary electrons are generated. An analysis of the particle kinetics inside the material shows that a smaller elastic scattering time affects the spin dynamics by leading to a larger spatial spread of electrons in the material, whereas generation of secondary electrons affects the spin transport with a larger time of propagation of homogeneous spin polarization.

We determine the dynamic magnetization induced in non-magnetic metal wedges composed of silver, copper and platinum by means of Brillouin light scattering (BLS) microscopy. The magnetization is transferred from a ferromagnetic Ni80Fe20 layer to the metal wedge via the spin pumping effect. The spin pumping efficiency can be controlled by adding an insulating but transparent interlayer between the magnetic and non-magnetic layer. By comparing the experimental results to a dynamical macroscopic spin-transport model we determine the transverse relaxation time of the pumped spin current which is much smaller than the longitudinal relaxation time.

We investigate the electron spin relaxation of $n$-type InAs quantum wires by numerically solving the fully microscopic kinetic spin Bloch equations with the relevant scattering explicitly included. We find that the quantum-wire size and the growth direction influence the spin relaxation time by modulating the spin-orbit coupling. Due to inter-subband scattering in connection with the spin-orbit interaction, spin-relaxation in quantum wires can show different characteristics from those in bulk or quantum wells and can be effectively manipulated by various means., Comment: 8 pages, 6 figures

This paper presents a study of electron spin dynamics in bulk GaAs at low temperatures for elevated optical excitation conditions. Our time-resolved Faraday rotation measurements yield sub-nanosecond electron spin dephasing-times over a wide range of n-doping concentrations in quantitative agreement with a microscopic treatment of electron spin dynamics. The calculation shows the occurrence and breakdown of motional narrowing for spin dephasing under elevated excitation conditions. We also find a peak of the spin dephasing time around a doping density for which, under lower excitation conditions, a metal-insulator transition occurs. However, the experimental results for high excitation can be explained without a metal-insulator transition. We therefore attribute the peak in spin-dephasing times to the influence of screening and scattering on the spin-dynamics of the excited electrons., Comment: 7 pages, 3 figures, revised

The femtosecond magnetization dynamics of a thin cobalt film excited with ultrashort laser pulses has been studied using two complementary pump-probe techniques, namely spin-, energy- and time-resolved photoemission and time-resolved magneto-optical Kerr effect. Combining the two methods it is possible to identify the microscopic electron spin-flip mechanisms responsible for the ultrafast macroscopic magnetization dynamics of the cobalt film. In particular, we show that electron-magnon excitation does not affect the overall magnetization even though it is an efficient spin-flip channel on the sub-200 fs timescale. Instead we find experimental evidence for the relevance of Elliott-Yafet type spin-flip processes for the ultrafast demagnetization taking place on a time scale of 300 fs., Comment: 12 pages, 3 figures; accepted by Physical Review Letters

Electron-spin relaxation at different surfaces of p-doped GaAs is investigated by means of spin, time and energy resolved 2-photon photoemission. These results are contrasted with bulk results obtained by time-resolved Faraday rotation measurements as well as calculations of the Bir-Aronov-Pikus spin-flip mechanism. Due to the reduced hole density in the band bending region at the (100) surface the spin-relaxation time increases over two orders of magnitude towards lower energies. At the flat-band (011) surface a constant spin relaxation time in agreement with our measurements and calculations for bulk GaAs is obtained., Comment: 6 pages, 4 figures

The mechanisms for spin relaxation in semiconductors are reviewed, and the mechanism prevalent in p-doped semiconductors, namely spin relaxation due to the electron-hole exchange interaction, is presented in some depth. It is shown that the solution of Boltzmann-type kinetic equations allows one to obtain quantitative results for spin relaxation in semiconductors that go beyond the original Bir-Aronov-Pikus relaxation-rate approximation. Experimental results using surface sensitive two-photon photoemission techniques show that the spin relaxation-time of electrons in p-doped GaAs at a semiconductor/metal surface is several times longer than the corresponding bulk spin relaxation-times. A theoretical explanation of these results in terms of the reduced density of holes in the band-bending region at the surface is presented., Comment: 33 pages, 12 figures; earlier submission replaced by corrected and expanded version; eps figures now included in the text

A quantum kinetic theory is used to compute excitation induced dephasing in semiconductor quantum dots due to the Coulomb interaction with a continuum of states, such as a quantum well or a wetting layer. It is shown that a frequency dependent broadening together with nonlinear resonance shifts are needed for a microscopic explanation of the excitation induced dephasing in such a system, and that excitation induced dephasing for a quantum-dot excitonic resonance is different from quantum-well and bulk excitons., Comment: 6 pages, 4 figures. Extensively revised text, two figures changed