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1. UV Detectors Based on In₂O₃–Ga₂O₃ Composite Films

2. Impact of Regional Climate Change on the Infrastructure and Operability of Railway Transport

6. Electrical properties of α-Ga2O3 films grown by halide vapor phase epitaxy on sapphire with α-Cr2O3 buffers.

8. Properties of κ‐Ga2O3 Prepared by Epitaxial Lateral Overgrowth

11. New RF gun for Novosibirsk ERL FEL

12. Novosibirsk Free Electron Laser as a User Facility

13. Electrical properties and deep trap spectra in Ga2O3 films grown by halide vapor phase epitaxy on p-type diamond substrates.

14. Effects of sapphire substrate orientation on Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy using α-Cr2O3 buffers

15. Solar-Blind Ultraviolet Detectors Based on High-Quality HVPE α-Ga2O3 Films With Giant Responsivity

16. Electrical properties of α-Ga2O3 films grown by halide vapor phase epitaxy on sapphire with α-Cr2O3 buffers

17. Electrical and Recombination Properties of Polar Orthorhombic κ-Ga 2 O 3 Films Prepared by Halide Vapor Phase Epitaxy.

20. Bench Test Results of CW 100 mA Electron RF Gun for Novosibirsk ERL based FEL

24. Polymorphism and Faceting in Ga2O3 Layers Grown by HVPE at Various Gallium‐to‐Oxygen Ratios.

25. Gas Sensors Based on Pseudohexagonal Phase of Gallium Oxide.

26. Test Stand Results of CW 100 mA Electron RF Gun for Novosibirsk ERL FEL

27. Latest Results of CW 100 mA Electron RF Gun for Novosibirsk ERL Based FEL

28. Novosibirsk ERL Facility

29. Halide Vapor Phase Epitaxy of In2O3 and (In1−xGax)2O3 on Sapphire Substrates and GaN/Al2O3 Templates.

30. Novosibirsk Free Electron Laser: Terahertz and Infrared Coherent Radiation Source

31. Novosibirsk Four-Orbit ERL With Three FELs

32. 300 kV High-Voltage Source With Up to 15 kW Output Power

33. CW 100 mA Electron RF Gun for Novosibirsk ERL FEL

34. Halide Vapor Phase Epitaxy α‐ and ε‐Ga2O3 Epitaxial Films Grown on Patterned Sapphire Substrates.

35. First Lasing of the Third Stage of Novosibirsk FEL

41. Halide Vapor Phase Epitaxy of In2O3and (In1−xGax)2O3on Sapphire Substrates and GaN/Al2O3Templates

42. Halide Vapor Phase Epitaxy α‐ and ε‐Ga2O3Epitaxial Films Grown on Patterned Sapphire Substrates

43. Novosibirsk Free electron LASer Facility: Two-orbit ERL with two FELS

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