1. Tailoring the electronic transitions of NdNiO_3 films through (111)_pc oriented interfaces
- Author
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Catalano, S., Gibert, M., Bisogni, V., He, F., Sutarto, R., Viret, M., Zubko, P., Scherwitzl, R., Sawatzky, G. A., Schmitt, T., and Triscone, J. -M.
- Subjects
Condensed Matter - Strongly Correlated Electrons - Abstract
Bulk NdNiO_3 and thin films grown along the pseudocubic (001)_pc axis display a 1st order metal to insulator transition (MIT) together with a N\'eel transition at T=200K. Here, we show that for NdNiO3 films deposited on (111)_pc NdGaO_3 the MIT occurs at T=335K and the N\'eel transition at T=230 K. By comparing transport and magnetic properties of layers grown on substrates with different symmetries and lattice parameters, we demonstrate a particularly large tuning when the epitaxy is realized on (111)_pc surfaces. We attribute this effect to the specific lattice matching conditions imposed along this direction when using orthorhombic substrates.
- Published
- 2015
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